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1. 发明专利

JP2002150458A NOTIFYING SYSTEM BY INDIVIDUAL AT GENERATION OF TROUBLE 失效
公开(公告)号：JP2002150458A
公开(公告)日：2002-05-24
申请号：JP2000352521
申请日：2000-11-14
申请人： HITACHI LTD
发明人： OKA HITOSHI
IPC分类号： G08B27/00 , G08B25/08 , G08B25/10 , H04M3/22
摘要： PROBLEM TO BE SOLVED: To realize countermeasures with reduction in labor and cost reduction for a short time, by directly notifying to an individual by a monitoring system, when trouble generation on a hardware device in an informing system for carrying out a notification to an individual at the time of trouble generation. SOLUTION: In the notifying system, a contact to an individual or a plurality of persons adapted for a countermeasure to a trouble content is realized, without requiring labor, in a short time by registering a hardware device information, an individual information and an informing condition in a monitoring system.

2. 发明专利

JPH11179301A APPARATUS FOR WASHING PLATE-LIKE PART 失效
公开(公告)号：JPH11179301A
公开(公告)日：1999-07-06
申请号：JP35519797
申请日：1997-12-24
申请人： HITACHI LTD
发明人： DAIROKU NORIYUKI , TANAKA YUICHIRO , TAKAHARA YOICHI , SAEKI TOMONORI , AIUCHI SUSUMU , OKA HITOSHI
IPC分类号： B08B3/02 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To carry out highly precise washing without polluting surrounding environments. SOLUTION: When a plate-like part is washed and dried while being rotated, a hood installed in the surrounding of the plate-like part is rotated to efficiently lead scattered matter to a waste liquid unit. Consequently, a chemical liquid, water, and a drying gas are prevented from being scattered and polluting the surrounding environments and high precise washing can be carried out. In this case, an upper Bernoulli's unit 100 is so arranged as to move up and down by an up and down driving unit and the Bernoulli's unit is evacuated in the upper part at the time of taking in and out a wafer 1, which is an object to be washed, kept at 0.6 mm above the wafer at the time of washing and moved to 3 mm above the wafer at the time of drying.

3. 发明专利

JPH09255991A SURFACE-TREATING SOLUTION AND PROCESS FOR TREATING SUBSTRATE SURFACE 失效
公开(公告)号：JPH09255991A
公开(公告)日：1997-09-30
申请号：JP6456396
申请日：1996-03-21
申请人： HITACHI LTD
发明人： TAKAHARA YOICHI , YAMAMOTO EIJI , SAITO AKIO , OKA HITOSHI
IPC分类号： B08B3/08 , C11D7/04 , C11D7/18 , C11D7/26 , C11D7/32 , C23G1/14 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To effectively prevent a substrate from causing the redeposition of metal ions eluted in an alkaline treating soln. by incorporating a specified sequestering agent into the soln. so as to remove the metal staining the surface of the substrate to be treated by using a small amount of the additive. SOLUTION: Since a metal ion coordinated with H2 O or OH in an alkaline treating soln. easily adheres to a substrate, an electron is fed into the metal ion to reduce the positive charge or to make it negative, thereby inhibiting the bonding of the metal ion to the substrate surface. For this purpose, the surface-treating sol. contains at least one of the following sequestering agents (1), (2) and (3): (1) diethylenetriaminepentaacetic acid of such a concn. that the wt. ratio thereof to the eluted iron ion is at least 3,000:1 and the one to the zinc ion eluted from the treated substrate is at least 30,000:1, (2) triethylenetetraminehexaacetic acid of such a concn. that the wt. ratio thereof to the copper ion eluted from the treated substrate is at least 40,000/1 and the one to the nickel ion is at least 40:1, and (3) glutamic acid of such a concn. that the wt. ratio thereof to aluminum ion eluted from the treated substrate is at least 30,000:1.

4. 发明专利

JPH07106767A MULTILAYERED WIRING BOARD AND ITS MANUFACTURE 失效
公开(公告)号：JPH07106767A
公开(公告)日：1995-04-21
申请号：JP24656593
申请日：1993-10-01
申请人： HITACHI LTD
发明人： SUGIYAMA HISASHI , KITAMURA NAOYA , YAMAGUCHI YOSHIHIDE , WATABE MAKIO , TANAKA ISAMU , OKA HITOSHI , KYOI MASAYUKI , TANIGUCHI YUKIHIRO
IPC分类号： H05K3/46
摘要： PURPOSE:To eliminate the influence of a plated through hole and bring out the high-density wiring ability of a multilayered wiring board to the utmost by electrically connecting conductor pads, conductor patterns, and conductor layers formed on a double-sided printed wiring board to each other. CONSTITUTION:After applying a photosensitive insulating resin 301 to both surfaces of a substrate and forming via holes 302 by pattern-exposing the resin to ultraviolet rays, the entire surface of the resin is further exposed to ultraviolet rays and the surface of the resin 301 is roughened. After roughening, the resin 301 is electroplated 303 with a thick layer of copper. Then a first-layer conductor pattern 304 is formed by patterning the deposited copper 303. After similarly forming a second and third conductor patterns, a multilayered wiring board is obtained by forming a solder resist on the surface. The wiring board is composed of cap-ground layers 401 and 408, signal layers 402, 403, 406, and 407, and two kinds of power source layers 404 and 405 and the connection between the signals layers on both surfaces of the base substrate and between the signals layers and the power source layer on the rear surface is made through conductor pads 409 connected to filled and plated through holes.

5. 发明专利

JPH06260763A MANUFACTURE OF MULTILAYER WIRING BOARD 失效
公开(公告)号：JPH06260763A
公开(公告)日：1994-09-16
申请号：JP4649793
申请日：1993-03-08
申请人： HITACHI LTD
发明人： WATABE MAKIO , SUGIYAMA HISASHI , OKA HITOSHI , IMABAYASHI SHINICHIRO , TANAKA ISAMU , YANO REIKO , TANIGUCHI YUKIHIRO
IPC分类号： H05K3/46
摘要： PURPOSE:To obtain a multilayer wiring board high in reliability and possessed of an interlayer insulating layer high in insulating properties by a method wherein an interlayer insulating resin layer and a wiring pattern layer are improved in adhesive strength between them by a build-up method. CONSTITUTION:An insulating rein layer 102 photosetting and thermosetting is formed on a board 101 and exposed to UV rays to be semi-cured, the semi- cured surface of the layer 102 is roughened into a roughened-surface layer 102'. A roughening treatment is carried out using a potassium permanganate alkaline solution. The board 101 is continuously heated or heated after a base conductive film 103 is formed to make the insulating rein layer 102 fully cured. A conductive film 104 necessary for a wiring is electroplated with copper, then a wiring pattern (two-layered film composed of 103' and 104') is formed, another insulating resin layer 102 is formed again as an interlayer insulating layer, exposed to UV rays, and developed, and a viahole 106 is made in the insulating resin layer 102 at a required point for interlayer connection. Thereafter, a surface roughening process, a fully curing heating process, a conductive film forming process, and a wiring pattern forming process are repeatedly executed so as to obtain a multilayer wiring board.

6. 发明专利

JPH06132267A FOREIGN MATTER ADHESION PREVENTIVE SOLUTION, AND CLEANING METHOD USING IT, AND CLEANER 失效
公开(公告)号：JPH06132267A
公开(公告)日：1994-05-13
申请号：JP27693892
申请日：1992-10-15
申请人： HITACHI LTD
发明人： SAITO AKIO , OTA KATSUHIRO , ITO HARUO , OKA HITOSHI
IPC分类号： B08B3/10 , H01L21/304
摘要： PURPOSE:To prevent the adhesion of foreign matter in the mixed solution between acid and ammonium water by adding matter, which can control the ZETA potential of the fine particles existing in solution, at concentration below critical micell concentration, into the neutral and acidic solution consisting of the mixed solution between acid and ammonium water. CONSTITUTION:For pure water being made by an ultrapure water supply means 4, the mixed liquid between specified quantities of acetic acid and ammonium water being made up in a reservoir 5 for mixed liquid between acid and ammonium water and the ZETA potential control matter supplied from a ZETA potential control matter reservoir 6 are mixed in a cleaning vessel, thus cleaning liquid containing in-liquid foreign matter preventive solution is prepared. As the ZETA potential control matter, there is an anionic interface activator and it is added so that the concentration may be critical micell concentration or under. And, an Si wafer 3 is carried into a cleaning vessel 1 from a wafer carrier 8, and the Si wafer is cleaned, being soaked in the solution within the vessel for a certain time. Hereby, the adhesion of foreign matter within the mixed solution between acid and ammonium water can be prevented.

7. 发明专利

JPH0684866A PREVENTION OF ADHESION OF FOREIGN MATTERS 失效
公开(公告)号：JPH0684866A
公开(公告)日：1994-03-25
申请号：JP23684592
申请日：1992-09-04
申请人： HITACHI LTD
发明人： SAITO AKIO , OTA KATSUHIRO , ITO HARUO , OKA HITOSHI
IPC分类号： B08B3/10 , H01L21/304
摘要： PURPOSE:To prevent adhesion of foreign matters in a hydrofluoric acid water solution by adding a substance controlling zeta potential of foreign matters and a substrate to a hydrofluoric acid water solution. CONSTITUTION:HF: H2O=1:19 solution 2 is adjusted and an anionic interface activator is added into a layer to be cleaned. Since absolute values of zeta potential of both of Si particles and an Si substrate are small (approaching zero) in a hydrofluoric acid, and electrostatic repulsive force between foreign matters and the substrate comes to be lowered so as to facilitate adhesion of foreign matters. Adhesion of the anionic interface activator to the hydrofluoric acid water solution lowers zeta potential (increases absolute value) of foreign matters and the substrate. Thereby, electrostatic repulsive force between foreign matters and the substrate increases so as to prevent adhesion of foreign matters.

8. 发明专利

JPH0653198A CLEANING AGENT AND CLEANING METHOD FOR SEMICONDUCTOR SUBSTRATE USING SAME 失效
公开(公告)号：JPH0653198A
公开(公告)日：1994-02-25
申请号：JP6048893
申请日：1993-03-19
申请人： HITACHI LTD
发明人： TAKAHARA YOICHI , SAITO AKIO , YAMAMOTO EIJI , ITO HARUO , OKA HITOSHI
IPC分类号： B08B3/08 , C11D7/32 , C11D7/36 , H01L21/304
摘要： PURPOSE:To obtain a cleaning agent which is an effective cleaning agent for removing heavy metal ions without changing the substrate surface by etching while using no organic solvent and allowing it to be used as a water solution in the cleaning process of a substrate in cleaning a semiconductor substrate or the like. CONSTITUTION:This is a cleaning agent containing a ligand having an electron donating property to heavy ions in a water solution such as a porphyrin group compound having a water-soluble radical, a crown ether group compound having a water-soluble radical and at least one compound to be selected from ring polyamine, and a cleaning method of a semiconductor substrate using it.

9. 发明专利

JPH05195237A CHEMICAL COPPER PLATING METHOD WITHOUT USING FORMALIN 失效
公开(公告)号：JPH05195237A
公开(公告)日：1993-08-03
申请号：JP820292
申请日：1992-01-21
申请人： HITACHI LTD
发明人： YANO REIKO , IMABAYASHI SHINICHIRO , OKA HITOSHI
IPC分类号： C23C18/40 , H05K3/18
摘要： PURPOSE:To improve the stability of bath, deposition rate and physical properties of deposited film by using a plating bath containing a water-soluble bivalent copper compd., complexing agent, reducing agent, pH controlling agent, bath stabilizer and surfactant. CONSTITUTION:The chemical copper plating bath is prepared by mixing a water-soluble bivalent copper compd. such as copper sulfate, complexing agent for bivalent copper ion, tetramethylammonium borohydride as a reducing agent, pH controlling agent, additive to improve the bath stability, and surfactant as essential components. The complexing agent is polyamine carboxylic acid, etc. The bath is used by controlling it at about pH 7-10 and at about 50-80 deg.C. This chemical copper plating bath uses no formalin as a reducing agent. Thereby, the plating is performed stably for a long time.

10. 发明专利

JPH055904B2 失效
公开(公告)号：JPH055904B2
公开(公告)日：1993-01-25
申请号：JP21086483
申请日：1983-11-11
申请人： HITACHI LTD
发明人： OKUDAIRA HIROAKI , TANAKA ISAMU , OKA HITOSHI , KOBAYASHI TOSHIO , FUKAGAWA TAKEO
IPC分类号： C23C14/06 , C23C14/00 , C23C14/04 , C23C14/14 , C25D1/00 , C25D1/10

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