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1. 发明专利

JP2007123330A Manufacturing method of semiconductor device 审中-公开
标题翻译：半导体器件的制造方法
公开(公告)号：JP2007123330A
公开(公告)日：2007-05-17
申请号：JP2005309769
申请日：2005-10-25
申请人： Fujitsu Ltd , 富士通株式会社
发明人： O JUNSHI , HAYAMI YUKA , KOUSU MASATOSHI , YAMANO MASAOMI
IPC分类号： H01L21/304 , H01L21/027
CPC分类号： H01L21/31111 , G03F7/423 , H01L21/0206 , H01L21/823807 , H01L21/823814 , H01L21/823864
摘要： PROBLEM TO BE SOLVED: To suppress etching of SPM solution with respect to a nitride film formed on a surface of a semiconductor substrate.
SOLUTION: In a manufacturing method of a semiconductor device, a solution comprising sulphuric acid and hydrogen peroxide solution is heated, solution is supplemented with sulphuric acid of a prescribed amount and hydrogen peroxide solution of the prescribed amount at prescribed intervals, sulphuric acid of solution is maintained to not less than prescribed concentration, the semiconductor substrate is immersed in solution, and the semiconductor substrate is cleaned. Furthermore, a resist film is formed on the semiconductor substrate, a resist pattern is formed on the resist film, and the semiconductor substrate is worked with the resist pattern as a mask. A solution comprising sulphuric acid and hydrogen peroxide solution is heated, solution is supplemented with the sulphuric acid of the prescribed amount and hydrogen peroxide solution of the prescribed amount at the prescribed intervals, and sulphuric acid of the solution is maintained to a level that is not less than prescribed concentration. The semiconductor substrate is immersed in the solution, and the resist pattern is removed.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：抑制对形成在半导体衬底的表面上的氮化物膜的SPM溶液的蚀刻。解决方案：在半导体器件的制造方法中，将含有硫酸和过氧化氢溶液的溶液加热，用规定量的硫酸和规定间隔的过氧化氢溶液补充溶液，加入硫酸的溶液维持在规定浓度以上，将半导体基板浸渍在溶液中，对半导体基板进行清洗。此外，在半导体衬底上形成抗蚀剂膜，在抗蚀剂膜上形成抗蚀剂图案，并将半导体衬底与抗蚀剂图案一起作为掩模加工。加入含有硫酸和过氧化氢溶液的溶液，用规定量的规定量的硫酸和规定量的过氧化氢溶液补充溶液，将溶液的硫酸维持在不为小于规定浓度。将半导体衬底浸入溶液中，除去抗蚀剂图案。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JPS63178531A WASHING TYPE INTERMEDIATE STAGE 失效
公开(公告)号：JPS63178531A
公开(公告)日：1988-07-22
申请号：JP1107287
申请日：1987-01-20
申请人： FUJITSU LTD , KYUSHU FUJITSU ELECTRONIC
发明人： YAMANO MASAOMI , HASHIGUCHI TOSHIFUMI
IPC分类号： B08B3/04 , B08B3/00 , B24B7/20 , H01L21/304 , H01L21/68 , H01L21/683
摘要： PURPOSE:To load a wafer to a rear polisher without damaging the surface of the wafer by using a washing type intermediate stage with a washing introducing hole and a guide at the time of the insertion of the wafer. CONSTITUTION:Water is introduced to the center of an inner tank 4 by a pipe penetrating an outer tank 5, ejected from introducing holes 2 forming an acute angle to the surface of a wafer 1, and overflowed from the edge of the inner tank 4 and discharged from a drain pipe 7 for the outer tank 5. Water is passed gradually from holes 4a in the bottom of the inner tank 4, and a water flow is stabilized. The wafer 1 is guided correctly to the center by the gradients of guides 3, and placed on a water surface. The wafer 1 is turned by ejected water while foreign matters adhering on the surface are washed away. According to the constitution, the surface of the wafer is not damaged when the wafer is polished by a rear polisher.

3. 发明专利

JPS6085871A GRINDING DEVICE 失效
公开(公告)号：JPS6085871A
公开(公告)日：1985-05-15
申请号：JP19457383
申请日：1983-10-17
申请人： FUJITSU LTD
发明人： KUTSUNO FUMIO , YAMANO MASAOMI
IPC分类号： B24D7/00 , B24D7/18
摘要： PURPOSE:To reduce the resistance of cutting to prevent a workpiece from splitting and cracking, by forming a plurality of cutting edges in the grinding surface of a rotary grindstone so that the workpiece is cut in several steps. CONSTITUTION:Cutting edges 12, for example, three in number, are formed in the cutting surface of a cup-shape rotary grindstone 11. With the use of these cutting edges 12, a semiconductor substrate 13 as a workpiece is cut in three steps by a predetermined thickness. With this arrangement the resistance of cutting which is concentrated into the substrate 13 may be dispersed to reduce the cutting resistance exerted to the substrate 13 so that it is possible to prevent the substrate 13 from splitting and cracking.

4. 发明专利

JPS60219750A POLISHING METHOD FOR BACK SURFACE OF SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPS60219750A
公开(公告)日：1985-11-02
申请号：JP7687784
申请日：1984-04-17
申请人： FUJITSU LTD
发明人： NAKAMURA MASAKI , FUJIE NOBUO , TABUCHI SHIYUUJI , YAMANO MASAOMI
IPC分类号： B24B7/20 , H01L21/302 , H01L21/304
摘要： PURPOSE:To shorten the procedure by removing processes with dangers such as the use of organic flux by a method wherein the main surface of a semiconductor substrate finished in wafer processing is covered with a water-soluble resin film, and the back surface of the substrate is flatly ground. CONSTITUTION:The main surface of the semiconductor substrate is coated with a protection film made of a water-soluble resin (polymer substance). 1.0-2.0 [mum] is suitable for the coating thickness. Next, the main surface side of the substrate is fixed from above with a vacuum chuck or the like. Using an organic flux such as freon (carbon tetrafluoride) which does not dissolve the water-soluble resin of the protection film of polyvinyl alcohol, etc. for the cooling liquid, the back surface of the substrate is flatly ground with a grinding plate similar to the conventional one rotating at high speed.

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