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1. 发明专利

JP2004349592A Wavelength variable laser diode 审中-公开
公开(公告)号：JP2004349592A
公开(公告)日：2004-12-09
申请号：JP2003147126
申请日：2003-05-26
申请人： Fujitsu Ltd , 富士通株式会社
发明人： SATOU YOSHIHIRO
IPC分类号： H01S5/12
摘要： PROBLEM TO BE SOLVED: To increase an efficiency by reducing leakage in a control current or a drive current in a wavelength variable laser diode of a TTG (tunable twin-guide)-DFB (distributed feedback) structure.
SOLUTION: In the wavelength variable laser diode of a TTG-DFB structure, a semiconductor barrier layer (27) is formed around a current path of a drive current or a control current to an active layer (22E) or a tuning layer (22C) to suppress carrier leakage.
COPYRIGHT: (C)2005,JPO&NCIPI

2. 发明专利

JP2008198941A Semiconductor device and manufacturing method for semiconductor device 审中-公开
标题翻译：半导体器件的半导体器件及其制造方法
公开(公告)号：JP2008198941A
公开(公告)日：2008-08-28
申请号：JP2007035281
申请日：2007-02-15
申请人： Fujitsu Ltd , 富士通株式会社
发明人： MIYAGAKI SHINJI , SATOU YOSHIHIRO
IPC分类号： H01L27/10 , H01L21/768 , H01L45/00 , H01L49/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having a resistance change memory element with stable operation and good reliability.
SOLUTION: The semiconductor device has a resistance change memory element 40 structured such that a resistance change layer 41, in which a resistance value changes by applying a voltage, is sandwiched by a lower electrode 42 and an upper electrode 43, wherein a convex portion 43A is formed at the side facing the resistance change layer of at least either one of the two electrodes, a concave portion 41A is formed in the resistance change layer 41 that corresponds to the convex portion 43A, the thickness of the resistance change layer 41 (a transition metal oxide, e.g., a nickel oxide film) becomes thin in a part corresponding to the concave portion 41A, and a resistance value becomes substantially small to surroundings of the concave portion 41A, and thus, an area practically contributing to the operation of the memory is an area corresponding to the convex portion 43A.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有稳定运行和良好可靠性的电阻变化存储元件的半导体器件。解决方案：半导体器件具有电阻变化存储元件40，其被构造为使得电阻值通过施加电压而改变的电阻变化层41被下电极42和上电极43夹持，其中，在与两个电极中的至少一个电阻的电阻变化层相对的一侧形成有凸部43A，在电阻变化层41中形成有与凸部43A对应的凹部41A，电阻变化层 41（过渡金属氧化物，例如氧化镍膜）在对应于凹部41A的部分变薄，并且电阻值对于凹部41A的周围变得基本小，因此实际上有助于存储器的操作是与凸部43A对应的区域。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2006210396A Magnetic memory device and reading method thereof 审中-公开
标题翻译：磁记忆装置及其读取方法
公开(公告)号：JP2006210396A
公开(公告)日：2006-08-10
申请号：JP2005016635
申请日：2005-01-25
申请人： Fujitsu Ltd , 富士通株式会社
发明人： SATOU YOSHIHIRO
IPC分类号： H01L27/105 , G11C11/15 , H01L21/8246 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetic memory device utilizing resistance change based on the magnetization direction of a magnetic layer which can reduce an area proportion of a reference cell. SOLUTION: The magnetic memory device has a memory cell MC having a first magnetoresistance effect element 62 having first and second magnetic layers, and becoming a high resistant state or a low resistant state depending on the magnetization direction of the second magnetic layer corresponding to the magnetization direction of the first magnetic layer; and a reference cell RC having a second magnetoresistance effect element 62 R consisting of the same laminate structure as that of the element 62, having an element area different from that of the element 62 and having a resistance value between the resistance value of the element 62 in a high resistance state and the resistance value of the element 62 in a low resistance state. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种利用可以减小参考单元的面积比例的基于磁性层的磁化方向的电阻变化的磁存储器件。解决方案：磁存储器件具有具有第一磁阻效应元件62的存储单元MC，该第一磁阻效应元件62具有第一和第二磁性层，并且根据第二磁性层对应的磁化方向成为高电阻状态或低电阻状态到第一磁性层的磁化方向; 以及具有与元件62相同的层叠结构的第二磁阻效应元件62S 的参考元件RC，其元件区域与元件62的元件区域不同，并具有与元件62的电阻值之间的电阻值高电阻状态下的元件62的电阻值和低电阻状态下元件62的电阻值。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2003078209A Optical semiconductor device 审中-公开
标题翻译：光学半导体器件
公开(公告)号：JP2003078209A
公开(公告)日：2003-03-14
申请号：JP2001268331
申请日：2001-09-05
申请人： Fujitsu Ltd , 富士通株式会社
发明人： SATOU YOSHIHIRO
IPC分类号： H01S5/22 , H01S5/026 , H01S5/12
摘要： PROBLEM TO BE SOLVED: To provide a wavelength variable optical semiconductor device where a laser array, an optical confluence unit, and SOA are integrated, where turbulences generated in the output field pattern of SOA are eliminated, and an optical output coupled to an optical fiber is made uniform independently of a laser channel position.
SOLUTION: A DFB laser array 51, an optical confluence unit 53 confluencing the waveguide of the DFB laser array 51, and a semiconductor optical amplifier 54 optically coupled to the optical confluence unit 53, are integrated on the same substrate 41 for the formation of an optical semiconductor device. The semiconductor optical amplifier 54 is provided in parallel with the substrate 41 and at an angle with the end face of the substrate, and a light absorber 46 is provided near the semiconductor optical amplifier 54 at a position where scattered light is liable to appear.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种波长可变的光学半导体器件，其中集成了激光阵列，光汇合单元和SOA，其中消除了在SOA的输出场模式中产生的湍流，并且耦合到光纤的光输出独立于激光通道位置而制成均匀的。解决方案：DFB激光器阵列51，融合DFB激光器阵列51的波导的光汇合单元53和光学耦合到光汇合单元53的半导体光放大器54集成在同一基板41上，用于形成光半导体器件。半导体光放大器54与基板41平行设置并与基板的端面成角度，并且在散射光易于出现的位置处，在半导体光放大器54附近设置有光吸收体46。

5. 发明专利

JP2004247502A Semiconductor light device and method for manufacturing it 有权
公开(公告)号：JP2004247502A
公开(公告)日：2004-09-02
申请号：JP2003035519
申请日：2003-02-13
申请人： Fujitsu Ltd , 富士通株式会社
发明人： SATOU YOSHIHIRO
IPC分类号： H01S5/12 , H01S5/026 , H01S5/22 , H01S5/227
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light device having a wide variable wavelength range and outputs a high optical power in varied wavelength.
SOLUTION: A TTG-DFB laser oscillator is arranged on the first region of a first conductive type semiconductor substrate. An optical amplifier for receiving and amplifying a laser beam emitted from the laser oscillator is arranged on the second region of the semiconductor substrate. A buried layer is buried in both the sides of the mesa structure of the laser oscillator and the optical amplifier. The optical amplifier includes a second conductive type first clad layer, a second active layer, and a first conductive type second clad layer. The optical amplifier includes a second conductive type lower buried layer and a first conductive type or semi-insulative upper buried layer. The lower buried layer contacts the end of an intermediate layer at the both sides of the mesa structure of the laser oscillator. A thickness of the lower buried layer is determined so that the lower buried layer contacts the end of the first clad layer but does not contact the end of the second active layer at both the sides of the mesa structure of the optical amplifier.
COPYRIGHT: (C)2004,JPO&NCIPI

6. 发明专利

JP2004235600A Optical semiconductor device, manufacturing method thereof, and driving method thereof 有权
公开(公告)号：JP2004235600A
公开(公告)日：2004-08-19
申请号：JP2003135908
申请日：2003-05-14
申请人： Fujitsu Ltd , 富士通株式会社
发明人： HAYAKAWA AKINORI , SATOU YOSHIHIRO , MORITO TAKESHI , SEKINE NORIHIKO
IPC分类号： H01S5/026 , H01L27/15 , H01S5/028 , H01S5/042 , H01S5/06 , H01S5/062 , H01S5/0625 , H01S5/12 , H01S5/22 , H01S5/227 , H01S5/323 , H01S5/40
CPC分类号： H01S5/0607 , H01S5/026 , H01S5/0265 , H01S5/028 , H01S5/042 , H01S5/0425 , H01S5/06206 , H01S5/06258 , H01S5/1014 , H01S5/2206 , H01S5/227 , H01S5/32333 , H01S5/4012 , H01S5/4087 , H01S2301/173
摘要： PROBLEM TO BE SOLVED: To provide an optical semiconductor device of wide variable wavelength range which provides a high optical output. SOLUTION: An optical oscillation part is formed on a semiconductor substrate 10, which comprises an active layer 20 that generates light by current injection, a tuning layer 24 which is formed to the active layer 20 with an intermediate layer 22 in between, and a diffraction lattice 28 formed near the active layer 20 and the tuning layer 24. An optical amplification part is also formed on the semiconductor substrate 10, which comprises the active layer 20 that amplifies the light by current injection and amplifies the light generated at the optical oscillation part. Since the optical amplifier and the optical oscillation element of wide variable wavelength range are integrated on the semiconductor substrate, the wide variable range is obtained and the optical output is significantly raised. COPYRIGHT: (C)2004,JPO&NCIPI

7. 发明专利

JP2004146463A Semiconductor device 有权
公开(公告)号：JP2004146463A
公开(公告)日：2004-05-20
申请号：JP2002307517
申请日：2002-10-22
申请人： Fujitsu Ltd , 富士通株式会社
发明人： HAYAKAWA AKINORI , SEKINE NORIHIKO , SATOU YOSHIHIRO , YAMAMOTO TAKAYUKI
IPC分类号： H01S5/062 , H01S5/042
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which is capable of using a substrate as a ground potential point without affecting the device characteristics, such as laser characteristics, and coping with the fact that it is integrated with other elements on the same substrate. SOLUTION: The semiconductor device is equipped with an n-type InP substrate 10, a laminated film which is formed on the substrate 10 and composed of an n-type InGaAsP wavelength control layer 24, an n-type InP intermediate layer 26 formed on the n-type InGaAsP wavelength control layr 24, and an active layer 28 formed on the n-type InP intermediate layer 26; an intermediate electrode 50 for electrically connecting the n-type InP intermediate layer 26, and the n-type InP substrate 10 together; a wavelength control electrode 40 for injecting a current into the n-type InGaAsP wavelength control layer 24; a laser oscillation electrode 56 for injecting a current into the active layer 28; and a substrate electrode 18 which is electrically connected to the n-type InP substrate 10 to extract a current from the n-type InGaAsP wavelength control layer 24 and the active layer 28. COPYRIGHT: (C)2004,JPO

8. 发明专利

JP2003344221A Evaluation method, manufacturing method and evaluation device for semiconductor laser system 审中-公开
标题翻译：用于半导体激光系统的评估方法，制造方法和评估装置
公开(公告)号：JP2003344221A
公开(公告)日：2003-12-03
申请号：JP2002152194
申请日：2002-05-27
申请人： Fujitsu Ltd , 富士通株式会社
发明人： SATOU YOSHIHIRO
IPC分类号： G01M11/00 , H01S5/00
摘要： PROBLEM TO BE SOLVED: To provide an evaluation method for a semi-conductor laser system capable of measuring a micro change with the lapse of time in an oscillation wavelength of the semi-conductor laser system.
SOLUTION: (a) An evaluation sample combined thermally with the tested semiconductor laser system and a semiconductor laser system for wavelength monitoring is prepared. (b) A driving current is made to flow in the tested semiconductor laser system to measure the oscillation wavelength. (c) A driving current is made to flow to the semiconductor laser system for the wavelength monitoring to measure the oscillation wavelength. (d) A difference between the oscillation wavelength of the tested semiconductor laser system measured in the process (b) and the oscillation wavelength of the semiconductor laser system for the wavelength monitoring measured in the process (c) is calculated. (e) A condition where the driving current flows in the tested semiconductor laser system and where no driving current flows in the semiconductor laser system for the wavelength monitoring is brought to maintain the condition for a period. (f) The processes from the process (b) up to the process (e) are repeatedly executed after the process (e).
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种能够在半导体激光系统的振荡波长中随时间测量微变化的半导体激光系统的评估方法。解决方案：（a）准备与测试的半导体激光系统和用于波长监测的半导体激光系统热合并的评估样本。（b）在测试的半导体激光系统中使驱动电流流动以测量振荡波长。（c）使驱动电流流到半导体激光系统进行波长监测，以测量振荡波长。（d）计算（b）中测定的被测半导体激光器系统的振荡波长与在（c）中测定的波长监视用半导体激光器系统的振荡波长的差。（e）使驱动电流在被测半导体激光器系统中流动并且在用于波长监视的半导体激光系统中没有驱动电流流动的条件被维持一段时间的状态。（f）在过程（e）之后，重复执行从过程（b）到过程（e）的过程。版权所有（C）2004，JPO

9. 发明专利

JP2002164615A OPTICAL SEMICONDUCTOR DEVICE AND OPTICAL SEMICONDUCTOR MODULE 失效
公开(公告)号：JP2002164615A
公开(公告)日：2002-06-07
申请号：JP2000356999
申请日：2000-11-24
申请人： FUJITSU LTD
发明人： SATOU YOSHIHIRO
IPC分类号： G02B6/122 , H01S5/026 , H01S5/0683 , H01S5/22
摘要： PROBLEM TO BE SOLVED: To restrain the decrease of optical output which is caused by temperature change during variable wavelength control, regarding an optical semiconductor device and an optical semiconductor module. SOLUTION: A temperature changeable control means 5 is installed only in a semiconductor laser part 2 of the optical semiconductor device in which the semiconductor laser part 2 oscillating at a single wavelength and a semiconductor optical amplifier part 4 are coupled through an optical waveguide part 3 and integrated on an identical substrate 1.

10. 发明专利

JPS59140302A Manufacture of permanent magnet 失效
标题翻译：永磁体的制造
公开(公告)号：JPS59140302A
公开(公告)日：1984-08-11
申请号：JP1139183
申请日：1983-01-28
申请人： Fujitsu Ltd
发明人： YAMAGISHI WATARU , SATOU YOSHIHIRO
IPC分类号： B22F3/00 , B08B5/02 , B08B7/00 , C22C1/04 , H01F1/08
CPC分类号： B08B5/02 , B08B7/00
摘要： PURPOSE: To prevent an unfavorable effect of magnetic powder by oxidizing the magnetic powder adhering to the surface of a permanent magnet manufactured by powder metallurgy, and removing the oxidized powder by blowing compressd gas thereon.
CONSTITUTION: In reference to a sintered permanent magnet manufactured by powder metallurgy, only the magnetic powder adhering to the surface of the magnet is oxidized, for example, by allowing the magnet to stand in a dessicator, wherein gaseous O
2 is introduced to decrease the residual magnetic flux density thereof. Then the magnetic powder, having decreased magnetic attractive force due to the oxidation, is removed by blowing compressed air at 2W5kg/cm
2 thereon by means of an air gun or the like.
COPYRIGHT: (C)1984,JPO&Japio
摘要翻译：目的：通过氧化附着在由粉末冶金制造的永久磁铁的表面的磁性粉末来防止磁粉的不利影响，并且通过在其上吹送压缩气体来除去氧化的粉末。构成：关于通过粉末冶金制造的烧结永久磁铁，只有附着在磁体表面的磁粉被氧化，例如通过使磁铁放置在干燥器中，其中引入气态O 2以减少残余磁通密度。然后，通过用气枪等吹入压力为2-5kg / cm 2的压缩空气除去由于氧化而导致的磁吸引力降低的磁性粉末。

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