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1. 发明专利

JP2002352629A POLYVINYL CHLORIDE RESIN COMPOSITION-COVERED ELECTRIC WIRE/CABLE 失效
公开(公告)号：JP2002352629A
公开(公告)日：2002-12-06
申请号：JP2001160047
申请日：2001-05-29
申请人： HITACHI CABLE , TOKYO ELECTRON LTD , TAISEI CORP
发明人： WATANABE KIYOSHI , ITO HIROYUKI , SAITO MISAKO , HAYASHI TERUYUKI , HIRAYAMA NAOYA , KOBAYASHI SADAO , WAKAYAMA YOSHIHIDE
IPC分类号： C08K3/26 , C08K5/098 , C08K5/12 , C08L27/06 , C08L101/00 , H01B3/44 , H01B7/02
摘要： PROBLEM TO BE SOLVED: To provide polyvinyl chloride resin composition-covered electric wire/ cable suitable for use inside a clean room especially for manufacturing a semiconductor or a liquid crystal device by suppressing generation of AMCs(Airborne Molecular Contaminations). SOLUTION: This polyvinyl chloride family resin composition covered electric wire/cable has a covered layer comprising a polyvinyl chloride family resin composition containing polyvinyl chloride family resin and one kind or two kinds or more compounds selected from calcium soap, zinc soap, and hydrotalcite, and not containing both of a lead compound and β-diketone of melting point 100 deg.C or less.

2. 发明专利

JP2000176434A WASTE WATER TREATMENT DEVICE AND METHOD 失效
公开(公告)号：JP2000176434A
公开(公告)日：2000-06-27
申请号：JP35253398
申请日：1998-12-11
申请人： TOKYO ELECTRON LTD , TAISEI CORP , KURITA WATER IND LTD
发明人： KOMATSU HARUHIKO , SHINODA TOMOYUKI , HAYASHI TERUYUKI , KANEKO KIMIHITO , MURATA KOHEI , KAWAHARA MASATO , KUNUGI TOMOHIKO
IPC分类号： C02F1/00 , G01N33/18
摘要： PROBLEM TO BE SOLVED: To reduce the burden of a waste water treatment and to lower the waste water treatment cost by separating the waste water from a production device to the one whose impurity concentration is higher than a reference value or the other whose impurity concentration is lower than the reference value, discharging the waste water higher in the impurity concentration after a specified waste water treatment, recovering the waste water lower in the impurity concentration, and reutilize it. SOLUTION: The waste water is stored in a waste water receiving tank 20. In the waste water of higher impurity concentration separated with a retaining tank 21, the waste water, for example, having >0.5 ppm TOC concentration obtained by a total organic carbon(TOC) meter is allowed to flow to a waste water tank 23 through a line 22. Next, it is treated with a waste water treatment unit 24, and is further treated with a waste water treatment unit 25 to be discharged to a river, or the like. The waste water having

3. 发明专利

JP2009064726A Substrate inspection device, substrate inspection method, and storage medium 审中-公开
标题翻译：基板检查装置，基板检查方法和存储介质
公开(公告)号：JP2009064726A
公开(公告)日：2009-03-26
申请号：JP2007233060
申请日：2007-09-07
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： FUJIWARA KAORU , HAYASHI TERUYUKI , SAITO MISAKO
IPC分类号： H01J37/20 , H01L21/677
摘要： PROBLEM TO BE SOLVED: To execute a pattern defect inspection with high accuracy by preventing deformation and alteration or the like of a resist pattern caused by a temperature rise due to electron beam radiation.
SOLUTION: A cooling module is configured so that a vacuum container of the cooling module is air-tightly connected to a vacuum container of an inspection module while a substrate placing table is provided in the cooling vacuum container. The cooling module is provided with: a means for supplying heat-transfer gas between the surface of the placing table and a substrate; and a cooling means for cooling the placing table. The substrate is transferred between the inspection vacuum container and the cooling vacuum container by a substrate transfer means. The substrate heated by electron beam radiation in the inspection module is transferred to the placing table of the cooling module. The substrate cooled by the placing table is transferred into the inspection module so as to continue the resist pattern inspection.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：通过防止由于电子束辐射导致的温度升高引起的抗蚀剂图案的变形和改变等，以高精度执行图案缺陷检查。解决方案：冷却模块被构造成使得冷却模块的真空容器气密地连接到检查模块的真空容器，同时在冷却真空容器中设置基板放置台。冷却模块设置有：在放置台的表面和基板之间提供传热气体的装置; 以及用于冷却载置台的冷却装置。基板通过基板转印装置在检查真空容器和冷却真空容器之间转移。在检查模块中通过电子束辐射加热的基板被传送到冷却模块的放置台。由放置台冷却的基板被转移到检查模块中，以继续进行抗蚀剂图案检查。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2007224348A Environment-resistant member, apparatus for manufacturing semiconductor, method for producing environment-resistant member 有权
标题翻译：环境友好会员，制造半导体装置，生产环保会员的方法
公开(公告)号：JP2007224348A
公开(公告)日：2007-09-06
申请号：JP2006045490
申请日：2006-02-22
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： TAMURA AKITAKE , DOBASHI KAZUYA , HAYASHI TERUYUKI
IPC分类号： C23C4/02 , C23C4/10 , C23C28/04 , H01L21/205 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide an environment-resistant member having a thermal-sprayed ceramic film to be hardly peeled off formed on a substrate; a production method therefor; and an apparatus using the environment-resistant member for manufacturing a semiconductor. SOLUTION: A unit operation comprises the steps of: placing the substrate 1 in an atmosphere of the first raw gas containing an element selected from the element group of aluminum and the like; making the gas adsorbed onto the surface of the substrate; subsequently, changing the atmosphere in which the substrate is placed to that of the second raw gas which reacts with the first raw gas; and forming an oxide layer containing the above elements. The method for producing the environment-resistant member comprises the steps of: repeating the above unit operation several times to form an intermediate layer F2 formed of the above deposited oxide layer; and forming the thermal-sprayed ceramic film F1 on the surface of the intermediate layer F2 with a thermal spraying technique. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有在基板上形成的难以剥离的热喷涂陶瓷膜的耐环境构件; 一种生产方法; 以及使用用于制造半导体的耐环境构件的装置。解决方案：单元操作包括以下步骤：将基板1放置在包含选自铝元素组等的元素的第一原料气体的气氛中; 使气体吸附在基板的表面上; 随后将衬底放置的气氛改变为与第一原料气体反应的第二原料气体的气氛; 并形成含有上述元素的氧化物层。制造耐环境构件的方法包括以下步骤：重复上述单元操作多次以形成由上述沉积氧化物层形成的中间层F2; 并用热喷涂技术在中间层F2的表面上形成热喷涂陶瓷膜F1。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2006222242A EQUIPMENT AND METHOD FOR PRODUCING SEMICONDUCTOR 审中-公开
公开(公告)号：JP2006222242A
公开(公告)日：2006-08-24
申请号：JP2005033820
申请日：2005-02-10
申请人： TOKYO ELECTRON LTD
发明人： SAITO MISAKO , HAYASHI TERUYUKI , KOMIYA TAKAYUKI
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide equipment and a method for producing a semiconductor where impurities adhering to the inside of the equipment can be removed easily. SOLUTION: The equipment 1 for producing a semiconductor comprises a vacuum processing chamber 4 or 6, having a mechanism for charging a semiconductor wafer and depositing a film on the semiconductor wafer, a vacuum conveyance chamber 3 for conveying the semiconductor wafer, a means of generating negative ions, and a means of supplying negative ions generated from the ion-generating means to the vacuum processing chamber. In the vacuum processing chamber supplied with negative ions, the negative ions are made to react with particles inside the vacuum processing chamber, and the semiconductor wafer is charged negative by the charging mechanism so that ionized particles do not adhere thereto, thus removing the particles in the vacuum processing chamber. COPYRIGHT: (C)2006,JPO&NCIPI

6. 发明专利

JP2005294043A Ion implanter and ion implantation method 审中-公开
标题翻译：离子植入物和离子植入方法
公开(公告)号：JP2005294043A
公开(公告)日：2005-10-20
申请号：JP2004107546
申请日：2004-03-31
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KOMIYA TAKAYUKI , HAYASHI TERUYUKI
IPC分类号： H01J27/02 , H01J37/08 , H01J37/317 , H01L21/265
摘要： PROBLEM TO BE SOLVED: To provide an ion implanter having simple structure, small, and inexpensive.
SOLUTION: In a process chamber 11, a negative ion source S containing oxygen negative ion radicals is set. A hot plate 41 heats the set negative ion source S, and a high voltage power supply 12 applies an electric field to the heated source S. Consequently, oxygen negative ion radicals are taken out from the source S, and a highly monochromatic ion beam is formed. The formed ion beam is converged by an electrostatic lens 21, is accelerated by an after-accelerator 22, is shaped by a quadrupole lens 23, and irradiates a semiconductor wafer W arranged in a process chamber 31.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种结构简单，成本低廉的离子注入机。解决方案：在处理室11中设置含氧负离子基团的负离子源S. 热板41加热设定的负离子源S，高压电源12向加热源S施加电场。因此，从源S中取出氧负离子，高度单色的离子束为形成。形成的离子束由静电透镜21会聚，被后加速器22加速，由四极透镜23成形，并且照射布置在处理室31中的半导体晶片W.权利要求（C） 2006年，JPO＆NCIPI

7. 发明专利

JP2004116987A Air cleaner and treatment device 审中-公开
公开(公告)号：JP2004116987A
公开(公告)日：2004-04-15
申请号：JP2003307235
申请日：2003-08-29
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： SASAKI YOSHIAKI , SHINDO TAKEHIRO , FUJIWARA KAORU , SAITO MISAKO , HAYASHI TERUYUKI
IPC分类号： F24F7/00 , B01D46/42 , F24F7/06 , H01L21/02
摘要： PROBLEM TO BE SOLVED: To provide a cleaned air feeder and a treatment device capable of stabilizing performance of an air filter and prolonging its lifetime.
SOLUTION: This air cleaner is provided with a blower 16, an ULPA filter 17b or a HEPA filter arranged on the downstream of the blower 16 for eliminating particles in gas, and a rectifying member 18 arranged on the upstream or downstream of the blower 16 for compensating an uneven in-plane air speed distribution by the blower 16 into an even in-pane air speed distribution. The rectifying member 18 is provided with an uneven in-plane opening ratio, and an area with the low opening ratio in the rectifying member corresponds to an area with a high air speed of the blower 16.
COPYRIGHT: (C)2004,JPO

8. 发明专利

JP2013216923A Substrate processing system 审中-公开
标题翻译：基板加工系统
公开(公告)号：JP2013216923A
公开(公告)日：2013-10-24
申请号：JP2012085848
申请日：2012-04-04
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： HAYASHI TERUYUKI , ONO YUJI
IPC分类号： C23C14/24 , H01L51/50 , H05B33/10
摘要： PROBLEM TO BE SOLVED: To solve such a problem that when reusing a mask in a vacuum processing chamber, the mask stores heat and thermally expands.SOLUTION: A substrate processing system includes: a vacuum processing chamber that includes a substrate carry-in part 11 and a substrate discharge part 12 through which a substrate G is carried in and discharged, a mask carry-in part 13 and a mask discharge part 14 through which a mask 9 is carried in and discharged, an attachment mechanism 51 which attaches the mask 9 to the substrate G, a vacuum carrying mechanism 4 which carries the substrate G to the side of the substrate discharge part 12, and a detachment mechanism 52 which detaches the mask 9 from the substrate G at the side of the substrate discharge part 12; a discharge side load lock device 62 which discharges the mask 9 into the atmosphere; an atmospheric carrying mechanism 7 which carries the mask 9 discharged into the atmosphere to the side of the mask carry-in part; a cooling device 8 which cools the mask 9 discharged into the atmosphere; and a carry-in side load lock device 61 which carries the mask 9 into the vacuum processing chamber 1.
摘要翻译：要解决的问题：为了解决在真空处理室中重复使用掩模时的掩模，掩模存储热量并热膨胀。解决方案：基板处理系统包括：真空处理室，其包括基板搬入部11 以及衬底G被放置并放出的衬底放电部分12，掩模携带部分13和掩模放电部分14，掩模9通过该掩模放入部分14被放置并排出;安装机构51，其将掩模9 将基板G承载在基板排出部12的侧面的基板G，将基板G从基板排出部12侧剥离的脱离机构52，将面罩9排放到大气中的排出侧装载锁定装置62; 携带将排出到大气中的面罩9携带到面罩携带部分侧的大气运送机构7; 冷却装置8，其冷却排出到大气中的面罩9; 以及携带面罩9进入真空处理室1的携带侧负载锁定装置61。

9. 发明专利

JP2012241237A Film deposition apparatus 审中-公开
标题翻译：胶片沉积装置
公开(公告)号：JP2012241237A
公开(公告)日：2012-12-10
申请号：JP2011112672
申请日：2011-05-19
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KANEKO HIROYOSHI , ONO YUJI , HAYASHI TERUYUKI , KUWADA HIROTAKA , OSHIMA SUMI
IPC分类号： C23C14/04 , C23C14/24
摘要： PROBLEM TO BE SOLVED: To provide a film deposition apparatus improving the film thickness uniformity of a film to be vapor-deposited on a substrate.SOLUTION: The film deposition apparatus 10 includes a processing chamber 12 for housing a substrate S, a stage 14 for holding the substrate S, and a vapor deposition head 18c having a plurality of nozzles 16c for blowing gas G containing a vapor deposition material onto the substrate S. The nozzles 16c are arrayed along a Y-direction. The film deposition apparatus 10 further includes: a driving device 22 for driving at least one of the vapor deposition head 18c and the stage 14 so that the substrate S is relatively moved along an X-direction crossing the Y-direction with respect to the nozzles 16c; and a frame F for covering a side face Sa of the substrate S along the Y-direction and a side face Sb of the substrate S along the X-direction.
摘要翻译：要解决的问题：提供一种提高在基板上气相沉积的膜的膜厚均匀性的成膜装置。＆lt; P＆gt;解决方案：成膜装置10包括用于容纳基板S的处理室12，用于保持基板S的台14和具有多个喷嘴16c的蒸镀头18c，该喷嘴16c用于吹送包含气相沉积材料到基板S.喷嘴16c沿Y方向排列。成膜装置10还包括：用于驱动蒸镀头18c和台14中的至少一个的驱动装置22，使得基板S相对于喷嘴沿与Y方向交叉的X方向相对移动 16C; 以及用于沿着Y方向覆盖基板S的侧面Sa和沿着X方向覆盖基板S的侧面Sb的框架F. 版权所有（C）2013，JPO＆INPIT

10. 发明专利

JP2012174891A Patterning method and manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制图方法和制造方法
公开(公告)号：JP2012174891A
公开(公告)日：2012-09-10
申请号：JP2011035594
申请日：2011-02-22
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： ISHIKAWA HIROSHI , HAYASHI TERUYUKI , MATSUOKA TAKAAKI , ONO YUJI
IPC分类号： H01L21/3065 , H01L21/3213 , H01L21/768
CPC分类号： H01L21/30604 , H01L21/0217 , H01L21/02274 , H01L21/0337 , H01L21/308 , H01L21/31111 , H01L21/32139 , H01L21/67178 , H01L21/67184 , H01L21/6719
摘要： PROBLEM TO BE SOLVED: To perform specific patterning of a mask appropriately when a processed film on a substrate is etched under low temperature environment where the temperature of a substrate is 100°C or lower.SOLUTION: An antireflection film 401 and a resist pattern 402 are formed on the processed film 400 of a wafer W (Fig. 10(a)). The resist pattern 402 is trimmed and the antireflection film 401 is etched (Fig. 10(b)). Plasma processing is performed while maintaining the temperature of the wafer W at 100°C or lower, and a silicon nitride film 404 having film stress of 100 MPa or less is deposited on the resist pattern 402 and an antireflection film pattern 403 (Fig. 10(c)). The silicon nitride film 404 is etched and the resist pattern 402 and the antireflection film pattern 403 are removed, and a silicon nitride film pattern 405 is formed on the processed film 400 (Fig. 10(d)).
摘要翻译：要解决的问题：当在基板的温度为100℃或更低的低温环境下蚀刻在基板上的加工膜被适当地进行掩模的特定图案化时。解决方案：在晶片W的处理膜400上形成抗反射膜401和抗蚀图案402（图10（a））。修整抗蚀剂图案402并蚀刻抗反射膜401（图10（b））。在将晶片W的温度保持在100℃以下的同时进行等离子体处理，并且在抗蚀剂图案402和抗反射膜图案403上沉积膜应力为100MPa以下的氮化硅膜404（图10 （C））。蚀刻氮化硅膜404，去除抗蚀剂图案402和抗反射膜图案403，并且在处理膜400上形成氮化硅膜图案405（图10（d））。版权所有（C）2012，JPO＆INPIT

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