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1. 发明专利

JP2001224926A CRACKING TREATMENT METHOD FOR FLUORINE-CONTAINING COMPOUND, CATALYST AND CRACKING TREATMENT DEVICE 失效
公开(公告)号：JP2001224926A
公开(公告)日：2001-08-21
申请号：JP2001016497
申请日：2001-01-25
申请人： HITACHI LTD
发明人： SUGANO SHUICHI , IKEDA SHINZO , YASUDA TAKESHI , YAMASHITA HISAO , AZUHATA SHIGERU , TAMADA SHIN , IRIE KAZUYOSHI
IPC分类号： B01D53/86 , B01J21/04 , B01J21/06 , B01J21/08 , B01J23/06 , B01J23/10 , B01J23/14 , B01J23/42 , B01J23/745 , B01J23/75 , B01J23/755 , B01J27/043 , C01B7/19 , C01B17/45 , C01B21/083
摘要： PROBLEM TO BE SOLVED: To efficiently subject a fluorine compound containing the fluorine alone as halogen, such as CF4.C2F6 to a cracking treatment. SOLUTION: Gaseous flow which contains the fluorine compound containing the fluorine alone as the halogen is brought into contact with a catalyst containing Al, such as a catalyst consisting of Al and Ni, Al and Zn or Al ant Ti at about 200 to 800 deg.C in the presence of steam, by which the fluorine in the gaseous flow is converted to hydrogen fluoride. Accordingly, the fluorine compound containing the fluorine alone as the halogen is efficiently subjected to the crocking treatment.

2. 发明专利

JP2000201036A HIGH FREQUENCY AMPLIFIER CIRCUIT DEVICE 失效
公开(公告)号：JP2000201036A
公开(公告)日：2000-07-18
申请号：JP123999
申请日：1999-01-06
申请人： HITACHI LTD , HITACHI TOBU SEMICONDUCTOR LTD
发明人： YASUDA TAKESHI , MASUDA AKIRA
IPC分类号： H01L27/06 , H01L21/8234 , H01L29/80 , H03F3/193 , H03F3/195 , H03G3/10
摘要： PROBLEM TO BE SOLVED: To decrease the gate voltage of a control transistor in proportion to an AGC potential, and to reduce a voltage by providing a prescribed circuit constitution by using dual FET for both a main transistor and the transistor for controlling a gain. SOLUTION: A common part 21 of transistors TC1 and TC2 of a control transistor Q2 in a dual gate structure is connected through a resistor R2 with a gate G1 of a main body transistor Q1, and a gate G2 of the main transistor Q1 is connected with a gate 1 of the control transistor Q2. When an AGC potential is impressed to the gate G2, the voltage of the gate G1 of the control transistor Q2 is decreased according as the AGC potential is decreased, and currents running through the control transistor Q2 are decreased, and a potential VC of the common part 21 is increased according to the decrease of a voltage. As a result, a voltage is supplied to the gate G1 of the main transistor Q1 so that the function of a forward AGC function can be obtained. Thus, the voltage of the gate 1 of the control transistor is decreased in proportion to the decrease of the AGC potential so that distortion characteristics at the time of attenuating a gain can be improved.

3. 发明专利

JPH1176980A TREATMENT OF PRINTED BOARD 失效
公开(公告)号：JPH1176980A
公开(公告)日：1999-03-23
申请号：JP24501597
申请日：1997-09-10
申请人： HITACHI LTD
发明人： YASUDA TAKESHI , SATO KOJI , SATO KAZUHIKO , YAMASHITA HISAO , AZUHATA SHIGERU
IPC分类号： B09B5/00 , B02C21/00 , B07B9/00 , B09B3/00 , H05K3/22
摘要： PROBLEM TO BE SOLVED: To separate and recover metals and nonmetals in a waste printed board by heating a waste printed board to generate gas from resinous materials in the board and to weaken component-integrating functions in the board, and then, mechanically crushing the resulting weakly-integrated waste printed board by applying external force to the board. SOLUTION: In this treatment, a waste printed board 1 is charged into a board heating device 2 to heat the board 1, wherein, although the board heating temp. somewhat depends on the kind of the board 1, as this temp., any temp. within the range of 270 to 450 deg.C may be adopted. In this board heating device 2, resinous materials in the board 1 are converted, and concurrently, gas is generated from the resinous materials and discharged as waste gas 7. Accordingly, in the waste printed board 1 thus heat-treated, the integration of metallic components such as gold platings, copper foils and copper wires, with nonmetallic inorganic materials such as glass wool is weakened. However, sometimes, copper through-holes formed by plating, or the like, fine copper wires, etc., and these different kinds of materials are bound to each other. Therefore, the heat-treated waste printed board 1 is further crushed by a crusher 3 to easily separate metals and nonmetallic inorganic materials from each other.

4. 发明专利

JPH1170322A DECOMPOSITION TREATMENT METHOD OF FLUORINE-CONTAINING COMPOUND, CATALYST AND DECOMPOSITION TREATMENT DEVICE 失效
公开(公告)号：JPH1170322A
公开(公告)日：1999-03-16
申请号：JP17254398
申请日：1998-06-19
申请人： HITACHI LTD
发明人： SUGANO SHUICHI , IKEDA SHINZO , YASUDA TAKESHI , YAMASHITA HISAO , AZUHATA SHIGERU , TAMADA SHIN , IRIE KAZUYOSHI
IPC分类号： B01D53/86 , A62D3/00 , B01J21/04 , B01J21/06 , B01J23/06 , B01J23/10 , B01J23/14 , B01J23/42 , B01J23/745 , B01J23/75 , B01J23/755
摘要： PROBLEM TO BE SOLVED: To efficiently decompose and treat fluorine compounds containing only fluorine as halogen such as CF4 and C2 F6 . SOLUTION: In the method for decomposing and treating fluorine-containing compounds, gas flow consisting of fluorine compounds containing only fluorine as halogen is brought into contact with an Al-containing catalyst such as a catalyst consisting of Al and Ni, Al and Zn, Al and Ti at about 200-800 deg.C in the existence of steam and fluorine contained in the gas flow and fluorine contained in gas flow is converted into hydrogen fluoride. Further, the device for decomposing and treating the fluorine-containing compounds is equipped with a reactor 15 filled with the catalyst 14 containing Al, a water adding vessel in which steam is added to gas flow containing a compound consisting of fluorine and one of carbon, sulfur and nitrogen treated in the reactor 15 and a heating means consisting of a preheater 12 and a heater 13 by which one hand of the catalyst 14 filled in the reactor 15 and the gas flow containing fluorine compounds 1 introduced into the reactor 15 is heated at such temperature that the fluorine compounds 1 are hydrolyzed.

5. 发明专利

JPH10303917A TRAFFIC SHAPING MEANS, ATM EXCHANGE AND ATM-NIC 失效
公开(公告)号：JPH10303917A
公开(公告)日：1998-11-13
申请号：JP11098597
申请日：1997-04-28
申请人： HITACHI LTD
发明人： MAKIMOTO AKIO , OZAKI NAOHIKO , YASUDA TAKESHI , MIYAO MASUAKI , MORIWAKI NORIHIKO , KASAHARA HIROAKI , MATSUOKA MAKOTO
IPC分类号： H04Q3/00 , H04L12/28 , H04L12/815 , H04L12/863
摘要： PROBLEM TO BE SOLVED: To provide a shaping means capable of outputting a free cell and an effective cell at an optional and fixed rate and to effectively construct an ATM(asynchronous transfer mode) exchange capable of accumulating plural interfaces with various kinds of speed (64 kbps×N). SOLUTION: In this shaping means of an ATM cell to output the effective cell and the free cell at a rate of n to m-n, a first storage means 707 to hold a value of n, a second storage means 705 to hold a value of m and a third storage means 706 to hold a variable are provided. When an added value obtained by adding the value held by the first storage means to the value held by the third storage means by an adder 711 is equal to or larger than the value held by the second storage means 705, the effective ATM cell is read from a cell buffer 106 with a selector, the value obtained by subtracting the value held by the second storage means from the added value by a subtractor 709 is simultaneously and newly stored in the third storage means 706 and when the added value is smaller than the value held by the second storage means 705, the free cell is outputted from a free cell pattern holding part 704 and an operation to newly store the added value in the third storage means 705 is simultaneously performed by every cell time.

6. 发明专利

JPH10274407A INDUCED HEATING TYPE INCINERATED ASH MELTING FURNACE AND INCINERATED ASH MELTING PROCESSING MEHTOD 失效
公开(公告)号：JPH10274407A
公开(公告)日：1998-10-13
申请号：JP7955497
申请日：1997-03-31
申请人： HITACHI LTD
发明人： OKOCHI ISAO , SATO KOJI , IKEDA SHINZO , ARATO TOSHIAKI , YASUDA TAKESHI , YAMASHITA HISAO
IPC分类号： F23G5/00 , F23J1/00 , F23J1/08 , F23J9/00 , F27D11/06
摘要： PROBLEM TO BE SOLVED: To prevent a molten slag from belting fixed with an emission opening in an induced heating type incinerated ash melting furnace. SOLUTION: Incinerated ashes are melted by heating a conductive heating element 10 laid out inside a furnace and a molten slag is discharged from a slag hole 7 provided projectingly into the furnace from the bottom of the furnace, thereby producing a molten slag sump between the slag hole and the furnace bottom. This construction makes it possible to prevent the temperature effect of the molten slag and prevent the temperature effect produced by contact with the open air when the slag is discharged.

7. 发明专利

JPH10202061A TREATMENT OF GAS CONTAINING ORGANIC HALOGEN COMPOUND AND CATALYST FOR DECOMPOSITION OF ORGANIC HALOGEN COMPOUND 失效
公开(公告)号：JPH10202061A
公开(公告)日：1998-08-04
申请号：JP917597
申请日：1997-01-22
申请人： HITACHI LTD
发明人： SUGANO SHUICHI , ARATO TOSHIAKI , IKEDA SHINZO , YASUDA TAKESHI , YAMASHITA HISAO , AZUHATA SHIGERU , TAMADA SHIN
IPC分类号： B01D53/86 , B01J23/30 , B01J27/047
摘要： PROBLEM TO BE SOLVED: To decompose an org. halogen compd. with a catalyst maintaining its performance for a long time and to produce the catalyst for decomposition. SOLUTION: A flow of gas contg. less than 10vol.% org. halogen compd. is brought into contact with a catalyst contg. titania, silica and tungsten oxide as titania surface-coated with a porous layer of silica and tungsten oxide in the presence of less than 30vol.% steam based on the total flow rate of the gas to treat the org. halogen compd. The concn. of the silica is 0.5 to

8. 发明专利

JPH08239727A GAS TURBINE AND MULTIPLE ELECTRIC POWER PLANT 失效
公开(公告)号：JPH08239727A
公开(公告)日：1996-09-17
申请号：JP1149396
申请日：1996-01-26
申请人： HITACHI LTD
发明人： DOI HIROYUKI , YASUDA TAKESHI , KASHIMURA TETSUO , FUKUI HIROSHI
IPC分类号： F01D9/02 , C22C19/05 , F01K23/10 , F02C7/00
摘要： PURPOSE: To meet a recent demand for the elevation of temp. and to improve reliability by constituting a gas turbine of a material having respectively specified composition and strength characteristic. CONSTITUTION: An Ni-base alloy, having a composition consisting of, by weight ratio, 0.05-0.20% C, 20-25% Co, 15-25% Cr, 1.0-3.0% Al, 1.0-3.0% Ti, 1.0-3.0% Nb, and >=55% Ni, is used for a first-stage gas injection nozzle among the important members of turbine composed of disks of more than three stages, and further, the preheating temp. causing no crack at the time of TIG welding is regulated to =50% Ni and also having γ' and γ'' phases. Further, the disk, in which the blade is to be planted, is composed of a martensitic steel in which fracture strength at 450 deg.C and 10 h is regulated to 40kg/mm .

9. 发明专利

JPH07321289A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH07321289A
公开(公告)日：1995-12-08
申请号：JP10945594
申请日：1994-05-24
申请人： HITACHI LTD , HITACHI TOBU SEMICONDUCTOR LTD
发明人： YASUDA TAKESHI
IPC分类号： H01L27/04 , H01L21/822 , H01L27/095
摘要： PURPOSE:To incorporate an MIM type capacity which has large capacitance characteristics and high withstand voltage by arranging a through hole, which is in a second layer interlayer insulating film and reaches an electrode which is electrically connected with a second layer electrode, above a first layer electrode area. CONSTITUTION:A semiconductor integrated circuit device which has an MIM type capacity is composed of electrodes of a first layer electrode 6m to a third layer electrode 12m and interlayer insulating films 17 and 10 provided between the electrodes. Especially, a second layer electrode 9m and a through hole 11, which is on the second layer insulating film 10 and reaches the electrode which is electrically connected with the second layer electrode 9m, are arranged above the area of the first electrode 6m. Since the interlayer insulating films 7 and 10 which are to be the insulating films for the MIM type capacity and the electrodes 6m, 9m and 12m on both sides of the interlayer insulating films have a flat plane, dielectric strength is improved and the capacity is increased.

10. 发明专利

JPH06192791A WORKING ROLL FOR MULTISTAGE ROLLING AND ITS PRODUCTION 失效
公开(公告)号：JPH06192791A
公开(公告)日：1994-07-12
申请号：JP34689792
申请日：1992-12-25
申请人： HITACHI LTD , HITACHI MATERIAL ENG KK
发明人： ERA MASAYUKI , UCHIDA TETSUO , KONDO YASUO , YASUDA TAKESHI , SHIMOTAMURA OSAMU , KIKUHARA TAKASHI
IPC分类号： B21B27/00 , C21D9/38 , C22C38/00 , C22C38/52
摘要： PURPOSE:To provide a hardened roll for a multistage rolling mill having high hardness and high wear resistance and excellent in dimple resistance by means of high temp. tempering. CONSTITUTION:The working roll for multistage rolling mill is composed of a high alloy steel having a composition consisting of, by weight, 2.45-4% C, 1-2.5% Si, 0.6-2% Mn, 0.3-1.5% Ni, 6-8% Cr, >11-15% Mo, 10-20% W, 5-10% V, 12-16% Co, and the balance essentially Fe and is formed by performing hardening and tempering. By this method, the hardness of this roll is regulated to >=HRC68 and increased by >=HRC2 as compared with conventional high V-high speed tool steel and high Mo-high Co high speed tool steel, and further, wear resistance and dimple resistance can be improved by >=2 folds and i1.3 folde respectively.

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