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1. 发明专利

JPS63293969A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS63293969A
公开(公告)日：1988-11-30
申请号：JP12832987
申请日：1987-05-27
申请人： HITACHI LTD , HITACHI TOBU SEMICONDUCTOR LTD , HITACHI MICROCUMPUTER ENG
发明人： OGURA SADAO , YAMAGUCHI TAKASHI , YAMAZAKI KOICHI , FUKUDA AKIROU , NAGUMO HIDEKARA , MORI SHUNJI , KAMEGAKI KAZUYUKI
IPC分类号： H01L27/04 , H01L21/822
摘要： PURPOSE:To improve the performance of an IC, and to enhance yield by forming all diffused resistors in the same block in a semiconductor device, in which a plurality of functional blocks are formed on a substrate and circuits including a plurality of the diffused resistors are formed into each block, along one direction on the main surface of the substrate. CONSTITUTION:Various functional blocks 2, 3... are disposed onto one main surface of one semiconductor chip 1, and these functional blocks represent a hand path-amplifier circuit 2, an APC (an auto-phase-control) circuit) 3, a power bias circuit 4, a cross processing circuit 5, etc. in an IC for a television, and circuits having correlation on characteristics such as an AMP 1, an AMP 2, an AMP 3, etc., are includ-. ed in one functional block 2. Accordingly, all resistors determining the characteristics of these circuits are arranged in the same direction in one functional block made up of the circuits having correlation on characteristics, thus acquiring correlation having high accuracy.

2. 发明专利

JPS62188358A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPS62188358A
公开(公告)日：1987-08-17
申请号：JP2882686
申请日：1986-02-14
申请人： HITACHI MICROCUMPUTER ENG , HITACHI LTD
发明人： KITAMURA YUKINORI , MAYUZUMI SHIRO , OGURA SADAO , KAMEGAKI KAZUYUKI , MIYAZAKI HIDEO , YAMAZAKI KOICHI
IPC分类号： H01L21/8226 , H01L27/02 , H01L27/082
摘要： PURPOSE:To improve the transmission characteristics of signals by a method wherein, when a vacant space above color regions laid between IIL rows is used as an interconnection region by laying non-diffused regions between color regions below an interconnection region, the parasitic distribution capacity of interconnection connected to the interconnection region is substantially diminished. CONSTITUTION:Multiple rows of IIL arrayed with the gates of multiple IIL are formed; color regions 3 comprising diffused layers are laid between respective IIL rows; a vacant space on a surface insulating film 6 covering the color regions 4 is used as an interconnection region 3. The color regions 4 below the interconnection regions 3 in such a semiconductor integrated circuit device are interrupted by non-diffused regions 41. For example, the non-diffused regions 41 are formed by interrupting the color regions 4 below the interconnection region 3. Said non-diffused regions 41 are not removed of oxide films to form the diffused layers so that the thickness d2 of surface insulating film 6 in that parts may be made larger than the thickness d1 in the color regions 4. Resultantly, overall distribution capacity parasitic on an interconnection 7 alternately passing through both regions 4 and 41 is leveled off in the diminishing direction.

3. 发明专利

JPS6267852A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPS6267852A
公开(公告)日：1987-03-27
申请号：JP20649185
申请日：1985-09-20
申请人： HITACHI LTD , HITACHI MICROCUMPUTER ENG
发明人： OGURA SADAO , KAMEGAKI KAZUYUKI , YAMAZAKI KOICHI , MIYAZAKI HIDEO , KITAMURA YUKINORI , MAYUZUMI SHIRO
IPC分类号： H01L27/082 , H01L21/3205 , H01L21/8226 , H01L23/52 , H01L27/02 , H01L29/41
摘要： PURPOSE:To automatize the design of wiring pattern and to optimize it so as to make the best use of the advantages of I L's, by connecting the I L's with wires arranged at the same pitch as electrodes of the I L. CONSTITUTION:A semiconductor integrated circuit device provided with I L's has first-layer wires Ly juxtaposed in the direction Y, second-layer wires Lx juxtaposed in the direction X orthogonally to the first-layer wires Ly, and through holes TH for connecting the wires Ly in the first layer to the wires Lx in the second layer. Said first-layer wires Ly are located in the first layer in multiple wiring layers and the second-layer wires Lx are located in the second layer therein. By appropriately connecting the first-layer wires Ly and the second-layer wires Lx through the through holes TH, the I L's can be connected with each other by wires arrange regularly.

4. 发明专利

JPH0562825B2 失效
公开(公告)号：JPH0562825B2
公开(公告)日：1993-09-09
申请号：JP19194485
申请日：1985-09-02
申请人： HITACHI MICROCUMPUTER ENG , HITACHI LTD
发明人： MAYUZUMI SHIRO , KITAMURA YUKINORI , OGURA SADAO , MYAZAKI HIDEO , KAMEGAKI KAZUYUKI , YAMAZAKI KOICHI
IPC分类号： H01L27/082 , H01L21/331 , H01L21/8226 , H01L27/08 , H01L29/73 , H01L29/732

5. 发明专利

JPH0322468A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPH0322468A
公开(公告)日：1991-01-30
申请号：JP15749189
申请日：1989-06-19
申请人： HITACHI LTD , HITACHI MICROCUMPUTER ENG
发明人： KITAMURA YUKINORI , OGURA SADAO , MAYUZUMI SHIRO , MORI SHUNJI , FUKAMACHI TOSHIYUKI , KOBAYASHI YUJI , YAMAZAKI KOICHI , FURUHATA MAKOTO , KAMEGAKI KAZUYUKI
IPC分类号： H01L21/761 , H01L21/822 , H01L21/8222 , H01L21/8226 , H01L27/02 , H01L27/04 , H01L27/06 , H01L27/082 , H04N9/79
摘要： PURPOSE:To improve component density of a semiconductor integrated circuit device used in color VCR by a method wherein a luminance signal processing element and a color signal processing element of the VCR are constructed in different areas of the main surface of a semiconductor substrate respectively and an isolating zone supplying a stable bias on an alternating-current basis is constructed between the luminance signal processing element and the color signal processing element on the main surface of said semiconductor device. CONSTITUTION:A luminance signal processing element 11 and a color signal processing element 12 of color VCR 1 are mounted on one semiconductor integrated circuit device(IC) 10. In other words, the luminance signal processing element 11 and the color signal processing element 12 are formed monolithic. This semiconductor integrated circuit device 10 is mounted on a resin-sealed type semiconductor device 20. The semiconductor integrated circuit device 10 divides each of the luminance signal processing element 11 and the color signal processing element 12 is two substantially and each element divided in two vertically is disposed with the central part used as the boundary. In the resin-sealed type semiconductor device 20, a 41st terminal is disposed between the luminance signal processing element 11 and the color signal processing element 12 and a direct-current reference power being stable on an alternating-current basis is impressed thereon. The area of a shared part can be lessened much, in particular, by forming the elements in one chip, and thus the component density can be improved.

6. 发明专利

JPH01170039A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH01170039A
公开(公告)日：1989-07-05
申请号：JP32709087
申请日：1987-12-25
申请人： HITACHI LTD , HITACHI TOBU SEMICONDUCTOR LTD , HITACHI MICROCUMPUTER ENG
发明人： OGURA SADAO , YAMAGUCHI TAKASHI , YAMAZAKI KOICHI , FUKUDA AKIROU , NAGUMO HIDETAKA , MORI SHUNJI , KAMEGAKI KAZUYUKI
IPC分类号： H01L27/04 , H01L21/822 , H01L27/08
摘要： PURPOSE:To cut down space of a resistor forming part in a linear IC, etc., thereby augmenting the integration by a method wherein the gaps between diffused layers of adjacent resistors are specified to be multiple types differentiated from one another in different positions. CONSTITUTION:The gap W' between two diffused resistors 2 (R1, R2) is specified to be, e.g., around 10mum in consideration of the expansion of depletion layers 3 and the errors in mask. On the other hand, adjacent diffusion resistors R3, R4 are parallel-connected on the parts of diffused layers or electrode parts at almost equivalent potentials so that the expansion of depletion layers, the MOS effect, etc., between resistor need not be taken into consideration enabling the resistor gap W2' to be specified narrower than the gap W1', e.g., 8mum. Through these procedures, the gap W2' between adjacent diffusion resistors R3, R4 at equivalent potentials can be specified narrower than the gap W1' between the adjacent diffusion resistors R1, R2 at different potentials so that the space may be cut down to make IC highly integrated without imperiling the functions of IC.

7. 发明专利

JPS6318657A LAMINATED RESISTOR ELEMENTS AND SEMICONDUCTOR DEVICE USING SAME 失效
公开(公告)号：JPS6318657A
公开(公告)日：1988-01-26
申请号：JP16190186
申请日：1986-07-11
申请人： HITACHI MICROCUMPUTER ENG , HITACHI LTD
发明人： KITAMURA YUKINORI , MORI SHUNJI , OGURA SADAO , YAMAZAKI KOICHI , TAKAHASHI KENJI
IPC分类号： H01L27/04 , H01L21/822 , H01L27/08
摘要： PURPOSE:To improve integration density, by providing an isolating layer between a semiconductor element and three layers of resistor elements, and forming a third resistor element by an electrode lead-out layer, which is formed together with an embedded layer that is embedded in a semiconductor substrate and the isolating layer. CONSTITUTION:An epitaxial n type Si layer 12 is formed on a p type Si substrate 11. An n type embedded layer 13 is diffused by implanting ions of Sb and the like in the surface of the substrate 11. A p type embedded resistor 14 is formed by implanting B ions in the surface of the substrate 11 including the n embedded layer and diffusing the ions in the layer 12, which is grown thereon. A p diffused layer 15 is formed by ion implanting diffusion using the isolation process from the surface of the epitaxial (n) layer so that the layer 15 is connected to the resistor 14. Electrodes 17 and 17 are provided on the diffused layers 15 and 15. The layer 12 is connected to a potential Vcc. A p diffused resistor 16 is formed by shallow ion implantation and diffusion in the surface of the epitaxial (n) layer. Electrodes 18 and 18 are provided at both ends of the reistor 16. Thus the resistors 14 and 16 can be formed at a high integration density.

8. 发明专利

JPS62281459A CAPACITOR ELEMENT AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING THE SAME 失效
公开(公告)号：JPS62281459A
公开(公告)日：1987-12-07
申请号：JP12339086
申请日：1986-05-30
申请人： HITACHI MICROCUMPUTER ENG , HITACHI LTD
发明人： MAYUZUMI SHIRO , YAMAZAKI KOICHI
IPC分类号： H01L27/04 , H01L21/822
摘要： PURPOSE:To enable a capacitor element having less parasitic capacity and being almost independent of bias and polarity to be formed inside a semiconductor integrated circuit device, together with realizing composition of high- accuracy and high-frequency circuits or the like, by forming one of electrodes in the capacitor element by using polycrystal silicon. CONSTITUTION:One 62 of electrodes in a capacitor element Cm is formed of polycrystal silicon. For example, the second insulating film 52 is formed on a polycrystal silicon layer 62 which is shaped in a definite pattern on a surface insulating film 51 of a p--type silicon semiconductor substrate 1, and an evaporation aluminium electrode 7 is formed thereon to compose the capacitor element Cm. In this case, both the insulating films 51 and 52 are formed of silicon oxidizing ones and the capacitor element Cm is composed so that the silicon oxidizing film of the second insulating film 52 serves as a dielectric.

9. 发明专利

JPS62281444A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPS62281444A
公开(公告)日：1987-12-07
申请号：JP12338986
申请日：1986-05-30
申请人： HITACHI MICROCUMPUTER ENG , HITACHI LTD
发明人： MAYUZUMI SHIRO , KITAMURA YUKINORI , OGURA SETSUO , MIYAZAKI HIDEO , KAMEGAKI KAZUYUKI , YAMAZAKI KOICHI
IPC分类号： H01L27/118 , H01L21/82 , H01L21/822 , H01L27/04 , H01L27/08
摘要： PURPOSE:To optimize interconnection in conformity with reduction of interconnecting regions and enlarge a utility factor of semiconductor chip areas, by interposing dummy gates appropriately between logic gates and then forming terminal parts thereon for relaying the interconnections between the logic gates. CONSTITUTION:A semiconductor integrated circuit device having logic circuit parts, in which numerous logic gates are disposed, is provided with dummy gates interposed appropriately between the logic gates disposed, where terminal parts are formed to relay interconnections between the logic gates. IIL, for example, are formed to be disposed in numbers along both sides of a p-type injector region 2 shaped in a band layout, and respective IIL are connected appropriately through two layers of aluminium interconnections Al1, Al2, and throughholes TH so that circuits having definite lagic functions can be formed. Dummy gates IIL', which are not used as logic gates, are interposed appropriately between numerous IIL, together with a terminal part TC formed there to relay interconnections Al1 and Al2 between IIL.

10. 发明专利

JPS63107162A VERTICAL TYPE PNP TRANSISTOR 失效
公开(公告)号：JPS63107162A
公开(公告)日：1988-05-12
申请号：JP25170686
申请日：1986-10-24
申请人： HITACHI LTD , HITACHI MICROCUMPUTER ENG
发明人： OGURA SADAO , YAMAZAKI KOICHI , TAKAHASHI KENJI , KITAMURA YUKINORI , MORI SHUNJI
IPC分类号： H01L29/73 , H01L21/331 , H01L27/08 , H01L29/72
摘要： PURPOSE:To obtain a transistor characterized by a small occupying area and an excellent current characteristic without a base-current compensating circuit, by forming a p type diffused layer, which is to become a collector, and a p layer, which is to become an emitter in alignment with said p type diffused layer, on the surface of an n-type semiconductor layer, and making a current to flow to the surface side from the inside of a substrate. CONSTITUTION:A p type Si substrate 11, an n embedded layer 12, a p embedded layer 13, a p embedded layer 14 and the like are provided. They are diffused at the same time as the n embedded layer 12 by ion implantation into the surface of the substrate 11. An n-type Si layer 15 is formed thereon by epitaxial growing. A p layer 16, which is to become an emitter lead-out part, and p isolation layers 17 are deeply diffused by simultaneous, selective ion implantation in the surface of the n-type epitaxial layer 15 and connected to the p embedded layers 13 and 14. A plurality of p layers 18, which are to become collectors, are formed over the p embedded layers as shallow diffused layers. A shallow n layer 19, which is to become a base lead-out part, is diffused. Thus multiple collectors are obtained in a small area, and a compact current mirror circuit device is implemented.

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