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1. 发明专利

JP2001041931A LASER MASS SPECTROMETER 失效
公开(公告)号：JP2001041931A
公开(公告)日：2001-02-16
申请号：JP21315999
申请日：1999-07-28
申请人： HITACHI LTD
发明人： YAMAGUCHI HIROKATSU , IBE HIDEFUMI , EGUCHI KINYA , SUGIMOTO ARITOSHI , SAKIMOTO MASAKAZU
IPC分类号： H01J49/10 , G01N27/62 , G01N27/64 , H01J49/40
摘要： PROBLEM TO BE SOLVED: To correctly cut a film down to the foreign matter on a semiconductor sample up to the position of the foreign matter and remove the film on the surface of the sample, when the foreign matter in the film or at the interface of the film is to be analyzed by observing a laser spot on the sample, every time the sample surface is cut by making a laser irradiation. SOLUTION: After a semiconductor wafer sample 4 is placed on a stage, the stage is moved to move the position of foreign matter below an objective lens 17. The focal point of a laser light is focused for correction by moving a collective lens 19. A carved depth Δz of the surface of the sample is obtained from a movement distance M.Δz of the collective lens 19, every time a pulse laser light is irradiated once. The cut depth per pulse can be adjusted, by adjusting the attenuation rate of an attenuation filter 13. The intensity of the laser light is set to be minimum at first, and then increased stepwise by each pulse. The intensity of the laser light is fixed, when the cut depth per pulse becomes approximately 1/10 the depth from a sample surface to the foreign matter.

2. 发明专利

JPH11190695A SEMICONDUCTOR STRESS MEASURING RAMAN SPECTROPHOTOMETER 失效
公开(公告)号：JPH11190695A
公开(公告)日：1999-07-13
申请号：JP36091397
申请日：1997-12-26
申请人： HITACHI LTD
发明人： YAMAGUCHI HIROKATSU , EGUCHI KINYA , SAKIMOTO MASAKAZU , TAKASHIMA MUNEHIKO
IPC分类号： G01J3/44 , G01N21/65 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To measure stress rapidly with high sensitivity in a Raman microspectrophotometer. SOLUTION: In a low dispersion spectroscope 13, focal length is 60 cm, the ruling number of an echelette diffraction grating 30 is 3600/mm, and primary diffracted light is used. In a high dispersion spectroscope 14, the focal length of a concave reflecting mirror is 60 cm, the ruling number of an echelle diffraction grating 35 is 75/mm, and 48-order diffracted light is used. In the case of detecting Raman spectrum of silicon excited by argon laser 514.5 nm, the low dispersion spectroscope 13 provided with the echelette diffraction grating 30 is adjusted in such a way that light from 515 nm to 535 nm is dispersed on an intermediate slit 32, and the width of the intermediate slit 32 is adjusted to correspond to this wavelength width to measure stress.

3. 发明专利

JPS6480054A RESIN SEALED SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6480054A
公开(公告)日：1989-03-24
申请号：JP23590487
申请日：1987-09-19
申请人： HITACHI LTD
发明人： YASUHARA TOSHIHIRO , MASUDA MASACHIKA , MURAKAMI HAJIME , NISHI KUNIHIKO , SAKIMOTO MASAKAZU
IPC分类号： H01L23/28 , H01L23/50
摘要： PURPOSE:To allow a large-sized chip to be equipped so that it does not draw inner leads round at end parts of longer sides of a tab, by arranging a plurality of inner and outer leads along the longer sides of its rectangular tab part. CONSTITUTION:A 4M bit DRAM semiconductor chip 20 is equipped on the surface of a tab part 11 through adhesives. A plurality of inner and outer leads 12 and 13 are arranged along longer sides of the tab part 11. Then, unlike conventional manners, it is unnecessary for this chip to draw a plurality of inner leads round from each longer side to shorter side at end parts of the longer sides. As this approach may leave some surplus of the size in the longer side direction, even the large-sized semiconductor chip 20 can be formed at the resin sealed type semiconductor device having a prescribed size.

4. 发明专利

JPH10199475A MASS SPECTROMETRY, ITS DEVICE, AND MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH10199475A
公开(公告)日：1998-07-31
申请号：JP506097
申请日：1997-01-14
申请人： HITACHI LTD
发明人： YAMAGUCHI HIROKATSU , EGUCHI KINYA , SUGIMOTO ARITOSHI , MIZUNO FUMIO , SAKIMOTO MASAKAZU , OSHIDA YOSHITADA , AKAMATSU NAOTOSHI
IPC分类号： G01N27/62 , G01N27/64 , H01J49/40 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To make quantitative spectrum analysis possible independent of the dispersion of emitted intensity of pulse laser beams and difference in surface state of a sample by measuring time of flight in the distance of flight of ions generated from the surface of the sample by irradiation of pulse laser beams and the temperature in the irradiation portion, and finding a mass spectrum by using the measured data. SOLUTION: Pulse laser beams outgoing from a laser beam source 3 are converged in almost 0.3μm on a sample 2 with an objective lens 5b. Ions generated are accelerated with an ion drawing electrode 8a, and run parallel to an ion path 21 through an electrostatic ion lens 8b. Within a time-of-flight mass spectrometer 1, the dispersion of ion velocities is eliminated with a reflectoron 9, the ions are detected with an ion detector 10. A time measuring circuit 31 measures the time from irradiation of the pulse laser beams detected with a light intensity detector 30a to detecting ions with an ion detector 10, and a calculator 32 obtains a mass based on the time obtained.

5. 发明专利

JPS5243367A RESIN SEAL TYPE SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5243367A
公开(公告)日：1977-04-05
申请号：JP11770875
申请日：1975-10-01
申请人： HITACHI LTD
发明人： SAKIMOTO MASAKAZU , OHISA TOSHIHIKO , YAMADA EIICHI
IPC分类号： H01L23/29 , H01L23/06 , H01L23/31
摘要： PURPOSE:An element region is covered thereon with a PIQ resin being stable to heat, and is further coated thereon with an Si base coating material extending to a semiconductor substrate, whereby occurence of leak current is prevented.

6. 发明专利

JPS516474A PUREENAKOZONO HANDOTAISOCHI 失效
公开(公告)号：JPS516474A
公开(公告)日：1976-01-20
申请号：JP7638374
申请日：1974-07-05
申请人： HITACHI LTD
发明人： SAKIMOTO MASAKAZU , OGU TOSHIHIKO
IPC分类号： H01L29/73 , H01L21/283 , H01L21/312 , H01L21/331 , H01L29/08

7. 发明专利

JPH10117054A SEMICONDUCTOR DEVICE AND ITS MOUNTING METHOD 失效
公开(公告)号：JPH10117054A
公开(公告)日：1998-05-06
申请号：JP29112396
申请日：1996-10-14
申请人： HITACHI LTD
发明人： OKADA KOJI , TANAKA MASAKI , SHOJI TAKAO , SAKIMOTO MASAKAZU , MASUDA MASACHIKA
IPC分类号： H01L23/28 , H05K1/18 , H05K3/30 , H05K3/34
摘要： PROBLEM TO BE SOLVED: To immerse and solder a package with a large standoff. SOLUTION: Solder stoppers 14 whose openings are slightly smaller than the openings of outer lead 13 group strings and whose heights are slightly lower than the standoff S are protrusively provided at the end parts before and behind the back face of a resin-sealing body 12 of SOJ.IC (IC provided with small outline J-lead package) 10. At the time of soldering SOJ.IC 10 to a printed wiring board 20 in a wave-type jet tank, SOJ.IC 10 is temporarily fixed to the printed wiring board 20. Thus, the occurrence of a crack in the resin-sealing body 12 can be prevented, since melted solder is prevented from intruding into the standoff space of the back of the resin-sealing body 12 even with SOJ.IC having the large standoff at the time of soldering SOJ.IC 10 to the printed wiring board 20. Since large adhesive force can be realized even if an adhesive layer 17 is formed to be thin, SOJ.IC 10 which is temporarily fixed to the printed wiring board 20 can be prevented from dropping during transportation.

8. 发明专利

JPH0854293A TEMPERATURE MEASURING METHOD FOR SEMICONDUCTOR FINE WIRING BY MICROSCOPICAL FLUORESCENT SPECTROMETRY 失效
公开(公告)号：JPH0854293A
公开(公告)日：1996-02-27
申请号：JP12998895
申请日：1995-05-29
申请人： HITACHI LTD
发明人： YAMAGUCHI HIROKATSU , EGUCHI KINYA , SAKIMOTO MASAKAZU , ITO TOSHIKI
IPC分类号： G01K11/12 , G01J5/10 , G01N21/64 , H01L21/66
摘要： PURPOSE:To measure the temperature of fine wirings of several mum of semiconductor by measuring a plurality of the positions of the temperatures of an insulating film, obtaining a temperature gradient, and extrapolating it for the position of the wirings. CONSTITUTION:Symbol W is wirings; P1, a nonfluorescent insulating film; P2, a fluorescent insulating film; and S, a board. Temperatures T(0), T(x), etc., are measured at the two or more positions of the film P2. These temperatures are represented by the function f(r) of the distance (r) from the center of the wirings and a coefficient (a) by T=af(r)+T0. The f(r) is obtained by using a finite element method. The coefficient (a) is obtained by using the actually measured values of the T(0), the T(x), and the wiring temperature is estimated by extrapolating the above formula for the position of the wirings. According to this, fluorescent is measured from the plurality of the positions of the film P2 even on the wirings of the width of 1mum or less, and the temperature gradient is obtained to measure the temperature of the wirings. This is useful for predicting the life of the wirings. Further, abnormal heat generation of the infinitesimal position of the wirings can be detected, and also useful for detecting a defective position.

9. 发明专利

JPH06302663A SCREENING DEVICE 失效
公开(公告)号：JPH06302663A
公开(公告)日：1994-10-28
申请号：JP8827393
申请日：1993-04-15
申请人： HITACHI LTD
发明人： SAKIMOTO MASAKAZU , YOSHIGAMI JIRO , TANAKA MASAKI
IPC分类号： H01L21/66
摘要： PURPOSE:To positively discover and eliminate the defect of a gate oxide film quickly and efficiently in the initial process for manufacturing a semiconductor wafer. CONSTITUTION:A voltage is applied to a resistor 2, a diffusion layer 5b from a probe 3, a gate oxide film 5c, and gate electrodes 5d by a high-voltage power supply 1 and then is discharged to the ground by a relay 4. The potential difference between the diffusion layer 5b and the gate electrodes 5d in t sec after the discharge is Vt (V) and an electric field is generated according to the film thickness of the gate oxide film 5c between the gate electrodes 5d, thus breaking only the defective part of the oxide film and hence eliminating defective particles by electrically checking a device by setting the impressed voltage properly according to the film thickness of the oxide film so that the electric field strength becomes, for example, approximately 10MV/cm for a normal film thickness.

10. 发明专利

JPS63281968A TAPING FORM OF RESIN MOLDED PART 失效
公开(公告)号：JPS63281968A
公开(公告)日：1988-11-18
申请号：JP11681987
申请日：1987-05-15
申请人： HITACHI LTD
发明人： YOSHIDA TORU , KANEDA AIZO , MUTO MASAAKI , SAKIMOTO MASAKAZU , NISHI KUNIHIKO
IPC分类号： B65D73/02 , H01L23/00
摘要： PURPOSE:To prevent the moisture in an atmosphere from penetrating in a resin molded part, by partially or entirely covering the surface of a part with a moisture impervious film. CONSTITUTION:An Al lower surface tape 20 having an adhesive layer 6 is adhered to a carrier tape 1 on the side opposite to the surface loaded with a resin molded IC 5 of said tape 1 through the adhesive layer 6 but a part of said adhesive layer is allowed to fly out from a hole 3 toward the surface loaded with the resin molded IC 5 to be adhered to said IC 5. Further, an Al upper surface tape 21 is adhered to the surface of the resin molded IC 5 on the side opposite to the surface, to which the above Al lower surface tape 7 is bonded, of said IC 5 through the adhesive layer 6. Since the Al tapes are bonded to both upper and lower surfaces, which occupying the greater part of the surface area of a package, of the resin molded IC, the penetration of moisture in the resin molded IC from an atmosphere can be reduced to a large extent. As the film adhered to the resin molded part, any metal impervious to moisture other than Al may be used and an insulating film like an alumite film may be used.

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