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    • 3. 发明专利
    • Process-liquid-supplying apparatus, substrate processing apparatus, process-liquid-supplying method, and substrate processing method
    • 过程液体供应装置,基板处理装置,方法 - 液体供应方法和基板处理方法
    • JP2014082471A
    • 2014-05-08
    • JP2013194293
    • 2013-09-19
    • Dainippon Screen Mfg Co Ltd大日本スクリーン製造株式会社Techno Ryowa Ltd株式会社テクノ菱和
    • MIYAGI MASAHIROARAKI HIROYUKISUZUKI MASANORISATO TOMOKATSUKAWASE NOBUO
    • H01L21/304B05C11/08B05C11/10B08B3/02G21K5/00G21K5/02G21K5/10H05F1/00H05F3/06
    • PROBLEM TO BE SOLVED: To provide a process-liquid-supplying apparatus and a process-liquid-supplying method by which a process liquid can be supplied to a processing object while preventing the electrification of or diselectrifying the processing object, and to provide a substrate processing apparatus and a substrate processing method by which a treatment by use of a process liquid can be performed on a substrate while preventing the electrification of or diselectrifying the substrate.SOLUTION: A substrate processing apparatus 1 comprises: a spin chuck 4 for rotating a substrate W while holding it in a horizontal attitude; and an integral-type head 6 disposed to face a surface(upper face) of the substrate W held by the spin chuck 4 for supplying the surface of the substrate W with DIW(deionized water) as an example of water and irradiating the surface of the substrate W with soft X rays. The integral-type head 6 has a water nozzle 61 extending in a vertical direction, and a soft X-ray irradiation unit 62 for laterally directing soft X rays toward the water nozzle 61, which are assembled integrally. The water nozzle 61 is connected with a water-supplying line 13 to which DIW is supplied from a DIW supply source.
    • 要解决的问题:提供一种处理液供给装置和处理液供给方法,通过该方法,可以在防止加工对象的带电或不均化的同时将处理液体供给到处理对象物,并且提供基板 处理装置和基板处理方法,通过该方法可以在基板上进行使用处理液的处理,同时防止基板的通电或使其失电。解决方案:基板处理装置1包括:用于旋转基板的旋转卡盘4 同时把握在一个横向的态度; 以及设置成面对由旋转卡盘4保持的基板W的表面(上表面)的一体型头6,用于以DIW(去离子水)作为水的一个表面供给衬底W的表面,并照射 具有软X射线的衬底W。 整体式头部6具有沿垂直方向延伸的水喷嘴61和用于将软X射线横向引导到水喷嘴61的软X射线照射单元62,它们被整体组装。 水喷嘴61与DIW供给源供给DIW的供水管13连接。
    • 4. 发明专利
    • Substrate processing apparatus
    • 基板加工设备
    • JP2014150136A
    • 2014-08-21
    • JP2013017327
    • 2013-01-31
    • Dainippon Screen Mfg Co Ltd大日本スクリーン製造株式会社
    • MIYAGI MASAHIROTAKAHASHI MITSUKAZU
    • H01L21/304H01L21/306
    • PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which can improve location accuracy of a processing position of each of a plurality of processing members on a peripheral part of a substrate principal surface thereby to process a whole area of the principal surface of the substrate with high efficiency without the occurrence of treatment non-uniformity.SOLUTION: In a substrate processing device, fitting positions of first and second chemical nozzles 5, 6 to a swing arm 13, a position of a rotation axis C and a location of a swing axis A are adjusted such that first and second droplet landing positions form a positional relationship which satisfies the following formula (1): L1×L2=r(1) (in formula (1), L1 denotes a distance between the first and second droplet landing positions in relation to a direction along the swing arm 13; L2 denotes a distance between the rotation axis C and the swing axis A; r denotes a radius of a circular region where the droplet landing positions can be scanned by rotation of a spin chuck 3 and swing of the swing arm 13).
    • 要解决的问题:提供一种基板处理装置,其可以提高基板主表面的周边部分上的多个处理部件中的每一个的处理位置的位置精度,从而处理基板的主表面的整个区域 高效率,不发生处理不均匀。解决方案:在基板处理装置中,第一和第二化学喷嘴5,6的安装位置到摆臂13,旋转轴线C的位置和摆动位置 轴线A被调整为使得第一和第二液滴着陆位置形成满足下式(1)的位置关系:L1×L2 = r(1)(在式(1)中,L1表示第一和第二液滴之间的距离 相对于沿着摇臂13的方向的着陆位置; L2表示旋转轴线C和摆动轴线A之间的距离; r表示液滴着陆位置的圆形区域的半径 可以通过旋转卡盘3的旋转和摆臂13的摆动来扫描离子。
    • 5. 发明专利
    • Substrate processing apparatus and substrate processing method
    • 基板处理装置和基板处理方法
    • JP2008183532A
    • 2008-08-14
    • JP2007020964
    • 2007-01-31
    • Dainippon Screen Mfg Co Ltd大日本スクリーン製造株式会社
    • MIYAGI MASAHIROSATO MASANOBU
    • B05D1/26B05C9/10B08B3/08B08B3/10H01L21/027H01L21/304H01L21/306
    • B08B3/10H01L21/67051H01L21/6708
    • PROBLEM TO BE SOLVED: To suppress damage on a substrate caused by a discharge between a processing liquid and the substrate upon supplying the processing liquid to the substrate. SOLUTION: The substrate processing apparatus 1 is equipped with a discharge part 32 for discharging the conductive processing liquid toward the substrate 9 in a continuously flowing state. In the vicinity of a discharge port 321 of the discharge part 32, a conductive liquid contact part 322 is provided, and the liquid contact part 322 is connected to an electric potential application part 41. The substrate 9 to be processed is induction charged by charging of a cup part 23 surrounding the periphery of the substrate 9. When processing the substrate 9 with the supply of the processing liquid to the substrate 9, the electric potential is applied to the processing liquid through the liquid contact part 322 upon starting the discharge of the processing liquid, thereby reducing the difference in the electrical potential between the processing liquid discharged on the substrate 9 and the substrate 9. This can suppress the damage on the substrate 9 caused by the discharge between the processing liquid and the substrate 9. COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:为了抑制在将处理液体供给到基板时由处理液和基板之间的排出引起的对基板的损坏。 解决方案:基板处理装置1配备有用于以连续流动状态朝向基板9排出导电处理液的排出部32。 在排出部32的排出口321附近,设置有导电性液体接触部322,液体接触部322与电位施加部41连接。被处理基板9通过充电进行感应充电 围绕基板9的周边的杯部23。当通过向基板9供给处理液来处理基板9时,在开始放电时通过液体接触部322将电位施加到处理液体 处理液体,从而减少在基板9上排出的处理液体和基板9之间的电位差。这可以抑制由处理液体和基板9之间的排出引起的基板9的损坏。

      版权所有(C)2008,JPO&INPIT

    • 6. 发明专利
    • Substrate-treating apparatus and substrate treatment method
    • 基板处理装置和基板处理方法
    • JP2007317821A
    • 2007-12-06
    • JP2006144885
    • 2006-05-25
    • Dainippon Screen Mfg Co Ltd大日本スクリーン製造株式会社
    • MIYAGI MASAHIRO
    • H01L21/304
    • PROBLEM TO BE SOLVED: To suppress electrostatic charge of a substrate during treatment in a substrate-treating apparatus and a substrate treatment method for supplying a treatment liquid to the substrate for treatment. SOLUTION: A cleaning liquid and nitrogen gas are introduced to a discharge section 3, and a drop of cleaning liquid is discharged toward the substrate 9. A cleaning liquid pipe of the discharge section 3 and a cleaning liquid supply section 4 for guiding the cleaning liquid to the discharge section 3 are formed with glass-like carbon, and the cleaning liquid supply section 4 is grounded via a conductive wire 82. A toroidal induction electrode 6 is arranged near a discharge port 31 at the discharge section 3 and is connected to a power supply 81. A potential difference is given between the cleaning liquid pipe 32 and the cleaning liquid supply section 4 that are liquid-contacting sections, and the induction electrode 6, thus inducing charge having reverse polarity to the electrostatic charge characteristics of the substrate 9 when the substrate 9 is electrified due to the contact between the cleaning liquid and the substrate 9 to the cleaning liquid liquid-contacting the liquid-contacting section. Then, current flowing through the conductive wire 82 caused by the discharge of a drop of cleaning liquid from the discharge section 3 is measured by an ammeter 85. COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:在基板处理装置的处理期间抑制基板的静电电荷,以及用于将处理液供给到基板进行处理的基板处理方法。 解决方案:将清洗液和氮气引入排放部分3,一滴清洗液体朝向基板9排出。排出部分3的清洗液管和用于引导的清洗液供应部分4 到排出部3的清洗液由玻璃状碳形成,清洗液供给部4经由导线82接地。环形感​​应电极6配置在排出部3的排出口31附近,为 与电源81连接。在作为液体接触部的清洗液管32和清洗液供给部4之间设置有电位差,感应电极6因此诱发与静电电荷特性相反极性的电荷 当基板9由于清洁液体和基板9之间的接触而被引导到与液体接触的清洗液体时,基板9 cting部分。 然后,通过电流计85测量从放电部分3排出一滴清洁液而引起的流过导线82的电流。(C)2008,JPO和INPIT
    • 7. 发明专利
    • Substrate processing apparatus
    • 基板加工设备
    • JP2014150135A
    • 2014-08-21
    • JP2013017326
    • 2013-01-31
    • Dainippon Screen Mfg Co Ltd大日本スクリーン製造株式会社
    • MIYAGI MASAHIRO
    • H01L21/304B08B3/02
    • PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which can uniformly and efficiently process a principal surface of a substrate.SOLUTION: A substrate processing apparatus 1 comprises: a spin chuck 2; first through third chemical nozzles 31-33 for discharging a chemical; first through third arms 41-43 for supporting the first through third chemical nozzles 31-33, respectively; and an arm drive mechanism 5 for swinging the first through third arms 41-43. Relative postures of the first through third arms 41-43 are changed depending on a movement position of the arm 4 and in association with the change, relative positions of the first through third chemical nozzles 31-33 are changed. This makes it possible to make droplet landing positions of the chemical supplied to a surface of a substrate W from the first through third chemical nozzles 31-33 follow surface peripheral parts W, Wof the substrate W.
    • 要解决的问题:提供能够均匀且有效地处理基板的主表面的基板处理装置。解决方案:基板处理装置1包括:旋转卡盘2; 用于排出化学品的第一至第三化学喷嘴31-33; 分别用于支撑第一至第三化学喷嘴31-33的第一至第三臂41-43; 以及用于摆动第一至第三臂41-43的臂驱动机构5。 第一至第三臂41-43的相对姿势根据臂4的移动位置而改变,并且随着变化,第一至第三化学喷嘴31-33的相对位置改变。 这使得可以使从第一至第三化学喷嘴31-33提供给基板W的表面的化学品的液滴着落位置跟随基板W的表面周边部分W,W。
    • 8. 发明专利
    • Substrate processing apparatus, and substrate processing method
    • 基板处理装置和基板处理方法
    • JP2014130872A
    • 2014-07-10
    • JP2012286859
    • 2012-12-28
    • Dainippon Screen Mfg Co Ltd大日本スクリーン製造株式会社
    • MIYAGI MASAHIRO
    • H01L21/304
    • PROBLEM TO BE SOLVED: To prevent damages of a substrate due to movement of electric charges during processing by a process liquid.SOLUTION: In a substrate processing apparatus 10, a temperature of an electricity removal liquid in which its specific resistance gradually decreases with an increase in the liquid temperature, is controlled by a temperature control part 61, and the specific resistance of the electricity removal liquid becomes larger than that of a processing liquid (SPM liquid) used for the processing in a sheet processing apparatus 1. The electricity removal liquid is reserved in an electricity removal liquid reservoir part 71. Then a plurality of substrates 9 held by a cartridge 73, are immersed in the electricity removal liquid inside the electricity removal liquid reservoir part 71, and main surfaces on both sides of the substrates 9 are brought into contact with the electricity removal liquid over the entire surfaces. Thus, electricity is removed relatively gently from the substrates 9. Then, after the end of electricity removal processing and the drying processing by a substrate drying part 75, in the sheet processing apparatus 1, the SPM liquid is supplied onto an upper surface 91 of the substrate 9, and SPM processing is performed. Thus, during the SPM processing, a large amount of electric charges are prevented from rapidly moving from the substrate 9 to the SPM liquid, and damages of the substrate 9 are prevented.
    • 要解决的问题:为了防止由处理液处理过程中的电荷移动导致的基板损坏。解决方案:在基板处理装置10中,其电阻率随着电阻逐渐降低而逐渐降低的温度 液体温度由温度控制部分61控制,并且除电液体的比电阻变得大于用于片材处理设备1中处理的处理液体(SPM液体)的电阻率。除电液体 保留在除电液储存部71中。然后,将由盒73保持的多个基板9浸渍在除电液储存部71内的除电液中,基板9的两侧的主表面 在整个表面上与除电液体接触。 因此,从基板9相对轻轻地去除电力。然后,在除电处理结束和基板干燥部75的干燥处理之后,在片材处理装置1中,将SPM液体供给到 执行基板9和SPM处理。 因此,在SPM处理中,防止大量电荷从基板9迅速移动到SPM液体,并且防止了基板9的损坏。
    • 9. 发明专利
    • Substrate processing apparatus and substrate processing method
    • 基板处理装置和基板处理方法
    • JP2013077624A
    • 2013-04-25
    • JP2011215258
    • 2011-09-29
    • Dainippon Screen Mfg Co Ltd大日本スクリーン製造株式会社
    • MIYAGI MASAHIROFUJIKAWA KAZUNORI
    • H01L21/304H01L21/306
    • PROBLEM TO BE SOLVED: To prevent damages of a substrate due to movement of electric charges during processing by a process liquid.SOLUTION: In a substrate processing apparatus 1, by controlling a dissolution amount of carbon dioxide to pure water by a carbon dioxide dissolution unit 62, specific resistance of an electricity removal liquid is turned to target specific resistance. Then, the electricity removal liquid having the specific resistance higher than that of an SPM liquid is supplied onto a substrate 9 by an electricity removal liquid supply part 6, the entire upper surface 91 of the substrate 9 is paddled with the electricity removal liquid, and thus electricity is removed relatively gently from the substrate 9. Then, after the end of electricity removal processing, the SPM liquid is supplied onto the substrate 9 by a process liquid supply part 3, and SPM processing is performed. Thus, during the SPM processing, a large amount of electric charges are prevented from rapidly moving from the substrate 9 to the SPM liquid, and damages of the substrate 9 are prevented. Also, by maintaining the specific resistance of the electricity removal liquid at the target specific resistance, in a range of not causing damages of the substrate 9, electricity removal efficiency of the substrate 9 is improved and the time required for the electricity removal processing is shortened.
    • 要解决的问题:为了防止由处理液处理过程中的电荷移动导致的基板损坏。 解决方案:在基板处理设备1中,通过二氧化碳溶解单元62控制二氧化碳对纯水的溶解量,将电除去液体的电阻率变为目标电阻率。 然后,通过除电液供给部6将比电阻高于SPM液的电除去液供给到基板9上,将基板9的整个上表面91与除电液一起划片, 从而从基板9相对轻轻地去除电力。然后,在除电处理结束之后,通过处理液供给部3将SPM液体供给到基板9上,进行SPM处理。 因此,在SPM处理中,防止大量电荷从基板9迅速移动到SPM液体,并且防止了基板9的损坏。 此外,通过将电除去液的比电阻维持在目标电阻率,在不造成基板9损坏的范围内,提高了基板9的除电效率,缩短了除电处理所需的时间 。 版权所有(C)2013,JPO&INPIT
    • 10. 发明专利
    • Chemical liquid temperature control device and method
    • 化学液体温度控制装置及方法
    • JP2013021198A
    • 2013-01-31
    • JP2011154423
    • 2011-07-13
    • Dainippon Screen Mfg Co Ltd大日本スクリーン製造株式会社
    • UEMAE SHOJIMIYAGI MASAHIRO
    • H01L21/304H01L21/306
    • PROBLEM TO BE SOLVED: To provide a chemical liquid temperature control device and method, capable of controlling a temperature of a chemical liquid without use of a heater.SOLUTION: In a chemical liquid temperature control device, a chemical liquid including sulfuric acid is stored in a temperature control tank 20, and when water is fed as an additive liquid to the chemical liquid in the temperature control tank 20 from an additive liquid feed part 30, a temperature of the chemical liquid is raised by hydration heat of the sulfuric acid, and a new liquid of the sulfuric acid is stored in a preparation tank 10, and heat exchange between the new liquid of the sulfuric acid in the preparation tank 10 and the chemical liquid in the temperature control tank 20 is performed by using a heat exchange part 40, to raise a temperature of the new liquid to a target temperature, and if necessary, the new liquid in the preparation tank 10 is cooled by a cooling part 50, and after the new liquid in the preparation tank 10 reaches the predetermined target temperature, the new liquid having the target temperature is fed to a cleansing processing part 8. The temperature of the new liquid in the preparation tank 10 is raised to the target temperature by using reaction heat generated by the reaction of the water and the sulfuric acid, allowing the temperature of the chemical liquid to be controlled without use of a heater.
    • 解决的问题:提供一种能够在不使用加热器的情况下控制化学液体的温度的化学液体温度控制装置和方法。 解决方案:在化学液体温度控制装置中,将包含硫酸的化学液体储存在温度控制罐20中,并且当将水作为添加剂液体从添加剂供给到温度控制罐20中的化学液体时 液体供给部30,通过硫酸的水合热量使化学液体的温度升高,将新的硫酸液体储存在制备罐10中,并将硫酸的新液体在 制备罐10和温度控制槽20中的化学液体通过使用热交换部40进行,以将新液体的温度升高到目标温度,并且如果需要,将制备罐10中的新液体冷却 通过冷却部件50,并且在制备罐10中的新液体达到预定目标温度之后,具有目标温度的新液体被供给到清洁处理部件8.温度 通过使用由水和硫酸的反应产生的反应热量将制备罐10中的新液体的e升高到目标温度,允许不使用加热器来控制化学液体的温度。 版权所有(C)2013,JPO&INPIT