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1. 发明专利

JP2002197815A MAGNETIC DISK DEVICE 审中-公开
公开(公告)号：JP2002197815A
公开(公告)日：2002-07-12
申请号：JP2001324270
申请日：2001-10-22
申请人： FUJITSU LTD , FUJITSU SINTER LTD
发明人： SUZUKI HIRONOBU , SATO YOSHIHIRO , ADACHI AKIYOSHI , SUZUKI YASUO
IPC分类号： G11B21/02 , H02K1/17 , H02K1/18 , H02K33/18
摘要： PROBLEM TO BE SOLVED: To provide a magnetic disk device that is provided with an enclosure containing a magnetic disk, a magnetic head, an actuator and a voice coil motor acting like a driving source of the actuator and with a clean magnetic circuit for the voice coil motor producing no toxic gas even at a high temperature. SOLUTION: A coil in the voice coil motor provided at an end of a rotor of the actuator is placed in a magnetic gap of the magnetic circuit for the voice coil motor consisting of a yoke 11 and a permanent magnet 12 fitted to the yoke 11, a projection to inhibit the movement of the permanent magnet 12 in a direction of a mount face of the permanent magnet 12 on the yoke 11 is formed to the mount face and the permanent magnet 12 is fitted onto the mount face by using a magnetic attracting force of the permanent magnet 12.

2. 发明专利

JP2000019068A WAVELENGTH DISPERSION-MEASURING DEVICE AND METHOD 失效
公开(公告)号：JP2000019068A
公开(公告)日：2000-01-21
申请号：JP18408898
申请日：1998-06-30
申请人： FUJITSU LTD
发明人： SUZUKI YASUO
IPC分类号： G01N21/21 , G01M11/00 , G01M11/02 , G01N21/27 , G01N21/41 , G02F1/35
摘要： PROBLEM TO BE SOLVED: To provide a measurement method and device for easily determining a zero dispersion wavelength by simply measuring the wavelength dispersion of an optical fiber. SOLUTION: Signal light from a wavelength variable light source 12 and excitation light from a wavelength variable light source 15 are inputted to a fiber 17 to be measured. At least one of the excitation light and the signal light has a large power to the extent for inducing the four-light-wave mixture phenomenon in the fiber 17 to be measured, thus generating an FWM beam in the fiber 17 to be measured. At a light reception side, the power of the FWM beam and the signal beam is measured and the occurrence efficiency of the FWM beam is calculated. Then, since the occurrence efficiency of the FWM beam depends on the dispersion value of the fiber 17 to be measured, the dispersion value of the fiber 17 to be measured is obtained from the occurrence efficiency of the FWM beam by using the dependency relationship. The measurement may be manual by an operator or automatic.

3. 发明专利

JPH0547000B2 失效
公开(公告)号：JPH0547000B2
公开(公告)日：1993-07-15
申请号：JP2504986
申请日：1986-02-07
申请人： FUJITSU LTD
发明人： TAKEUCHI HIROAKI , SUZUKI YASUO , AIDA ISAO
IPC分类号： H05K9/00 , H05K7/00

4. 发明专利

JPH05122347A SIMPLE TEST SYSTEM FOR ISDN SUBSCRIBER LINE 失效
公开(公告)号：JPH05122347A
公开(公告)日：1993-05-18
申请号：JP27817291
申请日：1991-10-25
申请人： FUJITSU LTD
发明人： SUZUKI YASUO
IPC分类号： H04M3/30
摘要： PURPOSE:To provide the simple test system for an ISDN subscriber line in which the job is easily implemented and the cost is low. CONSTITUTION:In the transmission system having a subscriber 110 receiving the ISDN service and a transmitter 600 connecting a network terminator 900 in the subscriber 110 via a subscriber line and multiplexing the signal from the subscriber 110, the transmitter 600 is provided with a test unit 160 generating a test signal, sending it to the subscriber line, allowing the network terminator 900 looping back and returning the signal based on a control signal inserted in the test signal and collating the returned test signal with the sent test signal.

5. 发明专利

JPH0451918B2 失效
公开(公告)号：JPH0451918B2
公开(公告)日：1992-08-20
申请号：JP18201283
申请日：1983-09-30
申请人： FUJITSU LTD
发明人： SUZUKI YASUO , HIRAO HIROSHI , SUZUKI YASUAKI
IPC分类号： G11C17/18 , G11C11/417 , G11C11/56 , G11C16/04 , H01L27/10

6. 发明专利

JPS62287661A MASK ROM 失效
公开(公告)号：JPS62287661A
公开(公告)日：1987-12-14
申请号：JP13143786
申请日：1986-06-06
申请人： FUJITSU LTD
发明人： SUZUKI YASUO , TAKEMAE YOSHIHIRO
IPC分类号： H01L21/8246 , H01L27/10 , H01L27/112
摘要： PURPOSE:To construct a memory cell, not accompanying any particular difficulties in manufacturing or in sense, for a 2-bit data memorizing mask ROM by a method wherein low-concentration diffusion is accomplished into a portion of a substrate just under a gate in the vicinity of a source and drain of a cell transistor. CONSTITUTION:In the process of constructing a memory cell of this design, a gate oxide film GI and gate electrode G are attached to a substrate SUB, impurity diffusion is accomplished for the formation by self-alignment of source.drain regions S, D, impurity ions same as the substrate in conductivity type are implanted into the gate-side ends of the source.drain regions, and then a heat treatment is performed for the formation of a p -region provided with an extension as indicated in the figure. Whether the p region is to be formed or not depends upon the data present in storage. Of the source.drain regions, the left-side one will be used as a source in some cases and, in other cases, the right.side one will be used as a source. This means that p -regions must take one of four positions: neither on the left side nor on the right side, on the left side, on the right side, or on both left and right sides. In this way, a memory cell is capable of a 2-bit function, replacing a 4-value level cell.

7. 发明专利

JPS6042554B2 失效
公开(公告)号：JPS6042554B2
公开(公告)日：1985-09-24
申请号：JP18307480
申请日：1980-12-24
申请人： FUJITSU LTD
发明人： SUZUKI YASUO , NAGASAWA MASANORI
IPC分类号： G11C11/41 , G11C11/413 , G11C11/418 , G11C17/12 , G11C17/18 , H03M7/00

8. 发明专利

JPS60113496A PRINTED BOARD MOUNTING FRAME 失效
公开(公告)号：JPS60113496A
公开(公告)日：1985-06-19
申请号：JP22101183
申请日：1983-11-24
申请人： FUJITSU LTD
发明人： SUZUKI YASUO , EJIRI MASAAKI , TAKEUCHI HIROAKI
IPC分类号： H05K7/16 , H05K7/14

9. 发明专利

JPS6061997A MEMORY EXCLUSIVE FOR MULTI-LEVEL READING 失效
公开(公告)号：JPS6061997A
公开(公告)日：1985-04-09
申请号：JP17079483
申请日：1983-09-16
申请人： FUJITSU LTD
发明人： SUZUKI YASUO , HIRAO HIROSHI , SUZUKI YASUAKI
IPC分类号： G11C16/04 , G11C11/56 , G11C29/00 , H01L27/10
摘要： PURPOSE:To read accurately the storage data of a multi-value memory even in case the resistance of a ground line is not negligible, by producing the reference voltage of an accurate level after compensating a voltage drop. CONSTITUTION:When a memory cell MC is selected by a column address CA and a row address RA, a current flows in a route of a power supply V, a bit line BL, a cell MC and a ground line 10. Then the output of a load circuit 32 is compared with a reference voltages S1-S3 by sense amplifiers 34-38. A cell group 44 for generation of reference voltage consists of the same transistor Q as a memory cell group. A current flows from the power supply V through the transistor Q selected by a column decoder 46 and the line 10, and a load circuit 50 produces an output S1. The voltage drop produced at the position of the selected transistor is equal to the variation of the read output voltage produced at the position of a cell of a memory cell group. Then the output S1 is set at the reference voltage to correct the difference of voltage drop due to positions. This ensures the reading with no error.

10. 发明专利

JPS58114394A SENSE AMPLIFIER CIRCUIT 失效
公开(公告)号：JPS58114394A
公开(公告)日：1983-07-07
申请号：JP22070882
申请日：1982-12-16
申请人： FUJITSU LTD
发明人： SUZUKI YASUO
IPC分类号： G11C11/409 , G11C11/4091
摘要： PURPOSE:To obtain a sense amplifier circuit which has a small amount of power consumption, by connecting a driver transistor in series to a load transistor in which each bit line is connected to the gate to form an FF circuit and at the same time providing a sense transistor. CONSTITUTION:Transistors TRQ1 and Q2 function as a load TR of a circuit, and the gate of the TRQ1 is connected to a bit line BL1 with the gate of the TRQ2 connected to a bit line BL2 respectively. A driver TRQ3 is connected in series to the TRQ1, and a driver TRQ4 is connected in series to the TRQ2. An FF circuit is formed with the TRQ3 and TRQ4. Furthermore a TRQ5 is connected between the line BL1 and the drain of the TRQ3, and the gate of a TRQ5 is connected to the gate of the TRQ3 as well as to the drain of the TRQ4. Then the TRQ6 is connected between the line BL2 and the drain of the TRQ4, and the gate of the TRQ6 is connected to the gate of the TRQ4 as well as to the drain of the TRQ3. The TRQ5 and Q6 cut off the load TR at the side of ''0'' when the sense amplifier is working. Thus the power consumption is reduced.

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