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    • 2. 发明专利
    • Manufacturing method of p-type diffusion layer and manufacturing method of solar cell element
    • P型扩散层的制造方法和太阳能电池元件的制造方法
    • JP2013026468A
    • 2013-02-04
    • JP2011160283
    • 2011-07-21
    • Hitachi Chem Co Ltd日立化成工業株式会社
    • SATO TETSUYAYOSHIDA MASATONOJIRI TAKESHIMACHII YOICHIIWAMURO MITSUNORIODA AKIHIROADACHI SHUICHIRO
    • H01L21/225H01L31/04
    • Y02E10/546Y02P70/521
    • PROBLEM TO BE SOLVED: To provide a manufacturing method of a p-type diffusion layer and a manufacturing method of a solar cell element capable of manufacturing a p-type diffusion layer without causing an internal stress and a warpage in a silicon substrate and obtaining a semiconductor substrate having no etching residue on the formed p-type diffusion layer in a manufacturing step of a solar cell element using the semiconductor substrate.SOLUTION: A manufacturing method of a p-type diffusion layer includes the steps of: performing thermal diffusion treatment for a semiconductor substrate provided with a p-type diffusion layer formation composition containing a glass powder including an acceptor element and a dispersion medium; cooling the semiconductor substrate heated for the thermal diffusion treatment at a cooling speed of 5°C/minute or higher and 300°C/minute or lower between a heating temperature of the thermal diffusion treatment and a glass-transition temperature of the glass powder; and removing a glass layer formed on the semiconductor substrate by etching after the cooling.
    • 要解决的问题:提供一种p型扩散层的制造方法和能够制造p型扩散层而不引起硅衬底内部应力和翘曲的太阳能电池元件的制造方法 并且在使用半导体衬底的太阳能电池元件的制造步骤中获得在形成的p型扩散层上没有蚀刻残留的半导体衬底。 解决方案:p型扩散层的制造方法包括以下步骤:对设置有包含受体元件和分散介质的玻璃粉末的p型扩散层形成用组合物的半导体基板进行热扩散处理 ; 在热扩散处理的加热温度和玻璃化转变温度之间以5℃/分钟以上且300℃/分以下的冷却速度冷却加热的热扩散处理用半导体基板; 并且在冷却之后通过蚀刻去除在半导体衬底上形成的玻璃层。 版权所有(C)2013,JPO&INPIT
    • 7. 发明专利
    • Solar cell manufacturing method
    • 太阳能电池制造方法
    • JP2012084898A
    • 2012-04-26
    • JP2011247602
    • 2011-11-11
    • Hitachi Chem Co Ltd日立化成工業株式会社
    • MACHII YOICHIYOSHIDA MASATONOJIRI TAKESHIOKANIWA KAORUIWAMURO MITSUNORIADACHI SHUICHIROAOYAGI TAKUYA
    • H01L31/04
    • Y02E10/546Y02E10/547
    • PROBLEM TO BE SOLVED: To provide a solar cell manufacturing method which forms an n-type diffusion layer in a specific area without forming unnecessary n-type diffusion layers in a manufacturing process of solar cells using silicon substrates.SOLUTION: A solar cell manufacturing method includes a process in which an n type diffusion layer formation composition containing glass powder including a donor element and a dispersion medium is applied to a part of a semiconductor substrate to form an n type diffusion layer formation composition layer and a heating process in which the semiconductor substrate, on which the n type diffusion layer formation composition layer is formed, is heated with an adequate temperature which allows the donor element to disperse from the glass powder to the semiconductor substrate so that an n type diffusion region is formed on the semiconductor substrate.
    • 解决的问题:提供一种在特定区域形成n型扩散层而不在不使用n型扩散层的太阳能电池的制造工艺中使用硅衬底的太阳能电池制造方法。 解决方案:一种太阳能电池的制造方法,其特征在于,包括将含有施主元素和分散介质的玻璃粉末的n型扩散层形成用组合物涂布在半导体基板的一部分上形成n型扩散层形成 组成层和加热工艺,其中形成有n型扩散层形成组合物层的半导体衬底以适当的温度加热,允许施主元件从玻璃粉末分散到半导体衬底,使得n 型扩散区形成在半导体衬底上。 版权所有(C)2012,JPO&INPIT