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2. 发明专利

JPS5567596A SINGLE CRYSTAL GROWING METHOD 失效
公开(公告)号：JPS5567596A
公开(公告)日：1980-05-21
申请号：JP13787578
申请日：1978-11-10
申请人： HITACHI LTD
发明人： KOBAYASHI TOSHIO , OOI TETSU
IPC分类号： C30B13/00 , C30B13/18 , C30B13/20
摘要： PURPOSE:To grow a single crystal of an about uniform diameter by setting raw material and a seed crystal at both ends of a susceptor heated to a temp. above the m.p. of the raw material by high frequency induction heating; contacting the raw material melted to the seed crystal through the susceptor; and moving the crystal under specified conditions. CONSTITUTION:Sintered raw material rod 21 such as Mn-Zn ferrite and seed crystal 22 are set at both ends of susceptor 23 having central openings 27, and rod 21 and crystal 22 are vertically movably connected to driving mechanisms relatively to susceptor 23. Susceptor 23 is heated to a temp. above the m.p.of rod 21 with high frequency coil 24 to melt rod 21, and melt 26 is contacted to crystal 22 through openings 27. Crystal 22 is then moved downward at a predetermined speed, and simultaneously rod 21 is supplied to one end of susceptor 23 at a predetermined speed. By this method the crystal diameter can be controlled, and by selecting the form of susceptor 23 a single crystal of an arbitrary section is grown.

3. 发明专利

JPS5356984A HALL ELEMENT 失效
公开(公告)号：JPS5356984A
公开(公告)日：1978-05-23
申请号：JP13048476
申请日：1976-11-01
申请人： HITACHI LTD
发明人： OOI TETSU , SHIGETA JIYUNJI , NAKASHIMA MUNEYASU
IPC分类号： H01L43/06
摘要： PURPOSE:To increase the SN ratio of a thin film Hall element by defining the element width near Hall voltage lead-out part and the spacing between current terminals.

5. 发明专利

JPS52119916A HALL EFFECT MAGNETIC HEAD 失效
公开(公告)号：JPS52119916A
公开(公告)日：1977-10-07
申请号：JP3601176
申请日：1976-04-02
申请人： HITACHI LTD
发明人： OOI TETSU , NAKAJIMA MUNEYASU , SHIGETA JIYUNJI , KONISHI SADAO
IPC分类号： G11B5/37
摘要： PURPOSE:The structure of a front gap type Hall head is improved and the insufficiency of its frequency characteristics is made up by disposing a Hall element that the gaplength is smaller than 2 mum through the specific insulating film provided in the recessed groove provided in one direction of a magnetic core.

6. 发明专利

JPS52110569A MANUFACTURE OF INSB THIN FILM 失效
公开(公告)号：JPS52110569A
公开(公告)日：1977-09-16
申请号：JP2713576
申请日：1976-03-15
申请人： HITACHI LTD
发明人： KODERA NOBUO , MIYAMOTO NOBUO , OOI TETSU
IPC分类号： H01L43/14 , H01L21/203 , H01L43/06 , H01L43/12
摘要： PURPOSE:To provide a technical means to be able to produce InSb thin film added with boron in appropriate amount and to improve S/N ratio of a hall element and the like by adding boron in appropriate amount in the process to produce InSb film.

7. 发明专利

JPS5225564A SEMICONDUCTOR THINNFILM MONOCRYSTAL 失效
公开(公告)号：JPS5225564A
公开(公告)日：1977-02-25
申请号：JP10122975
申请日：1975-08-22
申请人： HITACHI LTD
发明人： MIYAMOTO NOBUO , OOI TETSU , KODERA NOBUO
IPC分类号： C30B13/06 , C30B29/40 , H01L21/18
摘要： PURPOSE:To obtain the crystal grain of which short diameter is more than 1 mm and long diameter, more than 6 mm, by means of applying the zone-melt into two directions being crossed with the crystal grain which are already in existence as the core.

8. 发明专利

JPS597679B2 JPS597679B2 - 失效
公开(公告)号：JPS597679B2
公开(公告)日：1984-02-20
申请号：JP3546379
申请日：1979-03-28
申请人： Hitachi Ltd
发明人： OOI TETSU , TAKAGI KAZUMASA , FUKAZAWA TOKUMI
IPC分类号： C01G41/00 , C09K11/68 , C30B13/00 , C30B15/00 , C30B15/04 , C30B29/32 , G01T1/202 , G21K4/00
CPC分类号： G21K4/00 , C09K11/68 , C30B13/00 , C30B15/00 , C30B29/32 , G01T1/2023 , Y10T428/31
摘要： A scintillator formed of a ZnWO4 single crystal having an absorption coefficient less than or equal to 1.8 cm-1 for the light having a wavelength of 520 nm is disclosed which has a luminescence wavelength of 480 nm and therefore can be combined with a photodiode, and which is high in radiation detection sensitivity, short in decay time, and specifically suitable for use in computed tomography.

9. 发明专利

JPS55130898A PREPARATION OF FERRITE SINGLE CRYSTAL 失效
公开(公告)号：JPS55130898A
公开(公告)日：1980-10-11
申请号：JP3837979
申请日：1979-04-02
申请人： HITACHI LTD
发明人： KOBAYASHI TOSHIO , OOI TETSU
IPC分类号： C30B11/00 , C30B13/00 , C30B13/18 , C30B15/00 , C30B29/22
摘要： PURPOSE:To make it possible to prepare a ferrite single crystal easily without forming a popping phenomenon by melting a ferrite stock material within an inert gas of above specific partial pressure value and under an oxygen atmosphere more than oxygen partial pressure value within the air. CONSTITUTION:In case of preparing a ferrite single crystal by a Bridgeman method, a floating zone melting method or the like, a ferrite stock material is melted within an atmasphere wherein nitrogen, argon, carbon dioxide with partial pressure of above 0.1 atmospheric pressure are contained within oxygen and the oxygen partial pressure thereof is more than the oxygen partial pressure in the air, pref., 2 atmospheric pressure, more pref., 5 atmospheric pressure as well as total pressure is pref. below about 30 atmospheric pressure. Thereby, various ferrite single crystals with a low FeO content can be stably prepared without generating popping.

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