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    • 4. 发明专利
    • MAGNETO-RESISTIVE THIN-FILM MAGNETIC HEAD AND ITS PRODUCTION
    • JP2000222710A
    • 2000-08-11
    • JP2411199
    • 1999-02-01
    • HITACHI METALS LTD
    • MEGURO SATOSHIFUJII SHIGEOMIMA HIROYUKIIFUKU TOSHIHIROFURUICHI SHINJI
    • G11B5/39
    • PROBLEM TO BE SOLVED: To assure the stable insulation characteristic of an electrode film and an upper shielding film by subjecting the ends of a voltage resistant protective film formed in the state of resist masking of a stencil shape used in a stage for connecting electrodes and the end of a magnetosensitive part to self-alignment so as to approximately align both. SOLUTION: This magnetic head consists of the structure obtained by holding the magnetic domain control film 418 and electrode film 419 installed on both sides of an MR element part 425 between upper and lower shielding films 413 and 423 via gap insulating layer films 414 and 422 and connecting the electrode to both flanks of the MR element part 425. The magnetosensitive part is insulated by an upper gap insulating film 422 and is insulated from an upper shielding film 423 by the voltage resistant protective film 420 and the upper gap insulating film 422. The voltage resistant protective film 420 is formed in the state of resist masking of the stencil shape used in the stage for connecting the magnetic domain control film 418 and the electrode film 419 to both flanks of the MR element part 425. The end (c) of the magnetosensitive part and the ends (d) and d' of the voltage resistant protective film are subjected to self-alignment so as to be approximately aligned.
    • 6. 发明专利
    • Magnetoresistive effect head and its manufacture
    • 磁电效应及其制造
    • JP2000076626A
    • 2000-03-14
    • JP24268498
    • 1998-08-28
    • Hitachi Metals Ltd日立金属株式会社
    • MEGURO SATOSHIKOBAYASHI TOSHIOSHIMOE OSAMU
    • G11B5/39
    • PROBLEM TO BE SOLVED: To prevent the electrostatic breakdown of a magneto resistive effect(MRE) element, in an MRE head, by releasing static electricity caused between the terminals of the MRE element and between the magnetic shields during the manufacture and the use.
      SOLUTION: The device is such that an MRE head part and an induction head part are integrally laminated on an insulated substrate 10, that a semiconductor 20 is provided between the insulated substrate and the thin film coil of the induction head, and that the semiconductor 20 is designed to have a diode, in which the forward and the reverse directions are parallelly connected, between the terminals of the MRE element 13 and a diode, in which the forward and the reverse directions are serially connected, between the magnetic shields 12, 15. In addition, before the MRE head part is formed, the semiconductor is made on the insulated substrate 10.
      COPYRIGHT: (C)2000,JPO
    • 要解决的问题:为了防止MRE头中的磁阻效应(MRE)元件的静电击穿,通过在制造和使用期间释放在MRE元件的端子和磁屏蔽之间引起的静电。 解决方案:该装置使得MRE头部和感应头部分整体地层压在绝缘基板10上,半导体20设置在绝缘基板和感应头的薄膜线圈之间,并且半导体20 被设计为在MRE元件13的端子和其间的正向和反向串联连接的二极管之间,在磁屏蔽12,15之间具有二极管,其中正向和反向平行连接 另外,在形成MRE头部之前,在绝缘基板10上形成半导体。