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    • 4. 发明专利
    • METHOD FOR FORMING PRECISE PATTERN AND SEMICONDUCTOR DEVICE
    • JP2001096881A
    • 2001-04-10
    • JP27771199
    • 1999-09-30
    • HITACHI CHEMICAL CO LTD
    • TANAKA TOSHIAKIYASUDA MASAAKINISHIZAWA HIROSHIKAGEYAMA AKIRANOMURA YOSHIHIRO
    • B41F15/40B41M1/12H05K3/12
    • PROBLEM TO BE SOLVED: To provide a method for forming a precise pattern having excellent resolution without bleeding or sagging and a semiconductor device having the pattern and excellent reliability. SOLUTION: The method for forming a precise pattern comprises the steps of printing a resin paste having a complex viscosity measured at a frequency of 1 rad/s of 5 to 1,000 Pa.s, a ratio tanδ of a loss elastic modulus to a storage elastic modulus measured at a frequency of 100 rad/s of 1.2 to 10 times as large as a ratio tan δof the loss elastic modulus to the storage elastic modulus measured at the frequency of 1 rad/s while controlling a printing pressure. In this case, the method for forming the precise pattern comprises a step (A) of printing the resin paste having the complex viscosity measured at the frequency 1 rad/s of 5 to 1,000 Pa.s., a ratio tanδ of the loss elastic modulus to the storage elastic modulus measured at the frequency of 100 rad/s of 1.2 to 10 times as large as the ratio tanδ of the loss elastic modulus to the storage elastic modulus measured at the frequency of 1 rad/s while controlling to print through a meshless metal plate, a step (B) of thermally drying the printed paste, and repeating the steps (A) and (B) plural times. The semiconductor device is formed of the pattern on a substrate by the method for forming the pattern.