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1. 发明专利

JP2003309182A Method of manufacturing semiconductor device and semiconductor device 审中-公开
标题翻译：制造半导体器件和半导体器件的方法
公开(公告)号：JP2003309182A
公开(公告)日：2003-10-31
申请号：JP2002114967
申请日：2002-04-17
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： OKAZAKI TSUTOMU , OKADA DAISUKE , IKEDA YOSHIHIRO , TSUKAMOTO KEISUKE , FUKUMURA TATSUYA , YADORI SHOJI , HARAGUCHI KEIICHI , KISHI KOJI
IPC分类号： H01L21/8247 , H01L21/20 , H01L21/334 , H01L21/82 , H01L21/822 , H01L21/8234 , H01L21/8239 , H01L21/8242 , H01L27/04 , H01L27/06 , H01L27/088 , H01L27/10 , H01L27/105 , H01L27/115 , H01L29/78 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11536 , H01L27/105 , H01L27/115 , H01L27/11526 , H01L29/66181 , H01L29/7833
摘要： PROBLEM TO BE SOLVED: To provide a technique by which the capacity of a capacitor per unit area can be improved and a manufacturing process associated with the improvement can be simplified.
SOLUTION: The capacity of the capacitor per unit area is improved by increasing the surface area of the capacitor by forming at least one or more uneven capacitor forming grooves 4a on the surface of a capacitor forming area. In addition, the manufacturing process of the capacitor can be simplified by forming the grooves 4a and element separating grooves 4 formed on the surface of a semiconductor substrate 1 in the same step. Moreover, a dielectric film 16a of the capacitor formed in the capacitor forming area and a gate insulating film 16 for high withstand voltage formed in an MISFET forming area are formed in the same step. Alternatively, the dielectric film 16a of the capacitor formed in the capacitor forming area and a memory/gate interlayer film 11 formed between polycrystalline silicon layers 10a and 17 in a memory cell forming area are formed in the same step.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种可以提高每单位面积的电容器的容量并且可以简化与改进相关的制造工艺的技术。解决方案：通过在电容器形成区域的表面上形成至少一个或多个不均匀的电容器形成槽4a来增加电容器的表面积来提高每单位面积电容器的容量。此外，通过在同一步骤中形成形成在半导体衬底1的表面上的沟槽4a和元件分离槽4，可以简化电容器的制造工艺。此外，在同一步骤中形成在电容器形成区域中形成的电容器的电介质膜16a和形成在MISFET形成区域中的高耐压栅极绝缘膜16。或者，形成在电容器形成区域中的电容器的电介质膜16a和形成在存储单元形成区域中的多晶硅层10a和17之间的存储/栅极层间膜11形成在同一步骤中。版权所有（C）2004，JPO

2. 发明专利

JPH08274114A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH08274114A
公开(公告)日：1996-10-18
申请号：JP7858395
申请日：1995-04-04
申请人： HITACHI LTD
发明人： HIRUMA TAKEYUKI , WATANABE AKISADA , YAZAWA MASAMITSU , HARAGUCHI KEIICHI
IPC分类号： H01L29/73 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/331 , H01L29/205 , H01L29/737
摘要： PURPOSE: To reduce the electrostatic capacitance between a base layer and a collector layer and to accurately control the thickness of the base layer by forming an insulation film between the base layer close to a base electrode and the collector layer, and further growing the crystal growth layer of a base layer inside the hollow part and on both sides of the insulation film with the hollow part. CONSTITUTION: A collector layer 22 and nondoped GaAs film 23 are subjected to epitaxial growth in this order on a substrate 21, and an insulation film 24 such as SiO2 is formed thereon, and a center part is opened by a photolithography method. Then, a metal film 25 such as Al is deposited on it, and the insulation film is uniformly vapour-deposited on it and an insulation film pattern 27 is formed by the photolithography method. Further, the metal film 25 is eliminated by etching and a space 28 is formed and then a base layer 29 is subjected to crystal growth by the MOCVD method, thus accurately controlling the thickness of the base layer 29 determined by the thickness of the metal film 25, and decreasing the area of the P-N junction between the base layer and the collector layer and the electrostatic capacitance.

3. 发明专利

JPH0823086A SEMICONDUCTOR DEVICE AND PRODUCTION PROCESS THEREOF 失效
公开(公告)号：JPH0823086A
公开(公告)日：1996-01-23
申请号：JP15444194
申请日：1994-07-06
申请人： HITACHI LTD
发明人： HIRUMA TAKEYUKI , YAZAWA MASAMITSU , KATSUYAMA TOSHIO , SATO TOSHIHIKO , SHIRAI MASATAKA , HARAGUCHI KEIICHI
IPC分类号： H01L29/06 , H01L29/66 , H01L29/80
摘要： PURPOSE:To attain a high speed modulation and switching of an electric or optical signal by utilizing the phenomenon that electrons or light propagating in a thin semiconductor wire transfers one thin semiconductor wire to another. CONSTITUTION:Waveguides 118 and 119 are composed of two needle-like crystals solid crossing on a base board. For the waveguides made of GaAs, a buried layer 112 uses AlGaAs. Then electron input/output electrodes 113-116 and a control electrode 117 for switching flows of electrons are formed. Electrons entering the waveguide 118 from the electrode 113 partly transfer to the other waveguide 119 at a midway cross part during propagating on that waveguide. On the electrodes 115 and 116 an output of electrons is observed at a certain ratio. The ratio of electrons on these electrodes can be changed by a voltage applied to the electrode 117. Thus, high speed switching of electric or optical signals can be made.

4. 发明专利

JPH06275813A QUANTUM WIRE WAVEGUIDE 失效
公开(公告)号：JPH06275813A
公开(公告)日：1994-09-30
申请号：JP6160693
申请日：1993-03-22
申请人： HITACHI LTD
发明人： HARAGUCHI KEIICHI , YAZAWA MASAMITSU , KA KIRIN
IPC分类号： H01L29/06 , H01L29/66
摘要： PURPOSE:To provide a waveguide electron waves which can be excelletly controlled without any influence of fluctuation of the boundaries and surfaces of crystals even when a quantum wire which is relatively larger than the conventional one is used. CONSTITUTION:The figure is a perspective view of a cylindrical quantum wire. The central part of the wire is constituted of a material having an electron affinity stronger than that of the semiconductor material constituting the outer part of the central part. The semiconductor material is doped with impurities so that the outer part can also work as a carrier supplying layer. The wave function 2 of the electron in the radial direction (kr) forms a standing wave by being confined by the side faces of a waveguide 1 for electron wave the waveguide. The wave function 3 in the side face direction (kphi) of the waveguide satisfies a periodic boundary condition, because the side faces of the waveguide form the side faces of an annulus, and also forms a standing wave. In the above-mentioned two directions, the wave number vector component of the electron becomes zero and a one-directional electron gas state in which electron wave propagates only in the axial direction of the cylinder is set. Therefore, a waveguide for electron wave can be realized even when the quantum has a relatively large size.

5. 发明专利

JPH04152575A MEMORY ELEMENT ULTRAHIGH IN DENSITY 失效
公开(公告)号：JPH04152575A
公开(公告)日：1992-05-26
申请号：JP27629190
申请日：1990-10-17
申请人： HITACHI LTD
发明人： HARAGUCHI KEIICHI , KATSUYAMA TOSHIO
IPC分类号： H01L21/205 , H01L21/339 , H01L29/06 , H01L29/762 , H01L29/80
摘要： PURPOSE:To reduce the size of a memory and enable superhigh density by forming a cyclic potential well in the longitudinal direction of a semiconductor quantum fine line whose diameter is above a specified value, and storing electrons in the well within the range of one or several pieces. CONSTITUTION:Since the GaAs needle-shaped crystal is approximately 6mum, the Al0.1 Ga0.9As layer 3 is approximately 500Angstrom in well width, and the GaAs layer 4 is approximately 100Angstrom in well width, approximately one hundred electrodes can be attached. And electrodes 8 approximately 100Angstrom in diameter are attached to both ends of the needle-shaped crystal so that an electric field can be applied in the longitudinal direction of the quantum well fine line being the semiconductor 100Angstrom or less in diameter. Using the element being made this way as a memory element, the potential well with electrons, to 1, and the well without electrons, to 0, are made to correspond, and those are stored. The electrons are stored in the GaAs layer 4, and if one makes the insulating layer thin in advance, it is possible for the electrons to passes through it by the tunnel effect and reach the electrode 1 and to be sent to an electrode 2 and also sent in form the electrode 2. Furthermore, the electrode 8 can shift the electrons one by one from one quantum well to another quantum well by applying electric fields to both sides of the quantum fine line by a lead wire 5.

6. 发明专利

JPH0697425A QUANTUM WIRE SUPERLATTICE STRUCTURE AND ITS MANUFACTURE 失效
公开(公告)号：JPH0697425A
公开(公告)日：1994-04-08
申请号：JP24449692
申请日：1992-09-14
申请人： HITACHI LTD
发明人： HARAGUCHI KEIICHI , KATSUYAMA TOSHIO , HIRUMA TAKEYUKI , YAZAWA MASAMITSU , TAKAGUCHI MASANARI , KAKIBAYASHI HIROSHI
IPC分类号： H01L29/06 , H01L21/338 , H01L29/15 , H01L29/68 , H01L29/778 , H01L29/812 , H01S5/00 , H01S5/042 , H01S3/18
摘要： PURPOSE:To materialize a structure which has removed the fluctuation of the surface and the interface of a quantum wire or one-dimensional superlattice structure, by using needle-shaped crystals grown on a semiconductor substrate. CONSTITUTION:Though GaAs needle-shaped crystals 1 are formed by low pressure organic metal vapor growth method, by sputtering the arsenic face of a GaAs substrate 4 with the plasma of a reactive ion etching device, trimethyl gallium, for a group III material, and arsine, for a group V material, are used. And, in case of doping it with n, disilane is used at the same time, fine needle- shaped crystals 1 of GaAs grow under the condition that the temperature of a board is 500 deg.C, that the time of supply of material gas is 300sec, and that V/III ratio is 100, and the length is equal at approximately 2mum, and the diameter is approximately 100Angstrom . Accordingly, if it grows at a substrate temperature of 460 deg.C, it will be roughly of zinc blend structure, and if it grows at 550 deg.C, it will be of wurtzite structure, and the distribution of crystal structure can be controlled freely, so the one-dimensional quantum wire superlattice structure can be materialized easily.

7. 发明专利

JPH1126608A NONVOLATILE SEMICONDUCTOR MEMORY 失效
公开(公告)号：JPH1126608A
公开(公告)日：1999-01-29
申请号：JP17352697
申请日：1997-06-30
申请人： HITACHI LTD
发明人： HARAGUCHI KEIICHI , HISAMOTO MASARU
IPC分类号： H01L21/8247 , H01L21/8246 , H01L27/105 , H01L27/115 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory which has an increased capacity at the diffusion layer and suppresses the short channel effect. SOLUTION: A device comprises floating gate electrodes 5 on a p-type Si substrate 1 through a gate insulation film 2, control gate electrodes formed through a layer insulation film 20, n diffusion layer 3 which has a large area overlapped with the floating gate electrodes and extend just beneath, and p diffusion layer 4 disposed outside channel regions. The write and erase use the Fowler-Nodheim current, the same as in the usual AND type flash memory. As the read operation uses the inter-band tunnel current independent of the gate length, no short channel effect occurs and low power operation is possible. The n diffusion layer may be omitted to allow a high integration.

8. 发明专利

JPH08161371A NUMERICAL SIMULATION DEVICE AND ACTIVELY INTELLIGENT INTERACTIVE CAD SYSTEM USING THE SAME 失效
公开(公告)号：JPH08161371A
公开(公告)日：1996-06-21
申请号：JP29957794
申请日：1994-12-02
申请人： HITACHI LTD
发明人： KA KIRIN , MORIYOSHI MEGUMI , HARAGUCHI KEIICHI , OTSUKA HIROYUKI , UTSUNOMIYA NAOKI
IPC分类号： G06F17/50 , G06F17/00 , G06F19/00
摘要： PURPOSE: To enable design supporting with high reliability by efficiently supporting design which satisfies a performance value a designer expects. CONSTITUTION: A system is at least provided with a setting input part 4 which inputs a non-object model parameter and an object model variable which are respectively selected from the respective model parameters and the respective model variables in numerical experiment modeling and whose values are set and an object model parameter value calculating part 5 which obtains the value of the respective model variables (non-object model variable) excluding the object model variable from a nonlinear simultaneous equations for numerical experiment modeling and obtains the value of the respective model parameters (object model parameter) excluding the non-object model parameter with the non-object model variable value and the objectmodel variable value as the inconsistant resolusion of the nonlinear simultaneous equations.

9. 发明专利

JPH07156082A MANIPULATOR AND OPERATING METHOD THEREOF 失效
公开(公告)号：JPH07156082A
公开(公告)日：1995-06-20
申请号：JP29935693
申请日：1993-11-30
申请人： HITACHI LTD
发明人： HIRUMA TAKEYUKI , YAZAWA MASAMITSU , HARAGUCHI KEIICHI , KATSUYAMA TOSHIO , WATANABE AKISADA , SATO TOSHIHIKO , SHIMADA JUICHI
IPC分类号： B25J7/00 , B25J15/08 , B25J19/00 , B81B3/00
摘要： PURPOSE:To provide a manipulator for moving and operating material in the specific numerical value in a spatial manner. CONSTITUTION:This manipulator, consisting of at least two pieces of elastically deformable find-line crystals 2 and 3 set up on a base plate 1 at a desirable space, is able to set up a metal in a part of each surface of these fine-line crystals 2 and 3. An operation of this manipulator is carried out after elastically deforming these fine-line crystals by dint of light energy and electrical force.

10. 发明专利

JPH06252490A OPTICAL SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPH06252490A
公开(公告)日：1994-09-09
申请号：JP3301793
申请日：1993-02-23
申请人： HITACHI LTD
发明人： SATO TOSHIHIKO , YAZAWA MASAMITSU , HARAGUCHI KEIICHI , USAGAWA TOSHIYUKI , HIRUMA TAKEYUKI , KATSUYAMA TOSHIO
IPC分类号： G02F1/37 , H01L21/20 , H01S3/109 , H01S5/00 , H01S5/026 , H01S3/18
摘要： PURPOSE:To obtain a wavelength conversion element having a high wavelength conversion efficiency, by providing an optically transparent region in the wavelength conversion element with respect to the shorter light wavelength than the one corresponding to the band gap of a semiconductor material in a bulk state. CONSTITUTION:In order that the second higher harmonic of a light is absorbed in a quantum box region 100 of a semiconductor material, it is required that the level in the conduction band of the material whereto electron in the valence band of the material is subjected to a transition by its resonant excitation is in an inoccupied state. In the conduction band laid in the quantum box, no electron level other than discrete levels 50, 51 exists, and therefore, such a transition as a transition 62 is not generated. Also, since the level 50 is occupied by electron in the conduction band, no transition to the level 50 is generated. Further, the level 51 has the height whereto no transition of electron can get even though electron in the conduction band is excited. Therefore, there is no level which resonates to the light having energy hnu in the quantum box 100. Further, no second higher harmonic is absorbed in a barrier region 101 since its band gap is larger than the energy hnu of the second higher harmonic.

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