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1. 发明专利

JP2010093093A Semiconductor device and method of manufacturing the same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2010093093A
公开(公告)日：2010-04-22
申请号：JP2008262351
申请日：2008-10-09
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： KAWASAKI MASAHIRO , FUJIMORI MASASHIGE , SHIBA TAKEO , ARAI TADASHI
IPC分类号： H01L21/336 , H01L21/28 , H01L21/368 , H01L29/417 , H01L29/786 , H01L51/05 , H01L51/40
摘要： PROBLEM TO BE SOLVED: To provide a thin-film transistor having high performance by finely forming a thin-film transistor by using coating technique and printing technique and further reducing photoconduction. SOLUTION: With respect to the thin-film transistor having respective members, such as a source-drain electrode, a gate insulating film, an organic semiconductor layer, and a gate electrode, laminated on an insulating substrate, and a display device, an IC tag device, and a sensor device including the transistor, the organic semiconductor layer is formed by a coating method or printing method, and at least a part (at least an end in a channel-length direction) in a nearly pattern plane shape of the organic semiconductor layer on the source-drain electrode is in a self-aligning shape overlapping with a pattern shape on the source-drain electrode. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：通过使用涂布技术和印刷技术，通过精细地形成薄膜晶体管并进一步降低光电导率来提供具有高性能的薄膜晶体管。解决方案：对于层叠在绝缘基板上的诸如源 - 漏电极，栅极绝缘膜，有机半导体层和栅电极的各个部件的薄膜晶体管和显示装置 IC标签装置，以及包含晶体管的传感器装置，通过涂布方法或印刷方法形成有机半导体层，并且在近似图形平面中至少形成有至少一部分（沟道长度方向的至少一端）源 - 漏电极上的有机半导体层的形状为与源极 - 漏极电极上的图案形状重叠的自对准形状。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2009164368A Organic thin film transistor, and manufacturing method thereof 有权
标题翻译：有机薄膜晶体管及其制造方法
公开(公告)号：JP2009164368A
公开(公告)日：2009-07-23
申请号：JP2008001024
申请日：2008-01-08
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： HASHIZUME TOMIHIRO , ARAI TADASHI , SHIBA TAKEO , SUWA YUJI
IPC分类号： H01L29/786 , H01L21/28 , H01L21/336 , H01L21/8238 , H01L27/08 , H01L27/092 , H01L29/417 , H01L51/05
摘要： PROBLEM TO BE SOLVED: To provide techniques for discriminating combinations of electrodes and organic semiconductors of organic TFTs which are improved in electron injection efficiency and hole injection efficiency, to actualize two kinds of TFTs which are n-channel TFTs and p-channel TFTs, and further to provide complementary organic thin film transistor (organic CTFT) and an organic CTFT array forming desired arbitrary circuit constitution with organic CTFTs.
SOLUTION: Only surface modifications of an electrode and an insulating film are selectively changed, without changing TFT materials, by using a mathematical expression values of differences in Fermi energy on a semiconductor-electrode interface and a semiconductor-gate insulator interface to actualize n-type and p-type TFTs. An arbitrary circuit is constituted by connecting all of source electrodes and gate electrodes of p-type channel TFTs and drain electrodes and gate electrodes of n-type channel TFTs, performing processes for the surface modifications, and then disconnecting unnecessary wiring by light irradiation etc.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供用于区分电子注入效率和空穴注入效率提高的有机TFT的电极和有机半导体的组合的技术，以实现作为n沟道TFT和p沟道的两种TFT TFT，并进一步提供互补的有机薄膜晶体管（有机CTFT）和有机CTFT阵列，形成有机CTFT所需的任意电路结构。解决方案：通过使用半导体 - 电极界面和半导体 - 栅极绝缘体界面上的费米能的差异的数学表达式来选择性地改变电极和绝缘膜的表面改性，而不改变TFT材料，以实现 n型和p型TFT。通过连接n型沟道TFT的p型沟道TFT和漏电极和栅电极的所有源电极和栅电极，进行表面改性的处理，然后通过光照射等将不必要的布线断开来构成任意电路。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2009152335A Semiconductor device, and manufacturing method thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2009152335A
公开(公告)日：2009-07-09
申请号：JP2007328167
申请日：2007-12-20
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： ARAI TADASHI , SAITO SHINICHI
IPC分类号： H01L21/288 , H01L21/28 , H01L21/3205 , H01L21/336 , H01L29/786 , H05K3/10
摘要： PROBLEM TO BE SOLVED: To solve the problem that in an electrode and wiring forming method using metal nanoparticulates, a heat treatment of about 200°C is needed to lower a resistance value after the metal nanoparticulates are applied or printed, but a flexible substrate of plastic etc., deforms owing to the heat treatment since the substrate has a heat resistance of about 150°C. SOLUTION: According to the invention, metal electrodes and wiring can be formed without any superheating baking by performing exposure to a gas containing halogen after the metal nanoparticulates are printed in a desired shape. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题为了解决使用金属纳米颗粒的电极和配线形成方法的问题，需要约200℃的热处理以降低施加或印刷金属纳米颗粒后的电阻值，但是由于基板具有约150℃的耐热性，所以由于热处理而使柔性塑料基板等变形。解决方案：根据本发明，金属电极和布线可以通过在将金属纳米颗粒印刷成所需形状之后对含有卤素的气体进行曝光而形成，而不进行任何过热烘烤。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2008021814A Field-effect transistor, organic thin film transistor, and method of manufacturing organic transistor 审中-公开
标题翻译：场效应晶体管，有机薄膜晶体管和制造有机晶体管的方法
公开(公告)号：JP2008021814A
公开(公告)日：2008-01-31
申请号：JP2006192292
申请日：2006-07-13
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： HASHIZUME TOMIHIRO , FUJIMORI MASASHIGE , SUWA YUJI , ARAI TADASHI
IPC分类号： H01L29/786 , H01L21/28 , H01L29/417 , H01L51/05 , H01L51/30
CPC分类号： H01L51/0021 , H01L51/0545 , H01L51/105
摘要： PROBLEM TO BE SOLVED: To provide a technique for discriminating combinations of electrodes having improved electron and hole injection efficiencies in an organic semiconductor of an organic TET, achieve two kinds of FETs, i.e., n- and p-type FETs, and to provide a complementary MOS (CMOS).
SOLUTION: The technique is introduced for generally obtaining the vacuum level shift Δ in an electrode metal-organic semiconductor interface from physical constants of the constituent elements of electrodes and an organic semiconductor. The electrode metal is changed by the electrochemical method to form electrodes capable of controlling the electron and hole injections. Two kinds of FETs, n- and p-type FETs, are achieved with these electrodes, and a complementary MOS (CMOS) is provided.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种用于区分有机TET的有机半导体中具有改善的电子和空穴注入效率的电极的组合的技术，实现两种FET，即n型和p型FET，以及以提供互补MOS（CMOS）。解决方案：该技术被引入用于从电极和有机半导体的组成元件的物理常数获得电极金属 - 有机半导体界面中的真空电平移动Δ。通过电化学方法改变电极金属，形成能够控制电子和空穴注入的电极。使用这些电极实现两种FET，n型和p型FET，并且提供互补MOS（CMOS）。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2003262960A ELECTRON BEAM SENSITIVE RESIST COMPOSITION AND METHOD FOR MANUFACTURING STAMPER BY USING THE SAME 审中-公开
公开(公告)号：JP2003262960A
公开(公告)日：2003-09-19
申请号：JP2002065037
申请日：2002-03-11
申请人： HITACHI LTD
发明人： SAKAMIZU TOSHIO , ARAI TADASHI , UTAKA SONOKO
IPC分类号： G03F7/039 , G11B7/26
摘要： PROBLEM TO BE SOLVED: To provide an electron sensitive resist composition from which a pattern of high resolution and high dimensional accuracy can be obtained and to provide a method for manufacturing a stamper by using the composition. SOLUTION: The following resist composition is prepared and applied on a substrate 101 to form a resist film. The resist composition contains (a) a compound which generates an acid by exposure to electron beams and (b) a resin obtained by acid catalytic addition reaction of a binder resin having at least one kind of carboxyl group, a phenolic hydroxyl group and 2- hydroxyhexafluoroisopropyl group, a compound having at least two or more vinyl ether groups in one molecule and a nitrogen containing resin binder. The resist film is irradiated with radiation 105 and developed to form a resist pattern 107. The obtained pattern is used as a mask to form recesses in the substrate 101, which is used to manufacture a stamper (not shown in the figure). COPYRIGHT: (C)2003,JPO

6. 发明专利

JP2002196483A PHOTOMASK AND MANUFACTURING METHOD OF ELECTRONIC DEVICE USING IT 失效
公开(公告)号：JP2002196483A
公开(公告)日：2002-07-12
申请号：JP2000391795
申请日：2000-12-25
申请人： HITACHI LTD
发明人： UTAKA SONOKO , ARAI TADASHI , ARAKI TSUTOMU , MOMOSE SATOSHI , YAMAGUCHI OSAMU
IPC分类号： G03F7/004 , C09K3/00 , G03F1/30 , G03F1/32 , G03F1/56 , G03F1/68 , G03F7/09 , G03F7/20 , H01L21/027 , H01L21/8238 , H01L27/092 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To manufacture a photomask for KrF excimer laser lithography in a short period and at low cost, and to reduce a manufacturing period and the cost of a semiconductor integrated circuit device. SOLUTION: In the photomask manufacturing process, a light shading body pattern is directly made using the photopolymer composition containing a chemical compound which absorbs the specific light.

7. 发明专利

JP2000155420A PATTERN FORMING MATERIAL AND PATTERN FORMING METHOD USING SAME 失效
公开(公告)号：JP2000155420A
公开(公告)日：2000-06-06
申请号：JP33224098
申请日：1998-11-24
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： SAKAMIZU TOSHIO , MURAI FUMIO , ARAI TADASHI , KATO KOJI , SATO KAZUHIKO , ARASAWA MASATOSHI
IPC分类号： G03F7/004 , G03F7/023 , G03F7/039
摘要： PROBLEM TO BE SOLVED: To make it possible to form a resist high in sensitivity and resolution by exposure to (i) line or radiation by using a a sulfonate ester having a specified structure as an acid precursor for a chemically amplifiable photoresist using a novolak resin as a base resin. SOLUTION: The pattern forming material comprises the novolak resin, a medium having a reactivity for increasing solubility in an aqueous alkaline solution by an acid catalyst, and an acid precursor having an ester of an N- hydroxy imide and a camphor sulfonic acid. As the acid precursor, the ester of the N-hydroxyimide having >=2 condensed polycyclic hydrocarbon with the camphor sulfonic acid is perferable. It is preferred that the content of this acid precursor is 0.5-10 pts.wt. of 100 pts.wt. of the sum of the medium having reactivity of changing solubility in the aqueous alkaline solution by the acid catalystic reaction and the alkali-soluble resin.

8. 发明专利

JPH10268518A PATTERN FORMING MATERIAL AND PATTERN FORMING METHOD BY USING SAME 失效
公开(公告)号：JPH10268518A
公开(公告)日：1998-10-09
申请号：JP7499097
申请日：1997-03-27
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： UTAKA SONOKO , UCHINO MASAICHI , YAMAMOTO JIRO , MURAI FUMIO , ARAI TADASHI , SAKAMIZU TOSHIO
IPC分类号： G03F7/038 , C09D5/00 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a pattern forming material having sensitivity not affected by a temperature distribution occurring inside a wafer at the time of heat treatment after depicturing by X-rays and high in sensitivity and resolution by incorporating a specified polymer, a tertiary alcohol, a specified acid precursor and a specified basic compound. SOLUTION: This pattern forming material contains the alkali-soluble polymer, the tertiary alcohol having a hydroxyl group on a carbon atom directly combined with an aromatic ring, the acid precursor to be allowed to release an acid, and at least one of basic compounds represented by formulae I-VIII in which each of R1 -R7 is, independently, an H atom or a 1-4 C optionally substituted alkyl, phenyl, benzyl, phenetyl, pyridyl, cyclohexyl, p-tolyl, quinolyl, allyl, or methoxymethyl group.

9. 发明专利

JPS546884A NEMATIC LIQUID CRYSTAL BODY FOR DISPLAY DEVICE 失效
公开(公告)号：JPS546884A
公开(公告)日：1979-01-19
申请号：JP7224777
申请日：1977-06-20
申请人： DAINIPPON INK & CHEMICALS , HITACHI LTD , DAINIPPON INK RIKAGAKU KENKUYS
发明人： NAKAGOME TAMIJI , TORIYAMA KAZUHISA , SATOU HISATO , ARAI TADASHI , MORITA KATSUHIKO , FUJITA YUTAKA
IPC分类号： C09K19/30 , C07C67/00 , C07C253/00 , C07C255/55 , C09K19/46 , G02F1/13 , G09F9/00 , G09F9/30 , G09F9/35
摘要： PURPOSE:To provide a chemically stable liquid crystal body allowing a wide margin for display devices, which consists of a mixt. of one or more kinds of cyclohexanecarboxylic acid phenyl ester derivatives and optionally a Np liquid crystal or a nematic liquid crystal having negative dielectric anisotropy.

10. 发明专利

JP2009200315A Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2009200315A
公开(公告)日：2009-09-03
申请号：JP2008041449
申请日：2008-02-22
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： ARAI TADASHI , SAITO SHINICHI
IPC分类号： H01L21/336 , G09F9/30 , H01L21/28 , H01L21/3205 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/786 , H01L51/05 , H01L51/40
CPC分类号： H01L51/0023 , H01L27/1225 , H01L29/7869 , H01L51/0545
摘要： PROBLEM TO BE SOLVED: To solve the problem that when a thin film transistor is manufactured by a printing method, registering precision between a first electrode and a second electrode is not high, and when a thin film transistor is manufactured by photolithography, photomasks of respective layers are necessary to raise the cost. SOLUTION: The outline is to perform not only processing of a gate shape using a resist pattern formed by exposure through a photomask for a gate pattern, but also processing of a source/drain electrode on a substrate by employing a lift-off. Thus, the source/drain electrode and a gate electrode are positioned. COPYRIGHT: (C)2009,JPO&INPIT

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