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1. 发明专利

JP2001096455A POLISHING DEVICE 失效
公开(公告)号：JP2001096455A
公开(公告)日：2001-04-10
申请号：JP27425999
申请日：1999-09-28
申请人： EBARA CORP , TOSHIBA CORP
发明人： ONO KOJI , OGURI SHOZO , SASABE KENICHI , KURITA MASATO , KOJIMA YASUHISA , KEIGAWA TADANORI , SHIGETA KENICHI
IPC分类号： B24B37/00 , B24B37/04 , B24B37/30 , B24B49/10 , B24B49/16 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a polishing device capable of restraining a polished substrate from being damaged because of being broken and/or jumping out by continuously controlling the polished substrate in its polishing process. SOLUTION: The device has a substrate holding fixture 4 capable of holding both a polishing tool 1 and a polished substrate W for pressing the polished surface of the polished substrate W against the polishing tool 1, and polishes the polished substrate W by relatively moving both the polishing tool 1 and the substrate holding fixture 4. The device is furnished with a sensor 10 set at the outer side of the substrate holding fixture 4 for measuring a distance to the surface of the polishing tool 1, and with a control means detecting any change in the measured distance up to the surface of the polishing tool 1 when the polished substrate W stands over the surface of the polishing tool 1 as abnormal polishing (including jumping out of the polished substrate W).

2. 发明专利

JPS63162861A THIN FILM DEPOSITION DEVICE 失效
公开(公告)号：JPS63162861A
公开(公告)日：1988-07-06
申请号：JP30795286
申请日：1986-12-25
申请人： TOSHIBA CORP
发明人： KURITA MASATO
IPC分类号： C23C14/34 , C23C14/56
摘要： PURPOSE:To prevent exfoliation of a thin film stuck to a sample surface and to prevent generation of defects in the thin film, by forming the exposed surface in a device for sputtering a target which is one of electrodes and depositing the thin film on the substrate surface to a rough surface having adequate surface roughness. CONSTITUTION:The electrodes 22, 23 are disposed to confront each other in a vacuum vessel 21. The metallic target 24 is mounted onto one electrode 22 and a wafer 25 is imposed on a sample base of the other electrode 23. Gaseous Ar is introduced into the vessel 21 and the inside of the vessel is evacuated to about 0.3Torr pressure. About 500V voltage is impressed between the electrodes 22 and 23 by a power supply 26. Plasma is thereby formed and the Ar ions therein sputter the above-mentioned target 24, thus depositing the thin film on the surface of the wafer 25. A deposition preventive plate 27 made of Al is fixed onto the exposed surface of the above-mentioned vessel 21 and the surfaces thereof is formed to >=12.58 surface roughness. The exfoliation of the thin film stuck to the plate 27 surface is thereby obviated and the contamination in the vessel 21 is prevented.

3. 发明专利

JP2013119147A Polishing device 审中-公开
标题翻译：抛光装置
公开(公告)号：JP2013119147A
公开(公告)日：2013-06-17
申请号：JP2011269094
申请日：2011-12-08
申请人： Toshiba Corp , 株式会社東芝
发明人： KURITA MASATO
IPC分类号： B24B37/32 , B24B37/34 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a polishing device capable of inhibiting the adhesion of an abrasive to a side surface of a polishing object.SOLUTION: A polishing head 12 is rotationally driven and holds a semiconductor wafer 18 by pressing it against a polishing cloth 14. A retainer ring 17 is shaped like a cylinder to surround the semiconductor wafer 18 and disposed at the underside of the polishing head 12. A plurality of gas ejection holes 23 are disposed on an inner side surface of the retainer ring 17 and eject air or inert gases to a side surface of the semiconductor wafer 18 held by the polishing head 12. A gas supply part 19 is connected to the plurality of gas ejection holes 23 and supplies the air or the inert gases to the plurality of gas ejection holes 23.
摘要翻译：要解决的问题：提供能够抑制磨料对研磨对象的侧面的粘附的研磨装置。解决方案：抛光头12旋转驱动，并通过将其按压在抛光布14上而保持半导体晶片18.保持环17成形为圆柱体，以围绕半导体晶片18并设置在抛光的下侧多个气体喷射孔23设置在保持环17的内侧表面上，并将空气或惰性气体喷射到由抛光头12保持的半导体晶片18的侧表面。气体供应部分19是连接到多个气体喷射孔23并将空气或惰性气体供应到多个气体喷射孔23.版权所有（C）2013，JPO和INPIT

4. 发明专利

JPH0722373A CHEMICAL TREATMENT EQUIPMENT 失效
公开(公告)号：JPH0722373A
公开(公告)日：1995-01-24
申请号：JP15164793
申请日：1993-06-23
申请人： TOSHIBA CORP
发明人： KURITA MASATO , SAKURAI MASAOMI
IPC分类号： H01L21/304 , H01L21/306
摘要： PURPOSE:To clean the surface of a specimen by a method wherein the specimen is subjected to a chemical treatment, rinsed, and centrifugally dried out, and then treated in a chamber controlled in both temperature and humidity or a vacuum chamber. CONSTITUTION:Substrates 19 placed on a loader 17 are treated with chemicals in treatment tanks 11 and 12 filled with mixed liquid of sulfuric acid and hydrogen peroxide. Then, the substrates 19 are rinsed in rinsing tanks 13 and 14. Moisture attached to the surfaces of the substrates 19 is removed by a substrate centrifugal rotary machine 15. Thereafter, the substrates 19 are thermally treated in a chamber controlled in temperature and humidity so as to accelerating the production of sulfide. Thereafter, the substrates 19 are rinsed in the rinsing tanks 13 and 14, moisture attached to the surfaces of the substrates 19 is removed by the substrate centrifugal rotary machine 15, and the substrates 19 are recovered by an unloader 18. Or, after a chemical treatment, a rinsing treatment, and a centrifugal drying treatment are carried out, moisture attached to the substrates 19 is removed in a vacuum chamber 16b by vacuum suction. By this setup, sulfide can be restrained from being produced later.

5. 发明专利

JPH01313939A CENTRIFUGAL SPIN DRYER FOR SUBSTRATE 失效
公开(公告)号：JPH01313939A
公开(公告)日：1989-12-19
申请号：JP14488888
申请日：1988-06-14
申请人： TOSHIBA CORP
发明人： KURITA MASATO
IPC分类号： F26B5/08 , H01L21/304
摘要： PURPOSE:To prevent the pollution by dust from occurring by a method wherein an exclusive vessel is fixed to a dryer to acquire balance thereof so that the weight of the dryer may be controlled by changing the quantity of a liquid or a solid contained in the vessel. CONSTITUTION:A carrier 17 on which a plurality of substrates are rested in almost a parallel state with one another is mounted on a holding base 15 while a vessel 21 provided with a liquid feeder valve 19 and a liquid drain valve 20 capable of freely controlling the weight is fixed to another holding base 18 opposite to the holding base 15 to acquire balance of the title dryer. The water content can be removed by the centrifugal force energized by spinning the dryer in such a state. Through these procedures, any dust can be prevented from being raised for a long time; thereby, the reverse-pollution can be avoided.

6. 发明专利

JPH01235840A SURFACE ANALYZER 失效
公开(公告)号：JPH01235840A
公开(公告)日：1989-09-20
申请号：JP6186688
申请日：1988-03-17
申请人： TOSHIBA CORP
发明人： KURITA MASATO
IPC分类号： G01N23/223 , H01J37/18 , H01L21/205
摘要： PURPOSE:To obtain a stable analysis value having high reliability by providing a function to control the pressure in a vacuum vessel to a specified value. CONSTITUTION:The box type vacuum vessel 12 forming a vacuum chamber 11 is bisected to the sample chamber 12a and an irradiation chamber 12b. A sample 15 to be measured is so disposed in the position of the aperture of a supporting part 13 that the surface thereof is exposed in an X-ray generating part 16. A spectroscopic part 17 is disposed near the sample 15 and a detecting part 18 is provided to the position where the spectroscopic output spectrally split in the spectroscopic part 17 is received. Further, the sample 15 is disposed to the supporting part 13 and an evacuation pump 20 is operated to maintain the inside of the vacuum chamber 11 preferably under 1X10 Torr by control of a valve 21. The sample 15 emits a fluorescent X-ray when the X-ray is radiated from the generating part 16 and is projected to the sample 15. The output of the spectroscopic part is detected by the detecting part 18 and the output thereof is displayed in a counter part 22. The stably analysis value having the high reliability is thus obtd.

7. 发明专利

JPS6260864A TARGET FOR SPUTTERING 失效
公开(公告)号：JPS6260864A
公开(公告)日：1987-03-17
申请号：JP19949185
申请日：1985-09-11
申请人： TOSHIBA CORP
发明人： KURITA MASATO
IPC分类号： C23C14/34 , H01L21/285
摘要： PURPOSE:To form a film having a stable ratio in composition by sputtering by changing the ratio between the constituents of a composite target for sputtering in the direction of depth. CONSTITUTION:When sputtering is carried out many times with a composite target consisting of a beam 3 of a high m.p. metal and a silicon beam 2, formed films are made gradually rich in silicon. In order to prevent the formation of silicon-rich films, the ratio between the constituents of the composite target, that is, the beams 3, 2, are changed in the direction of depth.

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