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1. 发明专利

JP2002364374A VARIABLE CAPACITY TURBOSUPERCHARGER 失效
公开(公告)号：JP2002364374A
公开(公告)日：2002-12-18
申请号：JP2001173704
申请日：2001-06-08
申请人： HITACHI LTD , HITACHI CAR ENG CO LTD
发明人： FUKAYA SEIJI , UDAGAWA TETSUO , MURAKAMI YASUNORI , OKAZAKI TSUTOMU
IPC分类号： F02B39/00 , F01D17/16 , F02B37/24
摘要： PROBLEM TO BE SOLVED: To provide a variable capacity turbosupercharger that is efficient without a thick wall at both tips of a nozzle blade. SOLUTION: The variable capacity turbosupercharger, which comprises a variable capacity turbine having a plurality of pivotable nozzle blades arranged in a peripheral region of a turbine wheel rotatable in a casing, has a decelerating means 6 for decelerating a gas leak flow, at a tip clearance formed by a blade tip of the nozzle blade 3 and an opposing wall of the casing 1.

2. 发明专利

JP2002158300A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREOF 失效
公开(公告)号：JP2002158300A
公开(公告)日：2002-05-31
申请号：JP2000353423
申请日：2000-11-20
申请人： HITACHI LTD
发明人： IKEDA YOSHIHIRO , OKAZAKI TSUTOMU , TSUKAMOTO KEISUKE , YANAGIDA HIROSHI , OKADA DAISUKE
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To promote larger capacity of a flush memory as well as micronization of it. SOLUTION: An insulating film protecting the upper part of a control gate electrode 9 comprises a silicon oxide film 15, reducing the stress on the gate oxide film 6 and the substrate 1 below it. An etching protection film 17 comprising a silicon nitride film is formed on the side wall of the silicon oxide film 15, thus the side wall of the silicon oxide film 15 is prevented from being etched in a fluoric acid rinsing process after a gate electrode is worked.

3. 发明专利

JPH08204039A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH08204039A
公开(公告)日：1996-08-09
申请号：JP14846795
申请日：1995-06-15
申请人： HITACHI LTD
发明人： NISHIMOTO TOSHIAKI , YADORI SHOJI , OKAZAKI TSUTOMU , TOBE HIDEO , KOMORI KAZUHIRO , KATO MASATAKA , KUME HITOSHI
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
摘要： PURPOSE: To make the write characteristic and the erase characteristic of a nonvolatile memory element to be mounted on a semiconductor integrated circuit device uniform by a method wherein the dimensional accuracy of the width in the gate length direction of a gate material is increased and the dimensional accuracy of a gate length for a charge storage gate electrode is increased. CONSTITUTION: A silicon film whose impurities are 1×10 [atoms/cm ] or lower is formed on one surface of a first gate insulating film 3, its supper surface is covered with an oxidaiton-resistant mask, and a first gate material 8 is formed. Then, a thermal oxidation insulating film 10 is formed on the surface of an active region in a semiconductor substrate 1 by a thermal oxidation treatment. The mask is removed, a silicon film whose impurity concentration is 1×10 [atoms/cm 9147/28} or higher is then formed on the surface of the oxidation insulating film 10 and the first gate material 8, a second gate material 11 is formed, and a second gate insulating film 13 is formed on it. Thereby, the growth speed of the thermal oxidation insulating film 10 becomes slow, and the dimensional accuracy of the width in the gate length direction of the first gate material 8 and the dimensional accuracy of a gate length for a charge storage gate electrode G1 can be increased.

4. 发明专利

JPS63302134A EXHAUST GAS TURBINE SUPERCHARGER 失效
公开(公告)号：JPS63302134A
公开(公告)日：1988-12-09
申请号：JP13488187
申请日：1987-06-01
申请人： HITACHI LTD
发明人： OKAZAKI TSUTOMU
IPC分类号： F02B37/22 , F02B37/12 , F02B39/00
摘要： PURPOSE:To enhance the effect of supercharger in a low speed range by dividing the inside of a turbine scroll into two scroll chambers with the use of a partition wall, and by extending the inlet part of a turbine impeller in one of nozzle parts formed respectively in these scroll chambers, which is used in a low speed range. CONSTITUTION:A turbine scroll 4 of an exhaust turbine impeller is divided into a two scroll chambers 4a, 4b by a partition wall 5 which also divides a nozzle section into two nozzle parts 6a, 6b. The part 1b of the inlet part of a turbine impeller 1, which faces the scroll chamber 4b, has a shape such that it extends in the nozzle part 6b. Further, the partition wall 5 is connected to a partition plate 8 in a turbine inlet 7, and a control valve 12 is provided in an aperture 11 which is formed in the partition plate 8 so as to communicate between an open scroll 9 and a closed scroll 10. Further, a bypass valve 22 is provided in a bypass aperture 21 formed in a closed scroll 22 downstream of a control valve 12.

5. 发明专利

JPS62111125A VARIABLE CAPACITY TYPE TURBOCHARGER 失效
公开(公告)号：JPS62111125A
公开(公告)日：1987-05-22
申请号：JP24884985
申请日：1985-11-08
申请人： HITACHI LTD
发明人： HOUKIDA ATSUSHI , OKAZAKI TSUTOMU
IPC分类号： F02B37/12
摘要： PURPOSE:To make turbine casing shape simpler than casing with an exhaust bypass valve and a flow passage changeover valve by controlling turbocharging pressure through the control of said changeover valve. CONSTITUTION:When the number of engine revolutions at a maximum turbocharging pressure is taken at 'Np', a flow passage changeover valve 4 is closed and only an exhaust gas or open scroll 6 is made available for a gas flow, provided that the number of engine revolutions 'N' is equal to or less than 'Np'. If 'N' is larger than 'Np' but less than 'Nmax' (maximum number of engine revolutions), said changeover valve 4 is controlled, thereby flowing exhaust gases from the open scroll 6 and a close scroll 5.

6. 发明专利

JPS5420212A LUBRICATING CONTROLLER OF EXHAUST GAS TURBINE SUPERCHARGER 失效
公开(公告)号：JPS5420212A
公开(公告)日：1979-02-15
申请号：JP8505877
申请日：1977-07-18
申请人： HITACHI LTD
发明人： KAWABATA TOSHIAKI , OKAZAKI TSUTOMU
IPC分类号： F02B39/14
摘要： PURPOSE:To use collected energy effectively, reducing the bearing loss especially at the low speed, controlling the lubricating oil flow supplied from the engine lubricating system, detecting load of material to super charge and the number of revolutions.

7. 发明专利

JP2003227344A TURBOCHARGER 审中-公开
公开(公告)号：JP2003227344A
公开(公告)日：2003-08-15
申请号：JP2002177665
申请日：2002-06-18
申请人： HITACHI LTD , HITACHI CAR ENG CO LTD
发明人： FUKAYA SEIJI , UDAGAWA TETSUO , MURAKAMI YASUNORI , HOUKIDA ATSUSHI , OKAZAKI TSUTOMU
IPC分类号： F02B39/00
摘要： PROBLEM TO BE SOLVED: To prevent a phenomenon that a lubricating oil might be leaked from the periphery of a seal ring 8 towards a turbine 6 by causing a swirl flow in the gap between a disc part 6a and a shield plate 9 due to exhaust gas 20 flowing from a turbine casing 1 and rotation of the disc part 6a at the back face of the turbine 6 so as to reduce gas pressure near the seal ring 8. SOLUTION: An annular cavity part 10 released towards the turbine 6 and starting the release inwardly from the outside diameter of the disc part 6a of the turbine 6 is installed on the face of a shield means 9 or a housing 3 opposed to the disc part 6a at the back of the turbine 6. A start end 9a and a terminal end 9c of the cavity part 10 are arranged adjacent to the disc part 6a together. This invention restrains swirl flow caused in the gap between the disc part 6a and the shield plate 9, and reduces pressure grade decreasing towards the inside diameter from the outside diameter in the gap. COPYRIGHT: (C)2003,JPO

8. 发明专利

JP2001289050A VARIABLE CAPACITY TURBO SUPERCHARGER 失效
公开(公告)号：JP2001289050A
公开(公告)日：2001-10-19
申请号：JP13966899
申请日：1999-05-20
申请人： HITACHI LTD , HITACHI CAR ENG CO LTD
发明人： FUKAYA SEIJI , UDAGAWA TETSUO , MURAKAMI YASUNORI , OKAZAKI TSUTOMU
IPC分类号： F02B37/22 , F01D17/16 , F02B37/24
摘要： PROBLEM TO BE SOLVED: To prevent a turbine efficiency from lowering by peeling an exhaust gas flow in the rear of a channel spacer and inside a guide vane to cause fluid energy loss and forming a non-uniform and low mean flow velocity distribution in a turbine rotor inlet position. SOLUTION: A beaked projecting member is arranged in a part of the outer circumference of a columnar channel spacer and the projecting member is projected to the turbine rotor side at a prescribed angle. Or a rod member is arranged in a part of the outer circumference of the channel spacer, and the rod member is adjoined to the turbine rotor side at a prescribed angle.

9. 发明专利

JP2001263083A VARIABLE CAPACITY TURBO CHARGER 失效
公开(公告)号：JP2001263083A
公开(公告)日：2001-09-26
申请号：JP2000081738
申请日：2000-03-17
申请人： HITACHI LTD , HITACHI CAR ENG CO LTD
发明人： FUKAYA SEIJI , UDAGAWA TETSUO , MURAKAMI YASUNORI , OKAZAKI TSUTOMU
IPC分类号： F02B37/24
摘要： PROBLEM TO BE SOLVED: To enhance turbine efficiency by suppressing a fluid energy loss caused by generation of a low flow velocity zone or a separation zone which is formed on the inside diameter side of a guide vane 3 without forming a flow along the guide vane 3 between a flow passage spacer 4 and the guide vane 3 in guide vane 3 opening where a flow passage area is contracted in response to a low gas flow rate. SOLUTION: The purpose of the present invention is achieved by forming the center of curvature O" of a camber line in the vicinity of a front edge L of the guide vane 3 on the outer side compared with the center O' of a rotary shaft of the guide vane 3, or by making a circle formed in the front edge L of the guide vane 3 positioned on the outer side of a circle formed in the gravity center G of the flow passage spacer, using the rotational center of a turbine wheel as a center, in the guide vane 3 opening where the flow passage area is brought into the minimum.

10. 发明专利

JP2000323681A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JP2000323681A
公开(公告)日：2000-11-24
申请号：JP13367699
申请日：1999-05-14
申请人： HITACHI LTD
发明人： IKEDA YOSHIHIRO , TSUCHIYA OSAMU , OKAZAKI TSUTOMU
IPC分类号： H01L27/088 , H01L21/8234 , H01L21/8242 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To obtain a technique for reducing the area of a semiconductor chip without degrading the reliability of a DRAM. SOLUTION: In an n-channel MISFET Qn or a p-channel MISFET Qp in a peripheral circuit, since impurity ion is implanted into a p-type well 4 or an n-type well 5 with a side wall spacer composed of a silicon nitride film 11 and a silicon oxide film 12 as mask and n+-type semiconductor region 9b or a p+-type semiconductor region 10b is formed, an n--type semiconductor region 9a and an n+-type semiconductor region 9b or a p--type semiconductor region 10a and a p+-type semiconductor region 10b having an optimum amount of offset for field reduction can be formed at the ends of source and drain by controlling the thickness of the silicon oxide film 12.

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