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1. 发明专利

JP2014220357A スイッチング素子审中-公开
标题翻译：开关元件
公开(公告)号：JP2014220357A
公开(公告)日：2014-11-20
申请号：JP2013098228
申请日：2013-05-08
申请人：株式会社船井電機新応用技術研究所 , Funai Electric Advanced Applied Technology Research Institute Inc , 独立行政法人産業技術総合研究所 , National Institute Of Advanced Industrial & Technology , 船井電機株式会社 , Funai Electric Co Ltd
发明人： MASUDA YUICHIRO , FURUTA SHIGEO , TAKAHASHI TAKESHI , ONO MASATOSHI , NAITO YASUHISA
IPC分类号： H01L49/00
CPC分类号： H01L49/00
摘要：【課題】安定したスイッチング動作が可能なナノギャップ電極を備えるスイッチング素子を提供する。【解決手段】第1電極10及び第2電極20と、第1電極10と第2電極20との間に設けられ、第1電極10と第2電極20との間への所定電圧の印加により抵抗状態が切り替わるスイッチング現象を生じさせる間隙を有する電極間間隙部30と、を備え、第1電極10及び第2電極20はそれぞれ、土台部11,21を備え、第1電極10側の土台部11と、第2電極20側の土台部21と、はトンネル電流を発生可能な間隔を隔てて対向しており、第1電極10及び第2電極20の少なくとも一方は、土台部11,21同士の対向部分に、土台部11,21を構成する物質よりも融点が低い物質からなる低融点部12,22を備えることを特徴とする。【選択図】図1
摘要翻译：要解决的问题：提供具有能够稳定切换操作的纳米间隙电极的开关元件。解决方案：开关元件包括第一电极10和第二电极20以及设置在第一电极10之间的电极间间隙部分30 和第二电极20，并且具有用于在第一电极10和第二电极20之间施加预定电压时导致切换电阻状态的切换现象的间隙。第一电极10和第二电极20包括基部11 ，21。第一电极10的基部11和第二电极20的基部21经由能够产生隧道电流的间隙相对。第一电极10和第二电极20中的至少任一个包括低熔点部分12,22，其包含比构成基部11,21的物质的熔点低的物质， 21。

2. 发明专利

JP2012048780A Driving method of memory element, and storage device having memory element 有权
标题翻译：存储器元件的驱动方法和具有存储器元件的存储器件
公开(公告)号：JP2012048780A
公开(公告)日：2012-03-08
申请号：JP2010189133
申请日：2010-08-26
申请人： Funai Electric Advanced Applied Technology Research Institute Inc , Funai Electric Co Ltd , National Institute Of Advanced Industrial & Technology , 株式会社船井電機新応用技術研究所 , 独立行政法人産業技術総合研究所 , 船井電機株式会社
发明人： TAKAHASHI TAKESHI , MASUDA YUICHIRO , FURUTA SHIGEO , SUMIYA TORU , ONO MASATOSHI , HAYASHI YUTAKA , FUKUOKA TOSHIMI , SHIMIZU TETSUO , SOMU KUMARAGURUBARAN , SUGA HIROSHI , NAITO YASUHISA
IPC分类号： G11C13/00 , H01L27/10 , H01L27/105 , H01L45/00 , H01L49/00
CPC分类号： G11C13/0069 , G11C13/0002 , G11C2213/79 , H01L27/101
摘要： PROBLEM TO BE SOLVED: To provide a driving method of a memory element, enabling more stable switching operations.SOLUTION: A memory element 10 comprises: an insulating substrate 1; a first electrode 2 and a second electrode 3 arranged on the insulating substrate; and an electrode gap portion 4 with a nanometer-order gap to cause a change in resistance value between the first electrode and the second electrode. In a driving method of the memory element 10 which can shift from a predetermined low resistance state to a predetermined high resistance state and can shift from the high resistance state to the low resistance state, a current pulse is applied to the memory element from a constant current circuit for shifting from the high resistance state to the low resistance state.
摘要翻译：要解决的问题：提供一种存储元件的驱动方法，能够实现更稳定的开关操作。存储元件10包括：绝缘基板1; 布置在所述绝缘基板上的第一电极2和第二电极3; 以及具有纳米级间隙的电极间隙部分4，以引起第一电极和第二电极之间的电阻值的变化。在存储元件10的驱动方法中，可以从预定的低电阻状态转移到预定的高电阻状态并且可以从高电阻状态转变到低电阻状态，从存储元件的常数施加电流脉冲用于从高电阻状态转换到低电阻状态的电流电路。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2011176211A Switching element 有权
标题翻译：开关元件
公开(公告)号：JP2011176211A
公开(公告)日：2011-09-08
申请号：JP2010040306
申请日：2010-02-25
申请人： Funai Electric Advanced Applied Technology Research Institute Inc , Funai Electric Co Ltd , National Institute Of Advanced Industrial Science & Technology , 株式会社船井電機新応用技術研究所 , 独立行政法人産業技術総合研究所 , 船井電機株式会社
发明人： MASUDA YUICHIRO , FURUTA SHIGEO , TAKAHASHI TAKESHI , ONO MASATOSHI , SHIMIZU TETSUO , NAITO YASUHISA , SUGA HIROSHI , HORIKAWA MASAYO
IPC分类号： H01L49/02 , H01L27/10 , H01L29/66
摘要： PROBLEM TO BE SOLVED: To provide a three-terminal switching element composed of a simpler structure and capable of stably performing switching operation. SOLUTION: The switching element 100 includes an insulating substrate 10, a first electrode 20 and a second electrode 30 set on the insulating substrate, an inter-electrode clearance 40 formed between the first electrode and second electrode and having a nanometer order clearance making a switching phenomenon of resistance occur by applying a predetermined voltage between the first electrode and the second electrode, and a sealing member 50 sealing at least the inter-electrode clearance with gaseous oxygen filled in the inter-electrode clearance. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种由更简单的结构构成并能够稳定地执行开关操作的三端开关元件。解决方案：开关元件100包括绝缘基板10，设置在绝缘基板上的第一电极20和第二电极30，形成在第一电极和第二电极之间并具有纳米级间隙的电极间隙40 通过在第一电极和第二电极之间施加预定的电压而产生电阻的切换现象，以及密封构件50，至少用填充在电极间隙中的气态氧密封电极间间隙。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2009152351A Driving method of nano gap switching device, and storage device equipped with nano gap switching device 有权
标题翻译：纳米GAP切换装置的驱动方法以及配备NANO GAP切换装置的存储装置
公开(公告)号：JP2009152351A
公开(公告)日：2009-07-09
申请号：JP2007328393
申请日：2007-12-20
申请人： Funai Electric Advanced Applied Technology Research Institute Inc , Funai Electric Co Ltd , National Institute Of Advanced Industrial & Technology , 株式会社船井電機新応用技術研究所 , 独立行政法人産業技術総合研究所 , 船井電機株式会社
发明人： MASUDA YUICHIRO , FURUTA SHIGEO , TAKAHASHI TAKESHI , SHIMIZU TETSUO , NAITO YASUHISA , HORIKAWA MASAYO
IPC分类号： H01L49/00 , H01L45/00
CPC分类号： G11C13/00 , G11C13/0069 , G11C13/02 , G11C2013/009 , Y10S977/708 , Y10S977/723 , Y10S977/94 , Y10S977/943
摘要： PROBLEM TO BE SOLVED: To provide a driving method for a nano gap switching device that shifts from a high resistive state to a low resistive state at high probability and a storage device that shifts the nano gap switching device from a high resistive state to a low resistive state by the driving method. SOLUTION: The nano gap switching device includes an inter-electrode gap portion with a gap in the order of nanometer where a switching phenomenon occurs by impressing a predetermined voltage between a first electrode and a second electrode, impresses a voltage pulse of a first voltage value to shift from a predetermined low resistance state to a predetermined high resistance state, and impresses a voltage pulse of a second voltage value lower than the first voltage value to shift from a high resistance state to a low resistance state, wherein when shifting from the high resistance state to the low resistance state, the switching device is structured such that it impresses a voltage pulse of an intermediate voltage value between the first voltage value and the second voltage value prior to impressing the voltage value of the second voltage value. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种纳米间隙切换装置的驱动方法，其以高概率从高电阻状态转变为低电阻状态;以及存储装置，其将纳米间隙切换装置从高电阻状态通过驱动方法成为低电阻状态。解决方案：纳米间隙切换装置包括具有大约数量级的间隙的电极间隙部分，其中通过在第一电极和第二电极之间施加预定电压而发生切换现象，施加电压脉冲第一电压值从预定的低电阻状态转换到预定的高电阻状态，并且施加低于第一电压值的第二电压值的电压脉冲，以从高电阻状态转变为低电阻状态，其中当转换从高电阻状态到低电阻状态，开关器件被构造成使得在施加第二电压值的电压值之前，其施加第一电压值和第二电压值之间的中间电压值的电压脉冲。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2012190840A Nanostructure device and manufacturing method therefor 有权
标题翻译：纳米结构器件及其制造方法
公开(公告)号：JP2012190840A
公开(公告)日：2012-10-04
申请号：JP2011050552
申请日：2011-03-08
申请人： National Institute Of Advanced Industrial & Technology , Funai Electric Advanced Applied Technology Research Institute Inc , Funai Electric Co Ltd , 株式会社船井電機新応用技術研究所 , 独立行政法人産業技術総合研究所 , 船井電機株式会社
发明人： SUGA HIROSHI , NAITO YASUHISA , HORIKAWA MASAYO , SHIMIZU TETSUO , FURUTA SHIGEO , SUMIYA TORU , MASUDA YUICHIRO , TAKAHASHI TAKESHI , ONO MASATOSHI
IPC分类号： H01L29/06 , B82B1/00 , B82B3/00
摘要： PROBLEM TO BE SOLVED: To provide an electrode having a nano gap structure where the single crystal planes face each other and the shape is arranged at the atomic level, and to provide a nanostructure device having this electrode and a manufacturing method therefor.SOLUTION: A nano gap is formed while growing a crystal of a thin metallic wire by applying a predetermined voltage and feeding a predetermined current thereto in an atmosphere gas accelerating crystal growth. The thin metallic wire is locally provided with a region having high crystallinity by crystal growth, and a nano gap is formed in the region.
摘要翻译：要解决的问题：为了提供具有纳米间隙结构的电极，其中单晶面彼此面对并且形状被布置在原子水平，并且提供具有该电极的纳米结构器件及其制造方法。解决方案：通过施加预定电压并在气氛气体促进晶体生长中向其中供给预定电流，在生长金属细线的晶体的同时形成纳米间隙。薄金属线通过晶体生长在局部设置有具有高结晶度的区域，并且在该区域中形成纳米间隙。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2010245471A Method of manufacturing element with nano gap electrode 有权
标题翻译：用NANO GAP电极制造元件的方法
公开(公告)号：JP2010245471A
公开(公告)日：2010-10-28
申请号：JP2009095575
申请日：2009-04-10
申请人： Funai Electric Advanced Applied Technology Research Institute Inc , Funai Electric Co Ltd , 株式会社船井電機新応用技術研究所 , 船井電機株式会社
发明人： FURUTA SHIGEO , SUMIYA TORU , MASUDA YUICHIRO , TAKAHASHI TAKESHI , HAYASHI YUTAKA , ONO MASATOSHI
IPC分类号： H01L49/02 , B82B3/00
CPC分类号： H01L45/1233 , H01L45/04 , H01L45/16 , Y10T29/49082 , Y10T29/49105
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing an element with nano gap electrodes, readily achieving mass production of elements constant in distance between the nano gap electrodes. SOLUTION: The method of manufacturing the element 1 with the nano gap electrodes includes: a first electrode-forming step of forming a first electrode 20; a spacer-forming step of forming a spacer 30 on an upper surface of the first electrode 20; a second electrode-forming step of forming a second electrode 60 in contact with an upper surface of the spacer 30; and a spacer removing step of removing the spacer 30 to form a gap 70. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种制造具有纳米间隙电极的元件的方法，可以容易地实现大量生产纳米间隙电极之间的距离恒定的元件。解决方案：用纳米间隙电极制造元件1的方法包括：形成第一电极20的第一电极形成步骤; 间隔物形成步骤，在第一电极20的上表面上形成间隔物30; 第二电极形成步骤，形成与间隔件30的上表面接触的第二电极60; 以及去除间隔件30以形成间隙70的间隔物去除步骤。版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2010157569A Memory cell array 审中-公开
标题翻译：存储单元阵列
公开(公告)号：JP2010157569A
公开(公告)日：2010-07-15
申请号：JP2008334144
申请日：2008-12-26
申请人： Funai Electric Advanced Applied Technology Research Institute Inc , Funai Electric Co Ltd , 株式会社船井電機新応用技術研究所 , 船井電機株式会社
发明人： TAKAHASHI TAKESHI , HAYASHI YUTAKA , MASUDA YUICHIRO , FURUTA SHIGEO , ONO MASATOSHI
IPC分类号： H01L27/10 , G11C13/00 , H01L21/8242 , H01L27/108
CPC分类号： H01L27/24 , G11C13/00 , G11C13/0069 , G11C13/02 , G11C2013/0071 , G11C2013/009 , G11C2213/79
摘要： PROBLEM TO BE SOLVED: To provide a memory cell array which is advantageous to miniturization and is easy to design and manufacture. SOLUTION: A first bit line BL1 connected to a selected memory cell 100 is connected to a ground G, a word line WL connected to the memory cell 100 is specified, a writing voltage is supplied to a second bit line BL2, and data is written in the memory cell 100. The first bit line BL1 connected to the selected memory cell 100 is connected to a sense amplifier, the word line WL connected to the memory cell 100 is specified, a reading voltage is supplied to the second bit line BL2, and data is read out from the memory cell 100. In writing and reading, a voltage of the word line WL is set to a gate threshold voltage of the MOS transistor 110 or higher and a sum of a drive voltage of a circuit for specifying the first bit line BL1 and a gate threshold voltage or lower to specify the word line WL. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供有利于小型化并易于设计和制造的存储单元阵列。＆lt;解决方案＆gt;连接到所选存储单元100的第一位线BL1连接到地G，指定连接到存储单元100的字线WL，写入电压被提供给第二位线BL2，并且将数据写入存储单元100.连接到所选存储单元100的第一位线BL1连接到读出放大器，指定连接到存储单元100的字线WL，向第二位提供读取电压线BL2，并且从存储单元100读出数据。在写入和读取中，字线WL的电压被设置为MOS晶体管110的栅极阈值电压或更高，并且电路的驱动电压之和用于指定第一位线BL1和栅极阈值电压或更低电平以指定字线WL。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2010080735A Memory element, method of manufacturing the same, element having memory array structure, and memory array 有权
标题翻译：记忆元素，制造它们的方法，具有存储器阵列结构的元件和存储器阵列
公开(公告)号：JP2010080735A
公开(公告)日：2010-04-08
申请号：JP2008248440
申请日：2008-09-26
申请人： Funai Electric Advanced Applied Technology Research Institute Inc , Funai Electric Co Ltd , 株式会社船井電機新応用技術研究所 , 船井電機株式会社
发明人： HAYASHI YUTAKA , ONO MASATOSHI , TAKAHASHI TAKESHI , MASUDA YUICHIRO , FURUTA SHIGEO
IPC分类号： H01L27/10
摘要： PROBLEM TO BE SOLVED: To solve a problem in an inclined evaporation type nano gap switch element in the prior art: the switching electric characteristics change in an ambient and finally the switching characteristics are not exhibited in the element having this structure because variations are caused in electric characteristics of a large number of two electrodes due to site dependency on a wafer and dependency per wafer which appear on a distance between the two electrodes.
SOLUTION: In the memory element having a laminate structure configured by at least a first conductive film 130, a first insulating film 110 and a second conductive film 230, an opposite portion between the first conductive film 130 and the second conductive film 230 is provided via a first hole 180 provided in the first insulating film 110 and the memory element is configured by the first conductive film 130, the second conductive film 230 and a gap g between and the first conductive film 130 and the second conductive film 230 in the first hole 180. The first hole 180 and the gap g may be interrupted from an ambient air.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题为了解决现有技术中的倾斜蒸发型纳米间隙开关元件的问题：环境中的开关电特性变化以及最终的开关特性在具有这种结构的元件中不显示出来，因为变化由于对晶片的位置依赖性而导致大量的两个电极的电特性以及出现在两个电极之间的距离上的每个晶片的依赖性。解决方案：在具有由至少第一导电膜130，第一绝缘膜110和第二导电膜230构成的层压结构的存储元件中，在第一导电膜130和第二导电膜230之间的相对部分通过设置在第一绝缘膜110中的第一孔180提供，并且存储元件由第一导电膜130，第二导电膜230和第一导电膜130与第二导电膜230之间的间隙g构成第一孔180.第一孔180和间隙g可以从环境空气中断。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2009014485A Enzyme electrode and enzyme sensor 有权
标题翻译： ENZYME电极和ENZYME传感器
公开(公告)号：JP2009014485A
公开(公告)日：2009-01-22
申请号：JP2007176200
申请日：2007-07-04
申请人： Funai Electric Advanced Applied Technology Research Institute Inc , Funai Electric Co Ltd , 株式会社船井電機新応用技術研究所 , 船井電機株式会社
发明人： SHIMOMURA TAKESHI , SUMIYA TORU , MASUDA YUICHIRO , ONO MASATOSHI
IPC分类号： G01N27/327 , B82B1/00 , G01N27/416
CPC分类号： C12Q1/001 , B82Y5/00 , G01N27/3272
摘要： PROBLEM TO BE SOLVED: To provide an enzyme electrode which detects a target substance with high sensitivity at a high speed and has an excellent stability and a long life, and to provide an enzyme sensor using it. SOLUTION: The enzyme electrode 1 is equipped with an electrode 2, a carbon nanotube layer L having a plurality of the carbon nanotubes 3 directly extended from the electrode 2 and/or the metal catalyst fixed on the electrode 2 and the enzyme 4 held between the carbon nanotubes 3 to be fixed to the carbon nanotube layer L. COPYRIGHT: (C)2009,JPO&INPIT

10. 发明专利

JP2012048779A Driving method of memory element, and storage device having memory element 有权
标题翻译：存储器元件的驱动方法和具有存储器元件的存储器件
公开(公告)号：JP2012048779A
公开(公告)日：2012-03-08
申请号：JP2010189132
申请日：2010-08-26
申请人： Funai Electric Advanced Applied Technology Research Institute Inc , Funai Electric Co Ltd , National Institute Of Advanced Industrial & Technology , 株式会社船井電機新応用技術研究所 , 独立行政法人産業技術総合研究所 , 船井電機株式会社
发明人： TAKAHASHI TAKESHI , MASUDA YUICHIRO , FURUTA SHIGEO , SUMIYA TORU , ONO MASATOSHI , HAYASHI YUTAKA , FUKUOKA TOSHIMI , SHIMIZU TETSUO , SOMU KUMARAGURUBARAN , SUGA HIROSHI , NAITO YASUHISA
IPC分类号： G11C13/00 , H01L27/105 , H01L45/00 , H01L49/02
CPC分类号： G11C13/0002 , G11C13/003 , G11C13/0069 , G11C17/16 , G11C2013/009 , G11C2213/33 , G11C2213/52 , G11C2213/74 , G11C2213/79
摘要： PROBLEM TO BE SOLVED: To provide a driving method of a memory element, enabling more stable switching operations.SOLUTION: A memory element 10 comprises: an insulating substrate 1; a first electrode 2 and a second electrode 3 arranged on the insulating substrate; and an electrode gap portion 4 to cause a change in resistance value between the first electrode and the second electrode. A first voltage pulse is applied to the memory element 10 for shifting from a predetermined low resistance state to a predetermined high resistance state from a pulse generation source, and a second voltage pulse is applied for shifting from the high resistance state to the lower resistance state through a series connected resistor, resulting in a reduced current value flowing to the memory element after a change to a low resistance value.
摘要翻译：要解决的问题：提供一种存储元件的驱动方法，能够实现更稳定的开关操作。存储元件10包括：绝缘基板1; 布置在所述绝缘基板上的第一电极2和第二电极3; 以及电极间隙部分4，以引起第一电极和第二电极之间的电阻值的变化。第一电压脉冲被施加到存储元件10，用于从脉冲发生源从预定的低电阻状态转换到预定的高电阻状态，并且施加第二电压脉冲以从高电阻状态转换到较低电阻状态通过串联连接的电阻器，导致在改变为低电阻值之后流向存储元件的电流值减小。版权所有（C）2012，JPO＆INPIT

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