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1. 发明专利

JP2013012710A Piezoelectric film element, piezoelectric film device and piezoelectric film element manufacturing method 审中-公开
标题翻译：压电薄膜元件，压电薄膜器件和压电薄膜元件制造方法
公开(公告)号：JP2013012710A
公开(公告)日：2013-01-17
申请号：JP2012044290
申请日：2012-02-29
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： MIZUTANI TOMOYA , UNNO TSUNEHIRO , SHIBATA KENJI
IPC分类号： H01L41/09 , H01G5/16 , H01L41/18 , H01L41/187 , H01L41/22
摘要： PROBLEM TO BE SOLVED: To provide a piezoelectric film element incorporating an alkali niobium oxide containing piezoelectric film which has an increased film thickness and excels in piezoelectric characteristic, and a piezoelectric film device and a manufacturing method therefor.SOLUTION: In a piezoelectric film element comprising a substrate 2, a ground layer 3 formed on the substrate 2 and a piezoelectric film 4 of an alkali niobium oxide based perovskite structure formed on the ground layer 3, the piezoelectric film 4 includes a first piezoelectric film 5 preferentially oriented in a (001) plane direction and a second piezoelectric film 6 which is grown on the first piezoelectric film 5 by a hydrothermal crystallization method, whose crystal structure being one of pseudo-cubic, tetragonal and orthogonal, or coexistence thereof, and is preferentially oriented in a specific plane direction.
摘要翻译：解决的问题：提供一种结合了具有增加的膜厚度和压电特性优异的含碱性氧化铌的压电膜的压电膜元件，以及压电膜器件及其制造方法。解决方案：在基片2，形成在基片2上的接地层3和形成在接地层3上的基于碱铌氧化物的钙钛矿结构的压电膜4的压电膜元件中，压电膜4包括在（001）面方向上优先取向的第一压电膜5和通过水热结晶法在第一压电膜5上生长的第二压电膜6，其晶体结构是假立方，四边形和正交或共存之一并且优选地在特定平面方向上定向。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2012074665A Light-emitting diode 审中-公开
标题翻译：发光二极管
公开(公告)号：JP2012074665A
公开(公告)日：2012-04-12
申请号：JP2010275210
申请日：2010-12-10
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： MIZUTANI TOMOYA , UNNO TSUNEHIRO
IPC分类号： H01L33/38 , H01L33/22
CPC分类号： H01L27/153 , H01L33/405 , H01L33/42 , H01L33/62 , H01L2224/14 , H01L2224/16225 , H01L2924/01322 , H01L2933/0066 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting diode having good heat radiation property and light emission characteristics, and capable of realizing high productivity and yields.SOLUTION: A light-emitting diode 100 has a wiring layer 31, and a semiconductor light-emitting element 10 on the wiring layer 31. The semiconductor light-emitting element 10 has a semiconductor light-emitting layer 6, a transparent conductive layer 8, a metal reflective layer 9, a transparent insulation film 11, and a first electrode part 21 and a second electrode part 22 provided on the wiring layer 31 side of the transparent insulation film 11 via separation regions 18 and 19 and electrically connected to the wiring layer 31. The first electrode part 21 is electrically connected to a first semiconductor layer 5 via the transparent conductive layer 8 by a first contact part 14. The second electrode part 22 is electrically connected to a second semiconductor layer 3 by a second contact part 15 provided to penetrate through the transparent insulation film 11 and to be insulated from and penetrate through the transparent conductive layer 8, the first semiconductor layer 5, and an active layer 4.
摘要翻译：要解决的问题：提供具有良好的散热性和发光特性的发光二极管，并且能够实现高生产率和产率。解决方案：发光二极管100在布线层31上具有布线层31和半导体发光元件10.半导体发光元件10具有半导体发光层6，透明导电层8，金属反射层9，透明绝缘膜11，以及经由分离区域18和19设置在透明绝缘膜11的布线层31侧的第一电极部分21和第二电极部分22，并且电连接到布线层31.第一电极部分21通过第一接触部分14经由透明导电层8电连接到第一半导体层5.第二电极部分22通过第二接触电连接到第二半导体层3 设置为穿透透明绝缘膜11并且与透明导电层8，第一半导体层5和活性物体绝缘并穿透透明导电层8的部分15 版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2007189060A Semiconductor light-emitting element, junction substrate therefor, and manufacturing method thereof 有权
标题翻译：半导体发光元件及其制造基板及其制造方法
公开(公告)号：JP2007189060A
公开(公告)日：2007-07-26
申请号：JP2006005948
申请日：2006-01-13
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： AKIMOTO KATSUYA , ARAI MASAHIRO , UNNO TSUNEHIRO
IPC分类号： H01L33/30 , H01L33/34 , H01L33/40
摘要： PROBLEM TO BE SOLVED: To reduce the removal time of a starting substrate, and to reduce nonuniformity in etching. SOLUTION: A junction substrate for semiconductor light-emitting elements is manufactured by laminating an epitaxial substrate Be having a semiconductor layer 40 containing at least a luminous layer formed at the first main surface side of the starting substrate, and a plurality of grooves 38 formed from the first main surface side of a semiconductor layer to the inside of the starting substrate, and a permanent substrate formed by a material differing from that of the starting substrate. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：减少起始衬底的去除时间，并减少蚀刻中的不均匀性。解决方案：用于半导体发光元件的接合衬底通过层叠具有至少包含在起始衬底的第一主表面侧形成的发光层的半导体层40的外延衬底Be和多个沟槽 38由半导体层的第一主表面侧到起始衬底的内部形成，以及由与起始衬底不同的材料形成的永久衬底。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2007173530A Semiconductor light-emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：JP2007173530A
公开(公告)日：2007-07-05
申请号：JP2005369243
申请日：2005-12-22
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： UNNO TSUNEHIRO , AKIMOTO KATSUYA , ARAI MASAHIRO
IPC分类号： H01L33/10 , H01L33/14 , H01L33/30 , H01L33/34 , H01L33/38
CPC分类号： H01L33/145 , H01L33/0079 , H01L33/38 , H01L33/405 , H01L2224/14
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting diode which is highly efficient and capable of passing through a large electric current. SOLUTION: The light-emitting diode has at least a p-type clad layer 4, an active layer 3, a light-emitting layer in which an n-type clad layer 2 is laminated, a current-blocking portion 14 partially formed in the center on the light-emitting layer portion, a current dispersion layer 15 formed in the surface of the n-type clad layer 2 and the current-blocking portion 14, an upper electrode 16 formed in the surface of the current dispersion layer 15 in the front surface side of a high thermal conductivity substrate 10, and a lower electrode 13 formed in the rear surface side of the high thermal conductivity substrate 10. A light-reflecting layer 7 is formed between the high thermal conductivity substrate 10 and the light-emitting layer, a partial electrode 6 is formed in a portion located under the current-blocking portion 14 on the front surface of the light-reflecting layer 7, and a current-blocking portion 5 is formed on the front surface of the light-reflecting layer 7, other than the portion where the partial elctrode 6 are formed. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供高效且能够通过大电流的发光二极管。解决方案：发光二极管至少具有p型覆盖层4，有源层3，层叠n型覆盖层2的发光层，部分地形成电流阻挡部14 形成在发光层部分的中心，形成在n型覆盖层2和电流阻挡部分14的表面中的电流分散层15，形成在电流分散层的表面中的上部电极16 15，高导热性基板10的表面侧形成有下部电极13，在高导热性基板10的背面侧形成有下部电极13，在高导热性基板10和发光层，在光反射层7的前表面上的电流阻挡部14的下方的部分形成有部分电极6，在光的前表面形成有电流阻挡部5 反射层7，除此之外形成部分电极6的部分。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2005228839A Method for manufacturing piezoelectric thin film 审中-公开
标题翻译：制造压电薄膜的方法
公开(公告)号：JP2005228839A
公开(公告)日：2005-08-25
申请号：JP2004034362
申请日：2004-02-12
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： SHIBATA KENJI , UNNO TSUNEHIRO , YAMADA AYANO
IPC分类号： C30B25/02 , C30B29/32 , H01L41/09 , H01L41/18 , H01L41/187 , H01L41/22 , H01L41/316
摘要： PROBLEM TO BE SOLVED: To manufacture a piezoelectric thin film having satisfactory piezoelectric characteristics and voltage resistant characteristics at low costs by increasing the amount of a (001) plane component in a crystal orientation, in the piezoelectric thin film having a perovskite type structure. SOLUTION: The piezoelectric thin film having the perovskite type structure or a Bi laminar structure is grown at prescribed growth temperature before the piezoelectric thin film is cooled to prescribed medium temperature. In a cooling process from the prescribed growth temperature to the prescribed medium one, cooling is forcedly made from a substrate side. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题为了通过增加晶体取向中的（001）面成分的量，以低成本制造具有令人满意的压电特性和耐电压特性的压电薄膜，在具有钙钛矿型的压电薄膜结构体。解决方案：将压电薄膜冷却到规定介质温度之前，以规定的生长温度生长具有钙钛矿型结构或Bi层状结构的压电薄膜。在从规定的生长温度到规定的介质的冷却过程中，从基板侧强制进行冷却。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2005228838A Piezoelectric thin film element 审中-公开
标题翻译：压电薄膜元件
公开(公告)号：JP2005228838A
公开(公告)日：2005-08-25
申请号：JP2004034361
申请日：2004-02-12
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： SHIBATA KENJI , UNNO TSUNEHIRO , YAMADA AYANO
IPC分类号： B41J2/045 , B41J2/055 , H01L21/8246 , H01L27/105 , H01L37/02 , H01L41/09 , H01L41/18 , H01L41/187
摘要： PROBLEM TO BE SOLVED: To obtain a piezoelectric thin film element having a PZT piezoelectric thin film, where a piezoelectric constant equivalent to bulk ceramics PZT can be obtained.
SOLUTION: In the piezoelectric thin film element having a piezoelectric thin film 3 of a metallic oxide having a perovskite structure sandwiched between upper and lower electrodes 4 and 2 on a substrate 1, the sum of an orientation rate in the direction of an (a) axis of the piezoelectric thin film 3 and that in the direction of (a) (b) axes is ≥90% to a direction vertical to the surface of the substrate 1.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了获得具有PZT压电薄膜的压电薄膜元件，其中可得到等效于体陶瓷PZT的压电常数。解决方案：在具有夹在基板1上的上下电极4和2之间的具有钙钛矿结构的金属氧化物的压电薄膜3的压电薄膜元件中，取向率在压电薄膜3的轴线（a）和（a）（b）方向的轴线相对于与基板1的表面垂直的方向为≥90％。版权所有（C）2005，JPO＆NCIPI

7. 发明专利

JP2005105394A Method for forming ferroelectric thin film 审中-公开
标题翻译：形成薄膜薄膜的方法
公开(公告)号：JP2005105394A
公开(公告)日：2005-04-21
申请号：JP2003343936
申请日：2003-10-02
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： SHIBATA KENJI , UNNO TSUNEHIRO , WATANABE KAZUTOSHI , YAMADA AYANO
IPC分类号： C23C16/46 , C23C16/40 , C23C16/52 , H01L21/316 , H01L21/8246 , H01L27/105 , H01L41/18 , H01L41/316 , H01L41/39 , H01L41/24
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a ferroelectric thin film of high quality consisting of crystal grains with small and uniform sizes, with a MOCVD technique in a short period of time (with a high growth rate). SOLUTION: This film-forming method includes a step of growing the ferroelectric thin film with the MOCVD technique at a growing rate of 0.05 nm/sec or less during an early growing stage between the time of starting the growth and a time when the film thickness reaches 10 nm; or includes a step of slowly increasing the growing rate from the time of starting the growth in a growing process between the time of starting the growth and a time when the film thickness reaches 10 nm. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于在短时间内（具有高生长速率）的MOCVD技术生长由具有小而均匀尺寸的晶粒组成的高质量的铁电薄膜的方法。解决方案：该成膜方法包括在开始生长时间的早期生长阶段之间以0.05nm / sec或更小的生长速率以MOCVD技术生长铁电薄膜的步骤，膜厚度达到10nm; 或包括从开始生长时间到膜厚达到10nm的时间之间的生长过程中开始生长时间缓慢增加生长速率的步骤。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2004319672A Light emitting diode 审中-公开
标题翻译：发光二极管
公开(公告)号：JP2004319672A
公开(公告)日：2004-11-11
申请号：JP2003110039
申请日：2003-04-15
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： KONNO TAIICHIRO , UNNO TSUNEHIRO , SHIBATA KENJI
IPC分类号： H01L33/30 , H01L33/42 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To obtain an inexpensive electrode structure capable of solving a problem that a pad electrode formed on a transparent conductive film is stripped in an LED having a structure employing a transparent conductive film of a metal oxide as a current dispersion layer. SOLUTION: In a light emitting diode where a pn junction single heterostructure or double heterostructure becoming a light emitting part 11 is formed on a semiconductor substrate 1, a transparent conductive film 7 of a metal oxide is formed thereon as a current dispersion layer, and metal electrodes 8 and 9 are formed for conduction on the surface side and the rear surface side, the surface side electrode 8 on the transparent conductive film has a multilayer structure including a lowermost layer 8a of Ti, an uppermost layer 8b of Au, and an intermediate layer 8c of Ni or Al. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题为了获得廉价的电极结构，能够解决在具有使用金属氧化物的透明导电膜作为电流分散体的结构的LED中剥离形成在透明导电膜上的焊盘电极的问题层。解决方案：在半导体衬底1上形成pn结单异质结构或双异质结构成为发光部分11的发光二极管中，形成金属氧化物的透明导电膜7作为电流分散层，并且在表面侧和背面侧形成用于导电的金属电极8,9，透明导电膜上的表面侧电极8具有包括Ti的最下层8a，Au的最上层8b，和Ni或Al的中间层8c。版权所有（C）2005，JPO＆NCIPI

9. 发明专利

JP2004200325A Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：JP2004200325A
公开(公告)日：2004-07-15
申请号：JP2002365792
申请日：2002-12-17
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： KONNO TAIICHIRO , UNNO TSUNEHIRO
IPC分类号： H01L33/30 , H01L33/38 , H01L33/42 , H01S5/042 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device which has a structure using a transparent conductive film of metal oxide, is equipped with a pad electrode that is formed on the metal oxide film and hardly separated off, and capable of reducing a forward operating voltage. SOLUTION: A light emitting layer 3 is formed above a substrate 1, the transparent conductive film 6 of metal oxide is formed as a current dispersion layer above the light emitting layer 3, and a first electrode is formed on the transparent conductive film 6 for carrying a current for the formation of the semiconductor light emitting device. The first electrode is formed of a plurality of metal layers composed of a metal layer 9 as the uppermost layer used for bonding and two or more metal layers 7 and 8 formed to come into contact with the transparent electrode film. COPYRIGHT: (C)2004,JPO&NCIPI
摘要翻译：要解决的问题：为了提供具有使用金属氧化物的透明导电膜的结构的半导体发光器件，配备有形成在金属氧化物膜上并且难以分离的焊盘电极，并且能够降低正向工作电压。解决方案：在基板1的上方形成发光层3，在发光层3的上方形成金属氧化物的透明导电膜6作为电流分散层，在透明导电膜上形成第一电极用于承载用于形成半导体发光器件的电流。第一电极由多个金属层形成，金属层由作为用于接合的最上层的金属层9和形成为与透明电极膜接触的两个或更多个金属层7和8组成。版权所有（C）2004，JPO＆NCIPI

10. 发明专利

JP2003264313A SEMICONDUCTOR LIGHT EMITTING ELEMENT 审中-公开
公开(公告)号：JP2003264313A
公开(公告)日：2003-09-19
申请号：JP2002063661
申请日：2002-03-08
申请人： HITACHI CABLE
发明人： KONNO TAIICHIRO , UNNO TSUNEHIRO , SHIBATA KENJI
IPC分类号： H01L33/30 , H01L33/42 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a high luminance low price semiconductor light emitting element in which the exfoliation of a metal oxide based transparent conductive layer from an epitaxial layer is controlled. SOLUTION: The semiconductor light emitting element comprises a light emitting part layer 2 composed of an active layer 3 sandwiched by a first conductivity type clad layer 2 and a second conductivity type clad layer 4, an optional current distribution layer 5, a transparent conductive layer 7 of metal oxide film, and a surface electrode 9 formed on a first conductivity type substrate wherein a layer 6 exhibiting lattice inconsistency to the second conductivity type clad layer 4 is formed between the second conductivity type clad layer 4 and the transparent conductive layer 7. COPYRIGHT: (C)2003,JPO

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