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1. 发明专利

JP2008141085A Apparatus for treating substrate 审中-公开
标题翻译：用于处理基板的装置
公开(公告)号：JP2008141085A
公开(公告)日：2008-06-19
申请号：JP2006327794
申请日：2006-12-05
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： HARUMOTO MASAHIKO
IPC分类号： H01L21/027 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide an apparatus capable of measuring the temperature and temperature distribution of a substrate that is being heat-treated. SOLUTION: In the apparatus, a plurality of substrates W are heat-treated simultaneously with a plurality of heat treatment units 10a, 10b, 10c, 10d, and the tips of fiber scopes 16a, 16b, 16c, 16d are arranged for each heat treatment unit so that each substrate is positioned in the viewing angle of the objective lens at the tip. Eye-piece section sides 20a, 20b, 20c, 20d of respective fiber scopes are optically connected to a single thermography system 24 via a changeover device 22 for alternately changing a transmission line; and the temperature and the temperature distribution of the substrate being treated by each heat treatment unit are each measured for monitoring. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够测量正被热处理的基板的温度和温度分布的装置。解决方案：在该装置中，多个基板W与多个热处理单元10a，10b，10c，10d同时热处理，并且纤维示波器16a，16b，16c，16d的末端布置成每个热处理单元使得每个基板位于物镜的尖端的视角中。各个光纤示波器的眼片部分侧面20a，20b，20c，20d通过用于交替改变传输线的切换装置22光学地连接到单个热像仪系统24; 对每个热处理单元处理的基板的温度和温度分布进行各自的测量。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2008034740A Load lock device, substrate processing apparatus and substrate processing system equipped therewith 审中-公开
标题翻译：负载锁定装置，基板处理装置和基板处理系统
公开(公告)号：JP2008034740A
公开(公告)日：2008-02-14
申请号：JP2006208765
申请日：2006-07-31
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： HARUMOTO MASAHIKO
IPC分类号： H01L21/027 , H01L21/02
摘要： PROBLEM TO BE SOLVED: To provide a load lock device capable of rapidly increasing the degree of vacuum, and a substrate processing apparatus and a substrate processing system equipped with the same. SOLUTION: A load lock chamber RL is provided with a chamber 201. A vacuum pump 205 is connected to the bottom of the chamber 201 via a piping 205a. In the chamber 201, a noble gas supply nozzle 206 is provided on the upper part of a substrate W. In the load lock chamber RL, the noble gas is supplied from the supply nozzle 206 to replace the atmosphere of the camber 201 with the noble gas, and then, the chamber 201 is depressurized by the vacuum pump 205. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供能够快速提高真空度的负载锁定装置，以及具有该真空度的基板处理装置和基板处理系统。解决方案：装载锁定室RL设置有室201.真空泵205经由管道205a连接到室201的底部。在室201中，在基板W的上部设置有惰性气体供给喷嘴206.在负载锁定室RL中，从供给喷嘴206供给惰性气体，用贵金属代替气门201的气氛气体，然后，室201被真空泵205减压。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2007019161A Pattern forming method and coated film forming apparatus 审中-公开
标题翻译：图案形成方法和涂膜形成装置
公开(公告)号：JP2007019161A
公开(公告)日：2007-01-25
申请号：JP2005197601
申请日：2005-07-06
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： HARUMOTO MASAHIKO
IPC分类号： H01L21/027 , G03F7/40
CPC分类号： G03F7/40 , G03F7/3028
摘要： PROBLEM TO BE SOLVED: To prevent a pattern of a high aspect ratio from collapsing by devising that surface tension does not act on the pattern.
SOLUTION: Polymer 11 is supplied to a substrate W while drying the substrate W to cover the entire surface of a photosensitive coated film therewith 11. Before surface tension acts on between the patterns 7 as a result of a dried conditioner solution 9, the patterns 7 are covered with the polymer 11. The conditioner solution 9 is prevented from exerting the surface tension to the patterns 7 when drying to prevent the patterns 7 from collapsing in developing processing. Thereafter, the patterns 7 of the photosensitive coated film are removed by dry etching. Consequently, surface tension by liquid is prevented from acting also at the time of etching, so that final patterns produced from high aspect ratio patterns 7 can also be prevented from collapsing.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：通过设计表面张力不对图案起作用，防止高纵横比的图案塌陷。解决方案：聚合物11在干燥基板W的同时将其涂覆到感光涂层膜的整个表面上而被提供给基板W.在表面张力作用于干燥的调理剂9的结果之间的图案7之间时，图案7被聚合物11覆盖。当干燥时，防止调理剂溶液9向图案7施加表面张力，以防止图案7在显影处理中崩溃。此后，通过干蚀刻去除感光涂膜的图案7。因此，防止在蚀刻时液体的表面张力也起作用，从而也可以防止由高纵横比图案7产生的最终图案塌陷。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2006128248A Device and method for treating substrate 有权
标题翻译：用于处理基板的装置和方法
公开(公告)号：JP2006128248A
公开(公告)日：2006-05-18
申请号：JP2004311966
申请日：2004-10-27
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： HARUMOTO MASAHIKO , SANADA MASAKAZU
IPC分类号： H01L21/027 , B05C11/08 , B05D1/40
CPC分类号： G03F7/3021 , H01L21/6715
摘要： PROBLEM TO BE SOLVED: To provide a substrate treating device that can execute an excellent developing process without lowering the throughput.
SOLUTION: A developing solution supplied from a developing solution discharging nozzle is piled up on a substrate held in a standstill state (S101). Then a developing reaction is progressed by holding the substrate in the standstill state for a prescribed period of time while the developing solution is piled up on the substrate (S102). Successively, pure water is supplied from a pure water discharging nozzle for stopping the developing reaction (S103) and, at the same time, the substrate is rotated while part of the developing solution piled up on the surface of the substrate is caused to remain on the surface (S104). In this way, the dissolution of a resist is accelerated by setting a state where the dissolved product is easily diffused into the developing solution remaining on the surface of the substrate. Thereafter, the developing process is terminated by executing rinsing treatment (S105) and drying treatment (S106).
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够在不降低生产率的情况下执行优异的显影处理的基板处理装置。解决方案：将从显影液排出喷嘴供给的显影液堆积在保持静止状态的基板上（S101）。然后，通过将基板保持在停止状态一段规定的时间，同时将显影液堆积在基板上，进行显影反应（S102）。接着，从纯水排出喷嘴供给纯水以停止显影反应（S103），并且同时旋转基板，同时使堆叠在基板表面上的显影液的一部分保持在表面（S104）。以这种方式，通过使溶解产物容易扩散到残留在基板表面上的显影液中的状态来加速抗蚀剂的溶解。此后，通过执行冲洗处理（S105）和干燥处理来终止显影处理（S106）。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2005217164A Substrate processing method and apparatus thereof 有权
标题翻译：基板处理方法及其装置
公开(公告)号：JP2005217164A
公开(公告)日：2005-08-11
申请号：JP2004021657
申请日：2004-01-29
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： HARUMOTO MASAHIKO , SANADA MASAKAZU
IPC分类号： G03F7/38 , H01L21/027 , H01L21/68 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To enhance the in-plane film thickness uniformity and the micro dimensional uniformity by suppressing ununiformed cooling through positive cooling processing while carrying out heat treatment. SOLUTION: When a heat treatment head 7 is moved to scan a substrate W, an infrared ray IR is sequentially emitted onto the substrate W with a prescribed width, the part of the infrared ray transmitted through the substrate W contributes to the temperature rise of the substrate W, the rest contributes to the temperature rise of a coated film F, and finally the heat value is provided to the entire face of the coated film F coated to the film F. Ununiform cooling can be suppressed by providing the prescribed heat value to the film F and positively cooling the substrate W and the film F with upper and lower cooling mechanisms 21 just after the provision of the prescribed heat value to the film F. Since the reaction related to the heat treatment of the film F can be controlled, the in-plane film thickness uniformity and the micro dimension uniformity can be improved. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：通过在进行热处理的同时通过正冷却处理来抑制不均匀的冷却来提高面内膜厚均匀性和微尺寸均匀性。解决方案：当热处理头7移动以扫描衬底W时，红外线IR以规定的宽度顺序地发射到衬底W上，透过衬底W的部分红外线有助于温度衬底W的上升，其余部分有助于涂膜F的温度上升，最后将热值提供给涂覆在膜F上的涂膜F的整个面。可以通过提供规定的方式来抑制不均匀的冷却对膜F的热值，并且在向膜F提供规定的热值之后，利用上下冷却机构21将基板W和膜F正向冷却。由于与膜F的热处理有关的反应可以控制面内膜厚均匀性和微尺寸均匀性。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2004193538A Method and device for chemical development of pattern 有权
公开(公告)号：JP2004193538A
公开(公告)日：2004-07-08
申请号：JP2003056801
申请日：2003-03-04
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： SANADA MASAKAZU , HARUMOTO MASAHIKO , KOBAYASHI HIROSHI , MATSUNAGA SANENOBU , MORITA AKIHIKO
IPC分类号： G03F7/30 , B05C11/10 , B05D1/26 , B05D1/40 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To improve the uniformity of the supply form of rinsing liquid. SOLUTION: The substrate W is held by a substrate holding part 10 in an approximately horizontal position and is rotated by a spin motor 113. One end part of a rinsing liquid supply nozzle 140 is supported by a second moving mechanism 150 rotatably and is rotated to pass over the substrate W. The rinsing liquid supply nozzle 140 is rotated to pass over the substrate W while discharging rinsing liquid from a discharge part of the rinsing liquid supply nozzle 140. In the process, the rinsing liquid supply nozzle 140 and the substrate W are rotated so that a virtual scanning direction La of the substrate W is substantially vertical to an extension direction of the rinsing liquid supply nozzle 140. COPYRIGHT: (C)2004,JPO&NCIPI

7. 发明专利

JP2008060288A Substrate treating system 审中-公开
标题翻译：基板处理系统
公开(公告)号：JP2008060288A
公开(公告)日：2008-03-13
申请号：JP2006234819
申请日：2006-08-31
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： HARUMOTO MASAHIKO
IPC分类号： H01L21/027 , H01L21/677
摘要： PROBLEM TO BE SOLVED: To provide a substrate treating system measuring the temperature and temperature distribution of a substrate with an operation and the substrate during a treating on an in-line and being capable of detecting the abnormality of the substrate at a stage before the inspection process of the substrate.
SOLUTION: In the substrate treating system, the temperature and temperature distribution of the substrate W heated and treated by a hot plate 10 are measured and monitored by a thermography 28. In the substrate treating system, the substrate having the abnormality is transferred to the inspection process and returned to a treating process before the inspection process and treating conditions, at a time when the substrate having the abnormality in the treating process after the inspection process are adjusted when the abnormality of the temperature and temperature distribution of the substrate is detected. In the substrate treating system, the treating conditions of the substrates are adjusted in this case, after the substrate having the abnormality in the treating process before the treating process after the inspection process.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种基板处理系统，其用于在线处理期间通过操作和基板测量基板的温度和温度分布，并且能够在一个阶段检测基板的异常在基板的检查过程之前。解决方案：在基板处理系统中，通过热成像28测量并加热和加热处理的基板W的温度和温度分布。在基板处理系统中，转印具有异常的基板在检查处理和处理条件之前返回到处理工序，在基板的温度和温度分布的异常为基础时调整检查处理后的处理工序中的异常的基板为检测。在基板处理系统中，在这种情况下，在检查处理之后的处理工序之前的处理工序中的基板发生异常之后，调整基板的处理条件。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2004172198A Substrate processing method and device therefor 有权
标题翻译：基板处理方法及其装置
公开(公告)号：JP2004172198A
公开(公告)日：2004-06-17
申请号：JP2002333503
申请日：2002-11-18
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： HARUMOTO MASAHIKO , SANADA MASAKAZU
IPC分类号： G03F7/30 , G03F7/00 , G03F7/38 , H01L21/027
CPC分类号： G03F7/38
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing method and a device therefor which are capable of simply setting the size of a pattern. SOLUTION: In accordance with a difference between the size of an actual pattern obtained by processing under an exposure condition reduced in the change of the pattern size even when the focus of light in exposure is changed or a pivotal point, and a mask pattern size or a pivotal shift, a switching picture for switching whether a substrate processing condition is set or not is indicated to operate the processing device. When the substrate processing condition is set in accordance with the pivotal shift, a kind selecting picture which shows what kind is selected from the substrate processing condition consisting of the kind of photo resist, the kind of pattern size and the kind of a pattern shape and a picture for selecting the substrate processing condition to select one substrate processing condition from a plurality of substrate processing conditions in the same kinds in various kinds respectively selected by the picture for selecting the kind are indicated to operate the device. The optimum developing time is obtained based on correlation between the developing time in selected respective substrate processing conditions and the pivotal shift whereby the pattern size can be simply set. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供能够简单地设定图案尺寸的基板处理方法及其装置。解决方案：根据在曝光中的光的焦点被改变时的图案尺寸的变化减小的曝光条件下的处理获得的实际图案的尺寸或枢转点之间的差异，以及掩模指示图案尺寸或枢转位移，用于切换是否设置基板处理条件的切换图像来操作处理装置。当根据关键位移设定基板处理条件时，显示从由光刻胶的种类，图案尺寸的种类和图案形状的种类组成的基板处理条件中选择什么样的种类选择图像，以及指示用于从分别由用于选择种类的图像选择的各种类型的相同种类的基板处理条件中选择一个基板处理条件以选择一个基板处理条件的图片来操作该装置。基于所选择的各个基板处理条件中的显影时间和可以简单地设置图案尺寸的枢转偏移之间的相关性获得最佳显影时间。版权所有（C）2004，JPO

9. 发明专利

JP2008141086A Apparatus for treating substrate 审中-公开
标题翻译：用于处理基板的装置
公开(公告)号：JP2008141086A
公开(公告)日：2008-06-19
申请号：JP2006327795
申请日：2006-12-05
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： HARUMOTO MASAHIKO
IPC分类号： H01L21/027 , H01L21/02
摘要： PROBLEM TO BE SOLVED: To provide an apparatus capable of measuring temperature and temperature distribution in a silicon substrate, accompanying operation and in a silicon substrate being heat-treated in-line. SOLUTION: The apparatus for treating substrate has a thermography system 28, where thermography system measures the temperature and the temperature distribution of the silicon substrate W being heat-treated by a heating plate 10, and a lens comprising the optical system of the thermography system 28 is formed by a germanium material. COPYRIGHT: (C)2008,JPO&INPIT

10. 发明专利

JP2005044898A Substrate treatment equipment and substrate treatment method 审中-公开
标题翻译：基板处理设备和基板处理方法
公开(公告)号：JP2005044898A
公开(公告)日：2005-02-17
申请号：JP2003201176
申请日：2003-07-24
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： SANADA MASAKAZU , HARUMOTO MASAHIKO , HORI SHINPEI
IPC分类号： G03F7/30 , B05C5/02 , B05C11/08 , B05C11/10 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide substrate treatment equipment wherein development reaction product or the like on a substrate can be removed more completely.
SOLUTION: After predetermined time progresses from forming liquid peak of developer on the substrate W, rinse liquid is spouted on the substrate W while moving a rinse liquid supply nozzle 40 to a predetermined forward scanning direction La so that it may pass through an upper part of the substrate W, and development reaction on the substrate W is stopped. After the rinse liquid supply nozzle 40 moves to the forward scanning direction La, inversion movement of the rinse liquid supply nozzle 40 is performed backwardly to the forward scanning direction La while continuing spouting of the rinse liquid, and the rinse liquid is supplied again to a region of a move finished edge side in the substrate W.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供可以更完全地除去基板上的显影反应产物等的基板处理设备。解决方案：在从衬底W上形成显影剂的液体峰值开始预定时间之后，将冲洗液体喷射到衬底W上，同时将冲洗液体供给喷嘴40移动到预定的正向扫描方向La，使得其可以通过衬底W的上部，并停止在衬底W上的显影反应。在冲洗液供给喷嘴40移动到正向扫描方向La之后，冲洗液供给喷嘴40的反转运动向后扫描方向La进行，同时继续喷射冲洗液，并将冲洗液再次供给到（C）2005，JPO＆NCIPI

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