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    • 2. 发明专利
    • Semiconductor integrated circuit device
    • 半导体集成电路设备
    • JP2008004249A
    • 2008-01-10
    • JP2006331968
    • 2006-12-08
    • Renesas Technology Corp株式会社ルネサステクノロジ
    • SHIMANO HIROKIGYOTEN TAKAYUKIMORISHITA GENDOSAKA KATSUMI
    • G11C11/403G11C11/401G11C11/406G11C11/4074
    • PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device in which power consumption can be further reduced in a standby mode. SOLUTION: When a control signal STBY is input to a power source managing part 40 and asserted, upon receiving it, the power source managing part 40 asserts control signals PD, /PD instructing power reduction. Thereby, supply of the power source for an I/O part 20 is cut off. Also, a control part 30 executes intensive refresh for a memory cell array 15 by assert of a refresh instruction signal/SREF. After refresh operation of a whole memory space is completed, the refresh instruction signal/SREF is negated. After the refresh instruction signal/SREF is negated, a control signal ALIVE is negated, and supply of external power source voltage VDD and ground voltage GND for a power source control circuit 35 is cut off. Before refresh operation, power source supply for the power source control circuit 35 is executed again, and refresh operation is executed. These operations are repeated for each refresh period. COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:提供一种半导体集成电路器件,其中在待机模式下能够进一步降低功耗。 解决方案:当控制信号STBY被输入到电源管理部分40并被断言时,电源管理部分40在接收到电源管理部分40时断言指示功率降低的控制信号PD / PD。 因此,I / O部20的电源的供给被切断。 此外,控制部30通过刷新指示信号/ SREF的断言对存储单元阵列15进行强制刷新。 在整个存储空间的刷新操作完成之后,刷新指令信号/ SREF被否定。 在刷新指令信号/ SREF被否定之后,控制信号ALIVE被否定,并且切断用于电源控制电路35的外部电源电压VDD和地电压GND的电源。 在刷新操作之前,再次执行电源控制电路35的电源供应,并执行刷新操作。 每个刷新周期都会重复这些操作。 版权所有(C)2008,JPO&INPIT
    • 4. 发明专利
    • Solid state imaging apparatus
    • 固态成像装置
    • JP2010041460A
    • 2010-02-18
    • JP2008202728
    • 2008-08-06
    • Renesas Technology Corp株式会社ルネサステクノロジ
    • KATO HIROSHIDOSAKA KATSUMIMORISHITA GEN
    • H04N5/335H04N5/374H04N5/376H04N5/378
    • H04N5/3742H04N5/378
    • PROBLEM TO BE SOLVED: To obtain a solid state imaging apparatus with a data transfer function capable of outputting A/D-converted digital data to the outside at high speed. SOLUTION: Each of data blocks DB ((i) is 0 to 7) comprised of eight stages in a data bus part includes a couple of data lines L1, L2 and an amplifier AM connected to the couple of data lines L1, L2. The amplifier AM amplifies signals of the couple of data lines L1, L2 on a couple of data lines LA1, LA2 for amplification in timing indicated by an amplifier enable signal PAE and an amplifier control signal CSLA and outputs results as block data outputs BDout, BZDout. The data blocks DB each comprised of eight stages are then connected from the first stage to the final state so as to impart the block data outputs BDout, BZDout of the preceding stage to the couple of data lines L1, L2 of the following stage as block data inputs BDin, BZDin. COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:获得具有能够高速输出A / D转换的数字数据到外部的数据传送功能的固态成像装置。 解决方案:由数据总线部分中的八个级组成的数据块DB((i)为0至7)中的每一个包括一对数据线L1,L2和与之相连的放大器AM 一对数据线L1,L2。 放大器AMi放大在一对数据线LA1,LA2上的一对数据线L1,L2的信号,用于放大器使能信号PAE和放大器控制信号CSLA指示的定时放大,以及 输出结果作为块数据输出BDout,BZDout。 每个由八个级组成的数据块DB i然后从第一级连接到最终状态,以将前一级的块数据输出BDout,BZDout赋予下列数据线L1,L2 作为块数据输入BDin,BZDin。 版权所有(C)2010,JPO&INPIT
    • 7. 发明专利
    • Semiconductor device
    • 半导体器件
    • JP2007024865A
    • 2007-02-01
    • JP2006060651
    • 2006-03-07
    • Renesas Technology Corp株式会社ルネサステクノロジ
    • GYOTEN TAKAYUKIMORISHITA GENDOSAKA KATSUMI
    • G01K7/01
    • G01K7/01
    • PROBLEM TO BE SOLVED: To provide a technology capable of detecting the temperature of a semiconductor device with high accuracy. SOLUTION: A temperature detection circuit 14 for detecting the temperature of the semiconductor device comprises a short-period oscillator 15 for generating a clock signal CLK1 having positive-temperature characteristic related to frequency, a short-period oscillator 16 for generating a clock signal CLK2 having a negative temperature characteristic related to frequency, and a temperature signal generating section 17 for generating temperature signal TEMP that varies according to the temperature of the semiconductor device, based on the clock signals CLK1 and CLK2. COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:提供能够高精度地检测半导体器件的温度的技术。 解决方案:用于检测半导体器件的温度的温度检测电路14包括用于产生具有与频率相关的正温特性的时钟信号CLK1的短周期振荡器15,用于产生时钟的短周期振荡器16 信号CLK2具有与频率相关的负温度特性,以及温度信号发生部17,用于根据时钟信号CLK1和CLK2产​​生根据半导体器件的温度而变化的温度信号TEMP。 版权所有(C)2007,JPO&INPIT
    • 10. 发明专利
    • Arithmetic circuit using associative memory
    • 使用相关记忆的算术电路
    • JP2006092676A
    • 2006-04-06
    • JP2004278247
    • 2004-09-24
    • Renesas Technology Corp株式会社ルネサステクノロジ
    • NODA HIDEYUKIDOSAKA KATSUMIARIMOTO KAZUTAMI
    • G11C15/04G06F17/30
    • PROBLEM TO BE SOLVED: To make it possible to perform high-speed operation and simply perform arithmetic operation of bits between word storage parts at distant positions in the columnar direction. SOLUTION: Data for operation are stored in a CAM cell array 1. When saving in a match line tag register 3 an output of a match line amplifier 2 for detecting a searching result (tag information) outputted to a match line by searching operation, the tag information is immediately transmitted to a word line tag register 4. Then, the tag information taken out from the word line tag register 4 is given to a word line driver 5, and a word line corresponding to the CAM array 1 is activated to perform writing. With this constitution, after a first searching operation, for example, it becomes possible to perform searching operation in one word storage part and writing operation in another word storage part in parallel continuously. COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:为了使得可以执行高速操作并且简单地在柱状方向上的远处位置的字存储部分之间进行位的算术运算。

      解决方案:操作数据存储在CAM单元阵列1中。当在匹配线标签寄存器3中保存匹配线路放大器2的输出时,用于检测通过搜索输出到匹配线的搜索结果(标签信息) 操作时,将标签信息立即发送到字线标签寄存器4.然后,将从字线标签寄存器4中取出的标签信息提供给字线驱动器5,并且与CAM阵列1对应的字线为 激活执行写作。 利用这种结构,例如,在第一搜索操作之后,可以在一个字存储部分中执行搜索操作并且连续地并行地并行地写入另一个字存储部分中的操作。 版权所有(C)2006,JPO&NCIPI