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    • 6. 发明专利
    • SEMICONDUCTOR INTEGRATED CIRCUIT
    • JPH01112749A
    • 1989-05-01
    • JP26930387
    • 1987-10-27
    • FUJITSU LTD
    • MIURA DAISUKE
    • H01L21/82H01L21/3205H01L23/52H01L27/118
    • PURPOSE:To prevent any crosstalk from being produced between first layer wirings and third layer wirings by forming the third layer wirings having a pitch specified obliquely with respect to the first layer wirings and second layer wirings, both latter wirings being formed longitudinally and transversely at predetermined pitches, said third layer wirings being further defined to pass over intersections between said first and second wirings. CONSTITUTION:For first and second layer wirings 11 and 21, the first ones 11 are arranged longitudinally with a pitch of (a), and the second ones 21 are arranged transversely with a pitch of (b). In addition, third layer wirings 31 are arranged so that they pass over intersections between the first and second layer wirings and extend obliquely. With such arrangement of the third layer wirings 31, their pitch is given as being 2ab/(a +b ) . Further, via holes 51, 52 are provided for connecting the third layer wirings 31, and the first and second layer wirings 11, 21. There is no parallel part between the first and third layer wirings 11 and 31, thus preventing any crosstalk from being produced.
    • 9. 发明专利
    • SEMICONDUCTOR LOGIC CELL LIBRARY FORMING EQUIPMENT
    • JPH05129435A
    • 1993-05-25
    • JP28644791
    • 1991-10-31
    • FUJITSU LTD
    • MIURA DAISUKE
    • H01L21/82G06F17/50
    • PURPOSE:To update and form a cell library in a short time, eliminate the delay of logic design, and develop a new product, by sequentially operating and obtaining logic cell library information only by obtaining basic data of elements necessary for forming a circuit, and storing results in a library. CONSTITUTION:From a device simulator 1, three-dimensional part structure of an element for forming an LSI is inputted, and capacitance values per unit area of metal wiring and polysilicon wiring are obtained. As the parameter of a layout verification tool 2, values like actual capacitance extracted from a mask pattern 7 and actual length of transistor size are determined, the capacitance value of an input terminal and the transistor size of an output terminal are obtained, and these values are written in a storage device 3. A circuit simulator 4 performs operation by using the output of the storage device 3 and the output of test specification 8. A computer 5 calculates the delay time between an input and an output, on the basis of the output of the circuit simulator 4, devices the delay time into basic delay time and load capacity dependent coefficient, and writes them in a logic cell library.