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1. 发明专利

JP2006216823A Semiconductor device, its manufacturing method and electronic device 有权
标题翻译：半导体器件及其制造方法和电子器件
公开(公告)号：JP2006216823A
公开(公告)日：2006-08-17
申请号：JP2005028812
申请日：2005-02-04
申请人： Akita Denshi Systems:Kk , Akita Semiconductor:Kk , 株式会社アキタセミコンダクタ , 株式会社アキタ電子システムズ
发明人： SATO NOBUE , SAGA TORU , TAKESHIMA HIDEHIRO , INAGAWA SUSUMU , WATANABE FUMITOMO
IPC分类号： H01L23/12
CPC分类号： H01L24/97 , H01L2224/48091 , H01L2924/07802 , H01L2924/15787 , H01L2924/181 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To miniaturize and thin a semiconductor device and improve mounting performance. SOLUTION: The semiconductor device has a semiconductor chip with an electrode in a first surface, a first part consisting of an insulating plate, and a second part which is extended from the first part and is thinner than the first part. The first surfaces of the first part and the second part are positioned on the same plane, and the first surface is bonded to the first surface of the semiconductor chip aside an arrangement position of an electrode via an insulating adhesive. The second surfaces of the first part and the second part, which are opposite surfaces of the first surface have a plurality of conductor layers, respectively. The prescribed conductor layer of the first part and the prescribed conductor layer of the second part have a wiring block formed of a structure to be electrically connected via a conductor provided to an inside; a conductive wire connecting the prescribed conductor layer of the second part of a wiring block and a prescribed electrode of the semiconductor chip; and an insulating sealing body covering the first surface of the semiconductor chip, the second part of the wiring block, and the wire. The surface of the sealing body is lower than the second surface of the first part of the wiring block by a prescribed height. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了使半导体器件小型化和薄型化，提高安装性能。解决方案：半导体器件具有在第一表面中具有电极的半导体芯片，由绝缘板构成的第一部分和从第一部分延伸并且比第一部分更薄的第二部分。第一部分和第二部分的第一表面位于相同的平面上，并且第一表面通过绝缘粘合剂结合到半导体芯片的第一表面，而不是电极的布置位置。第一部分和第二部分的与第一表面相对的表面的第二表面分别具有多个导体层。第一部分的规定导体层和第二部分的规定导体层具有由通过设置在内部的导体电连接的结构形成的布线块; 连接布线块的第二部分的规定导体层和半导体芯片的规定电极的导线; 以及覆盖半导体芯片的第一表面，布线块的第二部分和导线的绝缘密封体。密封体的表面比布线块的第一部分的第二表面低规定的高度。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2007048994A Semiconductor device and its manufacturing method 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2007048994A
公开(公告)日：2007-02-22
申请号：JP2005232834
申请日：2005-08-11
申请人： Akita Denshi Systems:Kk , 株式会社アキタ電子システムズ
发明人： SAGA TORU , WATANABE FUMITOMO
IPC分类号： H01L23/50 , G01P15/08 , H01L29/84
CPC分类号： H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide an inexpensive semiconductor acceleration sensor of high quality.
SOLUTION: The semiconductor device 1 has: a semiconductor chip 6 positioned inside a sealer 2; a tab 5 fixing a chip 6; a tab hanging lead 4 of which outer end is exposed in an outer circumferential surface of the sealer 2; a plurality of leads 3 disposed around the chip 6 and exposed in a lower surface of the sealer 2; and a wire connecting an electrode of the chip 6 and the lead 3. The chip 6 has a portion (an acceleration sensor part) improper for contact and a plurality of electrodes provided to a position apart from the portion improper for contact on its upper surface. A fixing surface of the chip 6 of the tab 5 is provided with a recess 12 facing the portion having a dislike of contact. The tab 5 is bonded to an upper surface of the chip 6 off a plurality of electrodes via an adhesive, and the portion of the chip 6 improper for contact is positioned inside the recess 12 and does not come into direct contact with the tab 5. The semiconductor device 1 is manufactured by using a metallic lead frame with the tab 5, the tab hanging lead 4 and the lead 3, thus reducing a cost.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供高品质的便宜的半导体加速度传感器。解决方案：半导体器件1具有：位于密封器2内部的半导体芯片6; 固定芯片6的突片5; 外端在密封件2的外周面露出的突片悬挂引线4; 多个引线3设置在芯片6周围并暴露在密封器2的下表面中; 以及连接芯片6的电极和引线3的线。芯片6具有不适合接触的部分（加速度传感器部分）和设置在远离不适于在其上表面接触的部分的位置的多个电极。突片5的芯片6的固定面设置有面向不接触的部分的凹部12。突片5通过粘合剂从多个电极接合到芯片6的上表面，并且芯片6不适于接触的部分位于凹部12的内部，并且不与突片5直接接触。通过使用具有突片5，突片悬挂引线4和引线3的金属引线框架来制造半导体器件1，从而降低成本。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2006147921A Semiconductor device and its manufacturing method 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2006147921A
公开(公告)日：2006-06-08
申请号：JP2004337366
申请日：2004-11-22
申请人： Akita Denshi Systems:Kk , 株式会社アキタ電子システムズ
发明人： TAKESHIMA HIDEHIRO , SAGA TORU , WATANABE FUMITOMO
IPC分类号： H01L23/12
CPC分类号： H01L24/97 , H01L24/94 , H01L2224/16245 , H01L2224/48091 , H01L2224/48235 , H01L2224/85005 , H01L2224/97 , H01L2924/15151 , H01L2924/15159 , H01L2924/15311 , H01L2924/18165 , H01L2924/00014 , H01L2224/85
摘要： PROBLEM TO BE SOLVED: To provide a thin semiconductor device and its manufacturing method. SOLUTION: The semiconductor device has a semiconductor chip 2 having a plurality of electrodes on a first surface 2a, electrically independent electrode plates 5 connected to overlie on the respective electrodes for causing their first surfaces to face the first surface of the semiconductor chip, and an insulator 4 filling a gap between the electrode plates and a gap between the electrode plate and the semiconductor chip. The semiconductor chip, the insulator and the electrode plates form a hexahedron. The upper surface of the hexahedron is formed of the second surface 2b of the semiconductor chip. Respective side faces of the semiconductor chip are exposed on respective side faces of the hexahedron, and a second surface 5b opposite to the first surface of each electrode plate is exposed on a lower surface of the hexahedron. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供一种薄的半导体器件及其制造方法。解决方案：半导体器件具有在第一表面2a上具有多个电极的半导体芯片2，电独立的电极板5连接到覆盖在各个电极上，以使它们的第一表面面对半导体芯片的第一表面以及填充电极板之间的间隙和电极板与半导体芯片之间的间隙的绝缘体4。半导体芯片，绝缘体和电极板形成六面体。六面体的上表面由半导体芯片的第二表面2b形成。半导体芯片的各个侧面在六面体的相应侧面上露出，并且与六面体的下表面露出与每个电极板的第一表面相对的第二表面5b。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2004340730A Semiconductor device and manufacturing method thereof 审中-公开
公开(公告)号：JP2004340730A
公开(公告)日：2004-12-02
申请号：JP2003137248
申请日：2003-05-15
申请人： Akita Denshi Systems:Kk , Hitachi Ltd , 株式会社アキタ電子システムズ , 株式会社日立製作所
发明人： TAKASAKI HAJIME , WATANABE FUMITOMO
IPC分类号： G01P15/08 , H01L23/28 , H01L29/84
CPC分类号： H01L24/97 , H01L2224/16 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2924/10157 , H01L2924/14 , H01L2924/15174 , H01L2924/15311 , H01L2924/351 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To simplify and downsize a hollow structure which seals a three-dimensional structure formed on a semiconductor substrate, and prevent changes in characteristics due to heat stress or the like caused by difference in thermal expansion coefficients of the structure and a semiconductor chip. SOLUTION: In the semiconductor device in which a semiconductor chip made by forming a three-dimensional structure on a semiconductor substrate is sealed by a hollow structure, a convex part surrounding the three-dimensional structure is formed on the semiconductor substrate, and the hollow structure is formed using the projecting part and a lid part. The manufacturing method thereof comprises a process to form the projecting part surrounding the three-dimensional structure on the semiconductor substrate, and a process to adhere the lid part to the projecting part to form the hollow structure. This invention can reduce a space for the hollow structure because the hollow structure is formed by the projecting part and the lid part, and prevent stress due to thermal expansion because the projecting part is made from the same material as the semiconductor chip. COPYRIGHT: (C)2005,JPO&NCIPI

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