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1. 发明专利

JP2013012719A Substrate processing apparatus and substrate processing method 审中-公开
标题翻译：基板处理装置和基板处理方法
公开(公告)号：JP2013012719A
公开(公告)日：2013-01-17
申请号：JP2012108484
申请日：2012-05-10
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： NOMURA HISASHI , NOGUCHI YOHEI , TANIYAMA TOMOSHI
IPC分类号： H01L21/205 , C23C16/44
CPC分类号： H01L21/02458 , C23C16/4405 , C23C16/52 , H01L21/0254 , H01L21/0262 , H01L21/67069 , H01L21/67248
摘要： PROBLEM TO BE SOLVED: To provide a film formation method and a substrate processing apparatus which increase the number of substrates to be processed at one time and improve the productivity of a GaN epitaxial film.SOLUTION: A substrate processing apparatus processes a substrate having an epitaxial film. The substrate processing apparatus includes: a processing chamber 201 where the substrate is processed; a gas supply source 240 supplying at least a material gas forming the epitaxial film and a cleaning gas to the processing chamber; and a control part 280 controlling at least a temperature and a pressure in the processing chamber. The control part controls the gas supply source so that the cleaning gas is supplied to the processing chamber when the temperature and the pressure in the processing chamber reach a predetermined temperature and a predetermined pressure.
摘要翻译：要解决的问题：提供一次增加待处理基板的数量并提高GaN外延膜的生产率的成膜方法和基板处理装置。解决方案：基板处理装置处理具有外延膜的基板。基板处理装置包括：处理室201，其中处理基板; 至少将形成外延膜的材料气体和清洁气体供给到处理室的气体供给源240; 以及控制部280，其控制处理室中的至少温度和压力。控制部分控制气体供应源，使得当处理室中的温度和压力达到预定温度和预定压力时，清洁气体被供应到处理室。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2012138530A Substrate manufacturing method, semiconductor device manufacturing method and substrate processing apparatus 审中-公开
标题翻译：基板制造方法，半导体器件制造方法和基板处理装置
公开(公告)号：JP2012138530A
公开(公告)日：2012-07-19
申请号：JP2010291426
申请日：2010-12-28
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： NOMURA HISASHI , KASAHARA OSAMU , HORII SADAYOSHI , TOYODA KAZUYUKI , NOGUCHI YOHEI , NAKAMURA NAOTO , TANIGUCHI TAKESHI , KOSHIMIZU TAKASHI
IPC分类号： H01L21/205 , C23C16/34
摘要： PROBLEM TO BE SOLVED: To provide a film formation method and a substrate processing apparatus which can increase the number of substrates capable of processing at once, and improve productivity of a GaN epitaxial film.SOLUTION: A GaN film formation method comprises: a transferring step of transferring a substrate into a processing chamber; an initial film formation step including a first step of supplying a gallium chloride gas into the processing chamber, a first purge step of purging the gallium chloride gas from the processing chamber, a second step of supplying ammonia gas into the processing chamber after performing the first purge step, and a second purge step of purging the ammonia gas from the processing chamber; and an epitaxial film formation step of simultaneously supplying the gallium chloride gas and the ammonia gas into the processing chamber after performing the initial film formation step to form an epitaxial film.
摘要翻译：解决的问题：提供能够一次增加能够加工的基板的数量的成膜方法和基板处理装置，提高GaN外延膜的生产率。解决方案：GaN膜形成方法包括：将衬底转移到处理室中的转移步骤; 初始成膜步骤，包括向处理室供应氯化镓气体的第一步骤，从处理室中清除氯化镓气体的第一吹扫步骤，在执行第一步骤之后将氨气供应到处理室中的第二步骤吹扫步骤和从处理室吹扫氨气的第二吹扫步骤; 以及在进行初始成膜步骤之后将氯化镓气体和氨气同时供给到处理室中以形成外延膜的外延膜形成步骤。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2011071353A Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2011071353A
公开(公告)日：2011-04-07
申请号：JP2009221576
申请日：2009-09-25
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： NAKAYAMA MASANORI , NOGUCHI YOHEI
IPC分类号： H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can improve the coverage of grooves between elements.
SOLUTION: The method of manufacturing the semiconductor device includes a step of placing a substrate having grooves between elements on a susceptor, a first oxide film forming step of supplying first high-frequency power to a plasma generating unit and forming a first oxide film on the grooves of the substrate at a first deposition rate, and a second oxide film forming step of supplying second high-frequency power, which is lower than the first high-frequency power, to the plasma generating unit and forming a second oxide film on the first oxide film at a second deposition rate lower than the first deposition rate.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以改善元件之间的凹槽的覆盖的半导体器件的制造方法。解决方案：制造半导体器件的方法包括将具有沟槽的衬底放置在基座上的元件之间的步骤，向等离子体产生单元提供第一高频电力并形成第一氧化物的第一氧化膜形成步骤以第一沉积速率在基板的凹槽上形成薄膜;以及第二氧化膜形成步骤，将低于第一高频功率的第二高频功率提供给等离子体产生单元，并形成第二氧化膜以比第一沉积速率低的第二沉积速率在第一氧化物膜上。版权所有（C）2011，JPO＆INPIT

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