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1. 发明专利

JP2014029941A Optical semiconductor device and optical semiconductor device manufacturing method 有权
标题翻译：光学半导体器件和光学半导体器件制造方法
公开(公告)号：JP2014029941A
公开(公告)日：2014-02-13
申请号：JP2012170114
申请日：2012-07-31
申请人： Fujitsu Ltd , 富士通株式会社
发明人： HAYAKAWA AKINORI , MATSUMOTO TAKESHI
IPC分类号： H01S5/16
CPC分类号： H01S5/343 , H01S5/0287 , H01S5/06258 , H01S5/12 , H01S5/1203 , H01S5/1218 , H01S5/164 , H01S5/2231 , H01S2301/163
摘要： PROBLEM TO BE SOLVED: To provide an optical semiconductor device in which band gap in a quantum well active layer at an output end face is wider than band gap inside the output end face and which includes single longitudinal mode laser having diffraction grating which generates band gap of the quantum well active layer inside the output end face between lots, between wafers and so on uniformly and with high yield.SOLUTION: An optical semiconductor device comprises: a semiconductor substrate 110; a lower clad layer 112 on the semiconductor substrate; a quantum well active layer 113 formed from a semiconductor material on the lower clad layer; and a diffraction grating layer 117 having diffraction grating on a surface formed from a semiconductor material on the quantum well active layer. In the quantum well active layer, band gap in a region near an end face is wider than band gap in an inner region inside near the end face. Between the semiconductor substrate and the quantum well active layer, a film thickness of a layer which includes the lower clad layer and is formed from a semiconductor material is 2.3 μm and over.
摘要翻译：要解决的问题：提供一种光学半导体器件，其中在输出端面处的量子阱有源层中的带隙比输出端面内的带隙宽，并且包括具有产生带隙的衍射光栅的单纵模式激光器的量子阱有源层之间的输出端面内部，晶片等之间的均匀和高产率。解决方案：一种光学半导体器件包括：半导体衬底110; 半导体衬底上的下包层112; 由下包层上的半导体材料形成的量子阱有源层113; 以及在由量子阱活性层上的半导体材料形成的表面上具有衍射光栅的衍射光栅层117。在量子阱活性层中，靠近端面的区域中的带隙比靠近端面的内部区域内的带隙宽。在半导体衬底和量子阱有源层之间，包括下覆盖层并由半导体材料形成的层的膜厚度为2.3μm及以上。

2. 发明专利

JP2010230978A Optical semiconductor device and method of manufacturing the same 审中-公开
标题翻译：光学半导体器件及其制造方法
公开(公告)号：JP2010230978A
公开(公告)日：2010-10-14
申请号：JP2009078466
申请日：2009-03-27
申请人： Fujitsu Ltd , 富士通株式会社
发明人： HAYAKAWA AKINORI
IPC分类号： G02F1/017
摘要： PROBLEM TO BE SOLVED: To improve a yield of an optical semiconductor device wherein a belt-shaped semiconductor laminate structure having an electrode formed at the top is embedded with an organic insulator.
SOLUTION: The optical semiconductor device includes; an optical waveguide structure consisting of a projection-shaped semiconductor laminate structure; the organic insulator embedding the optical waveguide structure and having a plurality of opening parts reaching the top of the optical waveguide structure; and an electrode formed in a plurality of opening parts.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提高其中在顶部形成有电极的带状半导体层叠结构嵌入有机绝缘体的光半导体器件的产率。解决方案：光学半导体器件包括：由突起状半导体层叠体构成的光波导结构; 所述有机绝缘体嵌入所述光波导结构，并且具有到达所述光波导结构的顶部的多个开口部; 以及形成在多个开口部中的电极。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2013211381A Optical semiconductor device and method of manufacturing the same 有权
标题翻译：光学半导体器件及其制造方法
公开(公告)号：JP2013211381A
公开(公告)日：2013-10-10
申请号：JP2012079972
申请日：2012-03-30
申请人： Fujitsu Ltd , 富士通株式会社
发明人： HAYAKAWA AKINORI
IPC分类号： H01S5/12 , H01S5/0687
摘要： PROBLEM TO BE SOLVED: To efficiently heat a waveguide with a simple configuration, related to an optical semiconductor device and a method of manufacturing the same.SOLUTION: At a portion away from a core layer of a second clad layer formed on the core layer, a stripe-like ridge structure in which a cross section vertical to an optical axis is to be an optical waveguide of vertical mesa shape or inverted mesa shape. On an insulating film formed on at least a side surface of the ridge structure, a heater element made from metal film is provided.
摘要翻译：要解决的问题：为了有效地加热与光半导体器件相关的简单结构的波导及其制造方法。解决方案：在远离形成在芯层上的第二覆层的芯层的部分，其中垂直于光轴的横截面为垂直台面形状或倒置台面形状的光波导的条纹状脊结构。在形成在脊结构的至少侧面上的绝缘膜上，设置有由金属膜制成的加热元件。

4. 发明专利

JP2013207023A Optical semiconductor device 有权
标题翻译：光学半导体器件
公开(公告)号：JP2013207023A
公开(公告)日：2013-10-07
申请号：JP2012073155
申请日：2012-03-28
申请人： Fujitsu Ltd , 富士通株式会社
发明人： HAYAKAWA AKINORI
IPC分类号： H01S5/026
摘要： PROBLEM TO BE SOLVED: To provide an optical semiconductor device in which reduction of single longitudinal mode yield due to the end face phase during production, and deterioration of single longitudinal mode due to the end face phase change during element drive are suppressed.SOLUTION: The optical semiconductor device includes a first clad layer 3 formed on a semiconductor substrate 1, an active layer 4 formed on the first clad layer 3, a second clad layer 5 formed on the active layer 4, a first end face formed in the first clad layer 3, the active layer 4 and the second clad layer 5, a second end face having a reflectivity lower than that of the first end face, electrodes 12, 18 for injecting a current into the active layer 4, a diffraction grating 6a formed above or below the active layer 4 and not formed on the first end face and the vicinity thereof, a first region in which the diffraction grating 6a is not formed, a second region from the inside edge of the first region to the second end face, a first heater 17 for heating the first region, and a second heater 16 for heating the second region.
摘要翻译：要解决的问题：提供一种光学半导体器件，其中由于在制造期间由于端面相而导致的单纵模屈服的降低以及由元件驱动期间的端面相位变化引起的单纵模的劣化被抑制。解决方案：光半导体器件包括形成在半导体衬底1上的第一覆盖层3，形成在第一覆盖层3上的有源层4，形成在有源层4上的第二覆盖层5，形成在第一覆盖层如图3所示，有源层4和第二覆盖层5，具有低于第一端面的反射率的第二端面，用于向有源层4注入电流的电极12,18，在有源层4的下方并未形成在第一端面及其附近的第一区域，没有形成衍射光栅6a的第一区域，从第一区域的内边缘到第二区域的第二区域用于加热第一区域的第一加热器17和用于加热第二区域的第二加热器16。

5. 发明专利

JP2012198374A Optical semiconductor element 有权
标题翻译：光学半导体元件
公开(公告)号：JP2012198374A
公开(公告)日：2012-10-18
申请号：JP2011062290
申请日：2011-03-22
申请人： Fujitsu Ltd , 富士通株式会社
发明人： HAYAKAWA AKINORI
IPC分类号： G02F1/025
CPC分类号： G02F1/2255 , G02F1/2257
摘要： PROBLEM TO BE SOLVED: To provide an optical semiconductor element capable of performing zero chirp modulation and negative chirp modulation easily.SOLUTION: An optical branching filter includes first and second input ports and first and second output ports. When signal light is inputted into the first input port, intensity of signal light outputted from the first output port becomes equal to intensity of signal light outputted from the second output port. When signal light is inputted into the second input port, intensity of signal light outputted from the first output port becomes larger than intensity of signal light outputted from the second output port. An optical multiplexer includes third and fourth input ports and third and fourth output ports. A first optical waveguide connects the first output port and the third input port, and a second optical waveguide connects the second output port and the fourth input port. Optical lengths of the first optical waveguide and the second optical waveguide are changed by voltages to be applied to a first modulation electrode and a second modulation electrode.
摘要翻译：要解决的问题：提供能够容易地进行零线性调频和负啁啾调制的光半导体元件。解决方案：光分路滤波器包括第一和第二输入端口以及第一和第二输出端口。当信号光被输入到第一输入端口时，从第一输出端口输出的信号光的强度变得等于从第二输出端口输出的信号光的强度。当信号光被输入到第二输入端口时，从第一输出端口输出的信号光的强度变得大于从第二输出端口输出的信号光的强度。光复用器包括第三和第四输入端口以及第三和第四输出端口。第一光波导连接第一输出端口和第三输入端口，第二光波导连接第二输出端口和第四输入端口。通过施加到第一调制电极和第二调制电极的电压来改变第一光波导和第二光波导的光学长度。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2012074411A Optical semiconductor element 有权
标题翻译：光学半导体元件
公开(公告)号：JP2012074411A
公开(公告)日：2012-04-12
申请号：JP2010215872
申请日：2010-09-27
申请人： Fujitsu Ltd , 富士通株式会社
发明人： HAYAKAWA AKINORI , TOMABECHI SHUICHI
IPC分类号： H01S5/026
摘要： PROBLEM TO BE SOLVED: To provide an optical semiconductor element having a reduced size.SOLUTION: An optical semiconductor element 10 comprises: a semiconductor laser 11 formed on a substrate 30; a first phase modulator 12 that is formed on the substrate 30 and has a first optical waveguide 12a; a second phase modulator 13 that is formed on the substrate 30 and has a second optical waveguide 13a; a first optical coupler 14 that is formed on the substrate 30, splits the output light from the semiconductor laser 11 into two light beams, and then outputs the split light beams to the first optical waveguide 12a and the second optical waveguide 13a; and a second optical coupler 15 that is formed on the substrate 30, couples the output light beams from the first optical waveguide 12a and the second optical waveguide 13a, and then outputs the coupled light beams. The semiconductor laser 11, the first optical waveguide 12a, and the second optical waveguide 13a are disposed in parallel so as to overlap at least their portions.
摘要翻译：要解决的问题：提供具有减小的尺寸的光学半导体元件。解决方案：光学半导体元件10包括：形成在基板30上的半导体激光器11; 第一相位调制器12，其形成在基板30上并具有第一光波导12a; 第二相位调制器13，其形成在基板30上并具有第二光波导13a; 形成在基板30上的第一光耦合器14将来自半导体激光器11的输出光分成两束光，然后将分束光输出到第一光波导12a和第二光波导13a; 以及形成在基板30上的第二光耦合器15，耦合来自第一光波导12a和第二光波导13a的输出光束，然后输出耦合的光束。半导体激光器11，第一光波导12a和第二光波导13a平行设置成至少重叠它们的部分。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2012074409A Optical semiconductor element 有权
标题翻译：光学半导体元件
公开(公告)号：JP2012074409A
公开(公告)日：2012-04-12
申请号：JP2010215825
申请日：2010-09-27
申请人： Fujitsu Ltd , 富士通株式会社
发明人： HAYAKAWA AKINORI , YAMAMOTO TAKAYUKI
IPC分类号： H01S5/026
摘要： PROBLEM TO BE SOLVED: To provide an optical semiconductor element having a reduced size.SOLUTION: An optical semiconductor element 10 comprises: a semiconductor laser 11 that is formed on a substrate 30 and emits a light beam from each of edges facing each other; a first phase modulator 12 that is formed on the substrate 30 and has a first optical waveguide 12a into which the output light beam from one of the edges of the semiconductor laser 11 is input; a second phase modulator 13 that is formed on the substrate 30 and has a second optical waveguide 13a into which the output light beam from the other edge of the semiconductor laser 11 is input; and an optical coupler 15 that is formed on the substrate 30, couples the output light beams from the first optical waveguide 12a and the second optical waveguide 13a, and then outputs the coupled light beams.
摘要翻译：要解决的问题：提供具有减小的尺寸的光学半导体元件。解决方案：光学半导体元件10包括：半导体激光器11，其形成在基板30上并从彼此面对的每个边缘发射光束; 第一相位调制器12，其形成在基板30上，并且具有第一光波导12a，来自半导体激光器11的一个边缘的输出光束被输入到该第一光波导12a中; 第二相位调制器13，其形成在基板30上并具有从半导体激光器11的另一边缘输出输出光束的第二光波导13a; 以及形成在基板30上的光耦合器15，耦合来自第一光波导12a和第二光波导13a的输出光束，然后输出耦合的光束。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2006013191A Optical semiconductor device 审中-公开
标题翻译：光学半导体器件
公开(公告)号：JP2006013191A
公开(公告)日：2006-01-12
申请号：JP2004189406
申请日：2004-06-28
申请人： Fujitsu Ltd , 富士通株式会社
发明人： HAYAKAWA AKINORI , TANAKA SHINSUKE , MORITO TAKESHI
IPC分类号： H01S5/22 , H01S5/00 , H01S5/062 , H01S5/12 , H01S5/227 , H01S5/343
CPC分类号： H01S5/227 , B82Y20/00 , H01S5/06206 , H01S5/12 , H01S5/2214 , H01S5/2222 , H01S5/2223 , H01S5/34306 , H01S5/34373 , H01S2301/173
摘要： PROBLEM TO BE SOLVED: To provide an optical semiconductor device including a refraction factor control layer wherein basic absorption is reduced and a refraction factor change caused by a current injection becomes great.
SOLUTION: In a TTG-DFB-LD including an MQW wavelength control layer 16 wherein a refraction factor is changed by a current injection, the effective forbidden bandwidth of the MQW wavelength control layer 16 becomes greater than energy of light generated in an MQW active layer 20 just by a value of ≥40 meV and
摘要翻译：解决的问题：提供一种包括折射率控制层的光学半导体器件，其中基本吸收减小，并且由电流注入引起的折射系数变化变大。解决方案：在包括通过电流注入改变折射系数的MQW波长控制层16的TTG-DFB-LD中，MQW波长控制层16的有效禁止带宽变得大于在 MQW有源层20仅为≥40meV和<60meV的值。因此，可以减少MQW波长控制层16中的基本吸收，并且可以在由电流注入引起的MQW波长控制层16中扩大折射系数变化。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2004235600A Optical semiconductor device, manufacturing method thereof, and driving method thereof 有权
公开(公告)号：JP2004235600A
公开(公告)日：2004-08-19
申请号：JP2003135908
申请日：2003-05-14
申请人： Fujitsu Ltd , 富士通株式会社
发明人： HAYAKAWA AKINORI , SATOU YOSHIHIRO , MORITO TAKESHI , SEKINE NORIHIKO
IPC分类号： H01S5/026 , H01L27/15 , H01S5/028 , H01S5/042 , H01S5/06 , H01S5/062 , H01S5/0625 , H01S5/12 , H01S5/22 , H01S5/227 , H01S5/323 , H01S5/40
CPC分类号： H01S5/0607 , H01S5/026 , H01S5/0265 , H01S5/028 , H01S5/042 , H01S5/0425 , H01S5/06206 , H01S5/06258 , H01S5/1014 , H01S5/2206 , H01S5/227 , H01S5/32333 , H01S5/4012 , H01S5/4087 , H01S2301/173
摘要： PROBLEM TO BE SOLVED: To provide an optical semiconductor device of wide variable wavelength range which provides a high optical output. SOLUTION: An optical oscillation part is formed on a semiconductor substrate 10, which comprises an active layer 20 that generates light by current injection, a tuning layer 24 which is formed to the active layer 20 with an intermediate layer 22 in between, and a diffraction lattice 28 formed near the active layer 20 and the tuning layer 24. An optical amplification part is also formed on the semiconductor substrate 10, which comprises the active layer 20 that amplifies the light by current injection and amplifies the light generated at the optical oscillation part. Since the optical amplifier and the optical oscillation element of wide variable wavelength range are integrated on the semiconductor substrate, the wide variable range is obtained and the optical output is significantly raised. COPYRIGHT: (C)2004,JPO&NCIPI

10. 发明专利

JP2004146463A Semiconductor device 有权
公开(公告)号：JP2004146463A
公开(公告)日：2004-05-20
申请号：JP2002307517
申请日：2002-10-22
申请人： Fujitsu Ltd , 富士通株式会社
发明人： HAYAKAWA AKINORI , SEKINE NORIHIKO , SATOU YOSHIHIRO , YAMAMOTO TAKAYUKI
IPC分类号： H01S5/062 , H01S5/042
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which is capable of using a substrate as a ground potential point without affecting the device characteristics, such as laser characteristics, and coping with the fact that it is integrated with other elements on the same substrate. SOLUTION: The semiconductor device is equipped with an n-type InP substrate 10, a laminated film which is formed on the substrate 10 and composed of an n-type InGaAsP wavelength control layer 24, an n-type InP intermediate layer 26 formed on the n-type InGaAsP wavelength control layr 24, and an active layer 28 formed on the n-type InP intermediate layer 26; an intermediate electrode 50 for electrically connecting the n-type InP intermediate layer 26, and the n-type InP substrate 10 together; a wavelength control electrode 40 for injecting a current into the n-type InGaAsP wavelength control layer 24; a laser oscillation electrode 56 for injecting a current into the active layer 28; and a substrate electrode 18 which is electrically connected to the n-type InP substrate 10 to extract a current from the n-type InGaAsP wavelength control layer 24 and the active layer 28. COPYRIGHT: (C)2004,JPO

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