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1. 发明专利

JPS62195113A SEMICONDUCTOR WAFER 失效
公开(公告)号：JPS62195113A
公开(公告)日：1987-08-27
申请号：JP3518086
申请日：1986-02-21
申请人： HITACHI MICROCUMPUTER ENG , HITACHI LTD
发明人： TAKAHASHI HIDEKAZU , SUDO YOSHIAKI , HASHIMOTO TOMOHIKO
IPC分类号： H01L21/02
摘要： PURPOSE:To stably convey a wafer by a method wherein notches are provided on the circumference of the wafer, and a belt having protruded parts corresponding to said notches is shifted. CONSTITUTION:Notches parts 3 (surrounded by a dotted line as shown in the diagram) are provided in the unused region in a wafer 1. The wafer 1 can be conveyed by fitting a handle 4 to the notched parts 3. Using the belt 7 having protruded parts 5, the wafer 1 can also be conveyed in a belt-conveyer system. As a result, the dropping trouble of the wafer arising when the wafer is being conveyed can be prevented, and especially, a stable conveyance of the wafer of large diameter can be made possible.

2. 发明专利

JPS62195112A SEMICONDUCTOR WAFER 失效
公开(公告)号：JPS62195112A
公开(公告)日：1987-08-27
申请号：JP3517986
申请日：1986-02-21
申请人： HITACHI MICROCUMPUTER ENG , HITACHI LTD
发明人： TAKAHASHI HIDEKAZU , SUDO YOSHIAKI , HASHIMOTO TOMOHIKO
IPC分类号： H01L21/02
摘要： PURPOSE:To prevent the trouble arising while a wafer is being conveyed by a method wherein a hole is provided at a part of the wafer of a large diameter, a hole of concentric circle is perforated in the center of the wafer, and this hole is utilized when the wafer is conveyed. CONSTITUTION:An aperture part 2 is provided on a wafer 1, the wafer of a large diameter is shifted collectively for every lot. Also, the wafer can be housed collectively, if a housing box 4 is used, for example. Said aperture part 2 also furnishes a path for reaction gas, carrier gas and the like, their spreading round to the wafer surface can be made uniform, thereby enabling a semiconductor device to reduce the irregularity of its characteristics.

3. 发明专利

JPS62206846A JIG FOR WAFER 失效
公开(公告)号：JPS62206846A
公开(公告)日：1987-09-11
申请号：JP4839986
申请日：1986-03-07
申请人： HITACHI MICROCUMPUTER ENG , HITACHI LTD
发明人： TAKAHASHI HIDEKAZU , SUDO YOSHIAKI , HASHIMOTO TOMOHIKO
IPC分类号： H01L21/677 , H01L21/67 , H01L21/68
摘要： PURPOSE:To hold a wafer stably by holding the wafer by supporting three points in the wafer. CONSTITUTION:A jig has three sliding arms 1, 1', 1'', and supports a large- diameter wafer at three points. The sliding arms 1, 1' push the wafer against the sliding arm 1'' by the elastic force of a spring section 3, and support the wafer by three points. The quality of material of a rubber group or a light metal is used as the quality of material of the sliding arms. Accordingly, the wafer can be carried positively by supporting three points in the wafer.

4. 发明专利

JPS62195142A WAFER CARRIER 失效
公开(公告)号：JPS62195142A
公开(公告)日：1987-08-27
申请号：JP3517886
申请日：1986-02-21
申请人： HITACHI MICROCUMPUTER ENG , HITACHI LTD
发明人： TAKAHASHI HIDEKAZU , SUDO YOSHIAKI , HASHIMOTO TOMOHIKO
IPC分类号： H01L21/673 , H01L21/67 , H01L21/68
摘要： PURPOSE:To carry large-aperture wafers using a carrier suitable to these by providing a hole in part of the large-aperture wafers. CONSTITUTION:Large-aperture wafers 1 can be transferred collectively every lot using a supporting body (carrier) by providing an opening part 2 in part of the wafers 1. The supporting body consists of a knob 6, pedestal parts 3 and a barlike supporting body 5. Moreover, a housing body 4 is provided with grooves 8 for housing stably a plurality of the wafers and long notch parts 7 for housing the barlike supporting body. Thereby, the transfer and housing of the large-aperture wafers can be carried out safely and speedily while the reliability is secured.

5. 发明专利

JPS63310160A LASER TRIMMING METHOD 失效
公开(公告)号：JPS63310160A
公开(公告)日：1988-12-19
申请号：JP14504887
申请日：1987-06-12
申请人： HITACHI LTD
发明人： YAMAZAKI KOICHI , OGURA SADAO , KOWASE YASUAKI , SUDO YOSHIAKI
IPC分类号： H01C17/24 , H01L21/822 , H01L27/01 , H01L27/04
摘要： PURPOSE:To make resistances and capacities adjustable and to realize a decrease in cost, by forming a reference resistance, a group of trimming resistances connected in series with this reference resistance, and parallel wirings which short the respective trimming resistances to each other, and next by trimming one part of each parallel wiring. CONSTITUTION:A reference resistance R0 is formed in a region surrounded by a hoop of an alternate long and short dashes line, and a group of trimming resistances R1, R2, R3,... are formed in a region not surrounded by this line. These trimming resistances R1, R2,... are connected in series with the reference resistance R0, and parallel wirings A, B,... are formed so that the trimming wirings R1, R2,... are shorted to each other. In the case of trimming, a resistance value across both terminals of each resistance is actually measured to determine wiring cut points (A, B, C...) from a different between the measured value Rm and a desired value R. In the case of R-Rm 0, no cutting is performed. In the case of R-Rm R1, the wiring at a B point is cut. Hence resistances and capacities are made adjustable to be formed with high precision and also a decrease in cost can be realized.

6. 发明专利

JPS63293970A SEMICONDUCTOR DEVICE AND FORMATION OF ELECTRODE USED FOR SAID SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS63293970A
公开(公告)日：1988-11-30
申请号：JP12827187
申请日：1987-05-27
申请人： HITACHI LTD
发明人： OGURA SADAO , YAMAZAKI KOICHI , KOWASE YASUAKI , SUDO YOSHIAKI
IPC分类号： H01L27/04 , H01L21/60 , H01L21/822 , H01L27/01
摘要： PURPOSE:To obtain electrode-resistor having high reliability and high accuracy without increasing cost by a method wherein an electrode material film is formed onto a semiconductor substrate, an electrode pattern is shaped through photographic processing, a window hole is bored to an insulating film on the pattern, one part of the surface of the electrode is probed, and one part of the electrode pattern is trimmed by a laser through the insulating film or the window hole, measuring the electrical characteristics of an element. CONSTITUTION:In an electrode-pattern forming process in a semiconductor device such as an IC, a diffusion layer 3 as one part of an element region is shaped through selective diffusion, using a surface oxide film 2 for an Si substrate 1, etc., as a mask, and a window hole for an electrode contact is bored to the oxide film 2. A metal such as Al is evaporated, and electrode patterns 4a, 4b are formed through photoetching employing a pattern mask. A measuring probe 5 is brought into contact with the pad section 4b for the electrode patterns, and an electrode is cut at a position to be trimmed 6 required through laser trimming, measuring a resistance value, etc., thus shaping a resistor 7. Lastly, a chip and leads are molded and sealed with a resin 12, etc.

7. 发明专利

JPS6423550A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6423550A
公开(公告)日：1989-01-26
申请号：JP17890687
申请日：1987-07-20
申请人： HITACHI LTD
发明人： OGURA SADAO , YAMAZAKI KOICHI , KOWASE YASUAKI , SUDO YOSHIAKI
IPC分类号： H01L27/04 , H01L21/82 , H01L21/822
摘要： PURPOSE:To select a function or a specification by a simple process without increasing the number of terminals by a method wherein a wiring part connected to one circuit is cut by irradiation with a laser or the like. CONSTITUTION:After a wiring operation of a circuit to be used for both a PAL system and an NTSC system in an LSI for a TV receiving set has been completed, e.g., the NTSC system is selected by trimming one wiring part by using a laser because a purpose of use is decided; in this case, the wiring part 5 connected to the PAL system is cut (as shown by ah X mark in the figure). This trimming operation by the laser is executed by appropriately combining a Q switching frequency according to a material to be trimmed, its thickness and width, a byte size and the average power value. By this setup, the number of terminals can be reduced; a switching operation from the outside is not required; a structure becomes simple; it is possible to select a required function and a required specification from a variety of functions and circuit specifications.

8. 发明专利

JPS63293971A LASER TRIMMING METHOD 失效
公开(公告)号：JPS63293971A
公开(公告)日：1988-11-30
申请号：JP12827287
申请日：1987-05-27
申请人： HITACHI LTD
发明人： KOWASE YASUAKI , OGURA SADAO , YAMAZAKI KOICHI , SUDO YOSHIAKI
IPC分类号： H01L21/82 , H01L21/822 , H01L27/01 , H01L27/04
摘要： PURPOSE:To improve conditions in which laser beams are applied, and to enhance the efficiency of cutting by forming a lower-layer metallic film to a section, to which a metallic film pattern to be trimmed is shaped, while forming the metallic pattern to be trimmed onto the lower-layer metallic film through an inter-layer insulating film. CONSTITUTION:A wiring 5 consisting of second layer Al is irradiated with laser beams within a range shown in the figure A, and trimmed. L represents a section trimmed by laser beams. Since a first layer Al film (a dummy film) 3 is shaped previously just under the trimming region A, a recessed section is buried and a foundation SiO2 film to the first layer Al film is to a certain extent flattened even when there are irregularities in the foundation SiO2 film, the second layer Al wiring formed onto the foundation SiO2 film through a thick inter-layer film 4 has uniform film thickness and a flat surface, and the title laser trimming method is extremely effective to laser beams having the different efficiency of cutting by the flatness of a film surface and film thickness.

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