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1. 发明专利

JP2003004887A CORROSION POTENTIAL SENSOR, BOILING WATER REACTOR POWER PLANT AND pH SENSOR 审中-公开
标题翻译：腐蚀潜在传感器，锅炉水反应堆发电厂和pH传感器
公开(公告)号：JP2003004887A
公开(公告)日：2003-01-08
申请号：JP2001187955
申请日：2001-06-21
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： WATANABE RYUJI , SAKAI MASANORI , TAKAHASHI TAKUYA , AKAMINE KAZUHIKO
IPC分类号： G21C17/02 , G21D1/00
CPC分类号： Y02E30/40
摘要： PROBLEM TO BE SOLVED: To provide a corrosion potential sensor provided with a structure densely filling a specific amount of oxide powder in a limited space and capable of a long term use and a boiling water reactor power plant.
SOLUTION: The corrosion potential sensor has a sensor box which is made by connecting a cylindrical metal body 5 to the open end of a zirconia cylinder 1 closed at the one end by way of an intermediate metal cylinder 6 for connection and has a structure that metal powder 3 for power collection and metal oxide powder 2 for electrochemical system consisting of a compact are sealed in the zirconia cylinder 1 and a potential detection lead conductor 4 is arranged for short-circuiting the metal powder 3 for power collection to detect the potential by a mineral-insulated cable 7 by way of the lead conductor 4. The packing density of silver oxide rises to 2 to 3.5 times compared with conventional natural packing method, which prevents the zirconia tube inside from silver oxide depletion, maintains oxygen partial pressure constant for a long period and makes to obtain a corrosion potential sensor capable of long term use.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种腐蚀电位传感器，该腐蚀电位传感器具有在有限空间中能够长期使用的特定量的氧化物粉末和沸水反应堆发电厂的结构。解决方案：腐蚀电位传感器具有传感器盒，该传感器盒通过将圆柱形金属体5连接到通过用于连接的中间金属圆筒6在一端封闭的氧化锆气缸1的开口端而制成，并且具有金属用于集电的粉末3和由紧凑件组成的电化学系统的金属氧化物粉末2密封在氧化锆圆筒1中，并且设置潜在的检测引线导体4，用于短路用于集电的金属粉末3以通过矿物绝缘电缆7通过引线导体4.氧化银的填充密度比传统的天然填充方法上升2至3.5倍，这防止氧化锆管内部氧化银消耗，维持氧分压恒定使得获得能够长期使用的腐蚀电位传感器。

2. 发明专利

JPH0923065A THIN FILM MULTILAYERED WIRING BOARD AND ITS MANUFACTURE 失效
公开(公告)号：JPH0923065A
公开(公告)日：1997-01-21
申请号：JP16965695
申请日：1995-07-05
申请人： HITACHI LTD
发明人： WATANABE RYUJI , ITABASHI TAKESHI , MIURA OSAMU , TAKAHASHI AKIO , OGOSHI YUKIO , SUZUKI HITOSHI , SUZUKI MASAHIRO , IMAI TSUTOMU
IPC分类号： H01L21/48 , H01L23/498 , H01L23/538 , H05K3/00 , H05K3/42 , H05K3/46
摘要： PROBLEM TO BE SOLVED: To provide a thin film multilayered wiring board of a viastud connection system which has high density wiring and high signal transmission characteristics. SOLUTION: In a thin film multilayered wiring board having a first and a second metal wiring layers 4 formed by interposing an organic insulating layer, the space between lands of the first and the second metal wiring layers 4 is electrically connected with a viastud 3. The viastud 3 is constituted of a filled member of conductive metal which is formed by nonelectrolytic plating. The difference between the diameter of the upper surface of the viastud and that of the lower surface is smaller than or equal to 10%, or the angle between the taper of the viastud on the insulating layer interface and the viastud axis is smaller than or equal to 5 deg..

3. 发明专利

JPH07115272A MANUFACTURE AND DEVICE FOR THIN FILM MULTILAYER WIRING MOUNTING BOARD 失效
公开(公告)号：JPH07115272A
公开(公告)日：1995-05-02
申请号：JP26205493
申请日：1993-10-20
申请人： HITACHI LTD
发明人： WATANABE RYUJI , MIURA OSAMU , OGOSHI YUKIO
IPC分类号： H05K3/46
摘要： PURPOSE:To bore an insulation layer and a conducting layer on a coaxial line for a connection hole by controlling the concentration of excimer laser beam energy. CONSTITUTION:A wiring pattern is formed on both surfaces of a double-surfaced Cu-clad polyimide wiring sheet where a 18mum thick copper layer is formed on both surfaces of a 25mum thick polyimide sheet based on a photoetching method. (a) A connection hole is partially bored on the sheet between upper and lower wirings by interlaminer boring and chemical copper plating based on excimer laser beam. (b) Polyimide group adhesive-backed sheets are inserted into each of sheet layers and laminated thereon and boned collectively with the applied pressure of 15kg/cm and at a temperature of 250 deg.C by using a press. (c) A thin film multi-layer body which comprises the insulation layer and the conductor layer is bored with excimer laser beams. This construction makes it possible to embody a high reliability thin film multilayer wiring mounted board capable of forming fine connection holes.

4. 发明专利

JPH0551130B2 失效
公开(公告)号：JPH0551130B2
公开(公告)日：1993-07-30
申请号：JP20600287
申请日：1987-08-19
申请人： HITACHI LTD
发明人： WATANABE RYUJI , ANDO HISASHI , SHIMIZU SEIKI , NAKAMURA MITSUO , IWASHITA KYOJI
IPC分类号： H01H33/66 , H01H1/02

5. 发明专利

JPH04291993A METHOD OF JOINING THIN FILM UNIT 失效
公开(公告)号：JPH04291993A
公开(公告)日：1992-10-16
申请号：JP5710791
申请日：1991-03-20
申请人： HITACHI LTD
发明人： MIURA OSAMU , MIYAZAKI KUNIO , WATANABE RYUJI , OGOSHI YUKIO , SATSUU YUUICHI , SHIODA KATSUHIKO , SUZUKI HITOSHI
IPC分类号： H05K3/36 , H01L23/12 , H05K1/00 , H05K1/14 , H05K3/46
摘要： PURPOSE:To form a board even including many thin film wiring layers with the high yield in a short time by heating and bonding electrodes each comprising thin film metal at a temperature lower than the glass transition point of a polyimide resin film. CONSTITUTION:An Au bump 16 is formed on the surface of a connection pad 15 of a thin film unit 14 composed of a Cu wiring 12 and a polyimide insulating film 13 both formed on a tentative board 11. Then, after stamping of a bump 16 there are subjected to thermocompression bonding a ceramic board 20 including a metallized layer 18 and an internal layer wiring 19, and a thin film unit 14. For heating temperature at that time there is selected a temperature lower than a glass transition point of the polyimide insulating film 13, say 280. After the tentative board 11 is etched and removed, a surface layer 21 is formed. Further, an LSI 23 is mounted using a solder bump 22 to yield a predetermined mounting board 24.

6. 发明专利

JPH0458130B2 失效
公开(公告)号：JPH0458130B2
公开(公告)日：1992-09-16
申请号：JP20369986
申请日：1986-09-01
申请人： HITACHI LTD
发明人： KOMURO KATSUHIRO , KURODA TETSUO , NAKAMURA MITSUO , WATANABE RYUJI , KUROSAWA YUKIO
IPC分类号： C22C9/00 , H01B1/02 , H01H1/02 , H01H33/66

7. 发明专利

JPH04127560A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH04127560A
公开(公告)日：1992-04-28
申请号：JP24748890
申请日：1990-09-19
申请人： HITACHI LTD
发明人： SATSUU YUUICHI , MIYAZAKI KUNIO , WATANABE RYUJI , MIURA OSAMU , OGOSHI YUKIO , OTSUKA KANJI , SHIRAI MASAYUKI
IPC分类号： C23C14/02 , H01L23/28
摘要： PURPOSE:To enable organic resin to be improved in adhesion to metal or inorganic material and corrosion resistance by a method wherein a structure to protect is previously subjected to a plasma pre-treatment to be improved in adhesion to organic resin. CONSTITUTION:A modified layer 2 which densely contains hydroxyl groups, oxime groups, amine groups, oxygen, or the like is deposited on the surface of a metal layer 1 through the treatment of chemically reactive groups induced by plasma of N2, O2, H2O, H2, HCOOH, HCHO, NH3, CH3OH, NH2OH, or the like, and an organic resin layer 3 is provided thereon. At this point, the functional groups of the modified layer 2 are densely hydrogen-bonded to the organic material of the resin layer 3. Therefore, the modified layer 2 and the organic resin layer 3 are chemically bonded firmly, whereby a semiconductor device or a circuit device can be improved in adhesive strength, reliability of moisture resistance, and durability.

8. 发明专利

JPH0328365A METAL/ORGANIC HIGH MOLECULAR SYNTHETIC RESIN-CONJUGATED MATERIAL AND ITS PRODUCTION 失效
公开(公告)号：JPH0328365A
公开(公告)日：1991-02-06
申请号：JP5368990
申请日：1990-03-07
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： SATSUU YUUICHI , MIYAZAKI KUNIO , WATANABE RYUJI , MIURA OSAMU , OGOSHI YUKIO , OGAMI MICHIO , FUKUDA TAKUYA , TAKAHASHI SHIGERU , SONOBE TADASHI , MIYAMOTO TOSHIO , TSURU YOSHIYUKI
IPC分类号： B32B15/08 , B32B15/088 , C23C14/02 , C23C14/20 , C23C16/02 , C23C16/06 , C23C16/511
摘要： PURPOSE:To produce the metal/org. high molecular synthetic resin-conjugated material having high adhesive strength by forming a functional group on the surface of an org. high molecular synthetic resin film by an electron cyclotron resonance plasma device and forming a metallic film thereon. CONSTITUTION:The surface of the film of an org. high molecular synthetic resin such as polyimide is exposed to the chemically reactive vapor-phase molecule or vapor-phase ion generated by an electron cyclotron resonance plasma device. The kinetic energy is held at 1-20eV, and the resin exhibiting a high ionization rate at the energy is pref. As a result, a functional group is formed on the surface which is reformed. The thickness of the reformed layer is preferably controlled to = about 200g/cm peel strength and also with high adhesive strength is obtained.

9. 发明专利

JPH01246733A CONTACT FOR VACUUM CIRCUIT BREAKER, MANUFACTURE THEREOF AND VACUUM BREAKER 失效
公开(公告)号：JPH01246733A
公开(公告)日：1989-10-02
申请号：JP7414688
申请日：1988-03-28
申请人： HITACHI LTD
发明人： WATANABE RYUJI , ANDO HISASHI , IWASHITA KIYOJI
IPC分类号： H01H33/66 , H01H1/02
摘要： PURPOSE:To improve fusion and voltage resistivities by forming a contact of a vacuum circuit breaker of intermetallic compound with higher melting point than copper conductive ceramics. CONSTITUTION:A contact of vacuum circuit breaker is formed of an intermetallic compound with higher melting point than copper and conductive ceramics. The amount of ceramics is set in 1-20 percent by weight. As the ceramics, boride of Ti, Zr, Mo or W, carbide, nitride, or silicide are used. As the intermetallic compound, NiAl or Ni3Al is used. As for the manufacture of the contact, there are steps for forming the same by mixing intermetallic compound and conductive ceramics powders, and by performing sintering and degaseous operations. A step is added thereto, which step performs pressure processing such as hot hydrostatic pressure, cold hydrostatic pressure or hot press or the like after at least any one of the processes is over.

10. 发明专利

JPH01117214A ELECTRODE FOR VACUUM CIRCUIT-BREAKER 失效
公开(公告)号：JPH01117214A
公开(公告)日：1989-05-10
申请号：JP27298187
申请日：1987-10-30
申请人： HITACHI LTD
发明人： WATANABE RYUJI , ANDO HISASHI , IWASHITA KIYOJI , KANAMARU NAONOBU
IPC分类号： H01H33/66 , H01H1/02
摘要： PURPOSE:To obtain an electrode with no diffusion and permeation of the Ag solder inside the contact by connecting the electrode in a plastic fluid connection between the contact and an auxiliary electrode each other. CONSTITUTION:Taking an example in case of plastic-connecting a Co-40Ag2Se vacuum-impregnated contact material to an arc auxiliary electrode plate made of Cu, the Co-40Ag2Se contact is made by press-forming a Co powder of -200 to +325 mesh at the pressure about 3ton/cm , and sintering temporarily in H2 at 900 deg.C, and then, Ag2Se is vacuum-impregnated 40% in the pores. The connecting grooves for plastic connecting are cut in the form shown in the figure (a) at both sides of a contact 1, the disk-form contact 1 is loaded on a saucer-form arc auxiliary electrode 2 made of Cu, forming little clearance inside the electrode 2, as a support of the arc auxiliary electrode plate 2, and the auxiliary electrode plate 2 is pressurized locally at the pressure about 85kg/mm in the arrow directions by using a ring-form upper punch 4. As a result, a part of the Cu auxiliary electrode plate 2 generates a plastic fluid in the direction square to the pressure direction, to connect integrally to fill up the connecting grooves of the contact 1.

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