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    • 3. 发明专利
    • MANUFACTURE OF SEMICONDUCTOR DEVICE
    • JPS6365630A
    • 1988-03-24
    • JP20794286
    • 1986-09-05
    • HITACHI LTDHITACHI VLSI ENG
    • WADA YASUOOGA KAZUHIROISHIKAWA AKIRAOYU SHIZUNORIKASHU NOBUYOSHI
    • H01L21/316H01L21/768
    • PURPOSE:To improve the ion stopping power while preventing the film stress from occurring by a method wherein a coated film is filled with the most com pact fine particles. CONSTITUTION:A silicon substrate 1 is spin-coated with ethanol solution of 5 % silanol (Si(ON4)) containing 3 weight % of SiO2 fine particles in diameter of 0.1 mum at 3000 rpm to form a coated glass layer 3 containing fine particles in grooves and then the substrate 1 is annealed in a baking furnace kept at 200 deg.C for 20 minutes. At this time, inside of grooves is thickly coated with the solution in around 0.4mum while projections are thinly coated with the solution in around 0.05 mum. The film thickness ratio between upper and lower step difference depending on the depth and width etc., can be specified as around 1:10. The total film thickness of around 2 mum can be attained by coating glass film containing fine particles three times. At this time, glass films 4-6 spin- coated on the silicon substrate 1 respectively at 2000 rpm are baked at around 200 deg.C for 30 minutes to be dehydrated for condensation. Through these procedures, the gas releasing amount can be minimized even if the substrate 1 is annealed at 900 deg.C for around 20 minutes after coating process.