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1. 发明专利

JP2012176447A Electronic device, and method for manufacturing the same 有权
标题翻译：电子设备及其制造方法
公开(公告)号：JP2012176447A
公开(公告)日：2012-09-13
申请号：JP2011039349
申请日：2011-02-25
申请人： Fujitsu Ltd , 富士通株式会社
发明人： NAKATANI TADASHI , INOUE HIROAKI , UEDA TOMOSHI
IPC分类号： B81C1/00 , B81B3/00 , H01H59/00
摘要： PROBLEM TO BE SOLVED: To provide an electronic device and a method for manufacturing the same in which air tightness by sealing is improved.SOLUTION: The method includes: a step of forming a cantilever (movable part) 4x on a SOI substrate 1; a step of forming a plurality of electrode films 25A, 25B, 25C, 25G, 25 above the cantilever 4x, the electrode films separated from each other with clearance g; a step of forming a protective film 31 on the electrode films 25A, 25B, 25C, 25G, 25; and a step of forming a second protective film 32 having better step coverage than that of the first protective film 31 on the first protective film 31 so that the second protective film 32 can cover the clearance g.
摘要翻译：解决的问题：提供一种通过密封提高气密性的电子设备及其制造方法。解决方案：该方法包括：在SOI衬底1上形成悬臂（可动部）4x的步骤; 在悬臂4x上方形成多个电极膜25A，25B，25C，25G，25的步骤，电极膜以间隙g彼此分开; 在电极膜25A，25B，25C，25G，25上形成保护膜31的步骤; 以及形成具有比第一保护膜31上的第一保护膜31更好的台阶覆盖度的第二保护膜32的步骤，使得第二保护膜32可以覆盖间隙g。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2012125894A Electronic device and its manufacturing method 有权
标题翻译：电子设备及其制造方法
公开(公告)号：JP2012125894A
公开(公告)日：2012-07-05
申请号：JP2010280534
申请日：2010-12-16
申请人： Fujitsu Ltd , 富士通株式会社
发明人： INOUE HIROAKI , NAKATANI TADASHI , KATSUKI TAKASHI , UEDA TOMOSHI
IPC分类号： B81C3/00 , B81B3/00 , H01G4/33 , H01G7/00 , H01L23/02 , H01L23/10
摘要： PROBLEM TO BE SOLVED: To reduce an amount of outgassing remaining in an electronic device after sealing, in the electronic device, and to provide its manufacturing method.SOLUTION: The method for manufacturing the electronic device has the steps of: forming an underlying film 21 on a substrate 20; forming a seal 25b made by exposure and development of photosensitive resin on the underlying film 21; curing the seal 25b by heating the seal 25b; sealing a switching element 19 with the seal 25b by attaching the seal 25b to the switching element 19 formed on the substrate 1; and peeling off the substrate 1 from the seal 25b with the underlying film 21 as a border after sealing.
摘要翻译：要解决的问题：为了减少密封后的电子设备中的除气量，在电子设备中，并提供其制造方法。解决方案：用于制造电子器件的方法具有以下步骤：在衬底20上形成下面的膜21; 形成通过在下面的膜21上曝光和显影感光树脂制成的密封件25b; 通过加热密封件25b来固化密封件25b; 通过将密封件25b附接到形成在基板1上的开关元件19来密封具有密封件25b的开关元件19; 并且在密封之后以下面的膜21为边界从密封件25b剥离基板1。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2011003530A Electronic device and method of manufacturing the same 有权
标题翻译：电子设备及其制造方法
公开(公告)号：JP2011003530A
公开(公告)日：2011-01-06
申请号：JP2010055045
申请日：2010-03-11
申请人： Fujitsu Ltd , 富士通株式会社
发明人： NAKATANI TADASHI , INOUE HIROAKI , YAMADA HITOSHI , UEDA TOMOSHI
IPC分类号： H01H59/00 , B81B3/00 , B81C3/00 , H01G5/16 , H01H49/00
CPC分类号： H01H59/0009 , B81B7/007 , B81B2201/014 , H01L2224/16225 , H01L2924/1461 , H01L2924/16195 , H01L2924/19041 , H01L2924/30105
摘要： PROBLEM TO BE SOLVED: To provide an electronic device capable of being structured as a wafer-level package while achieving reduced size and height.SOLUTION: An electronic device includes: a substrate 11; a stationary contact electrode 13 provided above the substrate; a movable contact electrode 12 provided so as to face the stationary contact electrode 13; a wall 17 provided on the substrate so as to surround the stationary and movable contact electrodes; a film member 20 fixed to the wall 17 and sealing a space including the movable contact electrode 12 and the stationary contact electrode 13; and a support 18 provided on an inner side of the wall 17 on the substrate and provided to support the film member 20 from within the space in addition to the movable contact electrode 12 and the stationary contact electrode 13.
摘要翻译：要解决的问题：提供一种能够被构造为晶片级封装的电子器件，同时实现减小的尺寸和高度。解决方案：电子器件包括：衬底11; 设置在基板上方的固定接触电极13; 设置为与固定接触电极13相对的可动接触电极12; 设置在基板上以围绕固定和可动接触电极的壁17; 固定在壁17上并密封包括可动接触电极12和固定接触电极13的空间的膜构件20; 以及设置在基板上的壁17的内侧的支撑体18，并且设置成除了可动接触电极12和固定接触电极13之外还在空间内支撑膜构件20。

4. 发明专利

JP2009238320A Storage device and storage method 审中-公开
标题翻译：存储设备和存储方法
公开(公告)号：JP2009238320A
公开(公告)日：2009-10-15
申请号：JP2008083622
申请日：2008-03-27
申请人： Fujitsu Ltd , 富士通株式会社
发明人： INOUE HIROAKI
IPC分类号： G11B20/18
CPC分类号： H03M13/353 , G11B20/18 , G11B20/1816 , G11B20/1833 , G11B2020/1843
摘要： PROBLEM TO BE SOLVED: To provide a storage device having a storage medium having a plurality of storage areas including a data write area and an error correction code write area, in which an error correction code having an error correction code length corresponding to each storage area is stored into the storage medium without changing the data write area of the storage medium.
SOLUTION: The storage device includes the storage medium having a plurality of storage areas having a data write area and an error correction code write area; an error correction code length storing memory for storing an error correction code length corresponding to an error rate for each storage area; and a control unit for designating the storage data to which data is to be written, determines an error correction code length corresponding to the designated storage area by referring to the error correction code length storing memory, generates an error correction code based on the data and the determined error correction code length, stores the generated error correction code to the error correction code write area, and the data to the data write area, and stores the error correction code exceeding the error correction code write area to the error correction code length write memory.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种存储装置，其具有包括数据写入区域和纠错码写入区域的多个存储区域的存储介质，其中纠错码长度对应于每个存储区域被存储到存储介质中，而不改变存储介质的数据写入区域。解决方案：存储装置包括具有多个具有数据写入区域和纠错码写入区域的存储区域的存储介质; 纠错码长度存储用于存储对应于每个存储区域的错误率的纠错码长度; 以及用于指定要写入数据的存储数据的控制单元，通过参考纠错码长度存储存储器来确定与指定存储区域相对应的纠错码长度，基于该数据生成纠错码，确定的纠错码长度将生成的纠错码存储到纠错码写入区域，并将数据存储到数据写入区域，并将超出纠错码写入区域的纠错码存储到纠错码长度写入记忆。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2013178967A Method of manufacturing microswitching element, and microswitching element 审中-公开
标题翻译：制造微波元件的方法和微波元件
公开(公告)号：JP2013178967A
公开(公告)日：2013-09-09
申请号：JP2012042461
申请日：2012-02-28
申请人： Fujitsu Ltd , 富士通株式会社
发明人： INOUE HIROAKI , NAKATANI TADASHI , KATSUKI TAKASHI
IPC分类号： H01H49/00 , H01H59/00
摘要： PROBLEM TO BE SOLVED: To manufacture a microswitching element having a peeling electrode without increasing a manufacturing process.SOLUTION: A method of manufacturing the microswitching element comprises the steps of: forming a first driving electrode 21, a movable electrode 23a and a first peeling electrode 25 on a surface layer 13 of a substrate 10 on which the surface layer 13 is formed; removing the surface layer 13 at a part of the periphery of a region in which the first driving electrode 21 and the movable electrode 23a are formed, and thereby forming a groove part 14 for forming a cantilever 15; forming a second driving electrode 22 over the first driving electrode 21 with a certain space in between, forming a fixed electrode 24 over the movable electrode 23a with a certain space in between, and forming a second peeling electrode 23b over the first peeling electrode 25 with a certain space in between; and removing the substrate 10 from the inside of the groove part 14, and thereby forming the cantilever 15 supported in a support part, by the surface layer 13 which is separated from the groove part 14.
摘要翻译：要解决的问题：制造具有剥离电极的微型开关元件，而不增加制造工艺。解决方案：一种制造微动开关元件的方法包括以下步骤：形成第一驱动电极21，可动电极23a和第一剥离电极 25，在其上形成表面层13的基板10的表面层13上; 在其中形成第一驱动电极21和可动电极23a的区域的周边的一部分处去除表面层13，从而形成用于形成悬臂15的槽部14; 在第一驱动电极21的上方形成有一定间隔的第二驱动电极22，在可动电极23a上形成一定间隔的固定电极24，并在第一剥离电极25上形成第二剥离电极23b，之间的一定空间; 并且从槽部14的内部除去基板10，从而通过与槽部14分离的表面层13形成支撑在支撑部中的悬臂15。

6. 发明专利

JP2010069572A Packaged micro movable device manufacturing method and packaged micro movable device 有权
标题翻译：包装微型可移动装置制造方法和包装微型可移动装置
公开(公告)号：JP2010069572A
公开(公告)日：2010-04-02
申请号：JP2008239710
申请日：2008-09-18
申请人： Fujitsu Ltd , 富士通株式会社
发明人： INOUE HIROAKI , KATSUKI TAKASHI , NAKAZAWA FUMIHIKO
IPC分类号： B81C1/00 , G01C19/56 , G01P9/04 , H01L23/04 , H01L23/08
CPC分类号： G01P15/125 , B81C1/00301 , G01C19/5719 , G01P1/023 , G01P15/0802 , H01L21/76898 , H01L23/481 , H01L2924/0002 , Y10T29/49128 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide packaged micro movable device manufacturing method and packaged micro movable device suitable for thinning a package. SOLUTION: A packaged device PD includes device layer parts (a device D and an outer wall part 70) and packaging members 80 and 90 joined to the device layer parts. In this manufacturing method, a wiring region 81A surrounded by a separation groove is formed in a first packaging wafer, and an insulating part 82 is formed in the separation groove. A side formed with the wiring region 81A in the first packaging wafer is joined to the first surface side of a device wafer including a plurality of sections to form the device D. In the first packaging wafer, a through hole passing through the wafer by passing the wiring region 81A is formed, and a conductive material 85 is filled into the through hole. A second packaging wafer is joined to the second surface side of the device wafer, and the first packaging wafer is made thin to expose the wiring region 81A. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供适合于减薄包装的包装微型可移动装置制造方法和包装的微型可移动装置。解决方案：封装装置PD包括装置层部件（装置D和外壁部分70）以及连接到装置层部分的包装件80和90。在该制造方法中，在第一包装用晶片中形成由分离槽包围的配线区域81A，在分离槽内形成绝缘部82。在第一包装晶片中形成有布线区域81A的一侧与包括多个部分的器件晶片的第一表面侧接合以形成器件D.在第一封装晶片中，通过通过晶片的通孔形成布线区域81A，并且导电材料85填充到通孔中。将第二包装晶片连接到器件晶片的第二表面侧，并且将第一封装晶片制成薄以暴露布线区域81A。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2008170402A Capacitance sensing type physical quantity sensor 审中-公开
标题翻译：电容感应型物理量传感器
公开(公告)号：JP2008170402A
公开(公告)日：2008-07-24
申请号：JP2007006403
申请日：2007-01-15
申请人： Fujitsu Ltd , Fujitsu Media Device Kk , 富士通メディアデバイス株式会社 , 富士通株式会社
发明人： KATSUKI TAKASHI , NAKAZAWA FUMIHIKO , ISHIKAWA HIROSHI , INOUE HIROAKI , TAKAHASHI YUJI , YAMAJI TAKAYUKI
IPC分类号： G01C19/56 , G01C19/5755 , G01P15/125 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide capacitance sensing type physical quantity sensor which can inhibit lowering of sensing accuracy due to unwanted vibration generated in sensing electrode or the like. SOLUTION: In this capacitance sensing type physical quantity sensor 3, either of first electrode 11 or second electrode 12 facing each other with a gap is relocated in one axial direction by external force to change facing distance or facing area between these first and second electrodes, detecting this as a variation in capacitance between electrodes. It is designed that the length for either one of the first electrode 11 or the second electrode 12 along a direction perpendicular to the above one axial direction is formed longer than the other electrode so as to allow one electrode to be protruded on both sides of the other electrode respectively by the length in three times or more of the gap. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供电容感测型物理量传感器，其可以抑制由于感测电极等中产生的不希望的振动导致的感测精度的降低。解决方案：在该电容感测型物理量传感器3中，通过外力将一个具有间隙的彼此面对的第一电极11或第二电极12的一个轴向重新定位，以改变它们之间的面向距离或面对面积第二电极，将其检测为电极之间的电容变化。设计成，沿着与上述一个轴向垂直的方向的第一电极11或第二电极12中的任一个的长度被形成为比另一个电极长，以便允许一个电极在第二电极11的两侧突出其他电极的长度分别为三倍以上的间隙。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2008096318A Vibration sensor and manufacturing method therefor 审中-公开
标题翻译：振动传感器及其制造方法
公开(公告)号：JP2008096318A
公开(公告)日：2008-04-24
申请号：JP2006279354
申请日：2006-10-13
申请人： Fujitsu Ltd , Fujitsu Media Device Kk , 富士通メディアデバイス株式会社 , 富士通株式会社
发明人： YAMAJI TAKAYUKI , ISHIKAWA HIROSHI , TAKAHASHI YUJI , KATSUKI TAKASHI , NAKAZAWA FUMIHIKO , INOUE HIROAKI
IPC分类号： G01C19/56 , G01P9/04
CPC分类号： G01C19/5607 , H03H9/0519 , H03H9/1021 , H03H9/21 , Y10T29/49002
摘要： PROBLEM TO BE SOLVED: To provide a vibration sensor having superior temperature characteristics of sensitivity, and to provide a manufacturing method therefor. SOLUTION: The vibration sensor and the manufacturing method therefor include a tuning fork type vibrator (10), having a base part and a plurality of arm parts extending from the base part, a mounting part (20) for mounting the tuning fork type vibrator (10), and a support part (40) having a constriction part (48) and making the mount part 20 to mount the tuning fork type vibrator (10). The constriction part, provided to the support part, relaxes the stresses caused by the difference in thermal expansion coefficients between the tuning fork type vibrator and the mounting part. Accordingly, the vibration sensor superior in the temperature characteristics of sensitivity and manufacturing method therefor are provided. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供具有优异的灵敏度温度特性的振动传感器，并提供其制造方法。解决方案：振动传感器及其制造方法包括：音叉型振动器（10），具有基部和从基部延伸的多个臂部，安装部（20），用于安装音叉和具有收缩部分（48）的支撑部分（40），并使安装部分20安装音叉型振动器（10）。提供给支撑部的收缩部能够缓和由音叉型振动器与安装部之间的热膨胀系数的差异引起的应力。因此，提供了灵敏度的温度特性优异的振动传感器及其制造方法。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2004111746A Semiconductor device and manufacturing method therefor 审中-公开
公开(公告)号：JP2004111746A
公开(公告)日：2004-04-08
申请号：JP2002273851
申请日：2002-09-19
申请人： Fujitsu Ltd , 富士通株式会社
发明人： ASADA HITOSHI , INOUE HIROAKI
IPC分类号： H01L21/28 , H01L21/336 , H01L21/8234 , H01L27/088 , H01L29/08 , H01L29/417 , H01L29/49 , H01L29/78
CPC分类号： H01L29/66659 , H01L21/823418 , H01L21/823468 , H01L29/0847 , H01L29/41775 , H01L29/4933 , H01L29/6656 , H01L29/7833 , H01L29/7835
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which can secure sufficient breakdown voltage, even if a silicide layer is formed on a source/drain region, and to provide a method of manufacturing the same.
SOLUTION: The semiconductor device comprises gate electrodes 26 formed on a semiconductor substrate 10, source region 45a having a lightly-doped source region 42a and a heavily-doped source region 44a, drain region 45b having a lightly doped drain region 42b and a heavily-doped drain region 44b, first silicide layer 40c formed on the source region, second silicide region 40d formed on the drain region, first conductor plug 54 connected to the first silicide layer, and second conductor plug 54 connected to the second silicide layer. The heavily-doped drain region is formed in the lightly-doped drain region, except for a peripheral part, while the second silicide layer is formed in the heavily-doped region, except for the peripheral parts.
COPYRIGHT: (C)2004,JPO

10. 发明专利

JP2012187664A Method for manufacturing electronic device 有权
标题翻译：制造电子器件的方法
公开(公告)号：JP2012187664A
公开(公告)日：2012-10-04
申请号：JP2011053100
申请日：2011-03-10
申请人： Fujitsu Ltd , 富士通株式会社
发明人： KATSUKI TAKASHI , INOUE HIROAKI , NAKAZAWA FUMIHIKO
IPC分类号： B81C3/00 , G01C19/5769
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing an electronic device in which the degree of vacuum inside a sealing cavity is enhanced.SOLUTION: The method for manufacturing the electronic device includes a process for forming a movable part 14a in a side of one main surface 11a of a first substrate 11 containing silicon, a process for forming the cavity 20b in a side of one main surface 20c of a second substrate 20 containing silicon, a process for irradiating at least one of the main surface of the first substrate 11 and the second substrate 20 with plasma containing atoms of either one of oxygen and nitrogen, a process after irradiation of the plasma for sealing the movable part 14a with the second substrate 20 while keeping the inside of the cavity 20b vacuum by joining the respective main surfaces of the first substrate 11 and the second substrate 20 in a vacuum in such a state that the cavity 20b is faced to the movable part 14a, and a process after sealing for annealing the first substrate 11 and the second substrate 20 to temperatures equal to or higher than a temperature at which the silicon reacts with the atoms.
摘要翻译：要解决的问题：提供一种其中密封腔内的真空度增强的电子设备的制造方法。解决方案：用于制造电子器件的方法包括在包含硅的第一衬底11的一个主表面11a的一侧形成可移动部分14a的工艺，在一个主体侧形成腔体20b的工艺包含硅的第二基板20的表面20c，用于向第一基板11和第二基板20的至少一个的主表面照射含有氧和氮中的任一个的原子的等离子体的处理，等离子体的照射之后的工序通过在空腔20b面对的状态下在真空中接合第一基板11和第二基板20的各个主表面，同时通过将空腔20b的内部保持真空来保持空腔20b的内部而密封可动部14a与第二基板20 可动部14a以及将第一基板11和第二基板20退火后的密封后的处理为与硅反应的温度以上的温度 e原子。版权所有（C）2013，JPO＆INPIT

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