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1. 发明专利

JPH03222379A SOLID-STATE LASER DEVICE 失效
公开(公告)号：JPH03222379A
公开(公告)日：1991-10-01
申请号：JP1601690
申请日：1990-01-29
申请人： HITACHI LTD
发明人： MAIKERU MAKUROKURIN , TATENO KIMIO , KANETAKE TATSURO , TODA TAKESHI , YANAGISAWA HIRONORI
IPC分类号： H01S3/094 , H01S3/1055
摘要： PURPOSE:To enable a laser ray source which outputs laser rays of specified wavelength and output power to be offered by a method wherein a pumping light is fed, the wavelength of the pumping light is monitored, the drive current of a means which supplies the pumping light is made to change so as to obtain the pumping light of required wavelength, and an attenuation means placed in an optical path is electronically controlled in absorption characteristics. CONSTITUTION:Three photodetectors 21, 22, and 23 adjacent to one another are arranged in the optical path of diffracted light so as to enable light of required wavelength to be incident on the central photodetector 22 at an angle of prescribed diffraction order, and the drive current of a laser diode 3 is so controlled as to make the optical signal from the photodetector 22 maximal. The direction of the optical signal change can be judged by the optical signals of the photodetectors 21 and 23. The output change of the photodetector 22 attendant on the change of the drive current is so compensated by a liquid crystal attenuator 25 placed in the optical path as to make the output constant. That is, the liquid crystal is made to change in transmittance by adequately adjusting a voltage applied to the liquid crystal corresponding to the output change of a laser diode attendant on the change of the drive current to keep the transmitted light constant.

2. 发明专利

JPH0479279A LASER LIGHT GENERATOR 失效
公开(公告)号：JPH0479279A
公开(公告)日：1992-03-12
申请号：JP19294590
申请日：1990-07-23
申请人： HITACHI LTD
发明人： NAKATSUKA SHINICHI , OSHIMA MASAHIRO , TATENO KIMIO , KAJIMURA TAKASHI , MAIKERU MAKUROKURIN
IPC分类号： H01S3/094 , H01S5/00
摘要： PURPOSE:To have a small change in wave length by building an optical resonator of semiconductor laser as if only light of a first wave length were resonated within the scope of the optical gain distribution of the semiconductor laser. CONSTITUTION:On an n-type GaAs substrate 1, an Al-5Ga-5As clad layer 2, a quantum well-structured active layer 3 and a p-type Al-5Ga--5As clad layer 4 are deposited in this order. Next the periodic unevenness 10 is formed on the p-type Al-3Ga-7As clad layer 4. After that, a p-type Al-5Ga-5As layer 5 and an n-type GaAs layer 6 are deposited. Then, an SiO2 film is formed and three pieces of stripe patterns are so formed that they may cross the unevenness 10 at right angles. After Zn is diffused in the n-type GaAs layer 6 using the SiO2 film as a mask, a Cr/Au electrode 8 is formed on the front surface while an AuGaNi/Cr/Au electrode 9 is formed on the rear surface of the lamination. Then, end faces that cross a plurality of the stripe patterns at right angles are removed to turn the lamination into an optical resonator. After that, SiO2 coating films 11, 12 are formed alternately on the end face of each stripe pattern to convert light of 180-degree phase to light of zero-degree phase. By this method, a reduced-size and high-output device is manufactured without any necessity of temperature control, etc.

3. 发明专利

JPH0429383A OPTICALLY MODULATABLE HIGHER HARMONIC WAVE LIGHT SOURCE AND OPTICAL INFORMATION PROCESSOR USING SAME 失效
公开(公告)号：JPH0429383A
公开(公告)日：1992-01-31
申请号：JP13382190
申请日：1990-05-25
申请人： HITACHI LTD
发明人： TATENO KIMIO , MAIKERU MAKUROKURIN , TODA TAKESHI
IPC分类号： H01S3/094 , G02F1/35 , G02F1/37 , G02F1/377 , G11B7/125 , G11B7/127 , G11B7/128 , G11B7/135 , G11B7/1381 , H01S3/10 , H01S3/108 , H01S3/109 , H01S5/022
摘要： PURPOSE:To modulate a second harmonic wave in response to the intensity of an information signal by providing a laser active medium for forming a resonator to a reflecting surface, and a harmonic wave generating medium provided in the resonator to generate a hermonic wave, and applying an ultrasonic wave to any of them. CONSTITUTION:In an acoustic-optical element, a transducer 7 is bonded to a dielectric crystal 6 such as TeO2 (tellurium dioxide), PbMoO4 (lead molybdate), and an AC voltage of MHz or more is applied thereto to generate an ultrasonic wave 9. A compressional wave by such an ultrasonic wave 9 or an electro- optical wave can be regarded as a diffraction grating generated in a crystal. If it exists in the crystal, an incident laser beam 10 is diffracted to bent its propagation path. Thus, the ultrasonic wave is bent in the propagating direction of an incident laser basic wave or a second harmonic wave to turn ON, OFF the ultrasonic wave or to alter the amplitude. Thus, the intensity of the basic wave or its second harmonic wave can be modulated.

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