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1. 发明专利

JP2011094100A Cleaning composition, cleaning process, and process for producing semiconductor device 有权
标题翻译：清洁组合物，清洁工艺和生产半导体器件的方法
公开(公告)号：JP2011094100A
公开(公告)日：2011-05-12
申请号：JP2010116623
申请日：2010-05-20
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： TAKAHASHI TOMOI , TAKAHASHI KAZUYOSHI , MIZUTANI ATSUSHI , SEKI HIROYUKI , FUSHIMI HIDEO , KATO TOMOO
IPC分类号： C11D7/10 , C11D1/10 , C11D3/04 , C11D3/20 , C11D3/30 , C11D7/26 , C11D7/32 , H01L21/027 , H01L21/304 , H01L21/3065
CPC分类号： G03F7/425 , C09K13/00 , C09K13/06 , C11D7/08 , C11D7/265 , C11D7/3209 , C11D7/3245 , C11D7/34 , C11D7/5013 , C11D11/0047 , G03F7/422 , G03F7/423 , H01L21/02052 , H01L21/02057 , H01L21/02063 , H01L21/02068 , H01L21/02071 , H01L21/31133 , H01L21/32134 , H01L21/32136 , H01L21/32138 , H01L21/32139
摘要： PROBLEM TO BE SOLVED: To provide a cleaning composition capable of sufficiently removing a plasma etching residue and/or an ashing residue on a semiconductor substrate without damaging a wiring structure and an interlaminar insulation structure; and to provide a cleaning process and a process for producing a semiconductor device using the cleaning composition. SOLUTION: The cleaning composition for removing a plasma etching residue and/or an ashing residue formed on a semiconductor substrate includes: (component a) water; (component b) a hydroxylamine and/or salt thereof; (component c) a basic organic compound; and (component d) an organic acid. The cleaning composition has a pH of 7 to 9. There are also provided a cleaning process and a process for producing a semiconductor device emplo the cleaning composition. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供能够在不损害布线结构和层间绝缘结构的情况下在半导体基板上充分除去等离子体蚀刻残渣和/或灰化残留物的清洗组合物; 并提供清洁处理和使用该清洁组合物制造半导体器件的方法。解决方案：用于除去形成在半导体衬底上的等离子体蚀刻残渣和/或灰化残渣的清洁组合物包括：（组分a）水; （组分b）羟胺和/或其盐; （组分c）碱性有机化合物; 和（组分d）有机酸。清洁组合物的pH为7〜9。还提供了清洗方法和制造清洗组合物的半导体装置的方法。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2012031501A Method and liquid for preventing oxidation on metallic film surface 有权
标题翻译：用于防止金属膜表面氧化的方法和液体
公开(公告)号：JP2012031501A
公开(公告)日：2012-02-16
申请号：JP2010208053
申请日：2010-09-16
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： MIZUTANI ATSUSHI , INABA TADASHI , TAKAHASHI TOMOI , TAKAHASHI KAZUYOSHI
IPC分类号： C23F11/00 , H01L21/301
CPC分类号： C23F11/10 , C23F11/08
摘要： PROBLEM TO BE SOLVED: To provide a method and liquid for preventing oxidation, suppressing or preventing a metallic film surface on a semiconductor substrate from being corroded (eroded) due to oxidation, and also to provide a method and liquid for preventing oxidation, with which corrosion of a metallic film and an insulating layer is suppressed applying an antioxidation liquid and an excellent metallic film surface can be maintained utilizing the antioxidant effect, in particular, reducing the effect of water provided in large quantities in a dicing process.SOLUTION: When a metallic film surface on a semiconductor substrate is treated using an antioxidation liquid, a method for preventing oxidation on the metallic film surface uses a liquid comprising water added with at least a phosphorus-containing compound and a basic compound and adjusted to have a pH of 6-10 as the antioxidation liquid.
摘要翻译：要解决的问题：为了提供防止氧化的方法和液体，抑制或防止半导体衬底上的金属膜表面被氧化腐蚀（侵蚀），并且还提供用于防止氧化的方法和液体利用抗氧化效果，特别是降低在切割工艺中大量提供的水的效果，可以抑制金属膜和绝缘层的腐蚀而施加抗氧化液体并且优异的金属膜表面。解决方案：当使用抗氧化液处理半导体衬底上的金属膜表面时，金属膜表面上的防止氧化的方法使用包含添加至少含磷化合物和碱性化合物的水的液体，调节pH值为6-10作为抗氧化液体。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2012033774A Cleaning composition, cleaning method using the same, and manufacturing method of semiconductor device 有权
标题翻译：清洁组合物，使用其的清洁方法和半导体器件的制造方法
公开(公告)号：JP2012033774A
公开(公告)日：2012-02-16
申请号：JP2010172954
申请日：2010-07-30
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： TAKAHASHI TOMOI , INABA TADASHI
IPC分类号： H01L21/304 , C11D7/06 , C11D7/10 , C11D7/22 , C11D7/26 , C11D7/32 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a cleaning composition, a cleaning method using the same, and a manufacturing method of a semiconductor device, capable of solving a problem particular to a cleaning composition containing a specific detergent adjusted substantially to neutral, preventing corrosion by washing not only a semiconductor substrate and a metal layer but also a silicon, and sufficiently removing a plasma etching residue and an ashing residue generated during a manufacturing process.SOLUTION: The cleaning composition, containing in water: a detergent; a basic compound; and an acidic organic compound, is a cleaning composition adjusted substantially to neutral and contains a polymer compound.
摘要翻译：要解决的问题：为了提供清洁组合物，使用该清洁组合物的清洁方法和半导体器件的制造方法，能够解决特定于含有特定洗涤剂的清洁组合物的问题，该洗涤组合物基本上达到中性调节，防止通过不仅清洗半导体衬底和金属层而且通过洗涤硅，并且充分地去除在制造过程中产生的等离子体蚀刻残留物和灰化残留物的腐蚀。
解决方案：包含在水中的清洁组合物：洗涤剂; 一个基本的化合物; 和酸性有机化合物，是基本上调节为中性并含有高分子化合物的清洁组合物。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2011204909A Cleaning composition, and method of manufacturing semiconductor device 有权
标题翻译：清洁组合物及制造半导体器件的方法
公开(公告)号：JP2011204909A
公开(公告)日：2011-10-13
申请号：JP2010070821
申请日：2010-03-25
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： MIZUTANI ATSUSHI , FUSHIMI HIDEO , TAKAHASHI TOMOI , TAKAHASHI KAZUYOSHI
IPC分类号： H01L21/304 , C11D7/08 , C11D7/16 , C11D7/26 , C11D7/32 , H01L21/306 , H01L21/3213 , H01L21/768 , H01L23/522
CPC分类号： H01L21/02076 , C11D7/261 , C11D7/265 , C11D7/3209 , C11D11/0047 , H01L21/02063 , H01L21/02071
摘要： PROBLEM TO BE SOLVED: To provide a cleaning composition capable of sufficiently removing a plasma etching residue on a semiconductor substrate without damaging a wiring structure and an interlaminar insulation structure, and to provide a process for producing a semiconductor device using the cleaning composition.SOLUTION: The cleaning composition for removing a plasma etching residue formed on a semiconductor substrate contains (component a) 57-95 wt.% of water; (component b) 1-40 wt.% of polyhydroxy compound having secondary and/or tertiary hydroxyl groups; (component c) organic acid; and (component d) a quaternary ammonium compound, and its pH is 5-10. The method for manufacturing a semiconductor device includes a step for cleaning the plasma etching residue formed on the semiconductor substrate by the cleaning composition.
摘要翻译：要解决的问题：提供能够充分地除去半导体衬底上的等离子体蚀刻残留物而不损坏布线结构和层间绝缘结构的清洁组合物，并提供使用该清洁组合物制造半导体器件的方法。解决方案：用于除去形成在半导体衬底上的等离子体蚀刻残渣的清洁组合物含有（成分a）57-95重量％的水; （组分b）1-40重量％具有仲羟基和/或叔羟基的多羟基化合物; （组分c）有机酸; 和（组分d）季铵化合物，其pH为5-10。制造半导体器件的方法包括通过清洁组合物清洗形成在半导体衬底上的等离子体蚀刻残留物的步骤。

5. 发明专利

JP2012046685A Cleaning composition, cleaning method using the composition, and method of manufacturing semiconductor device 审中-公开
标题翻译：清洁组合物，使用该组合物的清洁方法和制造半导体器件的方法
公开(公告)号：JP2012046685A
公开(公告)日：2012-03-08
申请号：JP2010191974
申请日：2010-08-30
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： TAKAHASHI KAZUYOSHI , INABA TADASHI , MIZUTANI ATSUSHI , TAKAHASHI TOMOI
IPC分类号： C11D3/28 , C11D3/06 , C11D3/20 , C11D3/26 , C11D3/30 , C11D3/33 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide: a cleaning composition that solves a problem peculiar to a cleaning composition containing a specific cleaning agent substantially neutralized, prevents a metal layer of a semiconductor substrate, especially titanium nitride from being eroded, and removes plasma-etching residues and ashing residues caused during the manufacturing process; a cleaning method using the composition; and a method of manufacturing a semiconductor device.SOLUTION: The cleaning composition for semiconductor substrate contains: water; the cleaning agent; a basic organic compound; an acid organic compound; and a specific nitrogen-containing aromatic ring compound. The cleaning composition is substantially neutralized.
摘要翻译：要解决的问题：提供：一种解决含有基本中和的特定清洗剂的清洗组合物所特有的问题的清洗组合物，防止半导体衬底的金属层，特别是氮化钛被腐蚀，并除去等离子体 - 在制造过程中产生的残留物和灰化残留物; 使用该组合物的清洗方法; 以及半导体装置的制造方法。解决方案：半导体衬底的清洁组合物含有：水; 清洗剂; 碱性有机化合物; 酸性有机化合物; 和特定的含氮芳香环化合物。清洁组合物基本上被中和。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2011192743A Cleaning composition, and method of manufacturing semiconductor device 有权
标题翻译：清洁组合物及制造半导体器件的方法
公开(公告)号：JP2011192743A
公开(公告)日：2011-09-29
申请号：JP2010056286
申请日：2010-03-12
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： TAKAHASHI TOMOI , FUSHIMI HIDEO
IPC分类号： H01L21/304 , C11D7/06 , C11D7/08 , C11D7/10 , C11D7/16 , C11D7/26 , C11D7/32 , G03F7/42 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a cleaning composition for sufficiently removing plasma etching residue on a semiconductor substrate without damaging a wiring structure and interlayer insulation structure, and to provide a method of manufacturing a semiconductor device using the cleaning composition.
SOLUTION: The cleaning composition for removing plasma etching residue formed on a semiconductor substrate contains (component a) water, (component b) hydroxylamine and/or its salt, (component c) basic compound, (component d) organic acid, (component e) inorganic acid and/or its salt of ≥0.1 wt.% and
摘要翻译：要解决的问题：提供一种用于在半导体衬底上充分去除等离子体蚀刻残留物的清洁组合物，而不损坏布线结构和层间绝缘结构，并提供使用该清洁组合物制造半导体器件的方法。解决方案：用于除去形成在半导体衬底上的等离子体蚀刻残渣的清洁组合物含有（组分a）水，（组分b）羟胺和/或其盐，（组分c）碱性化合物，（组分d）有机酸，（组分e）无机酸和/或其盐≥0.1重量％和<0.5重量％。清洁组合物的pH为6-8。制造半导体器件的方法包括用清洁组合物清洗在半导体衬底上形成的等离子体蚀刻残留物的工艺。版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2010171362A Cleaning agent for semiconductor device and method for manufacturing the semiconductor device using the same 审中-公开
标题翻译：用于半导体器件的清洁剂及其制造使用该半导体器件的半导体器件的方法
公开(公告)号：JP2010171362A
公开(公告)日：2010-08-05
申请号：JP2009083047
申请日：2009-03-30
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： NISHIWAKI YOSHINORI , TAKAHASHI TOMOI , TAKAHASHI KAZUYOSHI
IPC分类号： H01L21/304 , C09K3/14 , C11D3/20 , C11D3/30 , C11D7/26 , C11D7/32
CPC分类号： C11D3/2075 , C11D3/33 , C11D11/0047 , H01L21/02074 , H01L21/76867 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a cleaning agent which is used in a cleaning process, after a planarization polishing process in a semiconductor device manufacturing process, can remove organic contamination and particle contamination on a surface of a semiconductor device, particularly on a surface of a semiconductor device with copper wirings without causing copper corrosion, and can make the surface of a substrate highly clean, and to provide a method for manufacturing a semiconductor device that uses the cleaning agent. SOLUTION: The cleaning agent contains a polycarboxylic acid and a diethylenetriamine penta acetic acid and is used after a chemical mechanical polishing process of a semiconductor device, having a barrier film for copper diffusion prevention and copper wirings on an insulating film containing an SiOC as a component with a dielectric constant of 3.0 or below. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供在清洁过程中使用的清洁剂，在半导体器件制造过程中的平面化抛光工艺之后，可以去除半导体器件的表面上的有机污染物和颗粒污染物，特别是在具有铜布线的半导体器件的表面而不引起铜腐蚀，并且可以使基板的表面高度清洁，并且提供一种制造使用该清洁剂的半导体器件的方法。解决方案：清洁剂含有多元羧酸和二亚乙基三胺五乙酸，并且在半导体器件的化学机械抛光工艺之后使用，其具有用于铜扩散防护的阻挡膜和在包含SiOC的绝缘膜上的铜布线作为介电常数为3.0以下的成分。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2010087258A Cleaning agent for semiconductor substrate surface, method of cleaning semiconductor device using the same 审中-公开
标题翻译：用于半导体衬底表面的清洁剂，使用其清洁半导体器件的方法
公开(公告)号：JP2010087258A
公开(公告)日：2010-04-15
申请号：JP2008254930
申请日：2008-09-30
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： NISHIWAKI YOSHINORI , TAKAHASHI KAZUYOSHI , TAKAHASHI TOMOI
IPC分类号： H01L21/304 , C11D3/20 , C11D3/28 , C11D7/26 , C11D7/32
摘要： PROBLEM TO BE SOLVED: To provide a cleaning agent for use in a cleaning step after a planarization polishing step in the step of manufacturing a semiconductor device which can remove organic substance pollution and particle pollution in short time on the surface of the semiconductor device, especially on the surface of the semiconductor device on which copper wiring is laid without causing the corrosion of the copper wiring and which can excellently clean the surface of a substrate, and a cleaning method using the same.
SOLUTION: A cleaning agent is used after a chemical-mechanical polishing step in the step of manufacturing a semiconductor device on the surface of which copper wiring is laid. The cleaning agent for the surface of a semiconductor substrate contains a specific triazole compound or a specific tetrazole compound as a corrosion inhibitor compound.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种在半导体器件的制造步骤中的平坦化抛光步骤之后的清洁步骤中使用的清洁剂，其能够在半导体表面上短时间地除去有机物污染和颗粒污染装置，特别是在布置有铜布线的半导体器件的表面上，而不会引起铜布线的腐蚀并且可以极好地清洁基板的表面，以及使用该布线的清洁方法。解决方案：在布置铜布线的表面上制造半导体器件的步骤中，在化学机械抛光步骤之后使用清洁剂。用于半导体衬底表面的清洁剂含有特定的三唑化合物或特定的四唑化合物作为腐蚀抑制剂化合物。版权所有（C）2010，JPO＆INPIT

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