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1. 发明专利

JP2005142576A Lithographic treatment cell, lithographic apparatus, track, and device manufacturing method 有权
标题翻译：光刻处理细胞，光刻设备，轨迹和器件制造方法
公开(公告)号：JP2005142576A
公开(公告)日：2005-06-02
申请号：JP2004329761
申请日：2004-10-15
申请人： Asml Netherlands Bv , エイエスエムエルネザランドズベスローテンフエンノートシャップ
发明人： KRUIJSWIJK STEFAN GEERTE , RARUTO WILLEM DE LIEUW , LUEHRMANN PAUL FRANK , TEL WIM TJIBBO , VAN WIJNEN PAUL JACQUES , TROOST KARS ZEGER
IPC分类号： H01L21/027 , G03B27/52 , G03F7/20
CPC分类号： G03F7/70991
摘要： PROBLEM TO BE SOLVED: To provide a lithographic treatment cell capable of reworking a defective wafer more efficiently and / or more quickly, and further provide a lithographic apparatus, a track, and a device manufacturing method.
SOLUTION: A lot is loaded via an input / output port I / O1, and next a substrate is applied by a spin applying machine SC, and is exposed by a lithographic apparatus LA, and next is developed by a developing machine DE. Thereafter, the substrate which is already developed is measured or inspected by an integrated measurement device IM, and an acceptable substrate is sent to an input / output port I / O2, and the lot which is already treated is assembled before the lot is transported to another process. The substrate which is rejected by an inspection is, for example, branched to a rework station RW when one or more defects are detected.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供能够更有效和/或更快速地对缺陷晶片进行再加工的光刻处理单元，并进一步提供光刻设备，轨道和器件制造方法。解决方案：大量通过输入/输出端口I / O1加载，接下来通过旋涂机SC施加衬底，并由光刻设备LA曝光，接下来由显影机DE 。此后，通过集成的测量装置IM测量或检查已经显影的基板，并且将可接受的基板发送到输入/输出端口I / O2，并且已经处理的批次在批次被运送到之前被组装另一个过程。当检测到一个或多个缺陷时，通过检查被拒绝的基板例如分支到返工台RW。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2006179933A Lithographic apparatus and method of manufacturing device 有权
标题翻译：光刻设备及其制造方法
公开(公告)号：JP2006179933A
公开(公告)日：2006-07-06
申请号：JP2005369992
申请日：2005-12-22
申请人： Asml Netherlands Bv , エイエスエムエルネザランドズベスローテンフエンノートシャップ
发明人： KRUIJSWIJK STEFAN GEERTE , DIERICHS MARCEL MATHIJS T M , MARKUS FRANCISCUS ANTONIUS EUR , MULDER HEINE MELLE
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： G03F7/70108 , G03F7/70275
摘要： PROBLEM TO BE SOLVED: To provide a lithographic apparatus in which the uniformity of a radiation beam is improved. SOLUTION: The lithographic apparatus includes an illumination system configured to provide a radiation beam, a patterning device configured to pattern the radiation beam to form a patterned radiation beam, and a projection system configured to project the patterned radiation beam onto a substrate. An optical assembly includes multiple optical elements two-dimensionally arranged between a radiation source and the patterning device to create a predetermined angular distribution of the radiation beam. In order to improve the uniformity of the radiation beam, the optical elements are selected from a predetermined number of optical elements having different shapes and/or sizes. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种提高辐射束均匀性的光刻设备。解决方案：光刻设备包括被配置为提供辐射束的照明系统，配置成图案化辐射束以形成图案化辐射束的图案形成装置，以及被配置为将图案化的辐射束投影到衬底上的投影系统。光学组件包括在辐射源和图案形成装置之间二维布置的多个光学元件，以产生辐射束的预定角度分布。为了提高辐射束的均匀性，光学元件从具有不同形状和/或尺寸的预定数量的光学元件中选择。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2007281455A Lithographic treating cell, and method for manufacturing device 有权
标题翻译：光刻处理单元及其制造方法
公开(公告)号：JP2007281455A
公开(公告)日：2007-10-25
申请号：JP2007083220
申请日：2007-03-28
申请人： Asml Netherlands Bv , エーエスエムエルネザーランズビー.ブイ.
发明人： KRUIJSWIJK STEFAN GEERTE , LEEMING JOHN G
IPC分类号： H01L21/027
CPC分类号： G03B27/42 , G03F7/70466 , G03F7/70991
摘要： PROBLEM TO BE SOLVED: To provide a method of lithography capable of forming a fine pattern and a device used therefor.
SOLUTION: A double treatment technology to manufacture a device that includes the execution of a first patterning step for forming an opening in a resist layer, then the opening is filled before a first resist layer is exfoliated and is replaced with a second resist layer used for a second exposure is disclosed. A lithographic cell includes an integrated filling and/or exfoliating unit that can be used to execute the foregoing technology.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供能够形成精细图案的光刻方法及其使用的装置。解决方案：一种用于制造包括执行在抗蚀剂层中形成开口的第一图案化步骤的装置的双重处理技术，然后在第一抗蚀剂层剥离之前填充该开口并且用第二抗蚀剂公开了用于第二次曝光的层。光刻单元包括可用于执行前述技术的集成填充和/或去角质单元。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2007180547A Lithography apparatus, patterning device, and method of manufacturing device 有权
标题翻译：平面设备，绘图设备和制造设备的方法
公开(公告)号：JP2007180547A
公开(公告)日：2007-07-12
申请号：JP2006342148
申请日：2006-12-20
申请人： Asml Netherlands Bv , エーエスエムエルネザーランズビー.ブイ.
发明人： KRUIJSWIJK STEFAN GEERTE
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： G03F7/70441 , G03F1/36 , G03F1/44 , G03F1/68 , G03F7/70516 , G03F7/70683 , G03F9/7076
摘要： PROBLEM TO BE SOLVED: To provide a method of proximity matching recognition having no defect of a method based on SEM, and a lithography apparatus appropriate for such a method. SOLUTION: The lithography apparatus has an alignment system for aligning a patterning device with a substrate. The patterning device includes a proximity mark 10 having several proximity structures 20 adjacent to one another, and each of the proximity structures 20 includes a space structure 11, a reference structure 12, and an inspection structure 13. The reference structure 12 includes first number of lines with a reference pitch, and the inspection structure 13 includes second number of lines with an inspection pitch. The patterning device is used for performing proximity matching using the alignment system, or performing further quality measurement such as a dose set suit for size. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种没有基于SEM的方法的缺陷的接近匹配识别方法，以及适用于这种方法的光刻设备。光刻设备具有用于使图案形成装置与衬底对准的对准系统。图案形成装置包括具有彼此相邻的多个邻近结构20的接近标记10，并且每个邻近结构20包括空间结构11，参考结构12和检查结构13.参考结构12包括第一数量具有参考间距的线，并且检查结构13包括具有检查间距的第二数量的线。图案形成装置用于使用对准系统进行接近度匹配，或者进行进一步的质量测量，例如针对尺寸的剂量组合。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2010010677A Lithography equipment and method of operating the same 有权
标题翻译： LITHOGRAPHY设备及其操作方法
公开(公告)号：JP2010010677A
公开(公告)日：2010-01-14
申请号：JP2009145234
申请日：2009-06-18
申请人： Asml Netherlands Bv , エーエスエムエルネザーランズビー.ブイ.
发明人： KADIJK EDWIN CORNELIS , KRUIJSWIJK STEFAN GEERTE
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： G03F7/70341
摘要： PROBLEM TO BE SOLVED: To provide lithography equipment in which the possibility of the formation of bubbles in, for example, a recessed portion is reduced and is desirably minimized substantially. SOLUTION: A substrate table is configured and disposed to hold a substrate having an edge feature. A projection system is configured to project a radiation beam with a pattern onto the substrate. A fluid treatment system is configured and disposed to supply a flow of liquid into a space between the projection system and the substrate table and retain at least a part of the liquid in a space. A positioner is configured to position the substrate on the substrate table such that the edge feature is located downstream of the substrate in the flow of liquid. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供其中在例如凹陷部分中形成气泡的可能性减小并且希望最小化的光刻设备。解决方案：衬底台被配置和设置成保持具有边缘特征的衬底。投影系统被配置为将具有图案的辐射束投射到基板上。流体处理系统被配置和设置成将液体流提供到投影系统和衬底台之间的空间中并将至少一部分液体保持在空间中。定位器被配置为将衬底定位在衬底台上，使得边缘特征位于液体流中的衬底的下游。版权所有（C）2010，JPO＆INPIT

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