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1. 发明专利

JP2013187367A Method for manufacturing gallium nitride template substrate and gallium nitride template substrate 有权
标题翻译：硝酸锌模板和氮化镓模板衬底的制造方法
公开(公告)号：JP2013187367A
公开(公告)日：2013-09-19
申请号：JP2012051531
申请日：2012-03-08
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： MATSUDA MICHIKO , FUJIKURA TSUNEAKI , KONNO TAIICHIRO
IPC分类号： H01L21/205 , C23C16/34
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a gallium nitride template substrate, which is capable of inexpensively and efficiently manufacturing a gallium nitride template substrate having quality equal to or higher than that when metal organic vapor phase epitaxy is used, and to provide a gallium nitride template substrate.SOLUTION: In the method for manufacturing a gallium nitride template substrate 10, at least a nucleation layer 12 made of aluminum nitride (AlN) and a buffer layer 13 made of gallium nitride (GaN) are sequentially grown on a sapphire substrate as a base substrate 11 by hydride vapor phase epitaxy. When the nucleation layer 12 is grown, a molar ratio (V/III ratio) of a group V raw material to a group III raw material is set to 0.5-3 inclusive.
摘要翻译：要解决的问题：提供一种制造氮化镓模板基板的方法，其能够廉价且有效地制造质量等于或高于使用金属有机气相外延时的氮化镓模板基板，并且提供氮化镓模板衬底。在制造氮化镓模板衬底10的方法中，至少由氮化铝（AlN）制成的成核层12和由氮化镓（GaN）制成的缓冲层13依次生长在蓝宝石衬底作为基底衬底11通过氢化物气相外延生长。当成核层12生长时，将V族原料与III族原料的摩尔比（V / III比）设定为0.5-3（含）。

2. 发明专利

JP2013187366A Nitride semiconductor manufacturing method 审中-公开
标题翻译：氮化物半导体制造方法
公开(公告)号：JP2013187366A
公开(公告)日：2013-09-19
申请号：JP2012051529
申请日：2012-03-08
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： FUJIKURA TSUNEAKI , KONNO TAIICHIRO , MATSUDA MICHIKO
IPC分类号： H01L21/205 , C23C16/34 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor manufacturing method which achieves high growth reproducibility and which can reduce a manufacturing time while inhibiting deterioration in crystallinity of a nitride semiconductor layer.SOLUTION: A nitride semiconductor manufacturing method comprises: a preparation process of setting a base substrate composed of sapphire or silicon carbide in a growth device; a cleaning process of cleaning the growth device in a state of setting the base substrate in the growth device; and, following the cleaning process, a growth process of sequentially growing a buffer layer and a nitride semiconductor layer on the base substrate. The cleaning process is performed within a temperature range of not less than 900°C and not more than 1200°C. Growth of the buffer layer in the growth process is performed within a temperature range of not less than 900°C.
摘要翻译：要解决的问题：提供一种氮化物半导体制造方法，其具有高生长再现性，并且可以减少制造时间，同时抑制氮化物半导体层的结晶度的劣化。解决方案：氮化物半导体制造方法包括：在生长装置中由蓝宝石或碳化硅组成的基底基板; 在将生长装置中的基底基板设定的状态下清洗生长装置的清洗工序; 并且在清洁处理之后，在基底基板上依次生长缓冲层和氮化物半导体层的生长过程。清洗过程在不低于900℃且不超过1200℃的温度范围内进行。生长过程中缓冲层的生长在不低于900℃的温度范围内进行。

3. 发明专利

JP2013058741A Metal chloride gas generating device, hydride gas phase growing device, and nitride semiconductor template 审中-公开
标题翻译：金属氯化物气体发生装置，氢化气相生长装置和氮化物半导体模板
公开(公告)号：JP2013058741A
公开(公告)日：2013-03-28
申请号：JP2012174592
申请日：2012-08-07
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： KONNO TAIICHIRO , FUJIKURA TSUNEAKI , MATSUDA MICHIKO
IPC分类号： H01L21/205 , C23C16/448 , C30B25/14 , C30B29/38 , H01L33/32
CPC分类号： H01L21/0262 , C30B25/08 , C30B25/14 , C30B29/403 , C30B29/406 , H01L21/0254 , H01L21/02576 , H01L21/02581 , H01L29/045 , H01L29/2003 , H01L29/207 , H01L29/36
摘要： PROBLEM TO BE SOLVED: To provide a metal chloride gas generating device with unintentional mixture of impurities restrained, a hydride gas phase growing device, and a nitride semiconductor template.SOLUTION: An HVPE device 1 as a metal chloride gas generating device comprises: a cylindrical reactor 2 having a tank (housing part) 7 housing Ga (metal) 7a on an upstream side, and having a growing part 3b on which a growing substrate 11 is arranged on a downstream side; a translucent gas introduction pipe 60 arranged from an upstream side end 64 having a gas introduction port 64a to the growing part 3b via a tank 7, introducing gas from the upstream side end 64, supplying it to the tank 7, and supplying metal chloride gas generated by reacting the gas with Ga in the tank 7 to the growing part 3b; and heat shielding plates 9A and 9B arranged in the reactor 2 and thermally shielding the upstream side end 64 of the gas introduction pipe 60 from the growing part 3b. The gas introduction pipe 60 has such a structure that it is bent between the upstream side end 64 and the heat shielding plate 9B.
摘要翻译：要解决的问题：提供一种金属氯化物气体发生装置，其具有非限制性的杂质混合物，氢化物气相生长装置和氮化物半导体模板。解决方案：作为金属氯化物气体发生装置的HVPE装置1包括：圆筒形反应器2，其具有在上游侧容纳Ga（金属）7a的罐（壳体部分）7，并且具有生长部分3b，生长基板11布置在下游侧; 从具有气体导入口64a的上游侧端部64经由槽7配置到生长部3b的半透明气体导入管60，从上游侧端部64导入气体，将其供给到罐7，供给金属氯化物气体通过使罐7中的气体与Ga反应生长部3b; 以及布置在反应器2中的热屏蔽板9A和9B，并且从生长部分3b对气体导入管60的上游侧端部64进行热屏蔽。气体导入管60具有在上游侧端部64与隔热板9B之间弯曲的结构。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2011061185A Epitaxial wafer for light emitting element and light emitting element 审中-公开
标题翻译：用于发光元件和发光元件的外延波形
公开(公告)号：JP2011061185A
公开(公告)日：2011-03-24
申请号：JP2010048788
申请日：2010-03-05
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： TAKEUCHI TAKASHI , KONNO TAIICHIRO
IPC分类号： H01L33/30
摘要： PROBLEM TO BE SOLVED: To provide an epitaxial wafer for light emitting elements and a light emitting element that are improved in their yield and have good reliability.
SOLUTION: The epitaxial wafer for light emitting elements includes: an n-type substrate 1; and at least an n-type clad layer 4, a light emitting layer 5 having a quantum well structure, and a p-type clad 7 stacked on the substrate. The n-type clad layer 4 includes an epitaxial layer doped with a mixture of two or more n-type dopants including Si and has a thickness not less than 250 nm and not more than 750 nm.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供发光元件的外延晶片和发光元件，其产率提高并且具有良好的可靠性。解决方案：用于发光元件的外延晶片包括：n型衬底1; 以及至少具有n型覆盖层4，具有量子阱结构的发光层5和堆叠在基板上的p型覆层7。 n型覆盖层4包括掺杂有两种或更多种包括Si的n型掺杂剂的混合物的外延层，并且具有不小于250nm且不大于750nm的厚度。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2009252860A Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：JP2009252860A
公开(公告)日：2009-10-29
申请号：JP2008096803
申请日：2008-04-03
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： KONNO TAIICHIRO
IPC分类号： H01L33/06 , H01L33/10 , H01L33/14 , H01L33/22 , H01L33/30 , H01L33/36 , H01L33/38
摘要： PROBLEM TO BE SOLVED: To provide a low-cost semiconductor light emitting element with high light emission output. SOLUTION: An epitaxial layer having at least light extraction layers (window layers) 17 and 18, and a light emission portion having clad layers 5 and 7 and an active layer 6 is formed on a semiconductor substrate, an ohmic contact joint portion 11 for reduction in contact resistance is arranged on a part of the epitaxial layer, and a reflective metal layer 12 is formed which is connected to the ohmic contact portion 11 to reflect light from the light emission portion. A support substrate 13 is joined through the reflective metal layer 12, the semiconductor substrate is removed, and while a first electrode 15 is formed on the epitaxial layer side, a second electrode 16 is formed on the side of the support substrate 13. Uneven inclined surfaces are formed on surfaces of the light extraction layers 17 and 18 disposed above the light emission portion, and each of the inclined surfaces comprises an inclined surface 17a and an inclined surface 18a differing in angle of inclination. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供具有高发光输出的低成本半导体发光元件。解决方案：在半导体衬底上形成至少具有光提取层（窗口层）17和18的外延层以及具有覆层5和7以及有源层6的发光部分，欧姆接触部分在外延层的一部分上配置有用于降低接触电阻的电极11，并且形成反射金属层12，反射金属层12连接到欧姆接触部分11以反射来自发光部分的光。支撑基板13通过反射金属层12接合，去除半导体基板，而在外延层侧形成第一电极15，在支撑基板13侧形成第二电极16.不均匀倾斜在设置在发光部分上方的光提取层17和18的表面上形成表面，并且每个倾斜表面包括倾斜表面17a和倾斜角度不同的倾斜表面18a。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2008103627A Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：JP2008103627A
公开(公告)日：2008-05-01
申请号：JP2006286485
申请日：2006-10-20
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： KONNO TAIICHIRO , IIZUKA KAZUYUKI , ARAI MASAHIRO
IPC分类号： H01L33/06 , H01L33/22 , H01L33/30 , H01L33/40 , H01L33/60
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element in which surface roughening is performed so that a light take-out layer does not become thin. SOLUTION: In the semiconductor light emitting element having a plurality of semiconductor layers including an active layer 6 and a light take-out layer 4, and a reflective metal film layer 11, the light take-out layer 4 is composed of a plurality of layers 23 and 24 having different composition ratios and protrusions and recesses 22 for roughening a major surface S are formed only over the plurality of layers 23 and 24. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供其中执行表面粗糙化以使得光取出层不变薄的半导体发光元件。解决方案：在具有包括有源层6和光取出层4的多个半导体层的半导体发光元件和反射金属膜层11中，光取出层4由具有不同组成比的多个层23和24以及用于粗化主表面S的突出和凹陷22仅形成在多个层23和24上。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2007096168A Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：JP2007096168A
公开(公告)日：2007-04-12
申请号：JP2005285931
申请日：2005-09-30
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： ARAI MASAHIRO , KONNO TAIICHIRO , IIZUKA KAZUYUKI , AKIMOTO KATSUYA
IPC分类号： H01L33/12 , H01L33/30 , H01L33/42
摘要： PROBLEM TO BE SOLVED: To obtain a high luminance, low driving voltage semiconductor light emitting element in which deterioration in emission output and rising of driving voltage with time can be suppressed. SOLUTION: A light emitting portion consisting at least of an n-type clad layer 3, an active layer 4, and a p-type clad layer 5 is formed on a substrate; a thin film As based p-type contact layer 7 having a p-type dopant concentration of 1×10 19 /cm 3 or above and added with a dopant of a different material from that of the dopant added to the p-type clad layer is formed above the light emitting portion, and a current dispersion layer 8 composed of a metal oxide material is formed above the p-type contact layer 7. Furthermore, a buffer layer 6 composed of a p-type conductive group III/V semiconductor containing C (carbon) intentionally or inevitably and having a film thickness not thinner than the diffusion length L of the dopant added to the p-type contact layer is provided between the p-type clad layer 5 and the p-type contact layer 7. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题为了获得能够抑制发光输出的劣化和驱动电压随时间的上升的高亮度，低驱动电压的半导体发光元件。解决方案：至少由n型覆盖层3，有源层4和p型覆盖层5构成的发光部分形成在基板上; 具有p型掺杂剂浓度为1×10 / cm 3 / SP> 3或更高的薄膜As基p型接触层7，并加入不同的掺杂剂在发光部的上方形成添加到p型覆盖层的掺杂剂的材料，在p型接触层7的上方形成由金属氧化物材料构成的电流分散层8.此外，缓冲层由p型导电性III / V族半导体组成的包含C（碳）的有意或不可避免的，具有不小于添加到p型接触层的掺杂剂的扩散长度L的膜厚的薄膜6，型覆盖层5和p型接触层7.版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2007096152A Semiconductor light-emitting device with transparent conductive film 有权
标题翻译：具有透明导电膜的半导体发光器件
公开(公告)号：JP2007096152A
公开(公告)日：2007-04-12
申请号：JP2005285822
申请日：2005-09-30
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： KONNO TAIICHIRO , IIZUKA KAZUYUKI , ARAI MASAHIRO
IPC分类号： H01L33/12 , H01L33/30 , H01L33/42
CPC分类号： H01L33/14 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02546 , H01L33/02 , H01L33/025
摘要： PROBLEM TO BE SOLVED: To obtain a semiconductor light-emitting device capable of preventing decrease in light-emitting output in time and increase in a driving voltage in driving the semiconductor light-emitting device in addition to high luminance and low driving voltage. SOLUTION: In the light-emitting device, a light-emitting portion consisting of at least an n-type cladding layer 4, an active layer 5 and a p-type cladding layer 6 is formed on a semiconductor substrate 1, and an As contact layer 7 with heavily-doped p-type dopant Zn is formed on the upper surface of the light-emitting portion, and a current dispersion layer consisting of a transparent conductive film of a metal oxide material is formed on the contact layer 7. This device has a buffer layer consisting of a buffer layer portion of at least two layers or more and having the difference in material or composition between the adjacent buffer layer portions, between the contact layer 7 and the p-type cladding layer 6. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：为了获得能够防止在驱动半导体发光器件的时候发光输出时间的降低和驱动电压的升高以及高亮度和低驱动电压的半导体发光器件。解决方案：在发光器件中，在半导体衬底1上形成至少由n型包覆层4，有源层5和p型包覆层6组成的发光部分，在发光部分的上表面上形成具有重掺杂p型掺杂剂Zn的As接触层7，并且在接触层7上形成由金属氧化物材料的透明导电膜构成的电流分散层该装置具有缓冲层，该缓冲层由至少两层以上的缓冲层部分组成，并且在接触层7和p型覆层6之间具有相邻缓冲层部分之间的材料或组成的差异。 P>版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2007088297A Semiconductor light emitting element 审中-公开
标题翻译：半导体发光元件
公开(公告)号：JP2007088297A
公开(公告)日：2007-04-05
申请号：JP2005276744
申请日：2005-09-22
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： IIZUKA KAZUYUKI , KONNO TAIICHIRO , ARAI MASAHIRO
IPC分类号： H01L21/205 , H01L33/06 , H01L33/10 , H01L33/30
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element of high yield, capable of suppressing secular degradation in light emission output and rising of a driving voltage. SOLUTION: On a semiconductor substrate 1 of the semiconductor light emitting element, at least an n-type clad layer 3, an active layer 4, a p-type clad layer 5, and a p-type GaP current dispersion layer 60, are crystallized and grown. The side close to the p-type clad layer 5 of the p-type GaP current dispersion layer 60 is a first p-type GaP current dispersion layer 9 whose main dopant is Mg. The side away from the p-type clad layer 5 is a second p-type GaP current dispersion layer 10 whose main dopant is Zn. The main dopant of the p-type clad layer 5 is Mg. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种高产率的半导体发光元件，能够抑制发光输出的长期劣化和驱动电压的上升。解决方案：在半导体发光元件的半导体衬底1上，至少包含n型覆盖层3，有源层4，p型覆盖层5和p型GaP电流分散层60 ，结晶生长。靠近p型GaP电流分散层60的p型覆盖层5的一侧是主要掺杂剂为Mg的第一p型GaP电流分散层9。远离p型覆盖层5的一侧是主要掺杂剂为Zn的第二p型GaP电流分散层10。 p型覆盖层5的主要掺杂剂为Mg。版权所有（C）2007，JPO＆INPIT

10. 发明专利

JP2007042751A Semiconductor light emitting device 审中-公开
标题翻译：半导体发光器件
公开(公告)号：JP2007042751A
公开(公告)日：2007-02-15
申请号：JP2005223214
申请日：2005-08-01
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： KONNO TAIICHIRO , IIZUKA KAZUYUKI , ARAI MASAHIRO , FURUYA TAKASHI
IPC分类号： H01L33/10 , H01L33/30
CPC分类号： H01L33/14 , H01L33/02 , H01L33/04 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device which can prevent deterioration of relative output with time as well as a drop of reverse voltage (Vr) with time, and which is high in luminance and reliability. SOLUTION: The semiconductor light emitting device is provided with a first conductive clad layer 4, an undoped active layer 5, a second conductive clad layer 6, a second conductive inclusion layer 7, and a second conductive current dispersed layer 8. These elements are formed on a first conductive semiconductor substrate 1 in order. In this case, a dopant suppression layer 6a is provided in a part which is included in the second conductive clad layer 6, and is not in contact with the active layer 5 and the inclusion layer 7. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种可以防止相对输出随时间的劣化以及随时间的反向电压（Vr）的下降并且亮度和可靠性高的半导体发光器件。解决方案：半导体发光器件设置有第一导电覆盖层4，未掺杂的有源层5，第二导电覆盖层6，第二导电夹杂层7和第二导电电流分散层8.这些元件依次形成在第一导电半导体衬底1上。在这种情况下，在包含在第二导电覆盖层6中的部分中设置掺杂剂抑制层6a，不与有源层5和夹层7接触。（C）2007 ，JPO＆INPIT

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