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1. 发明专利

JP2005126813A Method for producing silicon oxide film, and method for producing optical multi-layer film 有权
标题翻译：生产硅氧烷膜的方法，以及生产光学多层膜的方法
公开(公告)号：JP2005126813A
公开(公告)日：2005-05-19
申请号：JP2004086299
申请日：2004-03-24
申请人： Asahi Glass Ceramics Co Ltd , Asahi Glass Co Ltd , 旭硝子セラミックス株式会社 , 旭硝子株式会社
发明人： IKEDA TORU , MASHITA NAOHIRO , SHIDOUJI EIJI , KAMIYAMA TOSHIHISA , KATAYAMA YOSHIHITO
IPC分类号： G02B5/26 , C23C14/10 , C23C14/34 , G02B1/11 , G02B5/28
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a silicon oxide film with which the film having uniform optical constants, such as refractive index, absorption coefficient, etc., can be formed at high deposition rate. SOLUTION: The method for producing the silicon oxide film is performed, with which the silicon oxide film is formed on a substrate by using a sputtering target comprising silicon carbide and silicon with a ratio in number of atoms of C to Si being from 0.5 to 0.95 and carrying out AC sputtering having from 1 to 1000 kHz frequency in an atmosphere containing oxidizing gas. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种可以以高沉积速率形成具有均匀光学常数的膜（如折射率，吸收系数等）的氧化硅膜的制造方法。
解决方案：进行氧化硅膜的制造方法，通过使用包含碳化硅和硅的溅射靶，在基板上形成氧化硅膜，其中C与Si的原子数之比来自 0.5〜0.95，在含有氧化气体的气氛中进行1〜1000kHz的AC溅射。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2010150594A Reactive sputtering method and optical member 审中-公开
标题翻译：反应溅射方法和光学成员
公开(公告)号：JP2010150594A
公开(公告)日：2010-07-08
申请号：JP2008329438
申请日：2008-12-25
申请人： Asahi Glass Co Ltd , 旭硝子株式会社
发明人： MASHITA NAOHIRO , OSADA TAKASHI , TATEMURA MITSUYUKI , ISHIKAWA MASAHITO
IPC分类号： C23C14/34 , G02B5/28
摘要： PROBLEM TO BE SOLVED: To provide a reactive sputtering method by which the compound film of a predetermined metal is formed in a high productivity under the condition of continuing the discharge in a stable transition state without depositing metal film around a sputtering target, and to provide an optical member.
SOLUTION: In the reactive sputtering method, an inert gas and a reactive gas are introduced into a vacuum chamber to form the compound film of the sputtering target and the reactive gas on a film forming substrate in the vacuum chamber. The discharge is started in a state that applying voltage is set so as to obtain the transition state with the power-to-be-applied lower than that applied to the sputtering target for predetermined film-forming, and then the introduction amount of the voltage to be applied and the reactive gas are controlled to be shifted to the supplied power and the reactive state of the sputtering target for the desired film-forming while keeping the transition state.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种反应性溅射方法，其中在不在溅射靶周围沉积金属膜的情况下，在稳定的过渡状态下继续放电的条件下，以高生产率形成预定金属的化合物膜，并提供光学构件。解决方案：在反应溅射法中，将惰性气体和反应气体引入真空室中，以在真空室中的成膜基板上形成溅射靶的化合物膜和反应性气体。在施加电压的状态下开始放电，以便在要施加的功率低于施加到用于预定成膜的溅射靶的情况下获得转变状态，然后将电压的引入量并且反应气体被控制成转移到所需的成膜的溅射靶的供给功率和反应状态，同时保持过渡状态。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2013148844A Light absorber and imaging apparatus using the same 有权
标题翻译：光吸收和成像装置使用它
公开(公告)号：JP2013148844A
公开(公告)日：2013-08-01
申请号：JP2012011408
申请日：2012-01-23
申请人： Asahi Glass Co Ltd , 旭硝子株式会社
发明人： MASHITA NAOHIRO
IPC分类号： G02B5/22 , G02B1/11 , G02B1/115 , G02B5/00 , G02B5/28 , G03B11/00
摘要： PROBLEM TO BE SOLVED: To provide an absorber that is satisfactory in light shield performance and includes a light shielding film of a low light reflectance, and provide an imaging apparatus that has such a light absorber.SOLUTION: A light absorber 100 comprises a base 10 and a light shielding film 20 provided on at least one surface of the base 10 and configured to shield against light made incident on the base 10. The light shielding film 20 comprises a low-refraction-index layer 23 of a refraction index of 1.7 or less, which is provided via a first light absorption layer 21 with an extinction coefficient of 2.5 or greater and a second light absorption layer 22 with a refraction index of 1.4 to 3.0 and an extinction coefficient of 0.4 to 1.0, provided on a face of the first light absorption layer 21, which is opposite to the base 10.
摘要翻译：要解决的问题：提供一种遮光性能令人满意的吸收体，并且包括具有低光反射率的遮光膜，并提供具有这种光吸收剂的成像装置。解决方案：光吸收体100包括基底10 以及遮光膜20，其设置在基座10的至少一个表面上并被构造成遮挡入射在基座10上的光。遮光膜20包括折射率为1.7的低折射率层23或较少，其通过具有2.5或更大的消光系数的第一光吸收层21和具有1.4至3.0的折射率和0.4至1.0的消光系数的第二光吸收层22提供，其设置在第一光吸收层21，其与基部10相对。

4. 发明专利

JP2013012273A Reflection type wideband wavelength plate and optical head device 审中-公开
标题翻译：反射型宽带波长光栅和光头设备
公开(公告)号：JP2013012273A
公开(公告)日：2013-01-17
申请号：JP2011144521
申请日：2011-06-29
申请人： Asahi Glass Co Ltd , 旭硝子株式会社
发明人： ISOBE MAMORU , NOMURA TAKUJI , MASHITA NAOHIRO
IPC分类号： G11B7/135 , G02B5/30
摘要： PROBLEM TO BE SOLVED: To provide a reflection type wideband wavelength plate which performs functions as a reflection plate and a quarter wave plate to a plurality of different wavelengths, and reduces manufacturing man-hour and manufacturing costs.SOLUTION: A reflection type wideband wavelength plate of the present invention performs deflection reflection of an optical path and gives phase difference to a plurality of incident beams with linear polarization having different wavelengths to be emitted, in which an antireflection layer, a single organic birefringent medium layer, and a reflection layer are sequentially laminated, viewed from the incident side, an optical axis of the organic birefringent medium layer is continuously twisted along the thickness direction in the organic birefringent medium layer.
摘要翻译：要解决的问题：提供一种反射型宽带波长板，其执行作为反射板和四分之一波片的功能到多个不同的波长，并且降低了制造工时和制造成本。解决方案：本发明的反射型宽带波长板进行光路的偏转反射，并向具有不同波长的线偏振的多个入射光束发出相位差，其中防反射层，单个有机双折射介质层和反射层从入射侧依次层叠，有机双折射介质层的光轴在有机双折射介质层中沿厚度方向连续地扭曲。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2003027226A Sputtering system and sputtering deposition method 有权
标题翻译：溅射系统和溅射沉积方法
公开(公告)号：JP2003027226A
公开(公告)日：2003-01-29
申请号：JP2001220943
申请日：2001-07-23
申请人： Asahi Glass Co Ltd , 旭硝子株式会社
发明人： MASHITA NAOHIRO , SHIDOUJI EIJI
IPC分类号： G02B5/28 , C23C14/34
摘要： PROBLEM TO BE SOLVED: To provide a structure of a target which is capable of achieving the uniformity of a film thickness distribution in the progressing direction of a rotating substrate with a carousel-type sputtering system. SOLUTION: A target surface of this target has a prescribed angle of inclination in such a manner that the target surface facing the substrate attached to a substrate holder does not parallel to the substrate surface when the target attains a positional relation to face the substrate. The angle of inclination is designed at the optimum angle according to the constitution conditions of the sputtering system. There is an embodiment to form the target surface to a single slope, (i.e., a wedge shape) inclining in one direction in addition to an embodiment to form the target surface to an A shape, (i.e., a roof shape).
摘要翻译：要解决的问题：提供能够通过旋转式溅射系统实现旋转基板的前进方向上的膜厚分布的均匀性的目标结构。解决方案：该目标物的目标表面具有规定的倾斜角度，使得当目标物达到与基板相对的位置关系时，面向附着于基板支架的基板的目标表面不平行于基板表面。根据溅射系统的结构条件，将倾斜角设计在最佳角度。除了将实施例形成目标表面（即，屋顶形状）之外，还有一个实施例将目标表面形成为单个斜面（即，楔形），其在一个方向上倾斜。

6. 发明专利

JP2010024532A Magnetron sputtering apparatus, film-forming method, and method for manufacturing optical component 审中-公开
标题翻译：磁控溅射装置，成膜方法和制造光学部件的方法
公开(公告)号：JP2010024532A
公开(公告)日：2010-02-04
申请号：JP2008190873
申请日：2008-07-24
申请人： Asahi Glass Co Ltd , 旭硝子株式会社
发明人： MASHITA NAOHIRO , SHIDOJI EIJI
IPC分类号： C23C14/35
摘要： PROBLEM TO BE SOLVED: To produce a film having few defects with high productivity, by inhibiting occurrence of arcing and reducing cleaning frequency.
SOLUTION: A magnetron sputtering apparatus has a correction magnetic circuit (32) provided in the inner part of an anode portion (30) or in the vicinity thereof, and forms a magnetic field in which a part of magnetic lines of force, which penetrate a target (18), detours around a deposition shield (27) and penetrates a part of the anode portion (30). The deposition shield (27) has the surface (27A) of a film-forming side, which forms an angle of 10 degrees or smaller against a direction (48) of a normal line at a point that is closer to the penetration position of the magnetic field that penetrates a part of the anode in the normal line direction than points of which the magnetic lines of force of the single correction magnetic circuit (32) become most closely parallel with the normal line of the surface of the anode portion (30).
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：通过抑制电弧的发生和降低清洗频率，以高生产率制造缺陷少的膜。解决方案：磁控管溅射装置具有设置在阳极部分（30）的内部或其附近的校正磁路（32），并形成磁场的一部分磁力线，穿透靶（18），围绕沉积屏蔽（27）绕过并穿透阳极部分（30）的一部分。沉积屏蔽（27）具有成膜侧的表面（27A），其在更接近于穿透位置的点处相对于法线的方向（48）形成10度或更小的角度所述磁场穿过所述阳极的一部分，所述磁场沿着所述单个校正磁路（32）的力线与所述阳极部（30）的所述表面的法线最接近平行的点沿法线方向进行，。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2009249677A Magnetron sputtering apparatus, film-forming method, and method for manufacturing optical component 审中-公开
标题翻译：磁控溅射装置，成膜方法和制造光学部件的方法
公开(公告)号：JP2009249677A
公开(公告)日：2009-10-29
申请号：JP2008098169
申请日：2008-04-04
申请人： Asahi Glass Co Ltd , 旭硝子株式会社
发明人： MASHITA NAOHIRO , SHIDOJI EIJI
IPC分类号： C23C14/35 , C23C14/06 , G02B5/28
摘要： PROBLEM TO BE SOLVED: To produce a film having few defects with high productivity, by inhibiting the occurrence of arcing and reducing cleaning frequency.
SOLUTION: This magnetron sputtering apparatus has a correction magnetic circuit (32) provided in the inner part of an anode portion (30) or in the vicinity thereof, and forms a magnetic field in which a part of magnetic lines of force, which penetrate a target (18), detours around a deposition shield (27) and penetrates a part of the anode portion (30). The deposition shield (27) has the surface (27A) of a film-forming side, which forms an angle of 10 degrees or smaller against a direction (48) of a normal line at a point that is closer to a penetration position of the magnetic field that penetrates a part of the anode in the normal line direction than points of which the magnetic lines of force of the single correction magnetic circuit (32) become most closely parallel with the normal line of the surface of the anode portion (30).
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：通过抑制电弧的发生和降低清洗频率，以高生产率制造缺陷少的膜。解决方案：该磁控溅射装置具有设置在阳极部（30）的内部或其附近的校正磁路（32），形成磁场的一部分磁力线，穿透靶（18），围绕沉积屏蔽（27）绕过并穿透阳极部分（30）的一部分。沉积屏蔽（27）具有成膜侧的表面（27A），在更接近于穿透位置的点处，相对于法线的方向（48）形成10度或更小的角度所述磁场穿过所述阳极的一部分，所述磁场沿着所述单个校正磁路（32）的力线与所述阳极部（30）的所述表面的法线最接近平行的点沿法线方向进行，。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2006265739A Sputtering system and sputtering deposition method 有权
标题翻译：溅射系统和溅射沉积方法
公开(公告)号：JP2006265739A
公开(公告)日：2006-10-05
申请号：JP2006175623
申请日：2006-06-26
申请人： Asahi Glass Co Ltd , 旭硝子株式会社
发明人： MASHITA NAOHIRO , SHIDOUJI EIJI
IPC分类号： C23C14/34 , C23C14/40 , G02B5/28
摘要： PROBLEM TO BE SOLVED: To provide a sputtering system and sputtering deposition method in which a film thickness can be controlled with high accuracy and productivity is excellent. SOLUTION: In the carousel-type sputtering system installed with a substrate holder 14 within a chamber 12, ordinary magnetrons 23, 33 and AC magnetrons 27, 37 are each annexed for formation of low-refractive index films and formation of high-refractive index films. The films are formed by the AC magnetrons up to 90% of the design film thickness (target film thickness). Thereafter, the films are formed only by the ordinary magnetrons. The transmittance of a substrate 18 is measured during the deposition and film thickness control is performed by feeding back the information to a power source. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供可以高精度地控制膜厚度并且生产率优异的溅射系统和溅射沉积方法。解决方案：在室12内安装有衬底保持器14的圆盘传送带型溅射系统中，分别附有普通磁控管23,33和AC磁控管27,37以形成低折射率膜并形成高折射率膜，折射率膜。这些膜由AC磁控管形成，高达设计膜厚度（目标膜厚度）的90％。此后，膜仅由普通磁控管形成。在沉积期间测量基板18的透射率，并通过将信息反馈到电源来执行膜厚度控制。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2009007600A Method for controlling reactive sputtering and film deposition method 有权
标题翻译：用于控制反应溅射和膜沉积方法的方法
公开(公告)号：JP2009007600A
公开(公告)日：2009-01-15
申请号：JP2007167879
申请日：2007-06-26
申请人： Agc Techno Glass Co Ltd , Agcテクノグラス株式会社 , Asahi Glass Co Ltd , 旭硝子株式会社
发明人： TATEMURA MITSUYUKI , MASHITA NAOHIRO
IPC分类号： C23C14/34 , C23C14/54 , G02B5/26 , G02B5/28
摘要： PROBLEM TO BE SOLVED: To provide: a method for controlling reactive sputtering, by which all of each state of compound, transition and metal can seamlessly and stably controlled; and a film deposition method using reactive sputtering, by which film deposition can be stably performed at a high speed in a transition state without failure of film forming.
SOLUTION: The method for controlling reactive sputtering comprises detecting the intensity of a light having a specified wavelength emitted from a plasma, that is changed according to the sputtering state, and then controlling the introduction amount of a reactive gas so that the detected intensity of the light becomes a predetermined value. In the method, the introduction amount of the reactive gas is controlled by first PID control so that the intensity of the light having the specified wavelength emitted from the plasma coincides with a target value, and the introduction amount of the reactive gas is controlled by second PID control so that the difference between the variation of the intensity of the light, expected by the first PID control, and the variation of the intensity of the light practically generated becomes small, and further, final control of the introduction amount of the reactive gas is performed by the total control output value of the obtained first PID control output value and second PID control output value.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供：控制反应溅射的方法，通过其可以无缝且稳定地控制化合物，过渡金属和金属的各种状态; 以及使用反应溅射的成膜方法，通过该方法可以在转变状态下以高速稳定地进行成膜，而不会导致成膜失败。解决方案：用于控制反应溅射的方法包括检测从等离子体发射的特定波长的光的强度，其根据溅射状态而改变，然后控制反应气体的引入量，使得检测到光的强度变为预定值。在该方法中，通过第一PID控制来控制反应气体的引入量，使得从等离子体发射的具有特定波长的光的强度与目标值一致，并且反应气体的引入量由第二 PID控制，使得由第一PID控制预期的光的强度变化与实际产生的光的强度的变化之间的差异变小，此外，反应气体的引入量的最终控制由所获得的第一PID控制输出值和第二PID控制输出值的总控制输出值进行。版权所有（C）2009，JPO＆INPIT

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