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    • 1. 发明专利
    • Ion beam processing device
    • 离子束加工装置
    • JP2008251557A
    • 2008-10-16
    • JP2008188040
    • 2008-07-22
    • Hitachi Ltd株式会社日立製作所
    • MUTO HIROYUKIISHITANI TORUONISHI TAKESHIUMEMURA KAORU
    • H01J37/317
    • PROBLEM TO BE SOLVED: To provide an ion beam processing device in which height information is conveyed to an operator when one or a plurality of specific positions within a beam scanning region is/are shifted and adjusted to a required height and a work efficiency in a height adjustment can be improved.
      SOLUTION: The ion beam processing device is provided with a lens power source in which a lens strength of an ion beam irradiating means is adjusted and focused to one or a plurality of specific positions within a beam scanning region and a display means which calculates a focus height of the specific position based on the lens strengths and displays at least one or more information out of information such as a focus height of the specific positions, a relative height between the specific positions, a judgement result whether or not the focus height or the relative height is within a predetermined value including an allowable tolerance.
      COPYRIGHT: (C)2009,JPO&INPIT
    • 要解决的问题:提供一种离子束处理装置,其中在光束扫描区域内的一个或多个特定位置被移位并调整到所需高度和工作时,高度信息被传送到操作者 可以提高高度调整的效率。 解决方案:离子束处理装置设置有透镜电源,其中离子束照射装置的透镜强度被调整并聚焦到光束扫描区域内的一个或多个特定位置和显示装置, 基于透镜强度计算特定位置的焦点高度,并且显示诸如特定位置的焦点高度,特定位置之间的相对高度,无论焦点的判断结果的信息中的至少一个或多个信息 高度或相对高度在包括容许公差的预定值内。 版权所有(C)2009,JPO&INPIT
    • 2. 发明专利
    • ION BEAM PROCESSING APPARATUS
    • JP2001084947A
    • 2001-03-30
    • JP25840199
    • 1999-09-13
    • HITACHI LTD
    • MUTO HIROYUKIISHITANI TORUONISHI TAKESHIUMEMURA KAORU
    • H01J37/20H01J37/30H01J37/317
    • PROBLEM TO BE SOLVED: To perform height adjustment by an operator with high efficiency and durability by calculating the focused position in a specific part from lens strength and displaying information of the focused position in the specific part, a relative position, and a determined result whether the focused position or the relative position is within a set value. SOLUTION: Lens voltage of an objective lens when ion beam is focused on a sample is read, and the height of the sample is calculated automatically. The number 'one' 17a of a height display bar 17 is displayed to a Z-axis scale 19 at a position corresponding to the height of the sample, and the calculated value of the height is displayed in the number 'one' 18a column in a section to display the height. The lens voltage of the objective lens at the time, when ion beam is focused on a tip of a probe is read and a height of the tip of he probe is calculated. The number two 17b of the height display bar 17 is displayed to the Z-axis scale 19 at a position corresponding to the height of the tip of the probe, and the calculated value of the height of the tip of the probe is displayed in the number 'two' 18b column in the section to display the height. A relative height of the position number one and the position number 'two' is displayed in a section to display the relative height 20.
    • 3. 发明专利
    • CONVERGED ION BEAM MACHINING METHOD
    • JPH11219680A
    • 1999-08-10
    • JP2173598
    • 1998-02-03
    • HITACHI LTD
    • ISHITANI TORUONISHI TAKESHIIWATA KOJI
    • H01J37/22H01J37/31H01J37/317
    • PROBLEM TO BE SOLVED: To satisfy required high machining position accuracy by setting a machining region with a sample display image capable of changing the image magnifying power ratio between the X direction and Y direction of the image on a display. SOLUTION: A sample is guided into the sample chamber of a focused ion beam(FIB) device, and an image of a low-magnifying power scanning ion microscope(SIM) is acquired. A sample stage is moved and rotated so that four sides of rectangular patterns (a), (b), (d), (e) are made nearly parallel with the X-axis and Y-axis of the SIM image, a SIM image is acquired again, then the drift of the rotation angle θis corrected. The magnifying power ratio (m) between the X direction and Y direction is kept at 1, the image magnifying power is increased four times, a SIM image with m=4 is acquired, then the pattern (d) is obtained. Even when a machining region setting mark and a machining region are separated and they are not included in the visual field of the high-magnifying power SIM image, the magnifying power in the Y direction only is reduced to 1/4 times, thus the opposite end sections of the patterns (b), (d), (e) are included in the same visual field, and the set position accuracy in the X direction is made four times the accuracy in the Y direction in the machining region (f).
    • 5. 发明专利
    • SAMPLE OBSERVING DEVICE
    • JPH0757678A
    • 1995-03-03
    • JP19581393
    • 1993-08-06
    • HITACHI LTD
    • SATO HITOMIONISHI TAKESHIISHITANI TORU
    • H01J37/06H01J37/08H01J37/15H01J37/22
    • PURPOSE:To increase speed and efficiency in positioning a charged corpuscular beam source by displaying deviation of the charged corpuscular beam source as a map on two-dimensional (x and y) coordinates of a display. CONSTITUTION:A charged corpuscular beam emitted from a charged corpuscular beam source 1 is focused/deflected by electrostatic lenses 2a and 2b and electrostatic deflecting systems 3a and 3b, and is radiated to an optional position on a sample 5. Next, a secondary electron or a secondary ion emitted from the sample 5 is detected by a secondary electron detector 4, and is displayed on a display 307 as a secondary electron image according to a secondary electron signal 104. A position of the charged corpuscular beam source 1 is detected by a detecting mechanism 102 by using a potentiometer, and the value is read in a computer 308, and is displayed as a map on (x and y) coordinates of the display 307 Optical axis adjustment control is carried out on the position of the charged corpuscular beam source 1 according to an image screen of the computer by a charged corpuscular beam source position driving mechanism 103 or manual operation.
    • 6. 发明专利
    • FOCUSED ION BEAM DEVICE
    • JPH0729539A
    • 1995-01-31
    • JP19187193
    • 1993-07-07
    • HITACHI LTD
    • ONISHI TAKESHIISHITANI TORU
    • H01J37/256B23K15/08G01Q90/00H01J37/22H01J37/252H01J37/30
    • PURPOSE:To observe a grain at low cost with excellent resolution by dividing an observation object area imaginarily into plural small areas, and radiating a surface working beam and an observing beam at time series time. CONSTITUTION:An observation object area is divided imaginarily into prescribed spaces, and these are made to correspond to respective addresses of an image memory in the separately designated enlargement ratio. Deflecting points of positions 1(1st) to 9(9th) are defined so that beam spots are superposed half by half upon each other with a beam deflecting point (a position 5) corresponding to an address of the image memory as its center, and radiation is carried out in order. Thereby, a surface oxide film in the vicinity of respective beam deflcting points corresponding to the addresses can be removed. When the radiation of FIB to the positions 1 to 9 is completed, the FIB (for collecting data) is radiated (10th) to a deflecting point (a position 5 of surface work) corresponding to the address, and a generating secondary electron is detected, and is written in the image memory. By constituting in this way, a beam distributing weakly outside of a beam diameter is radiated to an oxide film on a sample, and the secondary electron is not emitted, so that the quality of an SIM image is not deteriorated.
    • 10. 发明专利
    • MANUFACTURE OF DEVICE USING DEVICE BLANKING INSPECTION MONITORING METHOD
    • JPH04111338A
    • 1992-04-13
    • JP22812590
    • 1990-08-31
    • HITACHI LTD
    • ISHITANI TORUONISHI TAKESHIOKURA OSAMU
    • H01J37/31H01L21/66
    • PURPOSE:To reduce the number of substrates used for inspection monitor so as to reduce the cost per device when devices are manufactured through various processes by processing a plurality of substrates as one lot by selecting at least one substrate for inspection monitor out from the plurality of substrates and performing inspection monitor by using unit devices blanked out from the substrate for inspection monitor at every kind of inspection monitor. CONSTITUTION:An FIB processing section 7 blanks out unit devices 2 and 3 from a substrate 1 for inspection monitor. When cross-sectional observation is required on the unit devices, the section 7 also produces necessary cross sections by using an FIB. Only the blanked out unit devices are carried to a SEM observing section by opening a gate valve 8. At the section 9 device manufacturing processes are monitored by observing and inspecting desired parts. When the unit devices are required to be returned to the substrate for inspection monitor, the devices are carried to the FIB processing section 7 where the unit devices are returned and fixed to the punched holes of the substrate for inspection monitor.