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1. 发明专利

JP2008116361A Semiconductor device and sorting method of same 有权
标题翻译：半导体器件及其分配方法
公开(公告)号：JP2008116361A
公开(公告)日：2008-05-22
申请号：JP2006300761
申请日：2006-11-06
申请人： Denso Corp , 株式会社デンソー
发明人： YAMAMOTO TOMOHISA
IPC分类号： G01R31/26 , H01L21/02 , H01L21/76 , H01L21/762 , H01L27/12
摘要： PROBLEM TO BE SOLVED: To provide a sorting method of a semiconductor device capable of guaranteeing the pressure-resistant performance of an insulating film constituting an SOI structure semiconductor substrate, and to provide a semiconductor device.
SOLUTION: In a main-surface-side surface section of a semiconductor layer 30 constituting the SOI structure semiconductor substrate, a low-voltage circuit area 200 having a low-voltage element 201 is surrounded with an insulating/separating trench 500 reaching the insulating film 20, a high-voltage circuit area 300 having a high-voltage element 301 is surrounded with an insulating/separating trench 501 reaching the insulating film 20, arbitrary voltage is applied between a high-voltage-side field area f1 surrounded with the innermost insulating/separating trench 501 and a low-voltage-side field area f2 surrounded with the innermost insulating/separating trench 500, thereby guaranteeing the pressure resistance of the insulating film 20 to the high-voltage-side field area f1 and the low-voltage-side field area f2.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供能够确保构成SOI结构半导体衬底的绝缘膜的耐压性能并提供半导体器件的半导体器件的分选方法。解决方案：在构成SOI结构半导体衬底的半导体层30的主表面侧表面部分中，具有低电压元件201的低压电路区域200被绝缘/分离沟槽500包围，达到绝缘膜20，具有高电压元件301的高压电路区域300被到达绝缘膜20的绝缘/分离沟槽501包围，任意电压被施加在由最内侧绝缘分离槽501和由最内侧绝缘分离槽500包围的低压侧场区域f2，从而保证绝缘膜20对高压侧场区域f1的耐压性和低电压侧场区f2。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2006121775A Signal transmission circuit 有权
标题翻译：信号传输电路
公开(公告)号：JP2006121775A
公开(公告)日：2006-05-11
申请号：JP2004304275
申请日：2004-10-19
申请人： Denso Corp , 株式会社デンソー
发明人： SOFUE SATOSHI , YAMAMOTO TOMOHISA
IPC分类号： H02J7/02 , B60L11/18 , H01M2/10 , H01M10/44 , H02J7/00
CPC分类号： Y02T10/7005
摘要： PROBLEM TO BE SOLVED: To enable operation by receiving a power supply voltage from a battery pack and reduce impact on the battery pack as much as possible even when the voltage of each cell is varied. SOLUTION: A comparator CP3 is operated by receiving power supply voltage from terminals T2 and T4 and compares the voltage V3 at terminal T3 with a reference voltage VR3 at node N3. If V3 VR3, the transistor Q2 is turned on and the differential voltage between the voltage V3 at the terminal T3 and the voltage V4 at the terminal T4 is applied to the diode D1. Consequently, the transistor Q4 is turned off and the transmission signal has an H level. In the series of operations, the current flowing into a battery pack 1 is low and becomes constant. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：即使当每个电池的电压变化时，通过从电池组接收电源电压并尽可能地减小对电池组的影响来使能操作。解决方案：通过从端子T2和T4接收电源电压来操作比较器CP3，并将端子T3处的电压V3与节点N3处的参考电压VR3进行比较。如果V3 VR3，晶体管Q2导通，端子T3处的电压V3与端子T4的电压V4之间的差分电压被施加到二极管D1。因此，晶体管Q4截止，发送信号具有H电平。在一系列操作中，流入电池组1的电流低并且变得恒定。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2005252789A Circuit system 有权
标题翻译：电路系统
公开(公告)号：JP2005252789A
公开(公告)日：2005-09-15
申请号：JP2004062149
申请日：2004-03-05
申请人： Denso Corp , 株式会社デンソー
发明人： SOFUE SATOSHI , YAMAMOTO TOMOHISA
IPC分类号： H01L27/04 , B60L11/12 , B60R16/02 , H01L21/822 , H02J7/00 , H03K17/10
CPC分类号： H02J7/0026 , H01L27/1203 , H01L29/7317 , H02J7/0029 , Y02T10/7055
摘要： PROBLEM TO BE SOLVED: To provide a circuit system for transmitting a signal between circuits, operated with different reference voltages without having to electrically insulate it. SOLUTION: In a battery ECU 22, a cell block monitoring unit 25 is provided to each cell block 24 of a main engine battery 18 of HEV 11, in which two or more unit cells 23 are connected in series, and a control unit 26 carries out charging and discharging control or the like, based on a signal generated from the cell block monitoring units 25. In this case, a transistor 39 is turned on by the generated signal to transmit a signal to a cell block 24(2) on the low voltage side. On the side of the cell block 24(2), a transistor 49 is turned on by the transmitted signal, to transmit a signal to a cell block 24(1) on the low voltage side. On the side of cell block 24(1), a transistor 53 is turned on by the transmitted signal, to generate a signal as an output to a control unit 26. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于在电路之间传输信号的电路系统，以不同的参考电压工作，而不必将其电绝缘。解决方案：在电池ECU22中，单元块监视单元25被提供给HEV11的主电池18的每个单元块24，其中两个或多个单元电池23串联连接，并且控制单元26基于从单元块监视单元25生成的信号进行充放电控制等。在这种情况下，通过产生的信号使晶体管39导通，将信号发送到单元块24（2 ）在低压侧。在单元块24（2）侧，通过发送信号使晶体管49导通，将信号发送到低压侧的单元块24（1）。在单元块24（1）的一侧，晶体管53被发送的信号导通，以产生作为控制单元26的输出的信号。（C）2005年，JPO和NCIPI

4. 发明专利

JP2007043871A Constant-current circuit 有权
标题翻译：恒流电路
公开(公告)号：JP2007043871A
公开(公告)日：2007-02-15
申请号：JP2005228094
申请日：2005-08-05
申请人： Denso Corp , 株式会社デンソー
发明人： SOFUE SATOSHI , YAMAMOTO TOMOHISA
IPC分类号： H02J7/02 , G05F3/26
摘要： PROBLEM TO BE SOLVED: To supply a constant-current to circuits provided to each cell of a battery pack with a smaller circuit scale than before.
SOLUTION: A reference voltage VBG of a band-gap reference 18 is converted into a constant current by a voltage-current conversion circuit 19. This constant current is made to return at a current mirror circuit 20, flows into a current mirror circuit 17, and is outputted to a reference voltage generating circuit 13, inside an overcharge detection circuit 12 of cells BC5-BC8 via transistors Q17-Q20. The constant current, outputted from the transistor Q21, is made to return at a current mirror circuit 21, flows into a current mirror circuit 16, and is outputted to the reference voltage generating circuit 13 that is inside the overcharge detection circuit 12 of cells BC1-BC4 via transistors Q12-Q15.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：以比以前更小的电路规模向设置到电池组的每个电池的电路提供恒定电流。解决方案：通过电压 - 电流转换电路19将带隙基准18的参考电压VBG转换为恒定电流。该恒定电流在电流镜电路20处返回，流入电流镜电路17，经由晶体管Q17-Q20输出到电池BC5-BC8的过充电检测电路12的内部的基准电压发生电路13。从晶体管Q21输出的恒定电流在电流镜电路21返回，流入电流镜电路16，并被输出到电池BC1的过充电检测电路12内部的基准电压产生电路13 -BC4通过晶体管Q12-Q15。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2002153045A CHARGE-PUMP CIRCUIT AND LOAD-DRIVING CIRCUIT USING THE SAME 失效
公开(公告)号：JP2002153045A
公开(公告)日：2002-05-24
申请号：JP2000343858
申请日：2000-11-10
申请人： DENSO CORP
发明人： YAMAMOTO TOMOHISA
IPC分类号： G05F3/24 , H02M3/07
摘要： PROBLEM TO BE SOLVED: To improve reliability for the life of a voltage-boosting capacitor provided inside and to reduce current consumption even under a condition that a power supply voltage fluctuates. SOLUTION: A constant-voltage generating circuit 25 generates a reference voltage VS that is lower by a constant voltage VT than an output voltage VB of a power supply +B to output it to a voltage-boosting circuit 23. This voltage-boosting circuit 23 comprises an inverter circuit 30 in which an output voltage changes alternately between the power supply voltage VB and the reference voltage VS in accordance with an inverted operation synchronized with an output of an oscillating circuit 24, and another inverter circuit 32 in which the output voltage changes alternately between the reference voltage VS and the power supply voltage VB in accordance with cyclic inverted operations of a phase difference at 180 deg. from the inverter circuit 30. A charging current is caused to flow from the power supply +B to a first capacitor 36 via a diode 33 during a period when the output of the inverter circuit 30 changes to the reference voltage VS. During the period when the output of the inverter circuit 32 changes to the reference voltage VS, charge of the first capacitor is transferred to a second capacitor 37 through a diode 34.

6. 发明专利

JPH10225101A CHARGE-UP CIRCUIT 失效
公开(公告)号：JPH10225101A
公开(公告)日：1998-08-21
申请号：JP2071797
申请日：1997-02-03
申请人： DENSO CORP
发明人： ISHIKAWA TAKESHI , YAMAMOTO TOMOHISA , BAN HIROYUKI
IPC分类号： H02M3/07
摘要： PROBLEM TO BE SOLVED: To make it possible to obtain a desired stable charge-up voltage. SOLUTION: In a charge pump circuit in which a power line 1 charges the positive side of a first capacitor 3 via a diode 2 and in turn the positive side of the first capacitor 3 charges the positive side of a second capacitor 5 via a diode 4 to output a charge-up voltage from the positive side of the second capacitor 5, a comparator 11, which compares the voltage of the negative side of the first capacitor 3 with a first reference voltage, and a comparator 12, which compares the voltage of the negative side of the second capacitor 5 with a second reference voltage, are provided to constitute a self-oscillation type in which the outputs from the first and second comparators 11, 12 alternately set and reset a flip-flop 13 to let it alternately charge and discharge each negative side of the first and second capacitors 3, 5.

7. 发明专利

JP2008098201A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2008098201A
公开(公告)日：2008-04-24
申请号：JP2006274415
申请日：2006-10-05
申请人： Denso Corp , 株式会社デンソー
发明人： YAMAMOTO TOMOHISA
IPC分类号： H01L21/822 , H01L21/76 , H01L21/762 , H01L21/8222 , H01L27/04 , H01L27/082 , H01L27/12
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device that can extend operation lifetime of an insulated isolation trench in the high voltage side.
SOLUTION: The semiconductor device is formed by providing, on a semiconductor substrate including an embedded oxide film 30, a low voltage circuit region 200 in which a plurality of low voltage elements 201 are formed and a high voltage circuit region 300 in which a plurality of high voltage elements 301 are formed. Moreover, the semiconductor device further includes an insulated isolation trench 61 formed to reach an embedded oxide film 30 surrounding the high voltage circuit region 300, an insulated isolation trench 62 formed to reach the embedded oxide film 30 within the region surrounded by the insulated isolation trench 61, a high voltage side element forming region e2 in which each high voltage element 301 surrounded by the insulated isolation trench 62 is formed, and a high voltage side field region f2 in which no element is formed between the insulated isolation trench 61 and the insulated isolation trench 62. In the semiconductor device, a potential of the high voltage side element forming region e2 is set almost equal to the potential of the high voltage side field region f2.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供能够延长高压侧的绝缘隔离沟槽的工作寿命的半导体装置。解决方案：半导体器件通过在包括嵌入氧化物膜30的半导体衬底上提供形成有多个低电压元件201的低电压电路区域200和高电压电路区域300而形成，其中，形成多个高电压元件301。此外，半导体器件还包括形成为到达围绕高压电路区域300的嵌入式氧化膜30的绝缘隔离沟槽61，形成为在由绝缘隔离沟槽围绕的区域内到达嵌入式氧化物膜30的绝缘隔离沟槽62 如图61所示，形成有由绝缘隔离沟槽62包围的每个高电压元件301形成的高电压侧元件形成区域e2和在绝缘隔离沟槽61和绝缘隔离沟槽61之间不形成元件的高压侧场区域f2 隔离沟槽62.在半导体器件中，高电压侧元件形成区域e2的电位被设定为几乎等于高压侧场区域f2的电位。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JPH1188133A LOAD DRIVE CIRCUIT 失效
公开(公告)号：JPH1188133A
公开(公告)日：1999-03-30
申请号：JP19737097
申请日：1997-07-23
申请人： DENSO CORP
发明人： ISHIKAWA TAKESHI , YAMAMOTO TOMOHISA , BAN HIROYUKI
IPC分类号： H03K17/06 , H03K17/08 , H03K17/567
摘要： PROBLEM TO BE SOLVED: To provide the load drive circuit of a high side form where deterioration in performance and destruction of a MOS transistor(TR) are surely prevented. SOLUTION: The circuit that is provided with an N-channel MOS TR 1 whose drain connects to a point of a power supply voltage VD and whose source connects to a load L at a terminal opposite to a ground level terminal and with a charge pump circuit 2 that boosts the power supply voltage VD and provides an output of the boosted voltage. A control circuit 3 gives an output voltage VO of the charge pump circuit 2 to a gate of the TR 1 to make the TR 1 conductive and to supply a current to the load L, has a clamp circuit 5 consisting of Zener diodes ZD1, ZD2 connected in series whose anode connects to a line of the power supply voltage VO and whose cathode connects to an output terminal 2a between the output terminal 2a of the charge pump circuit 2 and the line of the power supply voltage VD. As a result application of a voltage higher than the breakdown voltage between a gate and a drain of the TR 1 is surely prevented.

9. 发明专利

JPH1118291A OVERVOLTAGE PROTECTION DEVICE 失效
公开(公告)号：JPH1118291A
公开(公告)日：1999-01-22
申请号：JP16915297
申请日：1997-06-25
申请人： DENSO CORP
发明人： YAMAMOTO TOMOHISA , BAN HIROYUKI
IPC分类号： G01R19/165 , B60R16/02 , H02H3/20 , H02H9/04 , H03K17/08 , H03K17/16
摘要： PROBLEM TO BE SOLVED: To prevent failure of an output to work properly, when an output transistor is protected against surge voltage and overvoltage produced by noise lasts for a short time. SOLUTION: A timer circuit 300 which, when a detection signal from an overvoltage detection circuit 100 continues for a specified time, outputs a detection signal to an output circuit 200, is placed between the overvoltage detection circuit 100 and the output circuit 200. If overvoltage produced due to noise continues for a short time, the timer circuit 300 enables avoidance of bringing an output transitor T5 in continuity to prevent so as the output control from being executed. Therefore, malfunctions of the circuits can be prevented in such a case.

10. 发明专利

JP2010020481A Reference voltage generation device 审中-公开
标题翻译：参考电压发生装置
公开(公告)号：JP2010020481A
公开(公告)日：2010-01-28
申请号：JP2008179402
申请日：2008-07-09
申请人： Denso Corp , 株式会社デンソー
发明人： YAMAMOTO TOMOHISA
IPC分类号： G05F3/24
摘要： PROBLEM TO BE SOLVED: To maintain output of a reference voltage to the utmost, even when a power supply voltage is reduced.
SOLUTION: When a cathode side voltage V104 of a Zener diode ZD101 of a reference voltage generating circuit 100 is reduced, as compared to a Zener voltage which is to be originally generated, first and second reference voltage support circuits 200, 300 makes a replenishment current flow through a voltage division resistor 103 on a low-voltage side of the reference voltage generation circuit 100. Accordingly, even when voltages applied to a voltage division resistor 102 and the voltage division resistor 103 are reduced, as compared to the Zener voltage to be originally applied because the power supply voltage VB is reduced, the Zener diode ZD101 of the reference voltage generating circuit 100 cannot generate the Zener voltage; and since the voltage V102 of the voltage dividing resistor 103 on the lower voltage side is increased by the amount of current replenished, reduction in the reference voltage VO can be suppressed.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：即使当电源电压降低时，为了最大限度地保持参考电压的输出。解决方案：与基本电压产生电路100的齐纳二极管ZD101的阴极侧电压V104相比，与最初产生的齐纳电压相比，第一和第二参考电压支持电路200,300 补充电流流过参考电压产生电路100的低电压侧的分压电阻器103.因此，即使施加到分压电阻器102和分压电阻器103的电压相比，齐纳二极管由于电源电压VB降低而原来施加的电压，参考电压产生电路100的齐纳二极管ZD101不能产生齐纳电压; 并且由于低电压侧的分压电阻103的电压V102增加补充电流量，所以能够抑制基准电压VO的降低。版权所有（C）2010，JPO＆INPIT

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