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1. 发明专利

JPS60104719A INRETIA SUPERCHARGE CONTROL DEVICE 失效
公开(公告)号：JPS60104719A
公开(公告)日：1985-06-10
申请号：JP21385183
申请日：1983-11-14
申请人： HITACHI LTD
发明人： HOKARI TOMIO , YAMADA KOUICHIROU
IPC分类号： F02B27/02 , F02B33/44 , F02B37/00
摘要： PURPOSE:To improve combustion efficiency of an engine over a full operation region by providing a valve for communicating among a plurality of resonant vessels, and opening the same valve in a high speed operation region to communicate among the respective resonant vessels and thereby moderate inertia supercharge and closing the same valve in middle and low speed operation regions to stop the aforesaid moderation of the supercharge. CONSTITUTION:Exhaust gas from an engine 1 rotates a turbine runner 3 and a compressor runner 4 of a supercharger 2 to compress intake air 5, and the compressed air is sent into the engine 1 through a pressure balancing vessel 6, resonant tubes 7, 8, and resonant vessels 9, 10. A valve 11 is provided between respective resonant vessels 9, 10, which is capable of communicating them with each other. The valve 11 is opened and closed by energyzing a coil 14 by a driving circuit 13 based on a control signal from a microcomputer 12. A number-of- engine revolution signal N and acceleration degree-of-opening signal S detected by respective sensors 15, 16 are respectively inputted into the microcomputer 12 via a pulse shaper 17 and an AD converter 18. The valve 11 is opened only when the engine 1 is in a high speed operation region.

2. 发明专利

JPS6012725A FORMATION OF SILICON THIN FILM 失效
公开(公告)号：JPS6012725A
公开(公告)日：1985-01-23
申请号：JP11822083
申请日：1983-07-01
申请人： HITACHI LTD
发明人： YASUDA YASUMICHI , YAMADA KOUICHIROU , TANAKA TOMOYUKI
IPC分类号： H01L21/205
摘要： PURPOSE:To prevent generation of SiO2 powder in the gas supply system by reducing amount of oxygen to be contained in the raw material gas, on the occasion of forming Si film by the vapor growth method through thermal decomposition of SiH4. CONSTITUTION:In case the thermal decomposition of SiH4 is carried out in the processe where the oxygen, phosphorus or boron doped Si film is formed by vapor growth method, amount of impurity oxygen contained in the raw material gas or doping gas is set to 0.1% or less. Thereby, SiO2 is not contaminated by reaction of SiH4 and O2, the Si film of emitter member without failure by pin hole can be formed, and short-circuit failure between emitter and base can be eliminated.

3. 发明专利

JPS59106153A Manufacture of silicon transistor 失效
标题翻译：硅晶体的制造
公开(公告)号：JPS59106153A
公开(公告)日：1984-06-19
申请号：JP21556582
申请日：1982-12-10
申请人： Hitachi Ltd
发明人： YAMADA KOUICHIROU , YASUDA YASUMICHI , TANAKA TOMOYUKI
IPC分类号： H01L29/73 , H01L21/331 , H01L29/72
CPC分类号： H01L29/72
摘要： PURPOSE:To prevent short-circuit between emitter and base through emitter electrode metal film by covering the circumference of opening of insulating film with amorphous silicon prior to the pre-processing etching before formation of amorphous silicon emitter film. CONSTITUTION:The P type base region 25 is diffused from the one main surface 24 and formed on a single crystal silicon base material 23 where the collector region 22 having a higher specific resistance than the N type low specific resistance region 21 is formed on said N type low specific resistance region. Next, an insulating film such as thermal oxide film of emitter forming region 27 on the main surface 24 is eliminated and the amorphous silicon film is formed in the thickness of 1mum. The amorphous silicon region 28 is formed by the ordinary photo etching technique in such a manner as surrounding the emitter forming region 27. Thereafter, the N type impurity doped amorphous silicon emitter region 29 is formed in the emitter forming region 27 on the main surface 24 and thereby the emitter base junction 30 is formed. Next, an insulating film of the base electrode extending part on the main surface 24 is eliminated and the base and emitter electrodes 31 are formed.
摘要翻译：目的：通过在形成非晶硅发射极膜前的预处理蚀刻之前，通过覆盖绝缘膜的开口周围的绝缘膜，通过发射极电极金属膜来防止发射极和基极之间的短路。构成：P型基极区域25从一个主表面24扩散并形成在单晶硅基底材料23上，在单晶硅基底材料23上形成比N型低电阻率区域21高的电阻率的集电极区域22 型低电阻率区域。接着，除去主表面24上的发射极形成区域27的热氧化膜等绝缘膜，形成厚度1μm的非晶硅膜。通过普通的光蚀刻技术以包围发射极形成区域27的方式形成非晶硅区域28.此后，在主表面24上的发射极形成区域27中形成N型掺杂杂质的非晶硅发射极区域29 从而形成发射极基极结30。接下来，消除了在主表面24上的基极延伸部分的绝缘膜，形成基极和发射极31。

4. 发明专利

JPS58138222A SUPERCHARGER OF EXHAUST TURBINE 失效
公开(公告)号：JPS58138222A
公开(公告)日：1983-08-17
申请号：JP1870882
申请日：1982-02-10
申请人： HITACHI LTD
发明人： OKAZAKI TSUTOMU , UCHIYAMA KIYOUICHI , ANDOU HIROYUKI , YAMADA KOUICHIROU
IPC分类号： F02B37/18 , F02B37/12 , F02B37/22
摘要： PURPOSE:To obtain a supercharged pressure in a wide range from the low speed to the high speed of an engine by dividing scrolls and nozzle sections into two chambers having different passage areas with a bulkhead and by providing a control valve in a passage connecting to a scroll and a nozzle section with a large capacity. CONSTITUTION:When the electromagnet 22 of an actuator is not energized and a valve 18 is opened, the discharge gas is flowed into both scrolls 10a, 10b through a nozzle width of La+Lb. On the other hand, when the valve 18 is closed, the discharge gas is flowed into only the scroll 10a. If this scroll area is made small corresponding to the gas flow during the low speed operation of an engine, a whirling motion sufficient to rotate a turbine during a low flow can be applied to the gas.

5. 发明专利

JPS5818522A TURBOCHARGER 失效
公开(公告)号：JPS5818522A
公开(公告)日：1983-02-03
申请号：JP11642681
申请日：1981-07-27
申请人： HITACHI LTD
发明人： YAMADA KOUICHIROU
IPC分类号： F02B37/02 , F02B37/12 , F02B37/22
摘要： PURPOSE:To enable supercharging action stable in the overall range of load on an engine, by selectively using an exhaust gas by-pass method or an exhaust gas passage cross-sectional area change method depending on the load on the engine to conduct its exhaust gas to the turbine of a turbocharger. CONSTITUTION:An exhaust gas passage 4 for conducting exhaust gas from cylinders 3 to the swirl chamber 8 of a turbocharger is divided into a main and an auxiliary passages 10, 11 to the swirl chamber. An exhaust by-pass 13 for making a detour around the turbine impeller 5 of the turbocharger is connected to the main passage 10 and a flow control valve 16 is provided at their connection. The divided sections of the main and the auxiliary passages 10, 11 are connected to each other through a control valve 24. The control valves 16, 24 are regulated by a controller 29 connected to a load detector 31, an intake air flow meter 32, etc. In a range of light-load slow rotation, the control valves 16, 24 are closed. When said range is exceeded, the valve 16 is opened. When a range of heavy-load rapid rotation is exceeded, the valve 24 is opened.

6. 发明专利

JPS56106032A APPARATUS FOR CONTROLLING AMOUNT OF BYYPASS EXHAUST GAS USED IN ENGINE EQUIPPED WITH SUPERCHARGER 失效
公开(公告)号：JPS56106032A
公开(公告)日：1981-08-24
申请号：JP784580
申请日：1980-01-28
申请人： HITACHI LTD
发明人： NAGAI KAZUO , YAMADA KOUICHIROU , SUZUKI SATOSHI
IPC分类号： F02B37/12 , F02B37/18
摘要： PURPOSE:To achieve easy and accurate control on the valve opening timing of a valve provided in a by-pass passage by-passing an exhaust turbine for opening and closing the by-pass passage, by providing an adjustment screw additionally on the side of a pressure chamber of a diaphragm valve adapted for actuating said valve in the by-pass passage. CONSTITUTION:When the pressure of air at the outlet of a compressor of a supercharger becomes higher than a predetermined level during high-output, high-speed operation of the engine, a diaphragm 16 is moved downward, against the force of a spring 19, by the pressure of air introduced from an inlet pipe 21 into a pressure chamber 18. Resultantly, a valve 9 is opened by a connecting rod 15, so that a portion of exhaust gas carried to a turbine is discharged from a by-pass port 6. In such an apparatus for controlling the amount of exhaust gas, operated as above, a projection is provided at the center of an upper case 31 of a diaphragm means 30, and an adjustment screw 32 is threaded into the projection. Further, a spring seat 29 is disposed at the bottom of the screw 32, and an adjustment spring 27 is interposed between the spring seat 29 and a retainer plate 25 for the diaphragm 16.

7. 发明专利

JPS5675921A DEVICE FOR PREVENTING SUPERCHARGER FROM SURGING 失效
公开(公告)号：JPS5675921A
公开(公告)日：1981-06-23
申请号：JP15394879
申请日：1979-11-27
申请人： HITACHI LTD
发明人： YAMADA KOUICHIROU
IPC分类号： F02B33/44 , F02B37/00
摘要： PURPOSE:To prevent a mixture supply device with a supercharger for a gasoline driven vehicle from surging by permitting a surge detecting actuator to open and close a butterfly valve provided in a surge preventing path. CONSTITUTION:A butterfly valve 19 provided in a surge preventing path 3 is connected to a surge detecting actuator 20 through a link 23 and rod 24. This actuator 20 is partitioned by a diaphragm 21, and a chamber receiving a spring 22 communicates to a portion upstream of a butterfly valve 19 in the surge preventing path 3 through a conduit 26. The rod 24 is connected to the atmospheric side of the diaphragm 21. When a throttle valve 2 is rapidly closed, a surging phenomenon takes place and at the same time the butterfly valve 19 in the surge preventing path 3 is opend so that difference between pressure in a purge pipe 7 and negative pressure PC1 in an inlet 5 of a compressor is reduced to stop the surging.

8. 发明专利

JPS5651651A HUMIDITYYSENSITIVE SEMICONDUCTOR ELEMENT AND ITS MANUFACTURE 失效
公开(公告)号：JPS5651651A
公开(公告)日：1981-05-09
申请号：JP12679979
申请日：1979-10-03
申请人： HITACHI LTD
发明人： YOKOYAMA TAKASHI , IKEDA TAKAE , MISAWA YUTAKA , YAMADA KOUICHIROU , OKAMURA MASAHIRO , SUZUKI HIROSHI , YATSUNO KOUMEI
IPC分类号： G01N27/12 , G01N27/00 , H01L29/78
摘要： PURPOSE:To improve sensitivity and mass-producibility by specifying the matter of a humidity-sense part. CONSTITUTION:Paste is applied as surface protective humidity-sense layer 4 of transistor base 1 and then thermally set. The paste is obtained by adding organosilane (b) having at least one hydrogen atom combined with a silicon atom to diorganopolysiloxane (a) having a vinyl group at its molecular chain terminal so that each vinyl group of component (a) has 0.5-4.0 hydrogen atoms combined with a silicon atom in component (b), and a curing catalyst facilitating additional reaction between the vinyl group of component (a) and a hydroxy 1 group of component (b) is 1-100ppm platinum atom, and also inorganic filler powder (d) having a small content of alkali metal component is 1-50pts.wt. to 100pts.wt. component (a). Consequently, the curing of the composition advances rapidly and the physical properties and heat-resisting properties after the curing are improved, thereby the expected purpose is attained.

9. 发明专利

JPS5419006A TURBOOCHARGERRSUPPLIED ENGINE 失效
公开(公告)号：JPS5419006A
公开(公告)日：1979-02-13
申请号：JP8297977
申请日：1977-07-13
申请人： HITACHI LTD
发明人： YAMADA KOUICHIROU
IPC分类号： F02B75/00 , F02B29/00 , F02B37/00 , F02B37/12 , F02B37/18 , F02B75/10
摘要： PURPOSE:To reduce nitrogen oxide exhausted from an engine by controlling a bypass valve opening depending on temperature of air discharged from a compressor, which is supplied between an inlet and an outlet of a turbine of a turbocharger.

10. 发明专利

JPS54980A MANUFACTURE FOR SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS54980A
公开(公告)日：1979-01-06
申请号：JP6575677
申请日：1977-06-06
申请人： HITACHI LTD
发明人： YAMADA KOUICHIROU , MATSUZAWA MANABU , YAMADA KOUHEI
IPC分类号： H01L29/73 , H01L21/316 , H01L21/331 , H01L29/70
摘要： PURPOSE:To keep a hard current waveform for destruction without weakening the strength of substrate, by coating the final end part of pn junction on the surface of a substrate with glass film.

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