专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2005071919A Highly efficient organic light emitting element 有权
标题翻译：高效的有机发光元件
公开(公告)号：JP2005071919A
公开(公告)日：2005-03-17
申请号：JP2003303051
申请日：2003-08-27
申请人： Hitachi Displays Ltd , Hitachi Ltd , 株式会社日立ディスプレイズ , 株式会社日立製作所
发明人： NAKAYAMA TAKAHIRO , MURAKAMI HAJIME , SHIMIZU MASAO
IPC分类号： H05B33/24 , H01L51/50 , H05B33/14 , H05B33/22 , H05B33/28
CPC分类号： H01L51/5265
摘要： PROBLEM TO BE SOLVED: To solve problems that in a conventional light emitting element of resonator structure, because there is little degree of freedom of film thickness adjustment of electron transport layer in order to adjust electric charge balance of the light emitting element, adjustment of the phase of electromagnetic wave is scarcely possible when it is emitted from a light emitting layer and reflected by a metal electrode and arrives again to the light emitting layer, furthermore that the arriving excitation state at the metal electrode is deactivated to cause non-light emission because a material which has a long time of several μ seconds or more in excitation and relaxation time moves and is diffused for a long distance from the light emitting layer until the excitation state is dissipated, and that a high brightness or a high efficiency is not achieved in a conventional light emitting element of the resonator structure.
SOLUTION: By using a transparent conductive film in a hole transport layer 203, a light emitting layer 204, an electron transport layer 205, and both an anode 202A of organic light emitting element having an electron injection layer 206 and a cathode 202B, and by installing films 201, 207 having light reflecting function outside the anode 202A and the cathode 202B respectively, the organic light emitting element in which the two problems have been simultaneously solved. In the organic light emitting element, a high efficiency, prevention of efficiency reduction on the high brightness side, and resonator effect can be introduced.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题为了解决现有的共振器结构的发光元件的问题，为了调整发光元件的电荷平衡，由于电子传输层的膜厚调整的自由度很小，当从发光层发射并被金属电极反射并再次到达发光层时，电磁波相位的调节几乎是不可能的，此外，金属电极处的到达激发状态被去激活，由于在激发和弛豫时间长时间为几秒或更长时间的材料移动并从发光层漫射到发光层直到激发状态消散为止，因此发光，并且高亮度或高效率在谐振器结构的常规发光元件中不能实现。解决方案：通过在空穴传输层203，发光层204，电子传输层205以及具有电子注入层206和阴极202B的有机发光元件的阳极202A中使用透明导电膜通过在阳极202A和阴极202B的外侧设置具有光反射功能的膜201,207，同时解决了两个问题的有机发光元件。在有机发光元件中，可以引入高效率，防止高亮度侧的效率降低和谐振器效应。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JPH08293836A TWO-DIMENSIONAL FREE SPACE BIDIRECTIONAL OPTICAL CONNECTION DEVICE 失效
公开(公告)号：JPH08293836A
公开(公告)日：1996-11-05
申请号：JP9652095
申请日：1995-04-21
申请人： HITACHI LTD
发明人： SAGAWA MASAKAZU , INABA YOSHIHITO , ISOGAI MASATO , NAKAYAMA TAKAHIRO , TSUNODA ATSUSHI
IPC分类号： G02F1/01 , H01L27/14 , H01L31/0232 , H04B10/11 , H04B10/40 , H04B10/43 , H04B10/50 , H04B10/60 , H04B10/80 , H04B10/28 , H04B10/02
摘要： PURPOSE: To avoid electromagnetic dielectric noise owing to electric wiring and heat generation accompanying transmission delay and the increase in power consumption by preventing the installation of fixed electric wiring connecting signal terminal that respective LSIs have one to one in optical interconnection. CONSTITUTION: A polyimide thin film is formed on an Si substrate, and a core thin film becoming the slab-type waveguide of a single mode is set by polyimide varnish. A hologram 7 is formed on the uppermost layer (clad) of the generated slab waveguide by anisotropic dry etching which is mainly composed of photolithography and O2 , and the waveguide is connected to light-emitting/receiving elements. An ITO transparent electrode is formed on the hologram 7. Organic EL is generated on the electrode. An upper electrode consisting of Ca is formed on the electrode, and an electrode 14 and a semiconductor layer 11 are made into a pattern by photolithography and RIE. The element is subjected to bias in a forward direction and it is made into the light-emitting element. Plural LSI chips (a clock control element, a memory, an arithmetic processor or the like) are arranged on the module substrate, and the whole are sealed by resin materials.

3. 发明专利

JPH0511399B2 失效
公开(公告)号：JPH0511399B2
公开(公告)日：1993-02-15
申请号：JP5727487
申请日：1987-03-12
申请人： HITACHI LTD
发明人： TAGUCHI KAZUO , FUYAMA MORIAKI , KIZAWA KENICHI , TAMURA KATSU , ONO YOSHIMASA , ABE YOSHIO , NAKAYAMA TAKAHIRO , SATO AKIRA , HASHIMOTO KENICHI
IPC分类号： H05B33/12 , G09F9/33 , H05B33/14 , H05B33/22

4. 发明专利

JPH0458158B2 失效
公开(公告)号：JPH0458158B2
公开(公告)日：1992-09-16
申请号：JP5247386
申请日：1986-03-12
申请人： HITACHI LTD
发明人： NAKAYAMA TAKAHIRO , FUYAMA MORIAKI , KIZAWA KENICHI , TAMURA KATSU , TAGUCHI KAZUO , SATO AKIRA , HASHIMOTO KENICHI , ABE YOSHIO
IPC分类号： H05B33/14 , C09K11/56 , H05B33/12

5. 发明专利

JPH03241694A ELECTROLUMINESCENT(EL) DISPLAY 失效
公开(公告)号：JPH03241694A
公开(公告)日：1991-10-28
申请号：JP3607690
申请日：1990-02-19
申请人： HITACHI LTD
发明人： KIZAWA KENICHI , ABE YOSHIO , NAKAYAMA TAKAHIRO , HASHIMOTO KENICHI , HANAZONO MASANOBU
IPC分类号： H05B33/06 , C09K11/00 , G09F9/30 , H05B33/08 , H05B33/12 , H05B33/14
摘要： PURPOSE:To increase the intensity of a light emitting layer by containing specific quantities of a rare earth element and phosphorus in the base material of a compound of group IIa and group VIb for the luminous center of the light emitting layer. CONSTITUTION:A stripe-shaped transparent electrode ITO 2 is formed on a glass substrate 1, then the first insulating layer Ta2O5 3 is formed. The first ZnS layer 4 is formed on the Ta2O5 3, and a SrS:Ce layer 5 is formed as a light emitting layer on the ZnS layer 4. The second ZnS layer 6 is formed on the SrS:Ce layer 5, then the second insulating layer Ta2O5 layer 7 is formed. A stripe-shaped back electrode Al 8 is formed on it perpendicularly to the transparent electrode ITO 2. A rare earth element 0.1-0.6mol% and phosphorus 0.1-1.0mol% are contained in the base material of a compound of group IIa (alkaline earth) and group VIb as the luminous center of the light emitting layer 5.

6. 发明专利

JPH02297894A FILM EL ELEMENT 失效
公开(公告)号：JPH02297894A
公开(公告)日：1990-12-10
申请号：JP7825789
申请日：1989-03-31
申请人： HITACHI LTD
发明人： ABE YOSHIO , KIZAWA KENICHI , TAMURA KATSU , NAKAYAMA TAKAHIRO , SATO AKIRA , HASHIMOTO KENICHI , HANAZONO MASANOBU
IPC分类号： H05B33/14 , H05B33/12
摘要： PURPOSE:To have a thin film type EL element with low drive voltage by forming a light emitting layer from a fluorescent film obtained by adding rare earth elements or transfer metal elements as the light emission center to oxides of alkali earth metal. CONSTITUTION:As an EL light emitting layer 4 is used a fluorescent film obtained by adding rare earth elements (for ex., Eu) or transfer metal elements as the light emission center to the mother material consisting of oxides of alkali earth metal (for ex., CaO). This allows prevention of reactions between the light emitting layer 4 and oxide insulative films 3, 5, and use of the oxides having large dielectric coefficient to the insulative layers 3, 5 allows suppression of the drive voltage.

7. 发明专利

JPH01304694A FILM EL ELEMENT 失效
公开(公告)号：JPH01304694A
公开(公告)日：1989-12-08
申请号：JP13520488
申请日：1988-06-01
申请人： HITACHI LTD
发明人： ABE YOSHIO , KIZAWA KENICHI , TAMURA KATSU , NAKAYAMA TAKAHIRO , SATO AKIRA , HASHIMOTO KENICHI , HANAZONO MASANOBU
IPC分类号： H05B33/22 , H05B33/12
摘要： PURPOSE:To obtain a film EL element having a stabilized luminous characteristic by providing, adjacent to a luminous layer, a film made of a nitride of a metal having a dielectric constant more than 20 of its oxide. CONSTITUTION:A stripe electrode 2 of ITO is formed on a glass substrate 1, Ta2O5 film 3B having a dielectric constant more than 20 and Ta nitride film 3A are piled on it in this order so as to form an insulating layer 3. Next, a CaS:Eu luminous layer 4 is evaporated on it, again Ta nitride film 5A and a Ta2O5 film 5B are piled on it so as to form a laminated insulating layer 5. Finally, upper electrodes 6 of Al having stripes transverse to the electrode 2 are provided. Owing to Ta nitride film, oxidation of the luminous layer is effectively prevented and adhesion between films of multiple layers is fine and stabilized. Secular change is small, preventing oxidation. With this film EL element, an EL display device having low driving voltage can be obtained.

8. 发明专利

JPH01241795A THIN FILM EL ELEMENT 失效
公开(公告)号：JPH01241795A
公开(公告)日：1989-09-26
申请号：JP6743388
申请日：1988-03-23
申请人： HITACHI LTD
发明人： KIZAWA KENICHI , ABE YOSHIO , TAMURA KATSU , NAKAYAMA TAKAHIRO , SATO AKIRA , TAGUCHI KAZUO , HASHIMOTO KENICHI , HANAZONO MASANOBU
IPC分类号： H05B33/22 , H05B33/12
摘要： PURPOSE:To obtain a thin film EL element having a stable luminous characteristic by using sulfide having high thermodynamic stability as an insulating layer material in contact with a luminous layer. CONSTITUTION:A part or the whole of the first insulating layer or the second insulating is composed of a film consisting of sulfide having high thermodynamic stability so as to make a film consisting of sulfide having thermodynamic stability to contact with a luminous layer. That is to say, a sulfide thin film layer of a group IIIb and rare earth is inserted in contact with the luminous layer. Sulfide of the group IIIb and rare earth is hard to be oxidized while having a small diffusion coefficient of oxygen. Accordingly, by using the above- mentioned material for the insulating layer coming in contact with the luminous layer, diffusion of hydrogen from the atmosphere or from an insulating layer material containing hydrogen into the luminous layer can be prevented so as to be able to stabilize an EL luminous characteristic.

9. 发明专利

JPH01220483A SUPERCONDUCTING ELECTRONIC DEVICE 失效
公开(公告)号：JPH01220483A
公开(公告)日：1989-09-04
申请号：JP4437788
申请日：1988-02-29
申请人： HITACHI LTD
发明人： NAKAYAMA TAKAHIRO , KASAI MASAHIRO , ONO TOSHIYUKI , KOZONO YUZO , HANAZONO MASANOBU
IPC分类号： H01L39/16
摘要： PURPOSE:To implement diode operation between superconductive materials, by bonding a plurality of superconductive materials having different superconductive transition temperature, and making a current flow at a specified temperature. CONSTITUTION:A superconductive material 1 having a superconducting transition temperature TA and a superconductive material 1 having a superconducting transition temperature TB are bonded, and a terminal a3 and a terminal b4 are provided. A current is made to flow from the terminal a3 to the terminal b4 through a superconductive element in this structure at temperature TA

10. 发明专利

JPH01107494A THIN FILM ELECTRO-LUMINESCENCE ELEMENT 失效
公开(公告)号：JPH01107494A
公开(公告)日：1989-04-25
申请号：JP26383687
申请日：1987-10-21
申请人： HITACHI LTD
发明人： KIZAWA KENICHI , TAGUCHI KAZUO , FUYAMA MORIAKI , TAMURA KATSU , SATO AKIRA , HASHIMOTO KENICHI , ABE YOSHIO , NAKAYAMA TAKAHIRO
IPC分类号： H05B33/18 , H05B33/12 , H05B33/14
摘要： PURPOSE:To make it possible to obtain a highly bright white-light emitting electro-luminescence element by specifying a Pr concentration in the matrix of SrS in a thin luminous film layer. CONSTITUTION:A transparent conductive film 2 and first insulation layers 3, 4 are formed on a glass substrate 1, and a luminous layer of SrS:Pr6 is formed on them by electron beam deposition. For improving adhesion with the insulation layers 3, 4, a layer 5 of ZnS is put on each side of a luminous layer 6. For forming the luminous layer 6, SrS powders are mixed with PrCl3 powders, and they are pressurized and molded to be deposition material, which is vaporized in an electron beam deposition device. The density of Pr as activating agent in the matrix of SrS is set to be 0.07-0.28mol%. A highly bright white-light emitting electro-luminescence element can thus be obtained.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式