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1. 发明专利

JPH0897163A SEMICONDUCTOR WAFER, MANUFACTURE THEREOF, SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH0897163A
公开(公告)日：1996-04-12
申请号：JP26552994
申请日：1994-10-28
申请人： HITACHI LTD
发明人： KAWAGOE HIROHITO , SHIRASU TATSUMI , KIYOTA SHOGO , SUZUKI NORIO , YAMADA EIICHI , SUGINO YUSHI , KITANO MANABU , SAKURAI YOSHIHIKO , NAGANUMA TAKASHI , ARAKAWA HISASHI
IPC分类号： H01L29/78 , H01L21/205 , H01L21/8238 , H01L27/092
摘要： PURPOSE: To improve the performance and reliability of semiconductor integrated circuit devices and reduce their cost. CONSTITUTION: On the major surface of a semiconductor substrate body 2S containing impurities of a specified conductivity type, an epitaxial layer 2E is formed which contains impurities that have the same conductivity type that the substrate's impurities do and have the same concentration as the design concentration of the substrate's impurities. Thereafter, the gate insulating films 4Nc, 4Pc of MOS FETs 4N, 4P are formed on the epitaxial layer 2E.

2. 发明专利

JPS5731175A Semiconductor element 失效
标题翻译：半导体元件
公开(公告)号：JPS5731175A
公开(公告)日：1982-02-19
申请号：JP7666281
申请日：1981-05-22
申请人： Hitachi Ltd
发明人： NISHIDA SUMIO , YAMADA EIICHI , AOYAMA KOUZOU , YAMAGUCHI TSUNEYUKI
IPC分类号： H01L29/40 , H01L21/331 , H01L29/72 , H01L29/73
CPC分类号： H01L29/72
摘要： PURPOSE:To prevent discharge from occurring between an element electrode and a guard ring electrode, by surrounding the electrode part with an insulator having a higher dielectric breakdown strength than that of air. CONSTITUTION:A P base region 2 is formed on an N type Si substrate 1. An N emitter region is formed on the region 2. An Si oxide film 4 is formed on the substrate 1 during these processes. Next, a part of the oxide film 4 is removed from both base and emitter regions and the element peripheral part, and an emitter electrode, a base electrode 5 and a guard ring 7 are formed. Thereafter, the whole surface is coated with a PSG film except for bonding parts of the base and emitter electrodes. Finally, the whole is sealed with a resin material. This permits no dielectric breakdown between the electrode 5 and the gurad ring 7, even if a reverse- biased voltage enough to cause dielectric breakdown of air is applied between the base and the collector.
摘要翻译：目的：为了防止在元件电极和保护环电极之间发生放电，通过用具有比空气更高的介电击穿强度的绝缘体围住电极部分。构成：在N型Si衬底1上形成P基极区2.在区域2上形成N个发射极区。在这些处理中，在衬底1上形成Si氧化物膜4。接下来，从基极和发射极区域以及元件周边部分去除氧化膜4的一部分，并且形成发射电极，基极5和保护环7。此后，整个表面涂覆有除基底和发射电极的部分之外的PSG膜。最后，整体用树脂材料密封。即使在基极和集电极之间施加足以引起绝缘击穿空气的反向偏置电压，也不会在电极5和光栅环7之间产生电介质击穿。

3. 发明专利

JPS5258491A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5258491A
公开(公告)日：1977-05-13
申请号：JP13409575
申请日：1975-11-10
申请人： HITACHI LTD
发明人： SUZUKI AKIRA , YAMADA EIICHI , ITOU TATSU
IPC分类号： H01L21/3205 , H01L21/28 , H01L23/52 , H01L27/04 , H01L29/43 , H01L29/78
摘要： PURPOSE:To permit the appearance inspection of the electrode wiring of first layer even after the electrode wiring layer of second layer has been formed, by incorporating transparent or transluscent layers in at least two or more layers in composing multilayer conductive layers on a semiconductor substrate formed with element regions.

4. 发明专利

JPS5243367A RESIN SEAL TYPE SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5243367A
公开(公告)日：1977-04-05
申请号：JP11770875
申请日：1975-10-01
申请人： HITACHI LTD
发明人： SAKIMOTO MASAKAZU , OHISA TOSHIHIKO , YAMADA EIICHI
IPC分类号： H01L23/29 , H01L23/06 , H01L23/31
摘要： PURPOSE:An element region is covered thereon with a PIQ resin being stable to heat, and is further coated thereon with an Si base coating material extending to a semiconductor substrate, whereby occurence of leak current is prevented.

5. 发明专利

JPH0745526A MANUFACTURE OF HIGH WITHSTAND VOLTAGE SEMICONDUCTOR WAFER 失效
公开(公告)号：JPH0745526A
公开(公告)日：1995-02-14
申请号：JP18947493
申请日：1993-07-30
申请人： HITACHI LTD
发明人： NAGANUMA TAKASHI , SUGINO YUSHI , YAMADA EIICHI , KITANO MANABU
IPC分类号： H01L21/205
摘要： PURPOSE:To form a complete crystal surface layer part on the surface of a semiconductor wafer, and reduce deterioration of withstand voltage, by planishing the surface of a semiconductor wafer to form a mirror wafer, and growing crystal of the same material as the semiconductor wafer on the surface or implanting elements of the same material. CONSTITUTION:A semiconductor wafer is cut out from a columnar silicon ingot. If necessary, the surface is cleaned by beveling and etching, and then the wafer surface is planished. After mirror finish is completed, an Si epitaxial layer E which is the same material as the semiconductor wafer W is formed on the surface of the semiconductor wafer W. By forming the epitaxial layer E on the surface of the semiconductor wafer W in this manner, a complete crystal surface layer part F of high completeness is formed on the surface of the semiconductor wafer W.

6. 发明专利

JPH0480911A SEMICONDUCTOR MANUFACTURING METHOD 失效
公开(公告)号：JPH0480911A
公开(公告)日：1992-03-13
申请号：JP19542390
申请日：1990-07-24
申请人： HITACHI LTD
发明人： TSUKAHARA MASARU , NAKABAYASHI SHINICHI , MURAMATSU TAKASHI , ICHIKAWA HAN , YAMADA EIICHI
IPC分类号： H01L21/02
摘要： PURPOSE:To reduce as much as possible the adhesion of foreign substances on wafers due to static electricity by a method wherein the semiconductor wafers, constituting each batch and having approximate resistivity with one another, are housed in a case. CONSTITUTION:The more the irregularity of resistivity value between wafer becomes smaller, the more the number of adhered foreign substances decrease. The reason is that if the irregularity of resistivity value between the wafers is large, the potential difference formed between the wafers increases. Accordingly, when a plurality of semiconductor wafers 1 are housed in a cartridge 2 for conveyance and various treatments, the semiconductor wafers 1, having the approximate resistivity are housed in one cartridge 2 so that the irregularity of resistivity value of each semiconductor wafer 1 is brought close to zero, desirably 1.0OMEGAcm or smaller. Consequently, as the electrification of static electricity between the semiconductor wafers 1 in the cartridge 2 is suppressed, the adhesion of foreign substance to the semiconductor wafers l can be reduced.

7. 发明专利

JPS5227273A RESIN SEAL TYPE SEMICONDUCTOR UNIT 失效
公开(公告)号：JPS5227273A
公开(公告)日：1977-03-01
申请号：JP10219875
申请日：1975-08-25
申请人： HITACHI LTD
发明人： KOHISA TOSHIHIKO , YAMADA EIICHI
IPC分类号： H01L23/28 , H01L21/60 , H01L23/48
摘要： PURPOSE:To provide a moisture-free resin seal type semiconductor unit by eliminating gaps between the semiconductor and resin mold.

8. 发明专利

JPS6034256B2 失效
公开(公告)号：JPS6034256B2
公开(公告)日：1985-08-07
申请号：JP8370284
申请日：1984-04-27
申请人： HITACHI LTD
发明人： SAKIMOTO MASAKAZU , OGU TOSHIHIKO , YAMADA EIICHI
IPC分类号： H01L21/312 , H01L21/56 , H01L23/28

9. 发明专利

JPS59210645A Manufacture of resin sealed semiconductor device 失效
标题翻译：树脂密封半导体器件的制造
公开(公告)号：JPS59210645A
公开(公告)日：1984-11-29
申请号：JP8370284
申请日：1984-04-27
申请人： Hitachi Ltd
发明人： SAKIMOTO MASAKAZU , OGU TOSHIHIKO , YAMADA EIICHI
IPC分类号： H01L21/312 , H01L21/56 , H01L23/28
CPC分类号： H01L21/56 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/8592 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PURPOSE:To obtain a resin sealed semiconductor device having thermal stability and moreover having high humidity resistance also by a method wherein bonding wires are connected to bonding pad parts on a semiconductor substrate formed with element regions, polyimide isoindolequinazolinedione resin is applied to the whole surface containing them, and the whole of the exposing surface of the substrate containing the resin thereof is surrounded with Si ruber, etc. CONSTITUTION:A semiconductor substrate 24 provided with element regions 21, 22, 23, and moreover formed with bonding pads 33 on the edge parts of the surface is fixed on a tab lead 28, and the pads 33 and leads 29 for leading out outside of the leads 28 are connected using fine wires 31. Then polyimide isoindolequinazolinedione (PIQ) resin 27 is applied on the whole surface containing the pads 33 and the element regions 21-23, the exposing surface of the substrate 24 containing the resin thereof is covered with resin 20 consisting of Si rubber, Si varnish, etc., and the whole is molded using epoxy resin 32. Accordingly, the thermal characteristic is stabilized according to the PIQ resin 27, and permeation of water is obstructed according to the Si rubber resin 20.
摘要翻译：目的：为了获得具有热稳定性并且还具有高耐湿性的树脂密封半导体器件，还可以通过其中将接合线连接到形成有元件区域的半导体衬底上的接合焊盘部分的方法，将聚酰亚胺异吲哚基喹唑啉二酮树脂施加到包含它们，并且包含其树脂的基材的整个曝光表面被Si ruber等包围。构成：设置有元件区域21,22,23的半导体基板24，并且还在边缘上形成有焊盘33 表面的一部分固定在突片引线28上，用引线28引出的焊盘33和引线29用细线31连接。然后将聚酰亚胺异吲哚基喹啉二酮（PIQ）树脂27施加在包含衬垫33和元件区域21-23，包含树脂的衬底24的暴露表面被树脂20覆盖的Si橡胶，Si清漆等，并且整体使用环氧树脂32成型。因此，根据PIQ树脂27，热特性稳定，并且根据Si橡胶树脂20阻碍水的渗透。

10. 发明专利

JPS52124866A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS52124866A
公开(公告)日：1977-10-20
申请号：JP4127576
申请日：1976-04-14
申请人： HITACHI LTD
发明人： YAMADA EIICHI , SUZUKI AKIRA
IPC分类号： H01L23/52 , H01L21/28 , H01L21/31 , H01L21/3205 , H01L29/43
摘要： PURPOSE:To prefectly prevent the corrosion of a Ni-Cr film by completely covering the Ni-Cr alloy formed for the purpose of connecting to an Al wiring film with an Au film.

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