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1. 发明专利

JPS6184376A Vapor growth device 失效
标题翻译：蒸气生长装置
公开(公告)号：JPS6184376A
公开(公告)日：1986-04-28
申请号：JP20497584
申请日：1984-09-28
申请人： Applied Material Japan Kk
发明人： MAEDA KAZUO , TOKUMASU TOKU , FUKUYAMA TOSHIHIKO
IPC分类号： C23C16/44 , B05D3/06 , B05D7/24 , C23C16/442 , C23C16/455 , C23C16/48 , C30B25/10 , C30B25/14
CPC分类号： C23C16/45504 , B05D1/60 , B05D3/061 , C23C16/455 , C23C16/482 , C23C16/487 , C23C16/488 , C30B25/105 , C30B25/14
摘要： PURPOSE:To provide a titled device which permits the thorough discharge of the resulted product of reaction in a vapor phase to the outside of the system by the constitution in which the reactive gas heated to about the surface temp. of a material to be treated and an inert gas covering the outside thereof are passed along the surface of said material to be irradiated with UV rays. CONSTITUTION:The reactive gas is passed along the surface of a wafer 22 kept at a prescribed temp. on a hot plate 20 in the direction parallel therewith and is discharged from a discharge pipe 36 in a vapor growth device which grows a film on the wafer 22 surface by passing the reactive gas on the surface of the wafer 22 and irradiating the UV rays from an UV ray irradiating lamp 50. Gaseous N2 is passed by a gaseous N2 supply nozzle 38 and is discharged from a discharge pipe 44 to form an inert gaseous curtain to cover the outside of the above-mentioned reactive gaseous flow. Both reactive gas and gaseous N2 are preliminarily heated to the temp. approximately equal to the temp. of the wafer 22 by heating coils 34, 42. The resulted product of reaction in the vapor phase is thus discharged together with the gaseous flow and the generation of particles is thoroughly prevented.
摘要翻译：目的：提供一种标题装置，其允许通过加热到大约表面温度的反应气体的结构将导致的气相反应产物彻底排放到系统外部。的待处理材料和覆盖其外部的惰性气体沿着所述材料的表面通过以照射紫外线。构成：反应气体沿保持在规定温度的晶片22的表面通过。在热板20上沿着平行的方向从排出管36排出，该气相生长装置通过使反应性气体通过晶片22的表面而使晶片22表面上的膜生长并照射紫外线紫外线照射灯50.气态N 2通过气态N 2供应喷嘴38，并从排出管44排出以形成惰性气体幕以覆盖上述反应性气流的外部。反应气体和气态N 2均预先加热至温度。大约等于温度通过加热线圈34,42而导致的晶片22的产生。因此，气相中的反应产物随气流一起被排出，从而彻底地防止了颗粒的产生。

2. 发明专利

JPS61103538A Vapor growth method 失效
标题翻译：蒸气生长法
公开(公告)号：JPS61103538A
公开(公告)日：1986-05-22
申请号：JP22623184
申请日：1984-10-26
申请人： Applied Material Japan Kk
发明人： MAEDA KAZUO , TOKUMASU TOKU , FUKUYAMA TOSHIHIKO
IPC分类号： C23C16/22 , B01J19/12 , C23C16/30 , C23C16/34 , C23C16/40 , C23C16/48 , C30B25/02
CPC分类号： C23C16/308 , C23C16/345 , C23C16/401 , C23C16/402 , C23C16/482 , C30B25/02
摘要： PURPOSE:To enable reaction to be caused at = one kind of specified reaction gas into a reaction vessel and irradiating the surface of a material to be treated in the reaction vessel with ultraviolet rays while maintaining the reaction temp. at
摘要翻译：目的：通过引入inorg在<= 500摄氏度下引起反应。硅烷和> =一种指定的反应气体进入反应容器，并在保持反应温度的同时用紫外线照射反应容器中待处理材料的表面。在<= 500℃。宪法：一个inorg。硅烷和NO 2，N 2 O，NO，CO 2，CO和NH 3中的至少一种反应气体被引入反应容器中。反应温度保持在<= 500℃，反应气体被光激发，通过用形成SiO 2膜，Si 3 N 4膜或SixOzNz膜的紫外线照射放置在反应容器中的材料的表面而引起反应，待处理的材料。此外，将水14放置在反应容器10中的基座12上，并且基座12被加热器16加热，在基座12的表面达到反应温度。的反应气体。用于产生紫外线的汞灯18被提供到水14的表面。

3. 发明专利

JPS61103539A Vapor growth method 失效
标题翻译：蒸气生长法
公开(公告)号：JPS61103539A
公开(公告)日：1986-05-22
申请号：JP22623284
申请日：1984-10-26
申请人： Applied Material Japan Kk
发明人： MAEDA KAZUO , TOKUMASU TOKU , FUKUYAMA TOSHIHIKO
IPC分类号： C23C16/22 , B01J19/12 , C23C16/30 , C23C16/34 , C23C16/40 , C23C16/48 , C30B25/02
CPC分类号： C23C16/401 , C23C16/308 , C23C16/345 , C23C16/402 , C23C16/482 , C30B25/02
摘要： PURPOSE:To enable reaction at =one kind of reaction gas into a reaction vessel and irradiating the surface of a material to be treated in the reaction vessel with ultraviolet rays while maintaining the reaction temp. at
摘要翻译：目的：通过引入组织使<= 500摄氏度反应。硅烷和> =一种反应气体进入反应容器，并在保持反应温度的同时用紫外线照射反应容器中待处理材料的表面。在<= 500℃。构成：组织硅烷与N2O，NO2，NO，CO2，CO和NH3中的至少一种反应气体一起引入反应容器10。然后，反应温度保持在<= 500℃，并将待处理材料14的表面放置在反应容器10中，用紫外线照射激发反应气体以引起反应，并将SiO 2膜，Si 3 N 4膜或SixOyNz 在待处理材料14的表面上形成膜。例如，将晶片14放置在反应容器10中的基座12上，并且用加热器16加热基座，使得基座12的表面达到反应温度。的反应气体。紫外线从Hg灯18产生，以照射晶片14的表面。

4. 发明专利

JPS6177695A Vapor growth method 失效
标题翻译：蒸气生长法
公开(公告)号：JPS6177695A
公开(公告)日：1986-04-21
申请号：JP19710084
申请日：1984-09-20
申请人： Applied Material Japan Kk
发明人： MAEDA KAZUO , TOKUMASU TOKU , FUKUYAMA TOSHIHIKO
IPC分类号： C23C16/34 , C23C16/40 , C30B25/02 , H01L21/205
CPC分类号： C23C16/402 , C23C16/345 , C23C16/401 , C30B25/02
摘要： PURPOSE:To prepare a protecting film contg. less particles and pinholes and having a uniform thickness thus being useful for protecting a device by allowing an organosilane to react with gaseous ozone at low temp. and forming a film on a device to be protected by a vapor growth method. CONSTITUTION:An organosilane is allowed to react with gaseous ozone at
摘要翻译：目的：制备保护膜较少的颗粒和针孔并且具有均匀的厚度，因此通过允许有机硅烷在低温下与气态臭氧反应来保护装置是有用的。并在通过气相生长法保护的装置上形成膜。构成：允许有机硅烷在<= 500℃下与气态臭氧反应，以在待处理物体的表面上形成膜。在图中给出了使用无声放电的臭氧发生器10的示例。通过臭氧发生器10将O 2的一部分转化为O 3，并且将臭氧化的氧气通过流量控制阀12引入反应容器14中。石英鼓泡器16中所含的有机硅烷被用作载气的气态N 2蒸发，并引入反应容器14通过流量控制阀18,22是用于将反应容器14的内部加热至反应温度的加热器。即约 400摄氏度在晶片30上形成膜并生长。

5. 发明专利

JPS61240647A MANUFACTURING EQUIPMENT FOR SEMICONDUCTOR 失效
公开(公告)号：JPS61240647A
公开(公告)日：1986-10-25
申请号：JP8333185
申请日：1985-04-17
申请人： APPLIED MATERIAL JAPAN KK
发明人： TOKUMASU TOKU , MATSUI FUMIYA , FUKUYAMA TOSHIHIKO
IPC分类号： B65G54/02 , C23C16/44 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/67 , H01L21/677 , H01L21/68
摘要： PURPOSE:To enable to accurately control temperature without frictional heat and to obtain a thin film of desired uniform thickness without particle by levitating a carrier for placing and conveying substrates by a magnetic force acting externally of a vacuum chamber. CONSTITUTION:Carriers 46 which place substrates 48 to be treated are aligned in the prescribed number on the support 56 of a conveyor 54 so that the carriers 46 are disposed in the first preliminary vacuum chamber 14. At this time, a permanent magnet 50 is followed to the movement of the carriers 46 to be moved so as not to be affected by the magnet 50. In the meantime, the preceding substrate 48 is vapor-phase grown in a vacuum chamber 12, and the substrate which has already been grown in the second preliminary vacuum chamber 16 is sequentially fed by a conveyor 58. A conveying mechanism for conveying by levitating by a magnetic force is employed as a noncontact type without slide, thereby accurately controlling the temperature without frictional heat.

6. 发明专利

JPS6179771A Method and device for vapor growth 失效
标题翻译：用于蒸气生长的方法和装置
公开(公告)号：JPS6179771A
公开(公告)日：1986-04-23
申请号：JP20123084
申请日：1984-09-26
申请人： Applied Material Japan Kk
发明人： MAEDA KAZUO , TOKUMASU TOKU , FUKUYAMA TOSHIHIKO , HIRATA TSUGUAKI
IPC分类号： C23C16/44 , B05D3/06 , B05D7/24 , C23C16/442 , C23C16/455 , C23C16/46 , C23C16/48 , C30B25/10 , C30B25/14
CPC分类号： C23C16/45504 , B05D1/60 , B05D3/061 , C23C16/455 , C23C16/482 , C23C16/487 , C23C16/488 , C30B25/105 , C30B25/14
摘要： PURPOSE:To prevent generation of particles on the film formed on a surface of a substrate by running parallel a reactive gas on the surface of a substrate and running gaseous N2 of the same temp. in parallel with the reactive gas in the upper part of the reactive gas flow in a vapor reaction device. CONSTITUTION:A wafer 22 is imposed on a hot plate 20 and is heated up to a reaction temp. The SiH4-O2 or SiH4-PH3-O2 reactive gas is preliminarily heated up to about the reaction temp. by a heating coil 34 in a gas supply pipe 32 and is ejected from the many small holes 28 of a reactive gas supply nozzle 24 provided in the upper part thereof so as to flow in a belt shape along the surface of the wafer 22, thereby forming an SiO2 film or PSG film on the wafer 22 surface. The preheated gaseous N2 is ejected from a nozzle 28 above the reactive gas flow so as to flow in parallel with the reactive gas. The resultant product of reaction formed in the reactive gas is drifted by the parallel gaseous flow without falling onto the wafer 22 and without generating particles. A reaction chamber is not always required as there is the gaseous N2 and the vapor reaction device is simplified.
摘要翻译：目的：为了防止在衬底表面上形成的膜上产生颗粒，该反应气体平行于衬底表面并运行相同温度的气态N 2。与蒸汽反应装置中的反应气体流的上部中的反应气体平行。构成：将晶片22施加在热板20上并加热至反应温度。将SiH4-O2或SiH4-PH3-O2反应气体预先加热至约反应温度。通过气体供给管32中的加热线圈34，从设置在其上部的反应性气体供给喷嘴24的许多小孔28喷出，沿着晶片22的表面沿带状流动，在晶片22表面上形成SiO 2膜或PSG膜。预热的气态N 2从反应气流上方的喷嘴28喷出，以与反应气体平行流动。在反应气体中形成的反应产生的产物通过平行的气流漂移而不会落在晶片22上而不产生颗粒。由于有气态N 2并且蒸气反应装置被简化，反应室并不总是需要的。

7. 发明专利

JPS6176677A Vapor growth method 失效
标题翻译：蒸气生长法
公开(公告)号：JPS6176677A
公开(公告)日：1986-04-19
申请号：JP20024484
申请日：1984-09-25
申请人： Applied Material Japan Kk
发明人： MAEDA KAZUO , TOKUMASU TOKU , FUKUYAMA TOSHIHIKO
IPC分类号： C23C16/30 , C23C16/34 , C23C16/40 , C23C16/48 , C30B25/02
CPC分类号： C23C16/482 , C23C16/308 , C23C16/345 , C23C16/401 , C23C16/402 , C30B25/02
摘要： PURPOSE:To form a dense film having a uniform thickness at a low temp. by irradiating UV rays to an orgl. silane-O2 reactive gas and growing selectively the film on the surface of a material to be treated through the pattern of a mask. CONSTITUTION:Gaseous N2 is introduced into the org. silane in a quartz bubble 10 and is evaporated. The gas is introduced through a flow rate control valve 12 into a reaction vessel 14. The gaseous N2 is introduced into the org. phosphorus in a quartz bubbler 16 and is evaporated. The gas is introduced through a flow rate control valve 18 into the vessel 14. The gaseous O2 is introduced through a flow rate control valve 20 into the vessel 14. The UV rays are irradiated on the surface of a water 26 by an Hg lamp 22 in the vessel 14 to convert part of the gaseous O2 to O3, by which the org. silane is oxidized at
摘要翻译：目的：在低温下形成厚度均匀的致密膜。通过向orgl辐射紫外线。硅烷-O 2反应性气体，并通过掩模的图案选择性地生长待处理材料表面上的膜。构成：气体N2被引入组织。硅烷在石英气泡10中并蒸发。气体通过流量控制阀12引入反应容器14中。将气态N 2引入组织。磷在石英起泡器16中蒸发。气体通过流量控制阀18引入到容器14中。气体O 2通过流量控制阀20引入容器14中。紫外线通过汞灯22照射在水26的表面上在容器14中将部分气态O 2转化成O 3，由此组织。硅烷在<= 500℃反应温度下氧化。当掩模30以稍微的间隔分开设置在晶片26的表面上时，在晶片26上选择性地生长符合掩模30的图案的膜。

8. 发明专利

JPS6169136A Semiconductor manufacturing device 失效
标题翻译：半导体制造设备
公开(公告)号：JPS6169136A
公开(公告)日：1986-04-09
申请号：JP19100084
申请日：1984-09-12
申请人： Applied Material Japan Kk
发明人： MAEDA KAZUO , FUKUYAMA TOSHIHIKO , HIRATA TSUGUAKI
IPC分类号： H01L21/205 , H01L21/31
CPC分类号： H01L21/31
摘要： PURPOSE:To perform the feed and taking-out of wafers by one unit of robot unit, to simplify the structure of a semiconductor manufacturing device, and at the same time, to contrive the space saving of the clean room by a method wherein the conveying path for the susceptors, whereon the wafers are mounted, is formed in an endless conveying path. CONSTITUTION:In the casing 22 of a semiconductor manufacturing device 20, part of a conveying path 28 consisting of a chain, which is circulatingly driven in the horizontal plane, is facing in the interior of a clean region 26 from the opening part 32 of a partition wall 30, by which the casing 22 and the clean region 26 are partitioned. Susceptors 34 are erected on the chain of the conveying path 28 plural sheets by plural sheets at constant intervals and the susceptors 34 are made to circulatingly shift by the conveying path 28. Wafers 36 are held on the outer surfaces of the susceptors 34. The feeding position and taking-out position of the wafers 36 can be disposed in close contact to each other and the feed and taking-out of the wafers can be performed by one unit of robot unit 38 in one clean region 26.
摘要翻译：目的：为了简化半导体制造装置的结构，为了简化半导体制造装置的结构，通过一个机器人单元执行晶片的进给和取出，同时通过以下方法来实现洁净室的节省空间：输送在其中安装晶片的基座的路径形成在环形输送路径中。构成：在半导体制造装置20的壳体22中，由在水平面上循环驱动的链条构成的输送路径28的一部分在与清洁区域26的开口部32相对的清洁区域26的内部分隔壁30由壳体22和清洁区域26分隔开。传感器34以恒定的间隔竖立在输送路径28的链条上，并且使基座34由输送路径28循环移动。晶片36被保持在基座34的外表面上。进给晶片36的位置和取出位置可以彼此紧密接触地布置，并且晶片的馈送和取出可以由一个单元的机器人单元38在一个清洁区域26中执行。

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