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1. 发明专利

JP2007245173A Laser beam machining method and apparatus 有权
标题翻译：激光束加工方法和装置
公开(公告)号：JP2007245173A
公开(公告)日：2007-09-27
申请号：JP2006069985
申请日：2006-03-14
申请人： Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： FUKUYO FUMITSUGU , OMURA ETSUJI , FUKUMITSU KENJI , KUMAGAI MASAYOSHI , ATSUMI KAZUHIRO , UCHIYAMA NAOKI
IPC分类号： B23K26/06 , B23K26/38 , B23K26/40 , H01L21/301
CPC分类号： B23K26/0057 , B23K26/0622 , B23K26/0853 , B23K26/364 , B23K26/40 , B23K2201/40 , B23K2203/50 , C03B33/0222 , C03B33/037 , H01L21/78
摘要： PROBLEM TO BE SOLVED: To provide a laser beam machining method and apparatus capable of surely forming a different type of reformed region inside one workpiece. SOLUTION: A laser beam L having a standard pulse waveform is emitted to form, inside a silicone wafer 11 1 , a fusion processing region 13 1 that is large in the thickness direction of a workpiece 1 and that is easy to generate a crack 24 in that direction. A laser beam L having a second pulse waveform is then emitted to form, inside a silicone wafer 11 2 , a fusion processing region 13 2 that is small in the thickness direction of the workpiece 1 and that is hard to generate a crack 24 in that direction. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种能够确保在一个工件内形成不同类型的重整区域的激光束加工方法和装置。
解决方案：发射具有标准脉冲波形的激光束L，以在硅胶晶片11 1 内形成大的熔融处理区域13 1 工件1的厚度方向，并且容易在该方向上产生裂纹24。然后发射具有第二脉冲波形的激光束L，以在硅胶晶片11 2 内形成在厚度方向上较小的熔融处理区域13 2 工件1，并且难以在该方向上产生裂纹24。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2006255789A Laser beam machining method 有权
标题翻译：激光束加工方法
公开(公告)号：JP2006255789A
公开(公告)日：2006-09-28
申请号：JP2006116823
申请日：2006-04-20
申请人： Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： FUKUYO FUMITSUGU , FUKUMITSU KENJI , UCHIYAMA NAOKI , WAKUTA TOSHIMITSU
IPC分类号： B23K26/38 , B23K26/40 , B23K101/40 , B28D5/00 , C03B33/09 , H01L21/301
CPC分类号： B23K26/0057 , B23K26/40 , B23K2201/40 , B23K2203/50
摘要： PROBLEM TO BE SOLVED: To provide a laser beam machining method capable of precisely cutting a workpiece without producing a fusing and a cracking out of a predetermined cutting line on the surface of the workpiece. SOLUTION: A laser beam L is radiated with a condensed point P aligned to the inside of a wafer-shaped workpiece 1, and a modified area elongating along the predetermined cut line 5 of the workpiece 1 and whose one end and the other end do not reach the outer edge of the workpiece 1 is formed inside the workpiece 1, whereby the workpiece 1 can be cut along the predetermined cut line starting from the modified area. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够精确地切割工件而不产生定影和在工件表面上的预定切割线的开裂的激光束加工方法。解决方案：激光束L以与晶片状工件1的内侧对准的凝聚点P照射，并且沿着工件1的预定切割线5延伸并且其一端和另一端延伸的改质区域端部未到达工件1的外边缘1形成在工件1内部，从而可以沿着从修改区域开始的预定切割线切割工件1。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2006205260A Device for laser beam machining 有权
标题翻译：激光束加工装置
公开(公告)号：JP2006205260A
公开(公告)日：2006-08-10
申请号：JP2006056671
申请日：2006-03-02
申请人： Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： FUKUYO FUMITSUGU , FUKUMITSU KENJI , UCHIYAMA NAOKI , WAKUTA TOSHIMITSU
IPC分类号： B23K26/38 , B23K26/04 , B23K26/40 , B28D5/00 , C03B33/09 , H01L21/301
CPC分类号： B23K26/0057
摘要： PROBLEM TO BE SOLVED: To provide a device for laser beam machining capable of preventing an unnecessary crack from occurring on the surface of a work and preventing its surface from fusing. SOLUTION: The laser beam machining device 100 forms a modified area which is a start point for cutting within a wafer-shaped work 1 and includes an installation table 107 on which the work 1 is installed, a laser beam source 101 which emits a laser beam L, a condenser lens 105 which condenses the laser beam L into the work 1 and forms the modified area in the position of the condensed point P of the laser beam L, and an entire part controller 127 which has functions of aligning the condensed point P to the first position apart by a first distance in the thickness direction of the work 1 from the surface 3 of the work 1 and moving the condensed point P along a predetermined cutting line 5, then aligning the condensed point P to the second position apart by a second distance in the thickness direction of the work 1 from the surface 3 of the work 1 and moving the condensed point P along the predetermined cutting line 5. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于激光束加工的装置，其能够防止在工件的表面上发生不必要的裂纹并防止其表面熔化。＆lt; P＆gt;解决方案：激光束加工装置100形成作为在晶片状工件1内切割的起点的修改区域，并且包括安装工件1的安装台107，发射工件1的激光束源101 激光束L，聚光透镜105，其将激光束L会聚到工件1中，并在激光束L的聚光点P的位置上形成修正区域;以及整体部控制部127，凝聚点P到工件1的工件1的厚度方向上离开第一距离的第一位置，并沿着预定的切割线5移动聚集点P，然后将凝聚点P对准第二个从工件1的表面3沿着工件1的厚度方向分开第二距离，并沿着预定的切割线5移动凝固点P.（C）2006年，JPO＆NCIPI

4. 发明专利

JP2006192506A Laser processing method 有权
标题翻译：激光加工方法
公开(公告)号：JP2006192506A
公开(公告)日：2006-07-27
申请号：JP2006056649
申请日：2006-03-02
申请人： Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： FUKUYO FUMITSUGU , FUKUMITSU KENJI , UCHIYAMA NAOKI , WAKUTA TOSHIMITSU
IPC分类号： B23K26/40 , B23K26/38 , B23K101/40 , B28D5/00 , B28D5/04 , C03B33/09 , H01L21/301
CPC分类号： Y02P40/57
摘要： PROBLEM TO BE SOLVED: To provide a laser processing method in which any unnecessary crack is not generated in a surface of a work, and the surface is not fused. SOLUTION: In this method, a modified area forming a cut-starting point is formed inside a work 1 along a scheduled cutting line 5 of the work 1 by radiating laser beams L under a condition that the condensing point P is focused inside the wafer-like work 1, the peak power density at the condensing point is ≥1×10 8 (W/cm 2 ), the pulse width is ≤ 1 μs, and the numerical aperture is 0.55-0.8. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种激光加工方法，其中在工件的表面中不产生任何不必要的裂纹，并且表面不熔合。解决方案：在该方法中，通过在凝聚点P聚焦在内部的条件下照射激光束L，沿着工件1的预定切割线5在工件1内形成形成切割起点的改质区域晶圆状工件1，聚光点的峰值功率密度为≥1×10 8 （W / cm 2 ），脉冲宽度≤1μs，数值孔径为0.55-0.8。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2006175520A Laser beam machining method 有权
标题翻译：激光束加工方法
公开(公告)号：JP2006175520A
公开(公告)日：2006-07-06
申请号：JP2006069929
申请日：2006-03-14
申请人： Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： FUKUYO FUMITSUGU , FUKUMITSU KENJI , UCHIYAMA NAOKI
IPC分类号： B23K26/38 , B23K26/00 , B23K26/06 , B23K26/40 , B23K101/40 , H01L21/301 , H05K3/00
CPC分类号： B23K26/0057 , B23K26/40 , B23K2201/40 , B23K2203/50
摘要： PROBLEM TO BE SOLVED: To provide a laser beam machining method by which a semiconductor substrate is accurately cut along a predetermined cutting line. SOLUTION: By applying a laser beam after aligning the condensed point to the inside of the semiconductor substrate 1, cutting start regions 9a, 9b caused by modified areas which are extended along the predetermined cutting line of the semiconductor substrate 1 and one end and the other end do not reach the outer edge of the semiconductor substrate 1 are formed in the inside of the semiconductor substrate 1 and the semiconductor substrate 1 is cut along the predetermined cutting line by taking the cutting start regions 9a, 9b by the modified areas as the starting point of cutting. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种激光束加工方法，通过该激光束加工方法，半导体衬底沿着预定的切割线被精确地切割。解决方案：通过在将凝聚点对准半导体衬底1的内部之后施加激光束，由沿着半导体衬底1的预定切割线延伸的改变区域引起的切割开始区域9a，9b，以及一端并且在半导体衬底1的内部形成另一端未到达半导体衬底1的外边缘，并且通过将切割开始区域9a，9b沿着预定的切割线切割半导体衬底1的改质区域作为切割的起点。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2006167810A Laser beam machining method 有权
标题翻译：激光束加工方法
公开(公告)号：JP2006167810A
公开(公告)日：2006-06-29
申请号：JP2006069993
申请日：2006-03-14
申请人： Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： FUKUYO FUMITSUGU , FUKUMITSU KENJI , UCHIYAMA NAOKI , WAKUTA TOSHIMITSU
IPC分类号： B23K26/38 , B23K26/40 , B23K101/40 , B28D5/04 , H01L21/301
CPC分类号： B23K26/0057
摘要： PROBLEM TO BE SOLVED: To provide a laser beam machining method which generates no unnecessary cracking in the surface of a work and does not melt the surface. SOLUTION: A pulse laser L is radiated with a condensed point P aligned to the inside of a work 1 having a wafer type, and a modified area extentionally lying along the predetermined cut line 5 of the work 1, and in which one end and the other end reach the outer edge of the work 1 is formed inside the work 1, whereby the work 1 is cut along the predetermined cut line 5 starting from the modified area. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种激光束加工方法，其不会在工件的表面产生不必要的开裂并且不会熔化表面。解决方案：脉冲激光L以与晶片类型的工件1的内部对准的凝聚点P和沿着工件1的预定切割线5延伸的修改区域照射，并且其中一个在工件1内部形成端部和到达工件1的外边缘的另一端，由此从修改区域开始沿着预定切割线5切割工件1。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2006165593A Cutting method for semiconductor material substrate 有权
标题翻译：半导体材料基板的切割方法
公开(公告)号：JP2006165593A
公开(公告)日：2006-06-22
申请号：JP2006014111
申请日：2006-01-23
申请人： Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： FUKUYO FUMITSUGU , FUKUMITSU KENJI , UCHIYAMA NAOKI , WAKUTA TOSHIMITSU
IPC分类号： H01L21/301 , B23K26/03 , B23K26/38 , B23K26/40 , B23K101/40 , B28D5/00
CPC分类号： B23K26/0057
摘要： PROBLEM TO BE SOLVED: To provide a cutting method for semiconductor material substrate for enabling high precision cutting by preventing mechanical damages or large thermal damages to a semiconductor chip. SOLUTION: The cutting method of semiconductor material substrate comprises the steps of irradiating a laser beam to the internal side of the semiconductor material substrate 11, under the condition that the peak power density at the focusing point be 1×10 8 (W/cm 2 ) or higher, and the pulse width be 1μm or smaller and forming, into the semiconductor material substrate 11, a dissolving process region 13 including the region where the semiconductor material is re-solidified, after it has been once dissolved by relatively moving the focusing point and the semiconductor material substrate 11 along the planned cutting line of the semiconductor material substrate 11, and cutting the semiconductor material substrate 11 along the planned cutting line, by impressing an artificial force on the semiconductor material substrate 11. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供一种半导体材料基板的切割方法，用于通过防止对半导体芯片的机械损伤或大的热损伤来实现高精度切割。解决方案：半导体材料基板的切割方法包括以下步骤：在聚焦点处的峰值功率密度为1×10 的条件下，将激光束照射到半导体材料基板11的内侧， 8 / SP>（W / cm 2 / SP>）以上，脉冲宽度为1μm以下，向半导体材料基板11形成包含半导体材料的区域的溶解处理区域13 材料通过沿着半导体材料基板11的规划切割线相对移动聚焦点和半导体材料基板11而一旦溶解，并沿着规划的切割线切割半导体材料基板11，再次固化，由在半导体材料基板11上施加人造力。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2006150458A Laser beam machining device 有权
标题翻译：激光加工设备
公开(公告)号：JP2006150458A
公开(公告)日：2006-06-15
申请号：JP2006069918
申请日：2006-03-14
申请人： Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： FUKUYO FUMITSUGU , FUKUMITSU KENJI , UCHIYAMA NAOKI , WAKUTA TOSHIMITSU
IPC分类号： B23K26/38 , B23K26/06 , B23K26/40 , B23K101/40 , B28D5/00 , H01L21/301
CPC分类号： B23K26/0057
摘要： PROBLEM TO BE SOLVED: To provide a laser beam machining device capable of precisely cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work. SOLUTION: The laser beam machining device 100 comprises: a stage 107 adapted for mounting the object 1; a laser source 101 for emitting pulse laser light L; a converging lens 105 for converging the laser light L within the object 1 to form a modified spot at a converging point P thereof by the irradiation of the laser light L of one pulse; and a stage control unit 115 and an overall control unit 127 for forming modified regions by the plurality of modified spots formed along a predetermined cutting line 5 so as to make the distance between the adjoining modified spots almost certain, having a function of making the repeated frequency of the laser light L and the moving velocity of the converging point P almost certain and linearly moving the converging point P along the predetermined cutting line 5. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种激光束加工装置，其能够精确地切割工件而不产生定影和在工件表面上的预定切割线的开裂。
解决方案：激光束加工装置100包括：适于安装物体1的台107; 用于发射脉冲激光L的激光源101; 会聚透镜105，用于通过照射一个脉冲的激光L而将物体1内的激光L会聚在会聚点P处的修正光点; 以及台阶控制单元115和整体控制单元127，用于通过沿着预定切割线5形成的多个修改点形成改质区域，以使相邻修改点之间的距离几乎确定，具有使重复的功能激光L的频率和会聚点P的移动速度几乎确定并沿着预定切割线5线性移动会聚点P.（C）2006年，JPO和NCIPI

9. 发明专利

JP2006148175A Laser beam machining method 审中-公开
标题翻译：激光束加工方法
公开(公告)号：JP2006148175A
公开(公告)日：2006-06-08
申请号：JP2006056734
申请日：2006-03-02
申请人： Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： FUKUYO FUMITSUGU , FUKUMITSU KENJI , UCHIYAMA NAOKI , WAKUTA TOSHIMITSU
IPC分类号： H01L21/301 , B23K26/38 , B23K26/40 , B23K101/40
CPC分类号： B23K26/0057
摘要： PROBLEM TO BE SOLVED: To provide a laser beam machining method which neither generates unwanted splitting on the surface of a substrate nor melts the surface. SOLUTION: A laser beam L is irradiated from the backside 21 of the substrate 1 to the inside of the substrate 1 formed with a plurality of circuit sections 2 on the surface 3; while concentrating on a focusing point P by having a melting processing region 13 serve as a starting point of cutting is formed inside the substrate 1 along each of a plurality of predetermined cutting lines 5, set with respect to the substrate 1 so as to pass between adjacent circuit sections 2, as seen from the thickness direction of the substrate 1. COPYRIGHT: (C)2006,JPO&NCIPI

10. 发明专利

JP2006128723A Method of cutting semiconductor substrate 有权
标题翻译：切割半导体基板的方法
公开(公告)号：JP2006128723A
公开(公告)日：2006-05-18
申请号：JP2006013963
申请日：2006-01-23
申请人： Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
发明人： FUKUYO FUMITSUGU , FUKUMITSU KENJI , UCHIYAMA NAOKI , SUGIURA RYUJI
IPC分类号： H01L21/301 , B23K26/03 , B23K26/38 , B23K26/40 , B23K101/40
CPC分类号： B23K26/0057 , B23K26/40 , B23K2201/40 , B23K2203/50 , H01L2924/01015
摘要： PROBLEM TO BE SOLVED: To provide a method of cutting a semiconductor substrate which is capable of efficiently cutting the semiconductor substrate having a die bond resin layer interposed therebetween and a sheet adhered thereto, with a die bond resin layer. SOLUTION: The method comprises a process of forming a part to be cut by a melting treatment region 13 formed inside a semiconductor substrate 11 by irradiating laser beam along a line along which the part should be cut, on the condition that peak power density in a condensing point is 1×10 8 (W/cm 2 ) or more and pulse width is 1 μm or less, and a process of cutting the semiconductor substrate 11 and a die bond resin layer 23 along the part to be cut by extending the sheet 20 adhered to the semiconductor substrate 11 through the die bond resin layer 23. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决问题的方案：提供一种切割半导体衬底的方法，该半导体衬底能够有效地切割其间插入有管芯接合树脂层的半导体衬底和与其粘合的片材，并且具有管芯接合树脂层。解决方案：该方法包括通过在半导体衬底11内部形成的熔化处理区域13形成待切割部分的工艺，该激光束沿着沿切割部分的线照射激光束，聚光点的密度为1×10 8 （W / cm 2 ）以上，脉冲宽度为1μm以下，切割半导体基板11 以及通过使通过芯片接合树脂层23附着到半导体基板11上的片材20延伸而沿着待切割部分的芯片接合树脂层23。（C）2006，JPO＆NCIPI

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