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1. 发明专利

JPH11133606A PATTERN FORMING MATERIAL AND FORMATION OF PATTERN USING THE SAME 失效
公开(公告)号：JPH11133606A
公开(公告)日：1999-05-21
申请号：JP29814997
申请日：1997-10-30
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： UTAKA SONOKO , UCHINO MASAICHI , SAKAMIZU TOSHIO , ARAI TADASHI
IPC分类号： G03F7/004 , G03F7/038 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To improve the dimensional accuracy at the formation pattern by containing an alkali soluble high polymer, a tertiary alcohol having hydroxide group on carbons directly bonded to an aromatic ring, an acid precursor generating an acid by the irradiation with radial ray and a specific organic salt to suppress the dispersion of the sensitivity with respect to the temp. distribution generated on a wafer face at the time of heating after the irradiation with radial ray. SOLUTION: The alkali soluble high polymer, the tertiary alcohol having hydroxide group on the carbons directly bonded to the aromatic ring, the acid precursor generating the acid by the irradiation with radial ray and at least one kind of the organic salt selected from a group expressed by formula or the like are contained. In the formula, each of R1 -R3 represents hydrogen, an atom or an atomic group selected from a 1-7C linear or branched (substituted) alkyl group, phenyl group, benzyl group. R1 -R3 can be the same as or different from each other. X represents an anion selected from a group consisting of halogen, hexafluoroantimonate and the like.

2. 发明专利

JPH0974058A RESIST PATTERN FORMATION METHOD AND ITS DEVICE 失效
公开(公告)号：JPH0974058A
公开(公告)日：1997-03-18
申请号：JP22880095
申请日：1995-09-06
申请人： HITACHI LTD
发明人： YAMAMOTO JIRO , MURAI FUMIO , UCHINO MASAICHI , UTAKA SONOKO
IPC分类号： H01L21/027
摘要： PROBLEM TO BE SOLVED: To improve the resistance to dry etching by improving the shape abnormality of the surface of a resist which was a problem with a chemically amplifying negative resist. SOLUTION: By performing the auxiliary exposure 107 onto a resist, using a beam for activating a catalyst, having a wavelength where the transmissivity becomes 20% or under in resist and, to the section 105 short of acid at the surface of a resist layer 102, acid is generated anew on the surface layer, and an acid supply part 108 is made on the surface layer of the resist layer, thus a pattern 106 without shape abnormality of the resist pattern surface is obtained.

3. 发明专利

JPH0777802A PATTERN FORMING MATERIAL, ACID PRECURSOR AND PATTERN FORMING METHOD 失效
公开(公告)号：JPH0777802A
公开(公告)日：1995-03-20
申请号：JP22417893
申请日：1993-09-09
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： UCHINO MASAICHI , UTAKA SONOKO , UENO TAKUMI , HATTORI KOJI , YAMAMOTO JIRO
IPC分类号： G03F7/031 , G03F7/038 , G03F7/039 , G03F7/30 , G03F7/38 , H01L21/027
摘要： PURPOSE:To obtain a pattern forming material having high resolution and superior sensitivity to UV, electron beams, X-rays or other radiation by incorporating an acid precursor made of ester of a compd. having alcoholic hydroxyl groups with alkylsulfonic acid. CONSTITUTION:An acid precursor made of ester of a compd. having alcoholic hydroxyl groups with alkylsulfonic acid is used and it is not limited to a combination with a specified medium having such reactivity as to vary solubility to an aq. alkali soln. by a reaction in the presence of an acid catalyst. The compd. having alcoholic hydroxyl groups is ethylene glycol, propylene glycol, glycerol, etc. The alkyl group of the alkylsulfonic acid is represented by CnH2n+1 and 1-4C alkylsulfonic acid is effectively used.

4. 发明专利

JPH05113661A PHOTOSENSITIVE COMPOSITION, PATTERN FORMING METHOD USING THE SAME, AND FORMATION OF FLUORESCENT SCREEN 失效
公开(公告)号：JPH05113661A
公开(公告)日：1993-05-07
申请号：JP27534191
申请日：1991-10-23
申请人： HITACHI LTD
发明人： MORISHITA HAJIME , SUZUKI TETSUO , ITO MASAHITO , HAYASHI NOBUAKI , NONOGAKI SABURO , NISHIZAWA SHOKO , UTAKA SONOKO
IPC分类号： G03F7/00 , G03F7/004 , G03F7/012 , G03F7/021 , G03F7/038 , H01J1/64 , H01L21/027
摘要： PURPOSE:To obtain high sensitivity and to improve dispersibility in an aq. soln. by preparing a compsn. from specified copolymers and derivs. of polyvinyl alcohol having double bonds in side chains which react with these copolymers when the copolymers are photodissociated. CONSTITUTION:This photosensitive compsn. consists of copolymers and derivs. of polyvinyl alcohol having double bonds in side chains which react with these copolymers when these copolymers are photodissociated. These copolymers have at least water-insoluble insensitive monomer units and monomer units having azide groups and electrolytic functional groups. These copolymers have higher mol.wt. compared with alkali bichromate conventionally used as a photocrosslinking agent and have more photocrosslinking groups in one molecule. Since the photocrosslinking agent of this invention has high mol.wt., entanglement with acetals of polyvinyl alcohol as the base polymer is caused to improve the crosslinking efficiency of the photolyzed photocrosslinking agent to the polyvinyl alcohol. Moreover, by using acetals of polyvinyl alcohol, the compsn. is efficiently made insoluble.

5. 发明专利

JP2002311566A MASK FOR EXPOSURE AND METHOD FOR PRODUCING THE SAME 失效
公开(公告)号：JP2002311566A
公开(公告)日：2002-10-23
申请号：JP2001117606
申请日：2001-04-17
申请人： HITACHI LTD
发明人： SAKAMIZU TOSHIO , ARAI TADASHI , UTAKA SONOKO
IPC分类号： G03F7/039 , G03F1/54 , G03F7/20 , G03F7/38 , H01L21/027 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To provide a positive type pattern forming material having high sensitivity and high resolution, excellent in various performances such as dimension controllability and developed with an aqueous alkali solution and to provide a method for producing a mask for exposure in which the pattern forming material is made to function as a light shielding film. SOLUTION: The pattern forming material contains at least a compound which generates an acid when irradiated with radiation and a composition obtained by bringing a binder resin having carboxyl groups and/or phenolic hydroxyl groups, a compound having two or more vinyl ether groups in one molecule and a nitrogen-containing resin binder into an acid catalyzed addition reaction.

6. 发明专利

JP2001005190A PATTERN FORMING MATERIAL AND PATTERN FORMING METHOD USING THE SAME 失效
公开(公告)号：JP2001005190A
公开(公告)日：2001-01-12
申请号：JP17506099
申请日：1999-06-22
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： UTAKA SONOKO , UCHINO MASAICHI , YAMAMOTO JIRO
IPC分类号： G03F7/004 , G03F7/038 , G03F7/26
摘要： PROBLEM TO BE SOLVED: To improve the exposure latitude of a negative type pattern forming material, to enhance the precision of micro-fabrication and to obtain a high resolution pattern. SOLUTION: When a coating film of the pattern forming material is patternwise irradiated, the solubility of the latent image forming part in an aqueous alkali solution is varied and the coating film in the unirradiated part is thoroughly dissolved by development, the rate of a residual film in the irradiated part is >=70% of the thickness of the coating film. When the residual film is immersed in an aqueous solution containing 50% methanol, the rate of a residual film is >=50%.

7. 发明专利

JPH11307524A POSITIVE TYPE RADIATION SENSITIVE COMPOSITION AND PATTERN FORMATION USING THE SAME 失效
公开(公告)号：JPH11307524A
公开(公告)日：1999-11-05
申请号：JP11461698
申请日：1998-04-24
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： UCHINO MASAICHI , UTAKA SONOKO , HATTORI KOJI
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027 , H01L21/312
摘要： PROBLEM TO BE SOLVED: To enlarge diffusion of acid in a radiation exposure area by comprising acid generator which generates acid by irradiation, high polymer wherein phenol hydroxyl group or carboxylic acid group of alkaline soluble high polymer is protected, and water generator which generates water on reacting with acid. SOLUTION: High polymer 100 pts.wt., and diphenyliodonium toluenesulfonic acid salt 5 pts.wt. wherein poly-silicon (4-vinylphenol) phenol hydroxyl group is partially protected by tetrahydropyranyl group, are dissolved in cyclohexanone, and chemical amplification positive type radiation sensitive composition solution of solid concentration of about 10 wt.% is prepared. It is filtered and a pattern formation material is obtained. After a resist film is formed and pattern-like electron beam is cast, development is carried out and a fine pattern of line distance of 0.15 μm at electronic beam irradiation amount of 10 μC/cm is formed. As a result, pattern formation of 0.2 μm or below can be carried out highly precisely.

8. 发明专利

JPH11249290A POSITIVE RADIATION-SENSITIVE COMPOSITION AND PATTERN FORMING METHOD WITH IT 失效
公开(公告)号：JPH11249290A
公开(公告)日：1999-09-17
申请号：JP5179698
申请日：1998-03-04
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： UCHINO MASAICHI , UTAKA SONOKO
IPC分类号： H01L21/027 , G03F7/004 , G03F7/039
摘要： PROBLEM TO BE SOLVED: To provide a positive radiation-sensitive composition adaptable for ultra-fine pattern formation utilizing radiation of laser rays, ultraviolet rays or X-rays by containing an acid generating agent generating acid via radiation illumination, a polymer protected with the phenol hydroxy group or carboxylic acid group of an alkali-soluble polymer, and a water generating agent generating water when reacted with acid. SOLUTION: This positive radiation-sensitive composition contains an acid generating agent generating acid via radiation illumination, a polymer protected with the phenol hydroxy group or carboxylic acid group of an alkali-soluble polymer, and a water generating agent generating water when reacted with acid. The water generating agent selectively generates water at a radiation illumination section when reacted with the acid generated by the radiation illumination and increases the diffusion of acid at the radiation illumination section. An alcohol compound efficiently generating water via a dehydration reaction in a molecule or between molecules by an acid catalyst can be used for the water generating agent. Secondary alcohol or tertiary alcohol is preferably used within the alcohol compound because of its high reactivity with acid.

9. 发明专利

JPH10163085A PATTERN FORMATION MATERIAL 失效
公开(公告)号：JPH10163085A
公开(公告)日：1998-06-19
申请号：JP31590896
申请日：1996-11-27
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： UCHINO MASAICHI , UTAKA SONOKO , UENO TAKUMI , SUZUKI KAZUHIRO , HASHIMOTO MICHIAKI , SASAKI MAMORU
IPC分类号： G03F7/004 , G03F7/038 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To greatly enhance preservation stability by constituting a pattern formation material of thermocuring resin, an acid precursor, a specific compound, an organic solvent, as well as an epoxy compound with a lower boiling point than the organic solvent. SOLUTION: A pattern formation material includes thermocuring resin, an acid precursor, a compound represented by formula (wherein, R1 to R6 is hydrogen, either of an at most 3C alkyl group and a bromoacetyl group and at least two of R1 to R6 represent bromoacetyl group), an organic solvent as well as an epoxy compound with a lower boiling point than the organic solvent. Then, a content of the epoxy compound in this pattern-forming material is made about 5 to 30wt.% to thermocuring resin. Thereby, preservation stability of the pattern formation material is enhanced to be used to micromachining.

10. 发明专利

JPH08292560A PATTERN FORMING MATERIAL AND PATTERN FORMING METHOD 失效
公开(公告)号：JPH08292560A
公开(公告)日：1996-11-05
申请号：JP9825295
申请日：1995-04-24
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： UCHINO MASAICHI , UTAKA SONOKO , UENO TAKUMI , HASHIMOTO MICHIAKI , SASAKI MAMORU , YAMAMOTO JIRO , MURAI FUMIO
IPC分类号： G03F7/004 , G03F7/038
摘要： PURPOSE: To improve the sensitivity and shelf stability by incorporating a resin curable with an acid and an arom. compd. having a trichloroacetylamino group. CONSTITUTION: This pattern forming material contains a resin curable with an acid and an arom. compd. having a trichloroacetylamino group. The arom. compd. is preferably a compd. represented by the formula (where each of R1 -R5 is H,

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