专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2010258054A Surface-emitting semiconductor laser, surface-emitting semiconductor laser device, optical transmission device, optical information processing device, and method of manufacturing surface-emitting semiconductor laser 有权
标题翻译：表面发射半导体激光器，表面发射半导体激光器件，光学传输器件，光学信息处理器件和制造表面发射半导体激光器的方法
公开(公告)号：JP2010258054A
公开(公告)日：2010-11-11
申请号：JP2009103555
申请日：2009-04-22
申请人： Fuji Xerox Co Ltd , 富士ゼロックス株式会社
发明人： MATSUSHITA KAZUMASA , OMORI SEIYA , YOSHIKAWA MASAHIRO , KOJIMA TOMOAKI
IPC分类号： H01S5/24 , H01S5/22
摘要： PROBLEM TO BE SOLVED: To provide a surface-emitting semiconductor laser that suppresses peeling of an insulating protective film near a columnar structure.
SOLUTION: The surface-emitting semiconductor laser 10 includes a substrate 12, an n-type lower DBR 16 including a buffer layer 14, an active layer 20, a p-type upper DBR 22, a post P formed by etching a semiconductor layer from the upper DBR 22 to the lower DBR 16, a contact groove 32 reaching the buffer layer 14 through an opening 26B of the insulating protective film 26 at a bottom of the post P, an n-side electrode 34 electrically connected to the buffer layer 14, a p-side electrode 28 electrically connected to the upper DBR 22 through an opening 26A of the insulating protective film 26 at a top of the post P, and a peeling prevention groove 50 formed in the lower DBR 16 between the contact groove 32 and post P and preventing the insulating protective film from being peeled.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供抑制柱状结构附近的绝缘保护膜的剥离的表面发射半导体激光器。解决方案：表面发射半导体激光器10包括衬底12，包括缓冲层14的n型下DBR 16，有源层20，p型上DBR 22，通过蚀刻形成的柱P 从上DBR22到下DBR16的半导体层，通过绝缘保护膜26的开口26B在柱P的底部到达缓冲层14的接触槽32，与端子P电连接的n侧电极34 缓冲层14，p侧电极28，通过绝缘保护膜26在柱P的顶部电连接到上DBR22，以及形成在下DBR 16中的防剥离槽50，位于触点凹槽32和柱P，并防止绝缘保护膜被剥离。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2007180563A Laser light source 有权
标题翻译：激光源
公开(公告)号：JP2007180563A
公开(公告)日：2007-07-12
申请号：JP2007009141
申请日：2007-01-18
申请人： Fuji Xerox Co Ltd , 富士ゼロックス株式会社
发明人： OMORI SEIYA
IPC分类号： H01S5/022 , B41J2/44 , G02B26/10 , H01S5/024 , H04N1/113
摘要： PROBLEM TO BE SOLVED: To provide a laser light source capable of reducing color density difference and color difference in the image.
SOLUTION: A laser array light source 40 is structured in such a manner that a sub-mount 44 is joined with an adhesive 46 on a heat sink 42 and a laser array chip 48 is mounted on the sub-mount 44 via a contact electrode 50. A trench 54 is formed between each of light-emitting points 52. In addition, a trench 58 is formed on each position corresponding to the trench 54 on the sub-mount 44. The trenches 54 and 58 make the thermal interference resistance between each laser higher than the thermal resistance between the laser array chip 48 and heat sink 42, thus improving the heat dissipation performance for reduction of light volume variations between each laser.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供能够降低图像中的色差差和色差的激光光源。解决方案：激光阵列光源40被构造成使得副安装座44与散热器42上的粘合剂46接合，并且激光阵列芯片48经由接触电极50.在每个发光点52之间形成沟槽54.此外，在对应于子安装件44上的沟槽54的每个位置上形成沟槽58.沟槽54和58产生热干扰每个激光器之间的电阻高于激光阵列芯片48和散热器42之间的热阻，从而提高了用于减少每个激光器之间的光量变化的散热性能。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2006302981A Multi-spot surface-emitting laser diode and its drive method 有权
标题翻译：多点表面发射激光二极管及其驱动方法
公开(公告)号：JP2006302981A
公开(公告)日：2006-11-02
申请号：JP2005119161
申请日：2005-04-18
申请人： Fuji Xerox Co Ltd , 富士ゼロックス株式会社
发明人： YOSHIKAWA MASAHIRO , SAKAMOTO AKIRA , OMORI SEIYA , MIYAMOTO YASUMASA , HANDA KOTARO
IPC分类号： H01S5/062 , H01S5/183 , H01S5/42
摘要： PROBLEM TO BE SOLVED: To provide a multi-spot vertical cavity surface-emitting semiconductor laser diode, wherein laser emission points can be switched so as to prevent deviation of the optical axis. SOLUTION: The VCSEL1 has a first set of mesas 10, 12, 14, and 16 and a second set of mesas 20, 22, 24, and 26 arranged on a substrate. The first and second sets of mesas are arranged symmetrically with respect to a reference point C on the substrate. The first set of mesas 10-16 are mutually connected by an interconnection layer 18 and are connected to an electrode pad 40, while the second set of mesas 20-26 are mutually connected by an interconnection layer 28 and are connected to an electrode pad 42. The first set of mesas 10-16 and the second set of mesas 20-26 can be driven independently. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供可以切换激光发射点以防止光轴偏离的多点垂直腔表面发射半导体激光二极管。解决方案：VCSEL1具有第一组台面10,12,14和16以及布置在衬底上的第二组台面20,22,24和26。第一组和第二组台相对于衬底上的参考点C对称地布置。第一组台面10-16通过互连层18相互连接并连接到电极焊盘40，而第二组台面20-26通过互连层28相互连接并连接到电极焊盘42 第一组台面10-16和第二组台面20-26可独立驱动。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2006294810A Surface-emitting semiconductor laser array, and optical transmission system using the same 有权
标题翻译：表面发射半导体激光阵列和使用其的光传输系统
公开(公告)号：JP2006294810A
公开(公告)日：2006-10-26
申请号：JP2005112405
申请日：2005-04-08
申请人： Fuji Xerox Co Ltd , 富士ゼロックス株式会社
发明人： OMORI SEIYA , SAKAMOTO AKIRA , MIYAMOTO YASUMASA , YOSHIKAWA MASAHIRO , HANDA KOTARO
IPC分类号： H01S5/42 , H01S5/183 , H01S5/187
CPC分类号： H01S5/423 , H01S5/02212 , H01S5/02284 , H01S5/18311 , H01S5/18394 , H01S5/4081 , H01S2301/18
摘要： PROBLEM TO BE SOLVED: To provide a multi-spot VCSEL array of which an outgoing near field pattern of each light emitter is adjusted.
SOLUTION: The VCSEL array comprises light emitters S1 and S2 arrayed in one dimension or two dimension. The light emitters S1 and S2 comprise a first reflecting mirror 31, a second reflecting mirror 34, an active region 32 and current constriction layer 33 between the first and second reflecting mirrors, and an outgoing opening 36 above the second reflecting mirror on a substrate 30. The light emitters S1 and S2 are simultaneously driven to emit laser beam from the outgoing opening 36. The near field pattern of the light emitter S1 is eccentric for asymmetry relative to the light emitter S2, and that of the light emitter S2 is eccentric for asymmetry relative to the light emitters S1.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供调整每个发光体的出射近场图案的多点VCSEL阵列。解决方案：VCSEL阵列包括以一维或二维排列的发光体S1和S2。光发射器S1和S2包括在第一和第二反射镜之间的第一反射镜31，第二反射镜34，有源区32和电流收缩层33以及衬底30上的第二反射镜上方的出射开口36 光发射器S1和S2同时被驱动以从出射开口36发射激光束。光发射器S1的近场图案相对于发光体S2是偏心的，用于不对称，并且光发射器S2的近场图案偏心相对于发光体S1的不对称性。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2008066511A Optical transmission module, method of manufacturing optical transmission module, and optical transmission apparatus 有权
标题翻译：光传输模块，制造光传输模块的方法和光传输设备
公开(公告)号：JP2008066511A
公开(公告)日：2008-03-21
申请号：JP2006242745
申请日：2006-09-07
申请人： Fuji Xerox Co Ltd , 富士ゼロックス株式会社
发明人： SAKASAI KAZUHIRO , UENO OSAMU , KYOZUKA SHINYA , OTANI OSAMU , OMORI SEIYA , NAKAMURA TAKESHI
IPC分类号： H01S5/022
CPC分类号： H01L2224/48247 , H01L2224/48257 , H01L2224/49113 , H01L2224/49171 , H01L2924/181 , H01L2924/19107 , H01L2924/3011 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide an optical transmission module capable of performing inspection by large power application to a luminescent device, and to provide a method of manufacturing the optical transmission module and an optical transmission apparatus. SOLUTION: During an acceleration test of a luminescent device 24, a predetermined drive current is supplied from an external power source to an anode terminal A of a lead frame 32. The drive current is supplied from the lead frame 32 to the luminescent device 24 through a ferrite chip inductor 28 and an intermediate electrode pad 26. Since the luminescent device 24 is directly driven by use of the outer power source without using a drive IC22 in this manner, current, ranging from minute one to large one, can be stably supplied to the luminescent device 24, thus making it possible to perform the acceleration test of the luminescent device 24 in a stable manner. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够通过大功率应用对发光装置进行检查的光传输模块，并且提供一种制造光传输模块和光传输装置的方法。解决方案：在发光装置24的加速试验期间，将预定的驱动电流从外部电源提供给引线框架32的阳极端子A.驱动电流从引线框32提供给发光器件24通过铁氧体芯片电感器28和中间电极焊盘26.由于通过使用外部电源直接驱动发光器件24而不使用驱动IC22，所以从一分钟到一个大小的电流可以稳定地供给到发光装置24，能够稳定地进行发光装置24的加速试验。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2004200210A Surface emitting type semiconductor laser and its manufacturing method 有权
公开(公告)号：JP2004200210A
公开(公告)日：2004-07-15
申请号：JP2002363485
申请日：2002-12-16
申请人： Fuji Xerox Co Ltd , 富士ゼロックス株式会社
发明人： OMORI SEIYA
IPC分类号： H01S3/08 , H01S5/00 , H01S5/028 , H01S5/042 , H01S5/18 , H01S5/183
CPC分类号： H01S5/18311 , H01L2224/48091 , H01L2224/73265 , H01S5/02212 , H01S5/02228 , H01S5/0425 , H01S5/18358 , H01S5/18388 , H01S2301/176 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a surface emitting type semiconductor laser in which reliability is improved by suppressing the release of a semiconductor layer from an interlayer insulating film. SOLUTION: The surface emitting type semiconductor laser includes a substrate 12, a plurality of semiconductor layers 13-23 laminated on the substrate 12, a mesa 3 formed on the plurality of the semiconductor layers and having a laser beam emitting port, and the interlayer insulating film 24 covering the plurality of the semiconductor layers on at least the side of the mesa and the periphery of the mesa. The end of the interlayer insulating film covering the peripheral side of the mesa is terminated at the inside from the cutting surface of the substrate. COPYRIGHT: (C)2004,JPO&NCIPI

7. 发明专利

JP2003324250A Surface-emitting semiconductor laser 审中-公开
标题翻译：表面发射半导体激光器
公开(公告)号：JP2003324250A
公开(公告)日：2003-11-14
申请号：JP2002127681
申请日：2002-04-26
申请人： Fuji Xerox Co Ltd , 富士ゼロックス株式会社
发明人： OMORI SEIYA , NAKAYAMA HIDEO , YAMAMOTO MASACHIKA , ISHII RYOJI
IPC分类号： H01S5/183
摘要： PROBLEM TO BE SOLVED: To provide a surface-emitting semiconductor laser improving the life of a laser element and having a selected oxide layer structure, and to provide a method for manufacturing the semiconductor laser. SOLUTION: In the surface-emitting laser, a laser element of post structure is provided with a current narrowing layer 18 obtained by oxidizing a part of a semiconductor layer containing AlAs by an Al oxidation layer 18a, and crystal defect reduced layers 19 formed on upper and lower surfaces of the current narrowing layer 18 as semiconductor layers having grating constants each close to the grating constant of the Al oxidation layer 18a and containing In, P, Al or Ga as an added substance or composed of a mixed crystal of these substances In, P, Al, and Ga. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种表面发射半导体激光器，其改善激光元件的寿命并具有选定的氧化物层结构，并提供一种半导体激光器的制造方法。解决方案：在表面发射激光器中，柱结构的激光元件设置有通过氧化Al氧化层18a的含有AlAs的半导体层的一部分而得到的电流变窄层18，以及晶体缺陷减少层19 形成在电流变窄层18的上表面和下表面上，作为具有各自接近于Al氧化层18a的光栅常数的光栅常数的半导体层，并且含有In，P，Al或Ga作为添加物质，或者由这些物质In，P，Al和Ga。版权所有（C）2004，JPO

8. 发明专利

JP2008034638A Method for manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2008034638A
公开(公告)日：2008-02-14
申请号：JP2006206612
申请日：2006-07-28
申请人： Fuji Xerox Co Ltd , 富士ゼロックス株式会社
发明人： MUKOYAMA NAOTAKA , OMORI SEIYA , MURAKAMI AKEMI , ISHII RYOJI , KONDO TAKASHI
IPC分类号： H01L21/52 , H01L31/02 , H01S5/022 , H01S5/187
CPC分类号： H01L2224/48091 , H01L2224/73265 , H01L2224/92247 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which enables die-bonding while the size of chips is reduced.
SOLUTION: In the method for manufacturing VCSEL, die-bonding tape 14 for supporting chips 12 which are cut to the size 100 μm square or smaller and are uniformly separated from one another is placed on a sub-mount 16. Then the sub-mount 16 are cut into the outer size larger than that of the chips 12 for forming chips 30 to be mounted. The chips 30 to be mounted have such a size that they can be sucked by a collet 20 for a die bonder. A chip 30 to be mounted which is gripped by the collet 20 is transferred to above a die pad 32 and is bonded to it.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种制造半导体器件的方法，该半导体器件能够在芯片尺寸减小的同时进行芯片接合。解决方案：在用于制造VCSEL的方法中，用于将切割成100μm或更小的尺寸并且彼此均匀分离的用于支撑芯片12的芯片粘合带14放置在子座16上。然后，副安装座16被切割成大于芯片12的尺寸，以形成要安装的芯片30。要安装的芯片30具有这样的尺寸，即它们可以被用于管芯接合器的夹头20吸入。由夹头20夹持的要安装的芯片30被传送到芯片焊盘32的上方并与之接合。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2008034637A Surface-emitting semiconductor laser and its manufacturing method 有权
标题翻译：表面发射半导体激光器及其制造方法
公开(公告)号：JP2008034637A
公开(公告)日：2008-02-14
申请号：JP2006206611
申请日：2006-07-28
申请人： Fuji Xerox Co Ltd , 富士ゼロックス株式会社
发明人： OMORI SEIYA
IPC分类号： H01S5/183
摘要： PROBLEM TO BE SOLVED: To improve yield and to reduce costs by increasing the dielectric strength voltage of a region where a metal layer such as an electrode pad for external connection is formed. SOLUTION: A VCSEL includes an n-type lower DBR 12, an active layer 14, a current constriction layer 16, and a p-type upper DBR 18 on an n-type GaAs substrate 10. A post P is formed by removing a semiconductor layer from the upper DBR 18 up to a part of the lower DBR 12. A multilayer insulating film is formed between an electrode pad 28 which is electrically connected with the upper DBR 18 on the top of the post P and the n-type lower DBR 12. The dielectric strength voltage is improved by the multilayer insulating film. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：通过增加形成诸如用于外部连接的电极焊盘的金属层的区域的介电强度电压来提高产量并降低成本。解决方案：VCSEL在n型GaAs衬底10上包括n型下DBR 12，有源层14，电流限制层16和p型上DBR 18。柱P由从上DBR18到下DBR12的一部分去除半导体层。在与柱P的顶部上的上DBR 18电连接的电极焊盘28之间形成多层绝缘膜，通过多层绝缘膜改善介电强度电压。版权所有（C）2008，JPO＆INPIT

10. 发明专利

JP2005216925A Vertical cavity surface emitting laser array 有权
标题翻译：垂直孔表面发射激光阵列
公开(公告)号：JP2005216925A
公开(公告)日：2005-08-11
申请号：JP2004018461
申请日：2004-01-27
申请人： Fuji Xerox Co Ltd , 富士ゼロックス株式会社
发明人： OMORI SEIYA , NAKAYAMA HIDEO , ISHII RYOJI , MURAKAMI AKEMI
IPC分类号： H01S5/42
摘要： PROBLEM TO BE SOLVED: To provide a vertical cavity surface emitting laser array reducing a temperature difference between laser elements as much as possible and having more uniform characteristics.
SOLUTION: The vertical cavity surface emitting laser array 110 has a substrate 120, a plurality of the laser elements 130 disposed in a matrix shape on the substrate and an electrode E for supplying a plurality of the laser elements with a current. A plurality of the laser elements 130 are arranged in regions excepting at least a central section. Accordingly, the temperature differences among each laser element are reduced by inhibiting the effect of the temperature rise of the central section, and the characteristics of the array, that is, an oscillation wavelength, an optical output and an average life can be equalized.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种垂直腔表面发射激光器阵列，其尽可能地减少激光元件之间的温度差并且具有更均匀的特性。解决方案：垂直腔表面发射激光器阵列110具有基板120，在基板上以矩阵形状设置的多个激光元件130以及用于向多个激光元件供给电流的电极E. 多个激光元件130布置在除了至少中心部分之外的区域中。因此，通过抑制中央部的温度上升的影响，能够使各激光元件之间的温度差降低，能够使阵列的特性，即振荡波长，光输出和平均寿命相等。版权所有（C）2005，JPO＆NCIPI

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式