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1. 发明专利

JP2003078029A Semiconductor integrated circuit device and manufacturing method therefor 审中-公开
标题翻译：半导体集成电路器件及其制造方法
公开(公告)号：JP2003078029A
公开(公告)日：2003-03-14
申请号：JP2001263734
申请日：2001-08-31
申请人： Hitachi Ltd , Nec Corp , 日本電気株式会社 , 株式会社日立製作所
发明人： IIJIMA SHINPEI , SAKUMA HIROSHI
IPC分类号： H01L21/8242 , H01L21/02 , H01L21/285 , H01L27/108
CPC分类号： H01L28/60 , H01L21/28518 , H01L27/10814 , H01L28/55 , H01L28/91
摘要： PROBLEM TO BE SOLVED: To prevent defects that oxygen through a lower electrode oxidizes the surface of a silicon plug at a lower layer, and that the oxide layer of high resistance is formed when a dielectric film formed on the lower electrode of a capacitive element in DRAM is thermally treated in an oxygen atmosphere.
SOLUTION: Since a polycrystalline silicon film 28 is formed along the inner wall of a groove 27 where the capacitive element is formed and the polycrystalline silicon film 28 is brought into contact with the lower electrode 29 in the whole inner wall of the groove 27, oxygen intruding into the lower electrode 29 at the time of heat treating a tantalum oxide film 32 is consumed in the interface of the polycrystalline silicon film 28 and the lower electrode 29, and it is prevented from reaching the surface of a plug 22.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：为了防止通过下部电极的氧氧化下层的硅插塞的表面的缺陷，并且当形成在电容元件的下部电极上的电介质膜时，形成高电阻的氧化物层在氧气氛中对DRAM进行热处理。解决方案：由于沿形成电容元件的凹槽27的内壁形成多晶硅膜28，并且多孔硅膜28在凹槽27的整个内壁中与下电极29接触，因此氧气在多晶硅膜28和下电极29的界面中消耗氧化钽膜32的热处理时侵入下电极29，并且防止其到达插塞22的表面。

2. 发明专利

JPH09246495A SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE 失效
公开(公告)号：JPH09246495A
公开(公告)日：1997-09-19
申请号：JP8086796
申请日：1996-03-08
申请人： TEXAS INSTRUMENTS JAPAN , HITACHI LTD
发明人： KUROSAKA YOSHIYUKI , SAKUMA HIROSHI
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8242 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To realize the increase of the dimension of an electrode area with the roughing treatment of a capacitor electrode by attaching conductive material in microscopic irregularity form on a first electrode that is electrically connected to a source region. SOLUTION: An SiO2 layer 9, an Si3 N4 layer 8 and an SiO2 layer 7 are etched in sequence forming a photoresist on the surface of a silicon substrate 1. A phosphorus doped silicon layer 11 is deposited so that it is connected to a source region 3. A patterning is performed by etching the silicon layer 11 forming a photoresist mask on a capacitor region. A substrate is etched in sequence with the mask of the photoresist film. After removing the photoresist film, an upper stage fin part is formed and a silicon layer 35 that is for joining to a lower stage fin part is deposited on all surface of the lower fin part. Silicon deposition 20 is deposited on the surface of the silicon layer 35 with microscopic irregularity uniformly. Therefore, The dimension of the electrode area is increased and miniaturization can be attained sufficiently.

3. 发明专利

JPH06140572A FORMATION OF CAPACITIVE INSULATING FILM 失效
公开(公告)号：JPH06140572A
公开(公告)日：1994-05-20
申请号：JP29098392
申请日：1992-10-29
申请人： HITACHI LTD
发明人： KASAHARA OSAMU , SAKUMA HIROSHI , TSUCHIYA OSAMU , SUGIURA JUN
IPC分类号： H01L21/205 , H01L21/318 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/10 , H01L27/108
摘要： PURPOSE:To provide a silicon nitride film having a film thickness with sufficient charge storage capacity, by changing a gas to an SiH3Cl2 gas halfway after an NH3 gas is supplied at first under lowering pressure in an initial kernel forming process, and also changing the gas halfway to the SiH3Cl2 gas after the NH3 gas is supplied under given pressure in a film growth process. CONSTITUTION:A growing process of a natural oxide film 11 over a lower electrode 2 is controlled by using a CVD system with a load lock mechanism so that a natural oxide film 11 can be made thin. In addition, an initial kernel forming process and a film growth process are carried out, in which a silicon nitride film 10 and a silicon nitride oxide film 11 obtained by oxidizing the silicon nitride film 10 are formed with their film thicknesses enough to hold a sufficient charge storage capacity. Then, a capacitive insulating film 1 thicker than a conventional one can be obtained. In this initial kernel forming process, the silicon nitride film 10 is grown on the silicon oxide at a rate nearly equal to that of the growth on the silicon. Consequently, a silicon nitride film 10 with sufficient film thickness, along with good acid-proof characteristics, can be obtained even on the silicon nitride film.

4. 发明专利

JPS6060594A NUCLEAR USED-FUEL CONTAINING TREATING INSTRUMENT 失效
公开(公告)号：JPS6060594A
公开(公告)日：1985-04-08
申请号：JP16820683
申请日：1983-09-14
申请人： HITACHI LTD
发明人： SAKUMA HIROSHI , ENOKIDA YOSHIKATSU
IPC分类号： G21C19/07 , G21C19/06

5. 发明专利

JP2003224203A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS FABRICATING METHOD 审中-公开
公开(公告)号：JP2003224203A
公开(公告)日：2003-08-08
申请号：JP2002019159
申请日：2002-01-28
申请人： HITACHI LTD , NEC CORP , NEC ELECTRONICS CORP
发明人： NAKAMURA YOSHITAKA , ASANO ISAMU , IIJIMA SHINPEI , HIRATANI MASAHIKO , SAKUMA HIROSHI
IPC分类号： H01L21/02 , H01L21/314 , H01L21/316 , H01L21/8242 , H01L21/8246 , H01L27/108 , H01L27/115
摘要： PROBLEM TO BE SOLVED: To enhance the characteristics of a semiconductor integrated circuit device by reducing the leak current of a capacitor element employed in a DRAM memory cell, or the like. SOLUTION: A capacitor element C for storing information connected with an MISFET Qs for transferring information in a memory cell forming region through plugs 20 and 39 is fabricated by forming a lower electrode 43a of an Ru film in the hole 42 of a silicon oxide film 41, depositing a tantalum oxide film on the lower electrode 43a and subjecting it to first heat treatment in an oxidizing atmosphere at a temperature high enough to repair oxygen defects but having no effect on the material underlying the tantalum oxide film, and to second heat treatment in an inert atmosphere at a temperature (not higher than 650°C) not crystallizing the tantalum oxide completely but higher than the temperature of subsequent process, and then forming an upper electrode 4c of a multilayer film of an Ru film and a W film on a capacitor insulation film 44b of the tantalum oxide. COPYRIGHT: (C)2003,JPO

6. 发明专利

JP2002231656A METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JP2002231656A
公开(公告)日：2002-08-16
申请号：JP2001024389
申请日：2001-01-31
申请人： HITACHI LTD
发明人： SHIMAMOTO YASUHIRO , HIRATANI MASAHIKO , MATSUI YUICHI , YAMAMOTO TOMOSHI , NAMATAME TOSHIHIDE , ANDO TOSHIO , SAKUMA HIROSHI , IIJIMA SHINPEI
IPC分类号： C23C16/18 , H01L21/02 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L21/8242 , H01L23/52 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To form an Ru electrode which has low oxygen content and high thermal stability by a CVD method. SOLUTION: A method for manufacturing a semiconductor integrated circuit device comprises the steps of introducing oxidative gas only at a raw material introducing time, in a chemical vapor phase growing method adopting an organic ruthenium compound as a raw material, and reacting under low oxygen partial pressure condition. Thus, a ruthenium film having a small oxygen content can be formed. The method further comprises the step of heat treating the film at a forming temperature or higher after the ruthenium film is formed to form the ruthenium film having high thermal stability.

7. 发明专利

JPH1174354A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH1174354A
公开(公告)日：1999-03-16
申请号：JP17726798
申请日：1998-06-24
申请人： HITACHI LTD
发明人： TAMARU TAKESHI , NAKAMURA YOSHITAKA , GOSHIMA HIDEKAZU , ASANO ISAMU , TANAKA KATSUHIKO , FUKUDA NAOKI , AOKI HIDEO , SAKUMA HIROSHI , KAWAKITA KEIZO , YAMADA SATORU , HIRASAWA MASANARI
IPC分类号： H01L21/28 , H01L21/768 , H01L21/8242 , H01L21/8246 , H01L23/522 , H01L27/105 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To prevent an Al wiring, which is formed on the upper part of a through hole filled with a CVD(Chemical Vapor Deposition)-TiN (Titanium Nitride) film, from being corroded. SOLUTION: A TiN film 71 and a W film 72 are deposited on the upper part of a silicon oxide film 64 being included in the interior of a through hole 66 by a CVD method, thereafter the films 72 and 71 on the upper part of the film 64 are etched back to leave the films 72 and 71 only in the interior of the hole 66, and a plug 73 is formed. Then, after a TiN film 74, an Al alloy film 75 and a Ti film 76 are deposited on the upper part of the film 64 including the surface of the plug 73 by a sputtering method, the films 76, 75 and 74 are patterned to form second layer wirings 77 and 78.

8. 发明专利

JPS55131711A SOLID OBJECT DEFORMATION MEASURING METHOD 失效
公开(公告)号：JPS55131711A
公开(公告)日：1980-10-13
申请号：JP3840979
申请日：1979-04-02
申请人： HITACHI LTD
发明人： WATANABE SHINOBU , FUJISHIMA SUSUMU , UMEHARA NOBORU , UCHIDA MASAHIRO , SAKUMA HIROSHI
IPC分类号： G01B21/20 , G01B21/32
摘要： PURPOSE:To distinguish the deformaion of an object to be measured from the reference axis clearly and to grasp the quantity of deformation exactly by measuring the position of an arbitrary section of the object, by measuring a model in the same way as the object to be measured and by comparing both the results with each other. CONSTITUTION:The quantity of deformation of a solid object such as a turbine blade is measured and calculated. The positions of both ends of an arbitrary section of the object to be measured are measured, these measured values are plotted on a coordinates system to obtain the coordinate values C (XA1, YA1) and D (XA2, YA2), a model is also measured in the same way as the object to be measured to obtain the reference coordinate values A (XM1, YM1) and B (XM2, YM2), the coordinate values of both the object and model are compared with each other, the quantity of inclination of the object with respect to the reference axis and the quantity of deformation of the object in the direction of X-axis and Y-axis are obtained.

9. 发明专利

JP2002270794A METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED- CIRCUIT DEVICE 失效
公开(公告)号：JP2002270794A
公开(公告)日：2002-09-20
申请号：JP2001062909
申请日：2001-03-07
申请人： HITACHI LTD , NEC CORP
发明人： IIJIMA SHINPEI , SAKUMA HIROSHI , HIRATANI MASAHIKO
IPC分类号： H01L21/8242 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To prevent the nonconformity that oxygen which has permeated a lower electrode oxidizes a barrier layer and forms a high-resistance layer when a dielectric film on the lower electrode of the capacitance element of a DRAM, is heat-treated in an oxygen atmosphere. SOLUTION: The lower electrode 31 which is composed of a TaN film, and an Ru film deposited on its upper part is constituted at the inside of a groove 27 formed on a silicon oxide film 24. In succession, a tantalum oxide film 32a is deposited on the upper part of the lower electrode 31 by CVD method. After that, in order to crystallize the film 32a and to improve its film quality, it is heat-treated at 300 to 400 deg.C in an oxygen-containing atmosphere. Thereby, the nonconformity of a high-resistance oxide layer being formed between a plug 22 composed of polycrystalline silicon and the lower electrode 31 is prevented.

10. 发明专利

JP2001102444A MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JP2001102444A
公开(公告)日：2001-04-13
申请号：JP27529799
申请日：1999-09-28
申请人： HITACHI LTD
发明人： GOSHIMA HIDEKAZU , TAMARU TAKESHI , FUKUDA NAOKI , SAKUMA HIROSHI , NAKAMURA YOSHITAKA , FUKUDA TAKUYA
IPC分类号： H01L21/768 , H01L21/28 , H01L21/285 , H01L21/8242 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To prevent an insulating film from being formed on an interface between bit lines, a wiring and an Si substrate. SOLUTION: A Ti film 101 is formed on a silicon oxide film 31 and inside a connection hole 34 through a sputtering method, and then a silicide layer 42 is formed through a thermal treatment. Then, a TiN film 102 is formed on the Ti film 101, and successively, a TiN film 103 is formed thereon through an inorganic CVD method where a mixed gas of titanium tetrachloride and ammonia is used. Then, an after treatment is carried out making NH3 gas or NH3 gas and carrier gas (helium; He) flow, and successively, a pure water treatment is carried out through a sheet-type cleaning device, by which Cl is removed from the above TiN film 103.

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