专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2005088123A Manufacturing method of semiconductor device 审中-公开
标题翻译：半导体器件的制造方法
公开(公告)号：JP2005088123A
公开(公告)日：2005-04-07
申请号：JP2003324586
申请日：2003-09-17
申请人： Denso Corp , 株式会社デンソー
发明人： OOHARA ATSUSHI , ASAUMI KAZUSHI , MUTO KOJI , FUKADA TAKESHI , TAKEUCHI YUKIHIRO
IPC分类号： B81C1/00 , B81B3/00 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device in which a trench is formed in a semiconductor layer of the surface layer side of a semiconductor substrate having an insulating layer inside by trench etching, and release etching for separating the bottom of the semiconductor layer from the insulating layer is performed to form a movable structure, making uniform a gap between the bottom of the movable structure and the insulating layer throughout the movable structure even if the trench partitioning the movable structure is different in width. SOLUTION: In a trench forming process, the etching condition is that even if etching is continued after the base of the trench 14 reaches the insulating layer 13, the side wall surface of the trench 14 positioned near the bottom of the trench 14 ie not etched. In a release process, the etching condition is that a notch 110 is formed in the side wall of the trench 14 positioned near the bottom of the trench 14 to proceed with etching. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种半导体器件的制造方法，其中通过沟槽蚀刻在其内部具有绝缘层的半导体衬底的表面层侧的半导体层中形成沟槽，以及用于分离的剥离蚀刻执行半导体层从绝缘层的底部以形成可移动结构，即使分隔可移动结构的沟槽的宽度不同，在可移动结构的底部和整个可移动结构中的绝缘层之间形成均匀的间隙。解决方案：在沟槽形成工艺中，蚀刻条件是即使在沟槽14的基底到达绝缘层13之后继续蚀刻，沟槽14的侧壁表面位于沟槽14的底部附近即不刻蚀。在释放过程中，蚀刻条件是在位于沟槽14的底部附近的沟槽14的侧壁中形成凹口110以进行蚀刻。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2005086079A Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2005086079A
公开(公告)日：2005-03-31
申请号：JP2003318267
申请日：2003-09-10
申请人： Denso Corp , 株式会社デンソー
发明人： ASAUMI KAZUSHI , OOHARA ATSUSHI , MUTO KOJI , SUGIURA KAZUHIKO
IPC分类号： G01P15/125 , H01L21/3065 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which uses a semiconductor substrate having an insulating layer in its inside and having a semiconductor layer on the surface side of the insulating layer and in which a movable structure is formed by releasing a semiconductor layer from the insulating layer by forming a trench in the semiconductor layer, wherein the method of manufacturing the semiconductor device reduces the etching time of the releasing process and suppresses the occurrence of needle-shaped protrusions on the released surface of the semiconductor layer. SOLUTION: Reactive ion etching is included in the process of forming a sidewall protection film 18 on the sidewall of the trench 14, simultaneously with the etching or within the times switched from that of the etching. The etching condition is switched from that of the trench-forming process to that of the releasing process, in such a way that the sidewall protection effect in the releasing process by the sidewall protection film 18 is relatively weak, as compared to the sidewall protection effect in the trench-forming process by the sidewall protection film 18. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种制造半导体器件的方法，该半导体器件使用其内部具有绝缘层并在绝缘层的表面侧上具有半导体层并且形成有可移动结构的半导体衬底通过在半导体层中形成沟槽而从绝缘层释放半导体层，其中制造半导体器件的方法减少了释放过程的蚀刻时间，并且抑制半导体释放表面上的针状突起的发生层。解决方案：反应离子蚀刻包括在沟槽14的侧壁上形成侧壁保护膜18的过程中，与蚀刻同时或在与蚀刻切换的时间内形成。蚀刻条件从沟槽形成处理切换到释放过程的蚀刻条件，使得与侧壁保护效果相比，由侧壁保护膜18释放过程中的侧壁保护效果相对较弱在侧壁保护膜18的沟槽形成过程中。（C）2005年，JPO和NCIPI

3. 发明专利

JP2009103529A Laser beam irradiating device 有权
标题翻译：激光束辐射器件
公开(公告)号：JP2009103529A
公开(公告)日：2009-05-14
申请号：JP2007274296
申请日：2007-10-22
申请人： Denso Corp , 株式会社デンソー
发明人： TARUMI HIROYUKI , OOHARA ATSUSHI , MORISHITA TOSHIYUKI
IPC分类号： G01S7/48 , H01S5/022
摘要： PROBLEM TO BE SOLVED: To provide a laser beam irradiating device, having small size, high resolution, and high flexibility of laser beam scanning design, and using a semiconductor laser which is usable for distance measurements, or the like. SOLUTION: This laser beam irradiating device 100 has a semiconductor laser array 11, having a plurality of light-emitting points L1-L5 arranged side by side in one direction; a lens 25, arranged in the crossing state with a beam emission surface (XY-surface) constituted in the array direction (X-direction) of the plurality of light-emitting points L1-L5 and in the emission direction (Y-direction) of the laser beam, on the front in the emission direction of the laser beam emitted from each light-emitting point L1-L5 of the semiconductor laser array 11; and a prism array 40, wherein prisms P1-P5 corresponding to each light-emitting point L1-L5 are arranged side by side in one direction, in the crossing state with the beam emission surface (XY-surface) between the semiconductor laser array 11 and the lens 25. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供具有小尺寸，高分辨率和高灵活性的激光束扫描设计的激光束照射装置，以及使用可用于距离测量的半导体激光器等。解决方案：该激光束照射装置100具有半导体激光器阵列11，其具有在一个方向上并排布置的多个发光点L1-L5; 以与多个发光点L1-L5的排列方向（X方向）构成的射出面（XY面）和发光方向（Y方向）交叉的状态配置的透镜25，在从半导体激光器阵列11的每个发光点L1-L5发射的激光束的发射方向的正面上的激光束; 和棱镜阵列40，其中对应于每个发光点L1-L5的棱镜P1-P5在与半导体激光器阵列11之间的光束发射表面（XY表面）的交叉状态下在一个方向上并排布置和镜头25.版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2005345630A Optical waveguide and the manufacturing method 有权
标题翻译：光波导和制造方法
公开(公告)号：JP2005345630A
公开(公告)日：2005-12-15
申请号：JP2004163628
申请日：2004-06-01
申请人： Denso Corp , 株式会社デンソー
发明人： OOHARA ATSUSHI , YOSHIHARA SHINJI , TAKEUCHI YUKIHIRO
IPC分类号： G02B6/122 , G02B6/13 , G02B6/136 , G02B6/26 , G02B6/42 , G02B27/00 , H01L21/311
CPC分类号： G02B6/136 , G02B6/122 , G02B6/4207
摘要： PROBLEM TO BE SOLVED: To provide an optical waveguide that can reduce connection loss through a novel structure, and to provide its manufacturing method. SOLUTION: On a silicon substrate 1, there are erected a plurality of silicon oxide posts 4, having a belt-like planar shape, in a state with the upper parts in the vertical direction being in contact with each other while the parts below are formed with gaps 5 which are wider in width toward the lower end. If the width of the silicon oxide posts 4 is set to "W1" and that of the gaps between the posts 4 is set to "W2", "W1/W2" is smaller the farther downward it is. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供可以通过新颖结构减少连接损耗的光波导，并提供其制造方法。解决方案：在硅衬底1上，竖立有多个具有带状平面形状的氧化硅柱4，其中上部部分在垂直方向上彼此接触，而部分下方形成有向下端宽度较宽的间隙5。如果氧化硅柱4的宽度被设定为“W1”，将柱4之间的间隙的宽度设定为“W2”，则“W1 / W2”越向下越小。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2005136385A Semiconductor optical device and manufacturing method of the same 有权
标题翻译：半导体光学器件及其制造方法
公开(公告)号：JP2005136385A
公开(公告)日：2005-05-26
申请号：JP2004268106
申请日：2004-09-15
申请人： Denso Corp , 株式会社デンソー
发明人： YOSHIHARA SHINJI , OOHARA ATSUSHI
IPC分类号： G02B6/42 , G02B3/00 , G02B7/00 , H01L33/58 , H01S5/022 , H01L33/00
CPC分类号： H01L2224/48095 , H01L2224/73265
摘要： PROBLEM TO BE SOLVED: To improve alignment accuracy of optical parts than in the prior art. SOLUTION: A micro lens pedestal section 1b is formed by processing the objective formation area of a micro lens 1a of a micro lens substrate 1 into the shape of the micro lens 1a by performing etching on the micro lens substrate 1 once. Then, a positioning structure section 1c is simultaneously formed on the micro lens substrate 1. And the micro lens 1a is formed on the micro lens pedestal section 1b. Subsequently, a part of the side that is to be the emitting light surface 2a of a laser diode substrate 2 is contacted with the reference surface 23 of the positioning structure section 1c to mount the laser diode substrate 2 on the micro lens substrate 1, thereby enabling to more improve the positioning accuracy of the micro lens 1a with the laser diode substrate 2 than that in the prior art and to more improve the efficiency of the optical coupling of the micro lens 1a with the laser diode substrate 2 than that in the prior art. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提高光学部件的对准精度，而不是现有技术。解决方案：通过在微透镜基板1上进行一次蚀刻，将微透镜基板1的微透镜1a的物镜形成区域处理为微透镜1a的形状，形成微透镜基座部分1b。然后，在微透镜基板1上同时形成定位结构部1c。微透镜1a形成在微透镜基座部1b上。随后，将激光二极管基板2的发光面2a侧的一部分与定位结构部1c的基准面23接触，将激光二极管基板2安装在微透镜基板1上，由此与现有技术相比，能够更加提高激光二极管基板2的微透镜1a的定位精度，并且能够更有效地提高微透镜1a与激光二极管基板2的光耦合效率。艺术。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2008111865A Method of manufacturing optical element, and optical element 有权
标题翻译：制造光学元件和光学元件的方法
公开(公告)号：JP2008111865A
公开(公告)日：2008-05-15
申请号：JP2006293032
申请日：2006-10-27
申请人： Denso Corp , 株式会社デンソー
发明人： OOHARA ATSUSHI , TAKEUCHI YUKIHIRO
IPC分类号： G02B3/00
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing an optical element having excellent light transmission, and also to provide the optical element thereof. SOLUTION: The method of manufacturing the optical element includes: a first process of forming a plurality of column structures so as to be juxtaposed by trench-etching a silicon substrate using a patterned mask via a first trench; a second process of replacing the whole column structure by a silicon oxide by thermal oxidation; and a third process of pressuring the plurality of the juxtaposed column structures after the second process under a condition that the silicon oxide is fused. At a time point when the second process is finished, the first trench and the column structure are formed in the first process so that a gap derived from the first trench remains between the adjacent column structures. In the third process, the adjacent column structures are brought into contact with each other by performing pressuring in a juxtaposition direction, and the plurality of the column structures are integrated by fusion to make a silicon oxide block (micro lens) transmitting light. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造具有优异的光透射率的光学元件的方法，并且还提供其光学元件。解决方案：制造光学元件的方法包括：通过经由第一沟槽使用图案化掩模通过沟槽蚀刻硅衬底而并列形成多个列结构的第一工艺; 通过热氧化由氧化硅代替整个柱结构的第二过程; 以及在氧化硅熔融的条件下，在第二工序之后对多个并置的列结构进行加压的第三工序。在第二工序结束的时间点，在第一工序中形成第一沟槽和列结构，使得从第一沟槽得到的间隙保留在相邻的列结构之间。在第三工序中，相邻的列结构通过以并列方向进行加压而相互接触，并且通过熔融将多个列结构集成在一起，形成透过光的氧化硅块（微透镜）。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2007080932A Method of manufacturing laser apparatus 有权
标题翻译：制造激光装置的方法
公开(公告)号：JP2007080932A
公开(公告)日：2007-03-29
申请号：JP2005263636
申请日：2005-09-12
申请人： Denso Corp , 株式会社デンソー
发明人： OTAKE NOBUYUKI , OOHARA ATSUSHI
IPC分类号： H01S3/07 , H01S3/094 , H01S3/109
摘要： PROBLEM TO BE SOLVED: To highly precisely and effectively form a reflecting mirror and lenses. SOLUTION: A structure as a base to form excitation light source lenses 2, 3, DBRs 4, 6, and an exit light source lens 7, and a trench are alternately formed by etching a silicon substrate 9 from a substrate surface. Each structure subjected to thermal oxidation and made of silicon is substituted for silicon oxide, thereby forming respective optical elements on the substrate surface in a lump. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：高精度有效地形成反射镜和透镜。解决方案：通过从衬底表面蚀刻硅衬底9，交替形成作为形成激发光源透镜2,3，DBR4,6和出射光源透镜7的基底的结构和沟槽。经过热氧化并由硅制成的每个结构代替氧化硅，从而在基板表面上一次形成各个光学元件。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2003273369A Manufacturing method of semiconductor device 审中-公开
标题翻译：半导体器件的制造方法
公开(公告)号：JP2003273369A
公开(公告)日：2003-09-26
申请号：JP2002073960
申请日：2002-03-18
申请人： Denso Corp , 株式会社デンソー
发明人： OOHARA ATSUSHI , MUTO KOJI , KANO KAZUHIKO
IPC分类号： B81B3/00 , B81C1/00 , G01P15/08 , G01P15/125 , H01L21/3065 , H01L29/84
CPC分类号： B81C1/0019 , B81C1/00579 , B81C1/00626 , B81C2201/0132 , G01P15/0802 , G01P15/125 , G01P2015/0814
摘要： PROBLEM TO BE SOLVED: To prevent a movable portion from sticking on a portion around itself, in a manufacturing method of a semiconductor device provided with a laminate consisting of a first semiconductor layer and a second semiconductor layer laminated thereon through an insulating layer, and a movable section formed on the second semiconductor layer and being displaceable in response to application of dynamic quantity.
SOLUTION: In this method of manufacturing a semiconductor device, since an etching speed in a trench forming process is higher than that in a movable section forming process, the amount of a protective film formed on the rear surface of the movable portion 20 as a mask can be reduced in a protective film forming process. In this way, in an etching process, even if the etching ions repelled on the surface of a charged oxide film 13 collide with the rear surface of the portion 20, needle-like projections can be prevented from being formed on the rear surface of the portion 20, and the sticking between the section 20 and the film 13 can be suppressed.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：为了防止可动部分粘附在其周围的部分上，在通过绝缘层设置有由第一半导体层和第二半导体层层叠的层叠体的半导体器件的制造方法中以及形成在第二半导体层上并且响应于动态量的应用而可移位的可移动部分。解决方案：在这种制造半导体器件的方法中，由于沟槽形成工艺中的蚀刻速度高于可移动部分形成工艺中的蚀刻速度，所以形成在可移动部分20的后表面上的保护膜的量作为掩模可以在保护膜形成过程中减少。以这种方式，在蚀刻工艺中，即使在带电氧化膜13的表面上排斥的蚀刻离子与部分20的后表面碰撞，也可以防止在其后表面上形成针状突起部分20，并且可以抑制部分20和膜13之间的粘附。版权所有（C）2003，JPO

9. 发明专利

JP2009092776A Optical element and method of manufacturing the same 有权
标题翻译：光学元件及其制造方法
公开(公告)号：JP2009092776A
公开(公告)日：2009-04-30
申请号：JP2007261304
申请日：2007-10-04
申请人： Denso Corp , 株式会社デンソー
发明人： OOHARA ATSUSHI , KANO KAZUHIKO
IPC分类号： G02B1/02 , G02B6/122 , G02B6/13
摘要： PROBLEM TO BE SOLVED: To provide an optical element in which the deterioration of optical characteristic due to buckling is suppressed and a method of manufacturing the optical element. SOLUTION: The optical element is provided with: a silicon substrate; and at least one columnar structure body which is made of a silicon oxide, erected on the upper face of the silicon substrate and integrally formed with the silicon substrate, wherein light is transmitted through the columnar structure body, and the shape of the columnar structure body is a continuous curved form which is convex to at least one side with respect to a virtual straight line connecting both ends in the longitudinal direction of the columnar structure body. COPYRIGHT: (C)2009,JPO&INPIT

10. 发明专利

JP2007102196A Method for manufacturing optical element 有权
标题翻译：制造光学元件的方法
公开(公告)号：JP2007102196A
公开(公告)日：2007-04-19
申请号：JP2006226526
申请日：2006-08-23
申请人： Denso Corp , 株式会社デンソー
发明人： TAKEUCHI YUKIHIRO , OOHARA ATSUSHI
IPC分类号： G02B3/00
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method for an optical element without leaving a clearance in trenches.
SOLUTION: The plurality of trenches are formed on the basis of the recess 2 of a silicon substrate 1 by D-RIE, and a columnar structural body is formed between the trenches. Each columnar structure body is replaced with a silicon oxide 14 by thermal oxidation. Carbon dioxide of the super critical state dissolving silicon oxide therein is flowed into each trench between the silicon oxide layers 14. Thus, each trench is buried by the silicon oxide layer 15 without any clearance. Accordingly, it is possible to manufacture a micro lens 3 having no fear that a diffraction phenomenon is generated and efficiency is reduced.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种光学元件的制造方法，而不会在沟槽中留下间隙。解决方案：通过D-RIE在硅衬底1的凹部2的基础上形成多个沟槽，并且在沟槽之间形成柱状结构体。每个柱状结构体通过热氧化被氧化硅14代替。将氧化硅溶解在其中的超临界状态的二氧化碳流入氧化硅层14之间的每个沟槽。因此，每个沟槽被氧化硅层15掩埋而没有任何间隙。因此，可以制造不会产生衍射现象并降低效率的微透镜3。版权所有（C）2007，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式