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1. 发明专利

JP2004319694A Substrate treatment equipment 审中-公开
公开(公告)号：JP2004319694A
公开(公告)日：2004-11-11
申请号：JP2003110441
申请日：2003-04-15
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： SATO SEISHIN
IPC分类号： H05H1/46 , B01J19/08 , C23C16/44 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To shorten a time needed for gas purging by effectively leaving residual gas stuck on the internal wall surface of a furnace throat flange and effectively exhausting the residual gas in a reactor. SOLUTION: Substrate treatment equipment is provided with a reaction tube 30 which forms a substrate treatment region for treating a wafer W, the furnace throat flange 4 which supports the reaction tube 30, a gas supply line 7 which is arranged in the furnace throat flange 4 and supplies gas inside the reaction tube 30, and an electrode 32a and a ground electrode 32b which generate plasma. A plasma generating means is constituted of the electrode 32a and the ground electrode 32b, and arranged on an inside wall of the furnace throat flange 4. The plasma generating means forms a plasma generating region 26 in the furnace throat flange 4. COPYRIGHT: (C)2005,JPO&NCIPI

2. 发明专利

JP2005011835A Plasma treatment device 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：JP2005011835A
公开(公告)日：2005-01-13
申请号：JP2003170740
申请日：2003-06-16
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： SATO SEISHIN , SATO NORIYOSHI , KOSHIMIZU TAKASHI , OGAWA UNRYU
IPC分类号： C23C16/505 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a plasma application device that can effectively remove electrostatically charged fine particles.
SOLUTION: In a plasma CVD apparatus, a gas used for treating a semiconductor is introduced into a vacuum vessel after the inside of the vessel is evacuated to a vacuum state, and a positive voltage is applied to a conductor of an NFP collector 40. When high-frequency power is impressed upon a lower electrode 32 from a high-frequency power source 120, fine particles are produced and electrostatically charged in negative polarity by means of an electronic sheath provided on the lower electrode 32. The fine particles electrostatically charged in negative polarity are guided by fine particle guiding grooves 320-1 to 320-8 and, in addition, induced by the conductor of the NFP collector 40 and removed from the surface of the lower electrode 32. In addition, when the metallic lower electrode 32 made of aluminum etc., is coated with a ceramic coating film 329, the occurrence of metallic contamination can be prevented.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供能够有效地去除带静电的微粒的等离子体施加装置。解决方案：在等离子体CVD装置中，将容器内部抽真空至真空状态之后，将用于处理半导体的气体引入真空容器中，并将正电压施加到NFP收集器的导体当高频电源从高频电源120施加到下电极32上时，通过设置在下电极32上的电子护套产生微粒并以负极性静电充电。微粒静电充电为负极性的微粒引导槽320-1至320-8引导，另外由NFP收集器40的导体引导并从下电极32的表面移除。此外，当金属低由铝等制成的电极32涂覆有陶瓷涂膜329，可以防止金属污染的发生。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2004288744A Substrate processing apparatus 审中-公开
公开(公告)号：JP2004288744A
公开(公告)日：2004-10-14
申请号：JP2003076428
申请日：2003-03-19
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： MINAMI MASAKATSU , SATO SEISHIN
IPC分类号： C23C16/44 , H01L21/205 , H01L21/22 , H01L21/68 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which is capable of improving processing uniformity at an upstream of a boat, preventing any defective substrate from occurring in an after process, and improving both the yield and substrate processing quality as a whole. SOLUTION: The substrate is equipped with a reaction oven processing a substrate 21, a substrate holding jig 11 which supports the substrates 21 in the reaction oven, a gas inlet tube 9 feeding gas into the reaction oven, and a plurality of plates 25 and 26 provided at the upper side of the substrate holding jig 11. The plates are, at least, composed of two types of plates that are different from each other in area. COPYRIGHT: (C)2005,JPO&NCIPI

4. 发明专利

JP2003289069A Substrate treatment device 审中-公开
标题翻译：基板处理装置
公开(公告)号：JP2003289069A
公开(公告)日：2003-10-10
申请号：JP2002090184
申请日：2002-03-28
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： SATO SEISHIN
IPC分类号： C23C16/455 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To shorten a duration required for gas purging by efficiently removing remaining gas adhering on the inner wall surface of a furnace inlet flange and efficiently discharging it.
SOLUTION: The substrate treatment device is provided with a reaction tube 30 forming a substrate area for treating a wafer W, a furnace inlet flange 4 holding the reaction tube 30, a gas supply tube 7 that is provided at the furnace inlet flange 4 to supply gas into the reaction tube 30, and a plasma generating means 32 to generate plasma. The plasma generating means 32 comprises a ring electrode 12 for discharging and is provided on the inner peripheral wall of the furnace inlet flange 4. It is also provided at the furnace inlet flange 4 adjacent to the gas supply tube 7 for supplying purge gas, forming a plasma generating area 26 in the furnace inlet flange.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：通过有效地去除附着在炉入口法兰的内壁面上的残留气体并有效地排出气体来缩短气体净化所需的持续时间。解决方案：基板处理装置设置有形成用于处理晶片W的基板区域的反应管30，保持反应管30的炉入口法兰4，设置在炉入口凸缘处的气体供给管7 4以将气体供应到反应管30中，等离子体产生装置32产生等离子体。等离子体产生装置32包括用于放电的环形电极12，并设置在炉入口凸缘4的内周壁上。它还设置在邻近气体供应管7的炉入口凸缘4处，用于供应吹扫气体，形成炉入口法兰中的等离子体产生区域26。版权所有（C）2004，JPO

5. 发明专利

JP2004119800A Substrate processing device and method for manufacturing semiconductor device 审中-公开
公开(公告)号：JP2004119800A
公开(公告)日：2004-04-15
申请号：JP2002282938
申请日：2002-09-27
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： MINAMI MASAKATSU , SATO SEISHIN
IPC分类号： C23C16/46 , H01L21/205 , H01L21/22
摘要： PROBLEM TO BE SOLVED: To enhance the in-plane temperature uniformity of a wafer in manufacturing a semiconductor device, and to enhance the uniformity in film thickness.
SOLUTION: A substrate processing device comprises a processing chamber 4 for processing a substrate 10, a substrate holding member 17 for holding a substrate in the processing chamber in multi-stages in a horizontal attitude, and a heater unit 20 surrounding the processing chamber for heating the substrate. The heater unit comprises oblique heat generators 27b, 28b, 29b, 30b, 31b.
COPYRIGHT: (C)2004,JPO

6. 发明专利

JP2003332331A Manufacturing method of semiconductor device 审中-公开
标题翻译：半导体器件的制造方法
公开(公告)号：JP2003332331A
公开(公告)日：2003-11-21
申请号：JP2002142530
申请日：2002-05-17
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： SATO SEISHIN
IPC分类号： H01L21/3065 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which causes few damages on a treatment part and enables only the surfaces to be cleaned. SOLUTION: In a first process, a substrate 10 wherein an oxide film 12 is formed is subjected to nitriding. In the nitriding, N 2 or NH 3 is excited by plasma and a nitrided film 20 is formed. In a second process, a gas containing fluorine atoms (F) and a gas containing chlorine atoms (Cl) are excited by plasma and supplied. FCl acts as an etching species and selectively etches only the nitrided film 20, and removes an organic matter 14 and a metal 16 sticking to a surface of the oxide film 12 and a defect 18 formed in a surface of the oxide film 12. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种半导体器件的制造方法，其在处理部件上几乎没有损坏，并且仅能够清洁表面。解决方案：在第一工艺中，将形成氧化物膜12的衬底10进行氮化处理。在氮化中，通过等离子体激发N 2 或NH 3 ，形成氮化膜20。在第二种方法中，含有氟原子（F）的气体和含氯原子（Cl）的气体被等离子体激发并供给。 FCl用作蚀刻物质，并且仅选择性地蚀刻氮化膜20，并且去除粘附到氧化物膜12的表面的有机物质14和金属16以及形成在氧化物膜12的表面中的缺陷18。 >版权所有（C）2004，JPO

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