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1. 发明专利

JP2005109147A Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2005109147A
公开(公告)日：2005-04-21
申请号：JP2003340642
申请日：2003-09-30
申请人： Fujitsu Ltd , 富士通株式会社
发明人： KATO SADATANE , TSUJI KAZUTO , KUBOTA YOSHIHIRO , WATABE KAZUHIRO
IPC分类号： H01L23/12 , H01L23/34
CPC分类号： H01L2224/48091 , H01L2224/48465 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To surely and stably weld a heat radiating plate to the weld zone of a semiconductor device even when a small energy laser is used. SOLUTION: The semiconductor device comprises a semiconductor element 11, a circuit board 12 to which the semiconductor device is electrically connected, and a metal heat spreader 30 joined to the semiconductor element. The circuit board 12 has metal weld zones 22, and the heat spreader 30 is welded to the weld zones 22 of the circuit board 12. Recesses 30a are formed in the surface of the heat spreader 30 opposite to the surface thereof facing the weld zones 22. The heat spreader 30 is welded to the weld zones 22 within the recesses 30a by the laser. The recesses 30a are formed by etching. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：即使使用小能量激光器，也可以将热辐射板可靠且稳定地焊接到半导体器件的焊接区域。解决方案：半导体器件包括半导体元件11，与半导体器件电连接的电路板12和与半导体元件接合的金属散热器30。电路板12具有金属焊接区22，散热器30焊接到电路板12的焊接区22.凹部30a形成在散热器30的与面对焊接区22的表面相对的表面中散热器30通过激光焊接在凹部30a内的焊接区22。凹部30a通过蚀刻形成。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2007273551A Metal mold for resin sealing, resin sealing device and method of manufacturing semiconductor device 有权
标题翻译：用于树脂密封的金属模具，树脂密封装置和制造半导体器件的方法
公开(公告)号：JP2007273551A
公开(公告)日：2007-10-18
申请号：JP2006094703
申请日：2006-03-30
申请人： Fujitsu Ltd , 富士通株式会社
发明人： FUKAYA FUTOSHI , KATO SADATANE
IPC分类号： H01L21/56 , B29C45/27
CPC分类号： H01L21/565 , B29C45/02 , B29C45/14655 , B29C45/1753 , B29C45/2701 , H01L24/29 , H01L2224/29111 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/01029 , H01L2924/0133 , H01L2924/181 , H01L2924/1815 , H01L2924/00014 , H01L2924/01047 , H01L2924/0105 , H01L2924/3512 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide resin sealing technique hardly generating electric short circuit caused by metallic foreign matter mixed into sealing resin. SOLUTION: The metallic mold is provided with a pot for receiving resin, a cavity for receiving a semiconductor chip which should be sealed through resin sealing, and the way of resin or a runner for guiding the resin received in the pot to the cavity. A foreign matter pile-up unit consisting of a recess formed by digging a part of the inner surface of the runner further is formed. A magnet for the runner attracts the metallic foreign matter comprised in fluid transported through the inside of the runner to the inner surface of the foreign matter pile-up unit. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供几乎不会由混入密封树脂中的金属异物引起的电气短路的树脂密封技术。解决方案：金属模具设置有用于接收树脂的罐，用于接收应该通过树脂密封密封的半导体芯片的空腔，以及用于将接收在罐中的树脂引导到树脂或流道的方式腔。另外形成有由凹槽的内表面的一部分进一步形成的凹部构成的异物堆积单元。用于流道的磁体吸引由流体通过流道内部输送的流体的金属杂质到异物堆积单元的内表面。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2008086872A Coating machine and method of manufacturing semiconductor device 有权
标题翻译：涂料机及制造半导体器件的方法
公开(公告)号：JP2008086872A
公开(公告)日：2008-04-17
申请号：JP2006268864
申请日：2006-09-29
申请人： Fujitsu Ltd , 富士通株式会社
发明人： SAWAHATA KOJI , IGAWA OSAMU , KANWA MASARU , KATO SADATANE
IPC分类号： B05C5/00 , B05C11/10
摘要： PROBLEM TO BE SOLVED: To provide a coating machine for improving the productivity of a semiconductor device and a method of manufacturing the semiconductor device using such a coating machine.
SOLUTION: The coating machine 1 using for mounting a semiconductor element includes a container 10 for housing a liquid resin and a magnet 17a for allowing a metallic foreign matter 16 contained in the resin to be caught at a specific place within the container 10. The magnet 17a is arranged on the back surface of a plunger 11 and the metallic foreign matter 16 is stuck to the surface of the plunger 11. As the result, the metallic foreign matter 16 is caught on the surface of the plunger 11 to prevent the metallic foreign matter 16 from flowing out from the coating apparatus 1 and then, the metallic foreign matter 16 does not enter into a place between electrodes arranged in the semiconductor element and the short circuit between the electrodes arranged in the semiconductor element is prevented. As a result, the productivity of the semiconductor device is improved.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于提高半导体器件的生产率的涂布机以及使用这种涂布机制造半导体器件的方法。解决方案：用于安装半导体元件的涂布机1包括用于容纳液体树脂的容器10和用于允许容纳在树脂中的金属异物16被捕获在容器10内的特定位置的磁体17a 磁体17a设置在柱塞11的背面，金属异物16粘贴在柱塞11的表面。结果，金属异物16被卡在柱塞11的表面上以防止金属异物16从涂覆装置1流出，然后金属异物16不会进入布置在半导体元件中的电极之间的位置，并且防止布置在半导体元件中的电极之间的短路。结果，提高了半导体器件的生产率。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2008071934A Semiconductor device, and manufacturing method thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2008071934A
公开(公告)日：2008-03-27
申请号：JP2006249233
申请日：2006-09-14
申请人： Fujitsu Ltd , 富士通株式会社
发明人： KATO SADATANE , FUJISAWA TETSUYA , SATO MITSUTAKA , YOSHIDA EIJI
IPC分类号： H01L23/34 , H01L23/12
CPC分类号： H01L23/4334 , H01L21/561 , H01L23/3128 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/97 , H01L2224/05553 , H01L2224/32013 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48228 , H01L2224/48465 , H01L2224/49171 , H01L2224/73265 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01056 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/07802 , H01L2924/10162 , H01L2924/10329 , H01L2924/12041 , H01L2924/14 , H01L2924/15151 , H01L2924/15311 , H01L2924/16152 , H01L2924/181 , H01L2924/19043 , H01L2224/83 , H01L2224/85 , H01L2924/00 , H01L2924/00012 , H01L2224/92247 , H01L2224/45015 , H01L2924/207
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device structure and a manufacturing method thereof which is excellent in its heat radiating property. SOLUTION: Bonding materials 2 are so used as to dispose first heat radiating members 3 on a wiring substrate 1, and a bonding material 4 is so used as to stick a semiconductor element 5 on one of the first heat radiating members 3 and as to connect the semiconductor element 5 with the electrodes present on the wiring substrate 1 via wires 6. Further, a second heat radiating member 8 covering the semiconductor element 5 and the wires 6 is joined to the first heat radiating members 3 by using conductive bonding materials 7. Moreover, the inside portion of the second heat radiating member 8 and its outside portion from which an upper-flat-plate-form portion 8c of the member is excluded are so sealed with resins 9 as to obtain a semiconductor device 100. The heat, which is generated in the semiconductor element 5 and is conducted to the first heat radiating members 3, is so conducted to the conductive bonding materials 7 and the second heat radiating member 8 as well as edge portions 3b as to be radiated from the upper-flat-plate-form portion 8c. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种其散热性优异的半导体器件结构及其制造方法。解决方案：将接合材料2用于在布线基板1上设置第一散热构件3，并且将接合材料4用于将半导体元件5粘贴在第一散热构件3和通过导线6将半导体元件5与布线基板1上存在的电极连接。此外，覆盖半导体元件5和电线6的第二散热构件8通过使用导电接合而接合到第一散热构件3 此外，第二散热构件8的内部部分及其外部部分被排除的部件的上平板形成部分8c被树脂9密封以获得半导体器件100。在半导体元件5中产生并被传导到第一散热构件3的热量导向导电接合材料7和第二散热构件8以及边缘部分3b 从上平板形状部分8c辐射。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2000156435A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JP2000156435A
公开(公告)日：2000-06-06
申请号：JP17161299
申请日：1999-06-17
申请人： FUJITSU LTD
发明人： AIBA YOSHITAKA , KATO SADATANE , SATO MITSUTAKA , INOUE KOJI , ORIMO MASAICHI , OKADA AKIRA , KUBOTA YOSHIHIRO , ABE MITSUO , HAMANO TOSHIO , SHIBA NORIAKI , FUJISAWA TETSUYA , SEKI MASAAKI , OYAMA NOBUO
IPC分类号： H01L23/12 , H01L21/56 , H01L23/28 , H01L23/29 , H01L23/31 , H01L23/433 , H01L23/50
摘要： PROBLEM TO BE SOLVED: To reduce a reduction in the cost of a surface-mounting type semiconductor device and a decrease in the height of the device, and also perform a reliable chucking of the device. SOLUTION: A semiconductor device is provided with a semiconductor element 32, balls 34 to function as external connection terminals, a substrate 33A for electrically connecting the element 32 with the balls 34, molding resins 35A provided so as to seal one part of at least the element 32, and a connection part sealing resin 41A for sealing the connections of the substrate 33A with the element 32. The device is formed into a constitution wherein the device is mounted on a mounting substrate 46 via the balls 34. In this case, with the thermal expansion coefficient of the resins 35A made to align with the thermal expansion coefficient of the substrate 46, side surface holding parts 42 for holding the side surfaces of the element 32 are respectively formed on the resins 35A and the thermal deformation of the electrode 32 is controlled.

6. 发明专利

JP2000150730A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JP2000150730A
公开(公告)日：2000-05-30
申请号：JP32719398
申请日：1998-11-17
申请人： FUJITSU LTD
发明人： ABE MITSUO , KUBOTA YOSHIHIRO , KATO SADATANE , HAYAKAWA MICHIO , NOMOTO TAKASHI , SATO MITSUTAKA , ORIMO MASAICHI , INOUE KOJI , HAMANO TOSHIO
IPC分类号： H01L23/29 , H01L21/56 , H01L21/60 , H01L23/28 , H01L23/31 , H01L23/36
摘要： PROBLEM TO BE SOLVED: To miniaturize and thin a device and to realize high heat dissipation property while cost is reduced, the device of which is suitable for mounting a semiconductor element generating heat during operation. SOLUTION: A semiconductor device 10A is provided with a semiconductor element 1, a printed wiring board 12A, a heat spreader 13A, sealing resin 14A and solder balls 15. In the printed wiring board 12A, a wiring layer 16 where the solder balls 15 are installed at one end and a wire 18 is bonded to the other end is formed and an opening part 40 is formed in an almost center position. The heat spreader 13a is jointed in a state where the semiconductor element 11 is thermally connected to a formed stage part 24A. Sealing resin 14A is formed of a first sealing resin part 26A and a second sealing resin part 27A, which are formed by sandwiching the heat spreader 13A.

7. 发明专利

JP2003092377A SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：JP2003092377A
公开(公告)日：2003-03-28
申请号：JP2002158277
申请日：2002-05-30
申请人： FUJITSU LTD
发明人： HOSOYAMADA SUMIKAZU , KATO SADATANE , ABE MITSUO , TSUJI KAZUTO , MINAMIZAWA MASAE , HAMANO TOSHIO , YODA TOSHIYUKI , HIRAIWA KATSURO , TAKENAKA MASAJI
IPC分类号： H01L23/12 , H01L23/34
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which enables to release the heat emitted from a semiconductor element to the outside efficiently and enables to achieve high integration of terminals without increasing the package size. SOLUTION: The semiconductor element 1 is mounted on a substrate 10 in such a manner that a circuit surface 1c is opposite to the substrate 10 and an electrode terminal 1a is disposed in an opening 10a. A rear face 1b of the semiconductor element 1 opposite to the circuit surface 1a is exposed outside a resin mold 6. A heat spreader 16 which is formed of a metal plate is provided on the surface of the substrate 10 opposite to one mounted with the semiconductor element 1. The surface of the heat spreader 16 is exposed outside the resin mold 6.

8. 发明专利

JP2001168244A SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 失效
公开(公告)号：JP2001168244A
公开(公告)日：2001-06-22
申请号：JP35372799
申请日：1999-12-13
申请人： FUJITSU LTD
发明人： KATO SADATANE , ABE MITSUO , IKEMOTO YOSHIHIKO , HOSOYAMADA SUMIKAZU
IPC分类号： H01L23/12 , H01L23/31 , H01L23/34 , H01L23/433 , H01L23/495
摘要： PROBLEM TO BE SOLVED: To contrive a reduction in the cost of a semiconductor device having a heat sink to dissipate heat which is generated from a semiconductor component, and the manufacturing method of the device while the enhancement of the reliability of the device and the manufacturing method is contrived. SOLUTION: A semiconductor device is provided with a semiconductor component 11, a printed wiring board 12A having a wiring layer 16 with one end connected with solder balls 15 and with the other end connected with wires from the component 11, and a heat spreader 13A connected thermally with the element 11. Junction parts 38 are formed on the board 12A and these junction parts 38 and the heat spreader 13A are welded together by a laser welding. As a result, the spreader 13A is fixed on the board 12A.

9. 发明专利

JP2001168223A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001168223A
公开(公告)日：2001-06-22
申请号：JP34814699
申请日：1999-12-07
申请人： FUJITSU LTD
发明人： IKEMOTO YOSHIHIKO , ABE MITSUO , KATO SADATANE , HOSOYAMADA SUMIKAZU
IPC分类号： H01L23/12 , H01L21/60 , H01L23/48 , H01L23/498 , H01L23/50
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device for increasing the influence of simultaneous switching noise or the like by increasing the decoupling capacitor between ground and power supply rings. SOLUTION: A ground ring 2 and a power supply ring 3 are formed around a semiconductor component 1 on an interposer 6. A plurality of protrusions 3a protruding toward the ground ring 2 are provided at the power supply ring 3. The ground ring 2 is provided with a recess 2a for receiving the protrusions 3a at a predetermined distance.

10. 发明专利

JP2000040784A SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE UNIT AND MANUFACTURE THEREOF 失效
公开(公告)号：JP2000040784A
公开(公告)日：2000-02-08
申请号：JP20973298
申请日：1998-07-24
申请人： FUJITSU LTD
发明人： KATO SADATANE , SATO MITSUTAKA , INOUE KOJI , FUJISAWA TETSUYA
IPC分类号： B23K26/00 , B23K26/38 , H01L21/56 , H01L23/28 , H01L23/31 , H01L23/495 , H01L23/50 , H01L25/10 , H01L25/11 , H01L25/18 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide semiconductor devices which are stacked up so as to be enhanced in mounting density, a semiconductor device unit and a manufacturing method of them, where manufacturing processes and product control are simplified. SOLUTION: A semiconductor device unit 40A is formed by stacking up semiconductor devices 20A, where the semiconductor device 20A is equipped with a semiconductor chip 21, leads 24 which are each composed of an inner lead 24a and an outer lead 24b that extends outside of a resin package 27, and wires 25 that electrically connect the semiconductor chip 21 to the leads 24, and the outer leads 24b is composed of a first to a third outer leads, 24b-1 to 24b-3, which are bent along the outer sides of the resin package 27. Moreover, at least, one of leads or wires provided to the semiconductor device 20A is cut off, to be electrically disconnected from the semiconductor chip 21.

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