会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明专利
    • Fuel injection valve
    • 燃油喷射阀
    • JP2007182903A
    • 2007-07-19
    • JP2007101958
    • 2007-04-09
    • Hitachi Car Eng Co LtdHitachi Ltd株式会社日立カーエンジニアリング株式会社日立製作所
    • SHIMIZU SHUICHIKAGIYAMA ARATAGUNJI KENICHI
    • F02M61/16F02M51/06F02M57/02F02M69/46
    • Y02T10/32
    • PROBLEM TO BE SOLVED: To provide a fuel injection valve usable over a long period, by improving impact resistance and abrasion resistance of a constituting part of the fuel injection valve. SOLUTION: Low temperature nitriding of 350 to 480°C is applied to a nozzle body 4 having a fuel injection hole 41, a valve guide 17, a valve element 5, a moving piece 6 and a stopper 16. A guide sleeve 14 moving and guiding the moving piece 6 is pressed in the tip inner periphery of a fixed iron core 3, and a hard coating film is applied to the guide sleeve 14 by a highly hard nonmagnetic member. An annular chip-shaped valve guide 17 and a guide presser 18 are superposably arranged in the nozzle body 4. The guide presser 18 is formed of a metallic material of non-nitriding, and the valve guide 17 is fixed by the valve presser 18 by tensionally joining this guide presser 18 to the inner periphery of the nozzle body 4 by being plastically deformed by pressurizing force from above in the nozzle body 4. COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:通过提高燃料喷射阀的构成部件的耐冲击性和耐磨耗性,提供长时间使用的燃料喷射阀。 解决方案:对具有燃料喷射孔41,导阀17,阀元件5,移动件6和止动件16的喷嘴体4施加350至480℃的低温氮化。导向套筒 移动和引导移动件6在固定铁芯3的尖端内周中被按压,并且硬涂膜通过高硬度非磁性部件施加到引导套筒14。 环形片状阀引导件17和引导按压器18可重叠地布置在喷嘴体4中。引导按压器18由非氮化的金属材料形成,并且阀引导件17由阀按压器18固定 通过在喷嘴体4中从上方施加压力而使该引导压脚18张紧地连接到喷嘴体4的内周。(C)2007,JPO&INPIT
    • 3. 发明专利
    • Solenoid fuel injection valve
    • 电磁阀燃油喷射阀
    • JP2006307647A
    • 2006-11-09
    • JP2005127282
    • 2005-04-26
    • Hitachi Ltd株式会社日立製作所
    • TAKAOKU JUNJIISHIKAWA TORUSHIMIZU SHUICHI
    • F02M51/06F02M51/08
    • PROBLEM TO BE SOLVED: To stably operate a moving piece even by fuel pressure higher than conventional pressure. SOLUTION: This solenoid fuel injection valve forms a passage for connecting a space for opposing a collision surface of a fixed core and a movable core and a space existing in a lower part of the moving piece. Actually, a magnetic gap 10G has a plurality of strips of expanded gap parts 10f1 to 10f5 formed in at least any of an outer peripheral surface 10S of the movable core 10 and an inner peripheral surface of a body 13 opposed to this surface and dotted in the peripheral direction. Such a constitution can reduce fluid resistance (also including viscous resistance) of fuel acting between the outer peripheral surface 10S of the movable core 10 and the inner peripheral surface 13F of the body 13 since the fuel can freely move via the expanded gap parts when the moving piece (composed of 5, 9, 10 and 11) moves in the shaft direction, and can provide stable responsiveness without restricting the movement of the moving piece even if the fuel becomes high pressure. COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:即使通过高于常规压力的燃料压力来稳定地操作移动件。 解决方案:该电磁燃料喷射阀形成用于连接用于相对于固定铁芯和可动铁芯的碰撞表面的空间和存在于运动件的下部的空间的通道。 实际上,磁隙10G具有形成在可动铁芯10的外周面10S和本体13的与该表面相对的内周面的至少任一个中的多个扩径间隙部分10f1〜10f5, 周边方向。 这样的结构可以降低在可动铁心10的外周面10S与主体13的内周面13F之间作用的燃料的流体阻力(也包括粘性阻力),因为当燃料可以通过膨胀的间隙部分自由移动时 移动件(由5,9,10和11组成)在轴向移动,并且即使燃料变得高压也能够不限制移动件的运动而提供稳定的响应性。 版权所有(C)2007,JPO&INPIT
    • 4. 发明专利
    • GALLIUM ARSENIDE SEMICONDUCTOR DEVICE
    • JPH0845966A
    • 1996-02-16
    • JP18683295
    • 1995-07-24
    • HITACHI LTD
    • SHIMIZU SHUICHIKANBAYASHI KAZUO
    • H01L29/872H01L21/338H01L29/47H01L29/80H01L29/812
    • PURPOSE:To obtain an electrode arrangement pattern where a short circuit is prevented from occurring between electrodes by a method wherein the direction of approach of an electrode adjacent to an active layer is so set to conform to or to be nearly equal to a crystal orientation in which the alloy of the electrode and the active layer is slow in a growth rate. CONSTITUTION:In electrode material of (100), adjacent electrodes are set to a crystal orientation of [011] or a crystal direction equivalent to [011] in which alloy is very small in growth rate or set to a crystal orientation of [011] or a crystal direction equivalent to [011] in which alloy is nearly zero in growth rate. After the electrodes are formed, even if they are subjected to a passivation process which is carried out at temperatures above a eutectic temperature of Au and Ge, the adjacent electrodes are kept free from a short circuit and prevented from deteriorating in dielectric strength. By this setup, a gallium arsenide semiconductor device of this constitution can be prevented from deteriorating in characteristics due to the growth of alloy induced by a thermal treatment.
    • 6. 发明专利
    • DEVICE FOR DIAGNOSING AIR CONDITIONER FOR AUTOMOBILE
    • JPH02216312A
    • 1990-08-29
    • JP3619089
    • 1989-02-17
    • HITACHI LTDHITACHI AUTOMOTIVE ENG
    • SHIMIZU SHUICHIKANEHATA YASUO
    • B60H1/00
    • PURPOSE:To facilitate an operation check by transmitting a forced substitute data at a defined period to a control device from an external device and returning to an original operated control target value when the forced substitute data fails to be transmitted during a time longer than the transmitting period. CONSTITUTION:At the time of carrying out the operation check of the output device of an air conditioner from an external device 19 via a removable communication line 20, a forced substitute data which is an operation target value is transmitted to a microcomputer 1 from an external device 19 at a defined period X. The forced substitute data is forcedly written into a memory 4 and fixed as an inside data to carry out the operation check of a blower control device 13, a motor-driven actuator 15, and the like, a hot water valve 15, and a compressor 17, etc. If the transmission of data fails to be recognized even when a time T longer than the transmission period X elapsed from the point of time of the transmission of the forced substitute data, the forced substitute condition of the inside data of the memory 4 is removed, to return the inside data of a control target value operated by a CPU 3.
    • 7. 发明专利
    • SEMICONDUCTOR ELEMENT
    • JPS63293983A
    • 1988-11-30
    • JP12827587
    • 1987-05-27
    • HITACHI LTD
    • MIYASHITA ISAOSHIMIZU SHUICHI
    • H01L29/78H01L21/338H01L21/8234H01L27/08H01L27/088H01L29/41H01L29/80H01L29/812
    • PURPOSE:To obtain a field-effect transistor having high electrostatic breakdown strength by extremely windening a space between the end of a source electrode near a feeding point for a gate and a gate electrode, gradually bringing both electrodes near toward the direction of extension of the source electrode and forming subsequent both electrode sections at a regular interval when the space is brought to a specified value. CONSTITUTION:A space between a gate electrode 8 and the nose section of a source electrode 5 on the side near to a feeding point 10 for a gate in the gate electrode 8 is made wider than a constant space S among the gate electrode 8 and other source electrode 5 sections. That is, the space between the nose of the source electrode 5 and the gate electrode 8 is most widened as W=1.5S. The space is narrowed gradually in the direction of extension of the source electrode 5 linearly up to S. According to such an electrode pattern, even when steep abnormal voltage in an extent that electrostatic breakdown is not generated works between the source electrode 5 and the gate electrode 8 in the sections of the source electrode 5 and the gate electrode 8 extending at the constant space S, the space between the gate electrode 8 and the source electrode 5 is widened, thus generating no electrostatic breakdown.
    • 8. 发明专利
    • MANUFACTURE OF COMPOUND SEMICONDUCTOR DEVICE
    • JPS63293915A
    • 1988-11-30
    • JP12826887
    • 1987-05-27
    • HITACHI LTD
    • YANAGI YOSHIKAZUSHIMIZU SHUICHI
    • H01L21/265H01L21/78
    • PURPOSE:To form a steep carrier profile by a method wherein a void is produced by implanting atoms consisting a semiinsulating substrate into a main surface layer part of the semiinsulating substrate, a conductivity type deciding impurity is implanted into this region and, after that, an active region is formed by an annealing process at a low temperature. CONSTITUTION:In a chip 1 the following are formed on a main face of a semiinsulating GaAs substrate 5 by an ion implantation operation: an n type source region 6; a drain region 7; an n-type channel layer (an active layer) 8 which is extended between the source region 6 and the drain region 7. A source electrode 2, a drain electrode 3 and a gate electrode 4 are formed on these regions. Ga is implanted into an active region composed of said source region 6, said drain region 7 and said channel layer 8 prior to an ion implantation operation and an annealing operation; a void-producing region 9 having a number of voids (holes) inside a crystal is formed; the annealing operation is executed at a low temperature of 600-700 deg.C. As a result, the channel layer 8 displays a steep carrier profile.
    • 9. 发明专利
    • CLOUDINESS PREVENTING DEVICE FOR AUTOMOBILE
    • JPS6390424A
    • 1988-04-21
    • JP23455086
    • 1986-10-03
    • HITACHI LTDHITACHI AUTOMOTIVE ENG
    • OTSU HIDEKAZUOKADA TSUGUHIROSHIMIZU SHUICHI
    • B60H1/00B60H3/00B60H3/02
    • PURPOSE:To improve a cloudiness preventing effect at the time of accelerating by providing a means of detecting the acceleration of an automobile and increasing the capacity of a dewing preventing means in accordance with the detected acceleration. CONSTITUTION:An inside air temp. TR detected by an automobile room inside air temp. sensor 1 and an inside air humidity detected by a sensor 2 are sent to a humid air chart converting part 4 to obtain a dew-point temp. TD, and the difference DELTATW between the dew-point temp. TD and a glass inner-face temp. TW is obtained by a subtraction pat 6. On the other hand, the difference DELTATR between the temp. TR and an outside air temp. TA detected by a sensor 7 is obtained, and the product of acceleration detected by a sensor 9 and the temp. difference DELTATR is calculated by a multiplication part 10 to obtain a correcting quantity alpha. And, a cloudiness preventing means 12 is controlled based on this value alpha and said value DELTATW and, when reduction in glass temp. due to acceleration is foreseen, the control of cloudiness prevention is enhanced. Thereby, the cloudiness prevention control can be carried out earlier, securing a favorable visibility.