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    • 1. 发明专利
    • THRESHOLD VALUE CONTROL CIRCUIT
    • JPH10209825A
    • 1998-08-07
    • JP985197
    • 1997-01-23
    • FUJITSU LTDNIPPON TELEGRAPH & TELEPHONE
    • IDE SATOSHIOKUMURA YASUYUKI
    • G01R19/04H03K5/08
    • PROBLEM TO BE SOLVED: To prevent the generation of the deviation of a threshold level, and to identify a non-signal by outputting a level held higher than a non-signal level only by a forced offset value at the time of inputting no signal, and outputting the voltage-division value of signal amplitude as a threshold level when the input signal level is more than a prescribed value. SOLUTION: A peak detecting circuit 10 with a dead zone outputs a level almost equal to a non-signal level at the time of inputting no signal, and when the level of the input signal is more than a prescribed value, the circuit 10 outputs a 1 side output level lower only by level shift amounts equal to VOF×[(R1 +R0 )/R0 ]. In this case, the VOF indicates a forced offset value, and the R0 and R1 indicate resistance values. A voltage dividing circuit operate voltage division at R1 :R0 to 1 side and 0 side output levels, and a level shift circuit 12 outputs a level held higher than the non-signal level only by the forced offset value VOF at the time of inputting no signal, and outputs the voltage-division value at the R1 :R0 of signal amplitude as a threshold level when the level of the input signal is more than a prescribed value.
    • 3. 发明专利
    • THRESHOLD SIGNAL GENERATING CIRCUIT AND DIGITAL SIGNAL RECOVERY CIRCUIT PROVIDED WITH THE GENERATING CIRCUIT
    • JPH1127115A
    • 1999-01-29
    • JP17943997
    • 1997-07-04
    • FUJITSU LTDNIPPON TELEGRAPH & TELEPHONE
    • IDE SATOSHIKAJIWARA TAKAFUMI
    • H03K5/08
    • PROBLEM TO BE SOLVED: To suppress noise in a non-signal state over a wide dynamic range of an input signal in the digital signal recovery circuit consisting of a voltage division circuit that generates a threshold signal level resulting from a prescribed voltage division of an output of a bottom detection circuit and an output of a maximum value detection circuit. SOLUTION: In a state of a non-signal input, an output PD of a peak detection circuit and an output BD of a bottom detection circuit are equal to each other as a reset state of the circuit from the standpoint of the input signal state. However, since an output LS of a level shift circuit is set higher than the output BD by a prescribed level, the output LS is higher than the output PD, and then the output LS is selected as a maximum level detection signal MX and a threshold signal level TH is higher than the output BD by, e.g. LS/2. Noise in a non-signal state is suppressed by selecting the level LS/2 to be sufficiently higher than a peak level of the noise. In the case of the input state receiving a positive pulse signal, the output PD is higher than the output LS. Thus, the output PD is selected as the maximum level detection signal MX, and the threshold signal level TH is higher than the output BD by a level PD/2, which is a half of the input level.
    • 4. 发明专利
    • Optical transmission device and optical transmission method
    • 光传输设备和光传输方法
    • JP2013143759A
    • 2013-07-22
    • JP2012004502
    • 2012-01-12
    • Fujitsu Ltd富士通株式会社
    • IDE SATOSHIIKEUCHI AKIRA
    • H04B10/40H04B10/50H04B10/556H04B10/60
    • H04B10/40
    • PROBLEM TO BE SOLVED: To allow an optical transmission operation to continue even at a high temperature exceeding the specification temperature of a light emitting element.SOLUTION: An optical transmission device 100 has: an optical transmitter 101 which includes a light emitting element 102 and a light emitting element drive circuit 104; a temperature sensor 141 which detects the temperature of the optical transmitter 101; and a control part 150 which, when the temperature detected by the temperature sensor 141 is the specification temperature of the light emitting element 102 or higher, switches an operational mode of the optical transmitter 101 from a normal mode to a low power mode and reduces thermal effect on the light emitting element 102 to continue the operation of the light emitting element 102. The control part 150 executes the following controls in combination: lowering transmission speed of a transmission interface circuit 130 and a light emitting element drive circuit 104 at the time of low power mode; stopping a band expansion operation of the light emitting element drive circuit 104; lowering power of the light emitting element 102; and reducing the number of transmission channels of the transmission interface circuit 130 and the light emitting element drive circuit 104.
    • 要解决的问题:即使在超过发光元件的规格温度的高温下也允许光传输操作继续。解决方案:光传输装置100具有:光发射机101,其包括发光元件102和 发光元件驱动电路104; 检测光发射机101的温度的温度传感器141; 以及控制部150,当由温度传感器141检测到的温度是发光元件102的规格温度以上时,将光发送器101的工作模式从正常模式切换为低功率模式,并降低热 影响发光元件102以继续发光元件102的操作。控制部150组合执行以下控制:降低传输接口电路130和发光元件驱动电路104的传输速度 低功耗模式; 停止发光元件驱动电路104的频带扩展动作; 降低发光元件102的功率; 并且减少传输接口电路130和发光元件驱动电路104的传输通道的数量。
    • 5. 发明专利
    • Optical receiver, optical receiving circuit, and optical receiving method
    • 光接收机,光接收电路和光接收方式
    • JP2010130588A
    • 2010-06-10
    • JP2008305656
    • 2008-11-28
    • Fujitsu Ltd富士通株式会社
    • SUGAWARA MARIKOTSUNODA YUKITOIDE SATOSHI
    • H04B10/2507H04B10/516H04B10/556H04B10/61H04B10/69
    • H04B10/677
    • PROBLEM TO BE SOLVED: To provide: an optical receiver which can reduce an error rate in the identification of data; an optical receiving circuit; and an optical receiving method. SOLUTION: After an optical signal output from a delay interference instrument is converted to an electric signal, a data signal is generated which is a difference between the positive-phase component and the negative-phase component of the electric signal, a complementary signal is generated which is the sum of the positive-phase component and the negative-phase component of the electric signal, and a difference between the generated data signal and the generated complementary signal is calculated. Thus, the electric signal is output with fluctuations suppressed in phase potential. COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供:可以减少数据识别中的错误率的光接收机; 光接收电路; 和光接收方法。 解决方案:从延迟干扰仪输出的光信号转换为电信号后,产生数据信号,该信号是电信号的正相分量与负相分量之差,互补 产生信号,其是电信号的正相分量和负相位分量的和,并且计算所生成的数据信号和产生的互补信号之间的差。 因此,电信号以相位电位抑制的波动输出。 版权所有(C)2010,JPO&INPIT
    • 7. 发明专利
    • Optical switch controller and moving body controller
    • 光开关控制器和移动体控制器
    • JP2005099682A
    • 2005-04-14
    • JP2004107982
    • 2004-03-31
    • Fujitsu Ltd富士通株式会社
    • IDE SATOSHIMORI KAZUYUKITAKAHASHI TAKESUKEMATSUYAMA SATORU
    • G02B26/08G02B6/35H04Q11/00
    • G02B6/3588G02B6/3518G02B6/3556G02B6/357G02B6/3584H04Q11/0005H04Q2011/003H04Q2011/0039
    • PROBLEM TO BE SOLVED: To conduct highly precise control so as to reduce residual vibration, while conducting moving control of a moving body such as a tilt mirror or the like. SOLUTION: A processing section 11 outputs driving signals which control the angle of a tilt mirror 1 and the drive signals are D/A converted by a D/A converter 12, raised to higher voltages by a high voltage amplifier 13 and supplied to the tilt mirror 1. The capacitance of the tile mirror 1 is varied corresponding to a change in the angle of the tilt mirror 1. A mirror angle detection section 14 detects the capacitance and feeds back the detected capacitance to the processing section 11 as a correction value. The processing section 11 corrects the drive signals by using the correction value which is obtained, while the angle of the tile mirror 1 is actually varied. Thus, angular control of the tilt mirror 1 is conducted in a highly precise manner. COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:在进行诸如倾斜镜等移动体的移动控制的同时,进行高精度的控制以减少残余振动。 解决方案:处理部分11输出控制倾斜镜1的角度并且驱动信号由D / A转换器12转换为D / A的驱动信号,由高压放大器13升高到更高的电压,并提供 相对于倾斜镜1的角度的变化,瓦镜1的电容变化。镜角检测部14检测电容,并将检测到的电容反馈到处理部11,作为 校正值。 处理部分11通过使用所获得的校正值来校正驱动信号,同时瓦片镜1的角度实际上是变化的。 因此,以高度精确的方式进行倾斜镜1的角度控制。 版权所有(C)2005,JPO&NCIPI
    • 9. 发明专利
    • REFERENCE CURRENT AND VOLTAGE CIRCUIT AND DIFFERENTIAL AMPLIFICATION DEVICE
    • JPH1049244A
    • 1998-02-20
    • JP19881796
    • 1996-07-29
    • FUJITSU LTD
    • IDE SATOSHI
    • G05F3/24H03F1/30H03F3/45
    • PROBLEM TO BE SOLVED: To provide an amplification device which has variation in amplification gain suppressed as to an amplification device which uses a MOS-FET. SOLUTION: The device has a 1st MOS-FET and a 2nd MOS-FET which has nearly the same characteristics with the said FET and also has a reference resistance connected to its source or drain, the sources of those MOS-FETs or reference resistances connected to the source of the 1st MOS-FET and the source of the 2nd MOS-FET are connected in common, and the ratio of currents flowing to those MOS-FETs is held at a previously set value. Further, a control means is provided which controls the composite current of currents flowing to those MOS-FETs so that a potential which is nearly equal to the difference voltage between the gate-source voltage of the 1st MOS-FET and the gate-source voltage of the 2nd MOS-FET is applied across the reference voltages; and the controlled composite current is used as a reference current and a voltage developed at the source-side terminal of the MOS-FETs connected in common is used as a reference voltage.
    • 10. 发明专利
    • SEMICONDUCTOR DEVICE
    • JPH06140668A
    • 1994-05-20
    • JP28777092
    • 1992-10-26
    • FUJITSU LTD
    • IDE SATOSHI
    • H01L33/06H01L33/14H01L33/30H01L33/40H01S5/00H01L33/00H01S3/18
    • PURPOSE:To enable the structure of suppressing the diffusion of acceptor impurities from a p-type layer to a low-impurity concentration active layer, by using the p-type layer contained especially in acceptor impurities, concerning a III-V compound semiconductor device. CONSTITUTION:A group III-V compound semiconductor layer 11 performing capture action of acceptor impurities is made on the p-type semiconductor layer 10 of group III-V compound containing acceptor impurities. A III-V compound semiconductor active layer 13 low in impurity concentration is made on this semiconductor layer 11. That is, the diffusion of impurities from a substrate 10 to the active layer 13 is suppressed by the acceptor impurity capture action of the III-V compound semiconductor layer. The diffusion capture action is brought about by the mutual action between lattice defect and acceptor impurities. Accordingly, if capture regions are provided in a plurality of sections, the influence of diffusion to the active layer 13 can be controlled more effectively.