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1. 发明专利

JPH10163178A METHOD OF REMOVING RESIST 失效
公开(公告)号：JPH10163178A
公开(公告)日：1998-06-19
申请号：JP32506096
申请日：1996-12-05
申请人： HITACHI LTD
发明人： KOIZUMI KOTARO , TSUNEKAWA SUKEYOSHI , KAWASAKI HIROMICHI , NOJIRI KAZUO , SASABE SHUNJI
IPC分类号： G03F7/42 , H01L21/027 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To remove the ashing residuum of resist exposed to dry etching by controlling the oxidative reaction by the action of ozone and ozone and ultraviolet rays. SOLUTION: A semiconductor substrate 1 is put on a stage 3 within a treatment chamber 2. A heater 4 for heating is built in the stage 3, and the surface temperature of the stage 32 is controlled by a thermocouple 5 and a temperature adjuster 6. A quartz board 8 is installed opposite to the stage 3, and a nozzle 9 for ozone supply is attached to the quart board 8. There is an ultraviolet ray lamp 10 on the quart board 8, and the ultraviolet rays can be applied optionally to the semiconductor substrate 1. For the ultraviolet ray lamp 10, a low- pressure mercury lamp is used. The ozone is is produced and supplied, with oxygen gas as material, by an ozone generator 11. The quantity of generated ozone is measured by an ozone densitometer 12, and the signal is feedback to an ozone generator 11.

2. 发明专利

JPH0714830A FORMATION OF THIN FILM AND THIN FILM FORMING DEVICE 失效
公开(公告)号：JPH0714830A
公开(公告)日：1995-01-17
申请号：JP15072893
申请日：1993-06-22
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： KOGA KAZUHIRO , SASABE SHUNJI
IPC分类号： H01L21/205 , H01L21/316
摘要： PURPOSE:To provide a method of forming a thin film, which is capable of forming the film having the superior uniformity of a film thickness at a high throughput without causing an increase in the size of a thin film forming device and moreover, is capable of contriving the improvement of the yield of a semiconductor wafer formed into a filmy form, and the thin film forming device. CONSTITUTION:A thin film forming device 1 compriring a rotating cylindrical body 10 which serves as a substrate electrode, a motor 20 which rotatingly drives the body 10, a sensor 30 for detecting the amount of rotation of the body 10, and a control device 40 for conrolling the driving of the motor 20, is used. The rotation of the motor 20 is controlled by the device 40 in such a way that when a boundary line 15 on the side surface of the body 10 forwardly faces the center of a target 50, the rotation of the body 10 is once stopped or when the line 15 passes through a position to forwardly face the center, the speed of rotation of the body 10 is once decreased. Thereby, the uniformity of the film thickness of a film in the direction of rotation of the body 10 is improved and the device 1 in miniatuized and made to incease throughput.

3. 发明专利

JPH06124896A METHOD AND APPARATUS FOR SURFACE TREATMENT UTILIZING MOLECULAR BEAM SCATTERING 失效
公开(公告)号：JPH06124896A
公开(公告)日：1994-05-06
申请号：JP27399092
申请日：1992-10-13
申请人： HITACHI LTD
发明人： MISE NOBUYUKI , USUI TAKETO , SASABE SHUNJI
IPC分类号： H01L21/205
摘要： PURPOSE:To form uniform film on a substrate by applying a molecular beam to a scattering plate and making only scattered molecules reach the substrate. CONSTITUTION:A scattering plate 8 and a substrate 3 where a material is to be formed are placed in a vacuum vessel 1 maintained at a low pressure. The substrate and the scattering plate 8 can be independently adjusted in position, angle and temperature. In addition, a molecular beam source 5 is fixed to an outer wall of the vacuum vessel 1 and forms a molecular beam 7 from a desired material. The substrate 3 is placed so that the molecular beam 7 may not be directly applied to it, while the scattering plate 8 is placed so that the applied molecular beam 7 is scattered and only molecules after the scattering reach the substrate 3.

4. 发明专利

JPH02106968A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND FORMING METHOD THEREOF 失效
公开(公告)号：JPH02106968A
公开(公告)日：1990-04-19
申请号：JP26103588
申请日：1988-10-17
申请人： HITACHI LTD
发明人： OWADA NOBUO , AKIMORI HIROYUKI , NITTA TAKEHISA , KOBAYASHI TORU , SASABE SHUNJI , KAWAJI MOTONORI , KASAHARA OSAMU
IPC分类号： H01L21/3205 , H01L21/82 , H01L23/52 , H01L27/118
摘要： PURPOSE:To improve the mounting efficiency of a circuit while reducing memory capacitance by making the wiring pitch of a third layer wiring substantially the same as or smaller than that of a first layer wiring. CONSTITUTION:In a logic LSI having multilayer interconnection structure formed by an automatic wiring arrangement system, first layer signal wirings 38 having multilayer interconnection structure and third layer signal wirings 44 are extended in the X direction and second layer signal wirings 41 in the Y direction respectively, and the wiring pitch P3 of the third layer signal wirings 44 is made substantially the same as or smaller than that P1 of the first layer signal wirings 38. According to the constitution, the number of the signal wirings of the third layer signal wirings 44 is increased, and the number of the signal wirings of the first layer signal wirings 38, the third layer signal wirings 44 and the second layer signal wirings 41 can be equalized, thus improving the degree of freedom of the arrangement of the signal wirings in the automatic wiring arrangement system, then enhancing the mounting efficiency of a logic circuit.

5. 发明专利

JPH0582405A MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPH0582405A
公开(公告)日：1993-04-02
申请号：JP23820891
申请日：1991-09-18
申请人： HITACHI LTD
发明人： TANIDA KEIJI , SASABE SHUNJI , AKIMORI HIROYUKI , SATO OSAMU
IPC分类号： H01L21/02 , H01L21/3205 , H01L23/52
摘要： PURPOSE:To provide the manufacturing method of a semiconductor integrated circuit device by which the revealing of Al wiring can be eliminated and the reliability of a device can be improved by forming the device in such a way that the original warping directionality of substrates is restricted and substrates which are warped in such a way that their main surface sides are one the convex are selected. CONSTITUTION:At the time of forming a device on the main surface an Si semiconductor substrate 1, a substrate 1 which is warped in such a way that its main surface side is on the convex is selected. As a result, the convex state of the main surface car be maintained even when an interlayer insulating film 3 is formed and heat-treated after an Al wiring 2 is formed.

6. 发明专利

JPH0382760A SUBSTRATE ELECTRODE FOR RF BIAS SPUTTERING 失效
公开(公告)号：JPH0382760A
公开(公告)日：1991-04-08
申请号：JP21738789
申请日：1989-08-25
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： KOGA KAZUHIRO , SASABE SHUNJI
IPC分类号： C23C14/40 , H01L21/31
摘要： PURPOSE:To uniformize the surface potential of a wafer and to reduce the change of the capacitance in the exchange of insulator plates by interposing a conductive and adhesive material between a metallic electrode and the cover member, insulator plate. CONSTITUTION:A conductive material 5 with the capacitance in the gap neglected is interposed between the quartz plate 2 at the insulator plate, electrode cover glass 3 as the cover member and the metallic electrode 4. A material capable of being firmly attached to the quartz plate 2, electrode cover glass 3 and electrode 4, forming no gap on the contact surface and forming no capacitance on the electrode 4 is used as the conductive material 5. The variance between the materials to be treated is reduced by the substrate electrode for RF bias sputtering, and the thickness of the film formed on the material is uniformized.

7. 发明专利

JPH02173268A METHOD AND DEVICE FOR FORMING THIN FILM 失效
公开(公告)号：JPH02173268A
公开(公告)日：1990-07-04
申请号：JP32637488
申请日：1988-12-26
申请人： HITACHI LTD
发明人： SUZUKI YASUMICHI , SAITO YUTAKA , SASABE SHUNJI , NAKAJIMA KAZUHIRO
IPC分类号： C23C16/44 , C23C16/455 , C23C16/50 , C23C16/511 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To decrease the stresses of a thin film and to stably form the film having excellent quality by heating only the surface of a substrate at the time of forming the thin film on the substrate by a CVD method utilizing electron cyclotron resonance. CONSTITUTION:O2, etc., as a gas 13 for oxidation, gaseous SiH4 as a gaseous raw material 15, and gaseous Ar as a gas 14 for heating are first supplied into a vacuum vessel 2 consisting of a plasma generating chamber 3 and a reaction chamber 4 at the time of imposing the substrate 18, which is a material to be treated, in the vacuum vessel 2 and forming the thin film of SiO2 on the surface thereof by the CVD method. The microwaves from a microwave generating source 7 are then fed into a cavity 8 and plasma 12 is generated by adjusting the positions of a matching means 9 and a conductor rod 10 and setting the inside of the cavity 8 at the cavity resonance conditions of the microwaves. The gaseous O2 is excited and activated by this plasma and is joined with the gaseous SiH4 on the surface of the substrate 18 heated by the gaseous Ar 14 to form the thin film of the SiO2 by the reaction of the O2 and the SiH4 on the surface of the substrate 18 with the low stress and the high sensitivity.

8. 发明专利

JPS6299461A THIN FILM FORMING DEVICE 失效
公开(公告)号：JPS6299461A
公开(公告)日：1987-05-08
申请号：JP23725885
申请日：1985-10-25
申请人： HITACHI LTD
发明人： HONMA YOSHIO , TSUNEKAWA SUKEYOSHI , SASABE SHUNJI
IPC分类号： C23C14/34 , C23C14/04 , H01J37/34 , H01L21/203 , H01L21/285 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To provide a thin film forming device which can form a thin film at the lower resputtering rate and is remarkably improved in the uniformity of the deposited film thickness by providing a grid-shaped intermediate electrode having a relatively large aspect ratio between a cathode and substrate electrode. CONSTITUTION:The grid-shaped intermediate electrode 15 having plural pieces of holes 15a is provided in addition to the cathode 11, the substrate electrode 12, a target 13 and a shutter 14 is vacuum vessel 10. The electrode 15 has an effect of improving the instability of the potential of plasma. At least part of the electrode 15 is constituted of a soft magnetic material, as necessary by which the effect of the leakage magnetic field from the cathode is decreased. The aspect ratio of the grid of the electrode 15 is made >=0.1, by which the coating shape of the deposited film is improved. The flattening of the deposited film at 120% resputtering ratio lower than conventional practice is made possible, by which the good result is obtd. at 20-70% resputtering rate.

9. 发明专利

JP2515731B2 失效
公开(公告)号：JP2515731B2
公开(公告)日：1996-07-10
申请号：JP23725885
申请日：1985-10-25
申请人： HITACHI LTD
发明人： HONMA YOSHIO , TSUNEKAWA SUKEYOSHI , SASABE SHUNJI
IPC分类号： C23C14/34 , C23C14/04 , H01J37/34 , H01L21/203 , H01L21/285 , H01L21/302 , H01L21/3065

10. 发明专利

JPH0714769A SEMICONDUCTOR PRODUCTION DEVICE 失效
公开(公告)号：JPH0714769A
公开(公告)日：1995-01-17
申请号：JP15072993
申请日：1993-06-22
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： KOGA KAZUHIRO , SASABE SHUNJI
IPC分类号： H01L21/205
摘要： PURPOSE:To allow stabilization of discharge by preventing frequency interference in the high frequency electric field being applied. CONSTITUTION:The frequencies f1, f2, f3, f4, f5 of high frequency voltages to be applied to five electrodes T1, T2, T3, T4, T5 are set, respectively, at 13.550, 13.553, 13.565, 13.574, 13.560MHz. In this regard, the primary frequency difference, i.e., the mutual difference of the frequencies f1, f2, f3, f4, f5, is set at 200Hz or above. The secondary frequency difference, i.e., the mutual difference of the primary frequency difference is also set at 200Hz or above. Since the beat is restrained, the discharge in the chamber is stabilized and the frequency interference can be prevented easily. Furthermore, power can be increased and the throughput can be enhanced.

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